JP5584448B2 - 光導電素子及びこれを用いた撮像デバイス、並びに導電膜付き基板の製造方法 - Google Patents
光導電素子及びこれを用いた撮像デバイス、並びに導電膜付き基板の製造方法 Download PDFInfo
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- JP5584448B2 JP5584448B2 JP2009253515A JP2009253515A JP5584448B2 JP 5584448 B2 JP5584448 B2 JP 5584448B2 JP 2009253515 A JP2009253515 A JP 2009253515A JP 2009253515 A JP2009253515 A JP 2009253515A JP 5584448 B2 JP5584448 B2 JP 5584448B2
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- 239000000758 substrate Substances 0.000 title claims description 54
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 238000003384 imaging method Methods 0.000 title description 43
- 238000002347 injection Methods 0.000 claims description 50
- 239000007924 injection Substances 0.000 claims description 50
- 230000000903 blocking effect Effects 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 36
- 238000010894 electron beam technology Methods 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 11
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 11
- 229910001887 tin oxide Inorganic materials 0.000 claims description 11
- 239000007769 metal material Substances 0.000 claims description 9
- 229910003437 indium oxide Inorganic materials 0.000 claims description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 7
- 230000008685 targeting Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 203
- 238000010586 diagram Methods 0.000 description 24
- 230000007547 defect Effects 0.000 description 19
- 229910006404 SnO 2 Inorganic materials 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 239000011669 selenium Substances 0.000 description 10
- 238000002425 crystallisation Methods 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 9
- 230000007774 longterm Effects 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 229910052711 selenium Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000000089 atomic force micrograph Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229940007424 antimony trisulfide Drugs 0.000 description 1
- NVWBARWTDVQPJD-UHFFFAOYSA-N antimony(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Sb+3].[Sb+3] NVWBARWTDVQPJD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Description
前記導電膜は、算術平均粗さが0.15nm以下の平坦度を有し、結晶化していて膜厚が5〜6nmであり、酸化インジウムを主成分とし、酸化スズを7〜13重量%含有することを特徴とする。
電子ビーム発生手段と、
電荷読み出し手段と、を備えたことを特徴とする。
酸化インジウムが主成分であり、酸化スズを7〜13重量%含有する金属材料をターゲットとし、前記透光性基板の温度を300℃以上に保った状態で、スパッタ蒸着法により、前記透光性基板上に、膜厚を5〜6nmの厚さで導電膜を形成する工程を有することを特徴とする。
11 電荷読み出しピン
20 導電膜
25 ターゲット
30 光導電ユニット
31 正孔注入阻止層
32 光導電膜
33 電子注入阻止層
40 光導電素子
50 電荷読み出し手段
60 インジウムリング
70 電子ゲーム発生手段
80 偏向手段
90 メッシュ電極
100 ガラス管
110 ステージ
111 陽極
115 加熱手段
120 チャンバ
121 ガス導入口
122 排気口
130 陰極
140 真空ポンプ
Claims (3)
- 透光性基板と、該透光性基板の上に形成された導電膜と、該導電膜上に正孔注入阻止層を介して形成された光導電膜とを含む光導電素子であって、
前記導電膜は、算術平均粗さが0.15nm以下の平坦度を有し、結晶化していて膜厚が5〜6nmであり、酸化インジウムを主成分とし、酸化スズを7〜13重量%含有することを特徴とする光導電素子。 - 請求項1に記載の光導電素子と、
電子ビーム発生手段と、
電荷読み出し手段と、を備えたことを特徴とする撮像デバイス。 - 透光性基板上に導電膜が形成された導電膜付き基板の製造方法であって、
酸化インジウムが主成分であり、酸化スズを7〜13重量%含有する金属材料をターゲットとし、前記透光性基板の温度を300℃以上に保った状態で、スパッタ蒸着法により、前記透光性基板上に、膜厚を5〜6nmの厚さで導電膜を形成する工程を有することを特徴とする導電膜付き基板の製造方法。
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JP2009253515A JP5584448B2 (ja) | 2009-11-04 | 2009-11-04 | 光導電素子及びこれを用いた撮像デバイス、並びに導電膜付き基板の製造方法 |
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JP2009253515A JP5584448B2 (ja) | 2009-11-04 | 2009-11-04 | 光導電素子及びこれを用いた撮像デバイス、並びに導電膜付き基板の製造方法 |
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JP2011100584A JP2011100584A (ja) | 2011-05-19 |
JP5584448B2 true JP5584448B2 (ja) | 2014-09-03 |
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JP2009253515A Active JP5584448B2 (ja) | 2009-11-04 | 2009-11-04 | 光導電素子及びこれを用いた撮像デバイス、並びに導電膜付き基板の製造方法 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6518038B2 (ja) * | 2014-04-30 | 2019-05-22 | 日本放送協会 | 光電変換素子の製造方法 |
JP6685240B2 (ja) * | 2015-01-27 | 2020-04-22 | 株式会社半導体エネルギー研究所 | 乗員保護装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57208033A (en) * | 1981-06-16 | 1982-12-21 | Toshiba Corp | Target electrode for color image pickup tube and its manufacture |
JPH0754676B2 (ja) * | 1986-04-04 | 1995-06-07 | 株式会社東芝 | X線イメ−ジインテンシフアイア |
JP2880188B2 (ja) * | 1989-08-28 | 1999-04-05 | 株式会社日立製作所 | 受光デバイス |
JPH05174705A (ja) * | 1991-12-20 | 1993-07-13 | Hitachi Denshi Ltd | 撮像管用透明導電膜の製造方法 |
JPH07192663A (ja) * | 1993-12-27 | 1995-07-28 | Hitachi Ltd | 撮像装置 |
JP4911445B2 (ja) * | 2005-06-29 | 2012-04-04 | 富士フイルム株式会社 | 有機と無機のハイブリッド光電変換素子 |
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