JP5586651B2 - プラズマ窒化ゲート誘電層における窒素プロフィルを改善する方法 - Google Patents
プラズマ窒化ゲート誘電層における窒素プロフィルを改善する方法 Download PDFInfo
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- JP5586651B2 JP5586651B2 JP2012093839A JP2012093839A JP5586651B2 JP 5586651 B2 JP5586651 B2 JP 5586651B2 JP 2012093839 A JP2012093839 A JP 2012093839A JP 2012093839 A JP2012093839 A JP 2012093839A JP 5586651 B2 JP5586651 B2 JP 5586651B2
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims description 132
- 229910052757 nitrogen Inorganic materials 0.000 title claims description 64
- 238000000034 method Methods 0.000 title claims description 33
- 239000000758 substrate Substances 0.000 claims description 100
- 239000007789 gas Substances 0.000 claims description 59
- 238000012545 processing Methods 0.000 claims description 52
- 235000012431 wafers Nutrition 0.000 claims description 48
- 238000012546 transfer Methods 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 238000000137 annealing Methods 0.000 claims description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 238000005121 nitriding Methods 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 11
- 239000001257 hydrogen Substances 0.000 description 11
- 229910052739 hydrogen Inorganic materials 0.000 description 11
- 239000010453 quartz Substances 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 9
- -1 nitrogen ions Chemical class 0.000 description 7
- 238000011065 in-situ storage Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000014759 maintenance of location Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 230000006641 stabilisation Effects 0.000 description 5
- 238000011105 stabilization Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 230000007723 transport mechanism Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052805 deuterium Inorganic materials 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
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Description
[0002]本発明は、半導体処理に関し、より具体的には、プラズマ窒化ゲート誘電層における窒素プロファイルを改善する為の方法に関する。
[0003]トランジスタ製作に使用されるゲート誘電膜は、しばしば、窒素イオンで窒化され、それらの静電容量を増加させる。そのような膜内の窒素のフラクション(fraction)は、更なる処理の前に当該膜内に組み込まれた後、見失われる。全窒素含量は、処理遅れにおける違いのため、ウエハによって異なるおそれがあるので、異なるウエハのトランジスタは、著しく異なる静電容量を備えた誘電層を有する。
Claims (10)
- 基板を処理する方法において:
基板が、あるシステムの窒化用チャンバ内に置かれている間に、前記基板上に形成されたゲート誘電層に窒素(N)を導入するステップと;
前記システムから前記基板を外に搬送することなく、前記基板を前記システムのアニール用チャンバに搬送するステップと;
前記窒化用チャンバ内の前記基板の温度を超える800℃まで、60℃/秒より大きいランプ率で、前記アニール用チャンバ内で前記基板を加熱することにより、前記ゲート誘電層をアニールするステップと;を備え、前記アニールの間、前記アニール用チャンバ内の圧力は、100トルであり、前記基板を、前記窒素が導入された後、5分以内にアニールする、前記方法。 - 前記基板を、前記窒素が導入された後、2分以内にアニールする、請求項1記載の方法。
- 前記基板を、前記窒素が導入された後、1分以内にアニールする、請求項2記載の方法。
- 前記誘電層が晒されるガスは、少なくとも50容量%の窒素を含む、請求項1記載の方法。
- 前記アニール用チャンバは、前記誘電層がアニールされている間、少なくとも部分的に窒素ガスで充填される、請求項1記載の方法。
- 前記誘電層を窒素プラズマに晒すことにより、前記窒素が導入される、請求項1記載の方法。
- 前記誘電層は、二酸化珪素(SiO2)である、請求項1記載の方法。
- 基板を処理する方法において:
前記基板上に形成されたゲート誘電層に窒素(N)を導入するステップと;
前記窒素が導入されるときの前記基板の温度を超える800℃まで、60℃/秒より大きいランプ率で、前記基板を加熱することにより、前記窒素を導入した後、2分以内に前記ゲート誘電層をアニールするステップと;を備え、前記アニールの間、圧力は、100トルである、前記方法。 - 前記窒素が導入された後、1分以内に前記基板がアニールされる、請求項8記載の方法。
- 半導体ウエハを処理する為のシステムであって:
搬送チャンバと;
前記搬送チャンバ内のロボットと;
前記搬送チャンバに通じる窒化用チャンバと;
前記搬送チャンバに通じるアニール用チャンバと;
(i)前記ロボットでウエハを前記窒化用チャンバ内に搬送し、(ii)前記窒化用チャンバ内の各ウエハ上に形成された誘電層内に窒素を導入し、(iii)前記ロボットで各ウエハを前記窒化用チャンバから、前記搬送チャンバを介して、前記アニール用チャンバに搬送し、(iv)前記窒素が導入されるときの前記基板の温度を超える800℃まで、60℃/秒より大きいランプ率で、前記基板を加熱することにより、前記窒素が前記誘電層内に導入された後5分以内に前記アニール用チャンバ内で前記誘電層をアニールし、(v)前記アニールの間、100トルに前記アニール用チャンバ内の圧力を維持するようにプログラムされた制御システムと;を備える、前記システム。
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