JP5591343B2 - オプトエレクトロニクス素子及び該オプトエレクトロニクス素子の製造方法 - Google Patents
オプトエレクトロニクス素子及び該オプトエレクトロニクス素子の製造方法 Download PDFInfo
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Description
このオプトエレクトロニクス素子の様々な実施形態は支持体を備えたオプトエレクトロニクス素子を有している。支持体上には半導体チップが設けられ、接続領域が備わっている。前記半導体チップの前記支持体とは反対側のチップ表面にはコンタクト領域が設けられている。支持体上の接続領域は半導体チップ上のコンタクト領域と支持なしの導電構造部を介して導電的に接続されている。
本発明による三次元構造に対し、有利にはオプトエレクトロニクス素子の三次元トポグラフィ上に積層されるドライレジストフィルムが用いられてもよい。このドライレジストフィルムはフォトレジストに比べてエッジ上で均等な厚みの良好なエッジカバーがなされる。フォトレジストは、フォトレジストが硬化する前に、スピンコーティングによりスパッタリングされたシードレイヤ上にフラットに被着された後で、半導体チップの縁部を超えて流れ出す。フォトレジストは、本発明の対象ではないが、二次元的構造部に良好にマッチする。続いてシードレイヤはフォトマスクを介して露光される。その後で潜在的画像の現像が行われる。その際にはフォトレジストの露光された領域が除去される。代替的にフォトリソグラフィ技法の方法ステップを、フォトレジストの露光領域が現像後も存在し続けるように実施してもよい。
ガルバニック強化によってカバーされないシードレイヤのエッチングによる除去。このステップは短絡を予防する。
2 電磁ビーム
3 支持体
4 表面
5 接続領域
6 接続層
7 半導体チップ
8 チップ表面
9 コンタクト面
10 コンタクト領域
11 側面
12 チップ厚み(Z方向)
13 導電性構造部
13f 構造部脚部
13k 構造部頭部
13e 構造部凹部
13s 構造部壁部
14 構造部厚み(Z方向)
15 ボリューム領域
16 マスキング物質
17 構造部幅(Y方向)
18 絶縁性介在層
X 長手方向
Y 横方向
Z XとYに対する垂直方向
Claims (16)
- 接続領域(5)と底面とカバー面とを有する支持体(3)と、
前記支持体(3)のカバー面上に被着された半導体チップ(7)と、
前記半導体チップ(7)の前記支持体(3)とは反対側のチップ表面(8)に被着されたコンタクト領域(10)とを備えた、オプトエレクトロニクス素子(1)を製造するための方法において、
前記半導体チップ(7)の、前記コンタクト領域(10)の、及び/又は前記接続領域(5)の、前記支持体(3)底面とは反対側の外表面上にマスキング物質(16)を被着するステップと、
前記コンタクト領域(10)と前記接続領域(5)に亘ってマスキング物質(16)を除去するステップと、
前記コンタクト領域(10)と前記接続領域(5)とが導電接続されるように前記コンタクト領域(10)と前記接続領域(5)の間に導電性構造部(13)を被着するステップと、
前記コンタクト領域(10)と前記接続領域(5)との間で導電性構造部(13)が自立支持形に形成され、
前記導電性構造部(13)の、前記半導体チップ(7)とは反対側にある構造部脚部(13f)が、前記接続領域(5)上に立体的な延在部を有し、及び/又は、前記導電性構造部(13)の前記半導体チップ(7)の側にある構造部頭部(13k)が、前記コンタクト領域(10)上に立体的な延在部を有し、
前記導電性構造部(13)は、その構造部脚部(13f)と構造部頭部(13k)との間が上方から見ても側方から見ても湾曲形態を有するように、
前記マスキング物質(16)を除去するステップとを有していることを特徴とする方法。 - 前記コンタクト領域(10)と前記接続領域(5)の間に導電性構造部(13)を被着するステップが、金属化層の平坦な被着によって行われる、請求項1記載の方法。
- 前記金属化層の平坦な被着は、スクリーン印刷技法、ジェット技法、ディスペンシング技法、又はスプレー技法によって行われ、前記導電性構造部(13)はコンタクト領域1(10)と接続領域(5)の間に形成される、請求項2記載の方法。
- 前記平坦に被着された金属化層は、前記コンタクト領域(10)と前記接続領域(5)との間に導電性構造部(13)が残留するように構造化される、請求項2記載の方法。
- 前記金属化層の構造化は、ドライレジストフィルムを用いたフォトリソグラフィ技法によるステップと、ガルバニック強化技法によるステップと、ドライレジストフィルムの除去ステップと、シードレイヤのエッチング除去ステップとを有している、請求項4記載の方法。
- 前記マスキング物質(16)として、以下の材料、フォトレジスト、ドライレジストフィルム、エポキシ、ポリイミド、アクリラート、ワックス、ノンスティックフィルム、ペースト、ジェルのうちの少なくとも1つを有している、請求項1から5いずれか1項記載の方法。
- 前記マスキング物質(16)は、真空ラミネーション技法、ディスペンシング技法、ジェット技法、スプレー技法、ステンシル印刷技法、モールディング技法、スピンコーティング技法のうちの1つによってオプトエレクトロニクス素子(1)上に被着される、請求項1から6いずれか1項記載の方法。
- 前記マスキング物質(16)の除去は、ストリッピング、エッチング、又はプラズマアッシングによって行われる、請求項1から7いずれか1項記載の方法。
- 接続領域(5)を有する支持体(3)と、
前記支持体(3)上に被着された半導体チップ(7)と、
前記半導体チップ(7)の、前記支持体(3)とは反対側のチップ表面(8)に被着されたコンタクト領域(10)とを備えた、オプトエレクトロニクス素子(1)において、
前記接続領域(5)が前記コンタクト領域(10)と、自立支持形導電性構造部(13)を介して導電的に接続されており、
前記導電性構造部(13)の、前記半導体チップ(7)とは反対側にある構造部脚部(13f)が、前記接続領域(5)上に立体的な延在部を有し、及び/又は、前記導電性構造部(13)の前記半導体チップ(7)の側にある構造部頭部(13k)が、前記コンタクト領域(10)上に立体的な延在部を有し、
前記導電性構造部(13)は、その構造部脚部(13f)と構造部頭部(13k)との間が上方から見ても側方から見ても湾曲形態を有するように、
