JP2010183021A5 - - Google Patents

Download PDF

Info

Publication number
JP2010183021A5
JP2010183021A5 JP2009027598A JP2009027598A JP2010183021A5 JP 2010183021 A5 JP2010183021 A5 JP 2010183021A5 JP 2009027598 A JP2009027598 A JP 2009027598A JP 2009027598 A JP2009027598 A JP 2009027598A JP 2010183021 A5 JP2010183021 A5 JP 2010183021A5
Authority
JP
Japan
Prior art keywords
divided
semiconductor device
mim capacitor
mim
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009027598A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010183021A (ja
JP5592074B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009027598A priority Critical patent/JP5592074B2/ja
Priority claimed from JP2009027598A external-priority patent/JP5592074B2/ja
Priority to US12/704,608 priority patent/US8525269B2/en
Publication of JP2010183021A publication Critical patent/JP2010183021A/ja
Publication of JP2010183021A5 publication Critical patent/JP2010183021A5/ja
Application granted granted Critical
Publication of JP5592074B2 publication Critical patent/JP5592074B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009027598A 2009-02-09 2009-02-09 半導体装置 Expired - Fee Related JP5592074B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009027598A JP5592074B2 (ja) 2009-02-09 2009-02-09 半導体装置
US12/704,608 US8525269B2 (en) 2009-02-09 2010-02-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009027598A JP5592074B2 (ja) 2009-02-09 2009-02-09 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014139422A Division JP5863892B2 (ja) 2014-07-07 2014-07-07 半導体装置

Publications (3)

Publication Number Publication Date
JP2010183021A JP2010183021A (ja) 2010-08-19
JP2010183021A5 true JP2010183021A5 (https=) 2012-03-22
JP5592074B2 JP5592074B2 (ja) 2014-09-17

Family

ID=42539719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009027598A Expired - Fee Related JP5592074B2 (ja) 2009-02-09 2009-02-09 半導体装置

Country Status (2)

Country Link
US (1) US8525269B2 (https=)
JP (1) JP5592074B2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5621357B2 (ja) * 2010-06-30 2014-11-12 富士通セミコンダクター株式会社 半導体装置
US10134729B2 (en) * 2013-09-27 2018-11-20 Taiwan Semiconductor Manufacturing Co., Ltd. Vertical noise reduction in 3D stacked semiconductor devices
US9524964B2 (en) * 2014-08-14 2016-12-20 Xilinx, Inc. Capacitor structure in an integrated circuit
JP6318975B2 (ja) * 2014-08-20 2018-05-09 株式会社デンソー 半導体装置
JP2017175146A (ja) * 2017-05-02 2017-09-28 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000241762A (ja) 1999-02-24 2000-09-08 Tokin Corp 光アイソレータ
JP3522144B2 (ja) 1999-02-25 2004-04-26 富士通株式会社 容量回路および半導体集積回路装置
JP4220484B2 (ja) * 2005-03-15 2009-02-04 日本バーブラウン株式会社 集積回路抵抗体アレイ
JP2007049309A (ja) 2005-08-08 2007-02-22 Nec Electronics Corp スイッチ回路
US7932993B2 (en) * 2006-09-16 2011-04-26 Wenhui Mei Divided sub-image array scanning and exposing system

Similar Documents

Publication Publication Date Title
JP2006309161A5 (https=)
JP2008182058A (ja) 半導体装置および半導体装置形成方法
JP2010183021A5 (https=)
US20160240547A1 (en) Semiconductor memory device
US9323295B2 (en) Touch panel
JPWO2021070366A5 (https=)
JP2008135675A5 (https=)
JP2016161486A (ja) 湿度センサ
JP7372931B2 (ja) 表示基板、表示装置及び表示基板の製造方法
JP5592074B2 (ja) 半導体装置
KR100887884B1 (ko) 반도체 소자
JP2017502496A5 (https=)
CN102629602A (zh) 半导体器件
JP2007073976A5 (https=)
JP2008211188A5 (https=)
JP2002148654A5 (https=)
CN103094277B (zh) 半导体装置
CN103311221A (zh) 整合被动元件的半导体装置
WO2017047415A1 (ja) 半導体装置
US8878203B2 (en) Switching circuit
JP5863892B2 (ja) 半導体装置
KR102166748B1 (ko) 퓨즈 어레이
JP2005101128A5 (https=)
CN104167416A (zh) 半导体装置和电子设备
KR20060128352A (ko) 액티브 영역의 면적을 감소시킨 반도체 메모리 장치