構成されていることを特徴とするオプトエレクトロニクス素子。 - 前記導電性構造部(13)は、金属又は金属性合金を有している、請求項9記載のオプトエレクトロニクス素子。
- 前記導電性構造部(13)は、その延在部全体に亘ってほぼ均質な構造部厚み(14)を有している、請求項9又は10記載のオプトエレクトロニクス素子。
- 前記導電性構造部(13)は、その延在部全体に亘ってほぼ均質な構造部幅(17)を有し、さらに前記導電性構造部(13)は、前記半導体チップ(7)の横方向(Y)で見た延在部全体に至るまで約20μmの規模の幅(17)を有している、請求項9から11いずれか1項記載のオプトエレクトロニクス素子。
- 前記半導体チップ(7)のチップ表面(8)上に、第2のコンタクト領域(10)が設けられており、前記第2のコンタクト領域は、第2の導電性構造部(13)を用いて、別の半導体チップ(7)のコンタクト領域(10)又は接続領域(5)と電気的に接続されている、請求項9から12いずれか1項記載のオプトエレクトロニクス素子。
- 前記導電性構造部(13)は、その構造部脚部(13f)と構造部頭部(13k)との間が上方から見ても側方から見てもS字形状を有するように構成されていることを特徴とする、請求項9から13いずれか1項記載のオプトエレクトロニクス素子。
- 前記コンタクト領域(10)における前記構造部頭部(13k)は、上方から見て楕円形、卵形、又は円形の凹部(13e)を有しており、前記凹部(13e)の側壁(13s)は、前記半導体チップ(7)のチップ表面(8)に対して傾斜している、請求項9から14いずれか1項記載のオプトエレクトロニクス素子。
- 前記導電性構造部(13)の前記構造部脚部(13f)は、前記接続領域(5)の、前記支持体(3)底面とは反対側の外表面全体を覆っており、及び/又は、前記導電性構造部(13)の前記構造部頭部(13k)は、前記コンタクト領域(10)の、前記支持体(3)底面とは反対側の外表面全体を覆っている、請求項9から15いずれか1項記載のオプトエレクトロニクス素子。
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DE102009051129A DE102009051129A1 (de) | 2009-10-28 | 2009-10-28 | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
PCT/EP2010/064800 WO2011051084A1 (de) | 2009-10-28 | 2010-10-05 | Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements |
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JP (1) | JP5591343B2 (ja) |
KR (1) | KR101744783B1 (ja) |
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GB201007066D0 (en) | 2010-04-28 | 2010-06-09 | Reckitt Benckiser Inc | Improved applicator for an adhesive lavatory treatment composition |
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DE102011055549A1 (de) | 2011-09-30 | 2013-04-04 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements mit einer drahtlosen Kontaktierung |
TW201409759A (zh) * | 2012-08-31 | 2014-03-01 | Lextar Electronics Corp | 發光二極體裝置與其製造方法 |
DE102012218457A1 (de) | 2012-10-10 | 2014-04-10 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement und verfahren zu seiner herstellung |
DE102013107862A1 (de) * | 2013-07-23 | 2015-01-29 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbares optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung zumindest eines oberflächenmontierbaren optoelektronischen Halbleiterbauteils |
DE102015107742A1 (de) | 2015-05-18 | 2016-11-24 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauteils und optoelektronisches Bauteil |
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CN111739849B (zh) * | 2020-08-06 | 2020-12-04 | 甬矽电子(宁波)股份有限公司 | 芯片封装结构、其制作方法和电子设备 |
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US9419193B2 (en) | 2016-08-16 |
CN102598327A (zh) | 2012-07-18 |
CN102598327B (zh) | 2016-10-19 |
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US20120223360A1 (en) | 2012-09-06 |
EP2494616A1 (en) | 2012-09-05 |
DE102009051129A1 (de) | 2011-06-01 |
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