JP5582816B2 - カバー固定具及び誘導結合プラズマ処理装置 - Google Patents

カバー固定具及び誘導結合プラズマ処理装置 Download PDF

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Publication number
JP5582816B2
JP5582816B2 JP2010034725A JP2010034725A JP5582816B2 JP 5582816 B2 JP5582816 B2 JP 5582816B2 JP 2010034725 A JP2010034725 A JP 2010034725A JP 2010034725 A JP2010034725 A JP 2010034725A JP 5582816 B2 JP5582816 B2 JP 5582816B2
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JP
Japan
Prior art keywords
gas
cover
processing chamber
support
inductively coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010034725A
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English (en)
Japanese (ja)
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JP2011171153A (ja
Inventor
稔大 笠原
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2010034725A priority Critical patent/JP5582816B2/ja
Priority to CN2011100402542A priority patent/CN102196654B/zh
Priority to KR1020110014373A priority patent/KR101194944B1/ko
Priority to TW100105341A priority patent/TWI490910B/zh
Publication of JP2011171153A publication Critical patent/JP2011171153A/ja
Priority to KR1020120024178A priority patent/KR20120036331A/ko
Application granted granted Critical
Publication of JP5582816B2 publication Critical patent/JP5582816B2/ja
Expired - Fee Related legal-status Critical Current
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119Windows
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211Antennas, e.g. particular shapes of coils
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32513Sealing means, e.g. sealing between different parts of the vessel
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645Radiofrequency discharges
    • H05H1/4652Radiofrequency discharges using inductive coupling means, e.g. coils
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2010034725A 2010-02-19 2010-02-19 カバー固定具及び誘導結合プラズマ処理装置 Expired - Fee Related JP5582816B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010034725A JP5582816B2 (ja) 2010-02-19 2010-02-19 カバー固定具及び誘導結合プラズマ処理装置
CN2011100402542A CN102196654B (zh) 2010-02-19 2011-02-15 罩固定工具及电感耦合等离子处理装置
KR1020110014373A KR101194944B1 (ko) 2010-02-19 2011-02-18 커버 고정구
TW100105341A TWI490910B (zh) 2010-02-19 2011-02-18 Cover plate fixture and induction coupling plasma processing device
KR1020120024178A KR20120036331A (ko) 2010-02-19 2012-03-09 커버 고정구 및 유도 결합 플라즈마 처리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010034725A JP5582816B2 (ja) 2010-02-19 2010-02-19 カバー固定具及び誘導結合プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2011171153A JP2011171153A (ja) 2011-09-01
JP5582816B2 true JP5582816B2 (ja) 2014-09-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010034725A Expired - Fee Related JP5582816B2 (ja) 2010-02-19 2010-02-19 カバー固定具及び誘導結合プラズマ処理装置

Country Status (4)

Country Link
JP (1) JP5582816B2 (zh)
KR (2) KR101194944B1 (zh)
CN (1) CN102196654B (zh)
TW (1) TWI490910B (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6190571B2 (ja) * 2012-01-17 2017-08-30 東京エレクトロン株式会社 プラズマ処理装置
JP5992288B2 (ja) 2012-10-15 2016-09-14 東京エレクトロン株式会社 ガス導入装置及び誘導結合プラズマ処理装置
DE102015110440A1 (de) * 2014-11-20 2016-05-25 Aixtron Se CVD- oder PVD-Reaktor zum Beschichten großflächiger Substrate
JP6446334B2 (ja) * 2015-06-12 2018-12-26 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理装置の制御方法及び記憶媒体
JP6671230B2 (ja) 2016-04-26 2020-03-25 東京エレクトロン株式会社 プラズマ処理装置およびガス導入機構
JP2016167461A (ja) * 2016-05-02 2016-09-15 東京エレクトロン株式会社 プラズマ処理装置
TWI649446B (zh) * 2017-03-15 2019-02-01 漢民科技股份有限公司 應用於半導體設備之可拆卸式噴氣裝置
JP6804392B2 (ja) * 2017-06-05 2020-12-23 東京エレクトロン株式会社 プラズマ処理装置及びガスシャワーヘッド
US11690963B2 (en) 2018-08-22 2023-07-04 Qnovia, Inc. Electronic device for producing an aerosol for inhalation by a person
US11517685B2 (en) 2019-01-18 2022-12-06 Qnovia, Inc. Electronic device for producing an aerosol for inhalation by a person
KR102054236B1 (ko) * 2019-03-15 2019-12-12 주식회사 뉴엠텍 냉각 방식의 샤워헤드
USD1032931S1 (en) * 2019-10-20 2024-06-25 Qnovia, Inc. Vaporizer

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000030898A (ja) * 1998-07-09 2000-01-28 Kokusai Electric Co Ltd プラズマ処理装置
US6331754B1 (en) * 1999-05-13 2001-12-18 Tokyo Electron Limited Inductively-coupled-plasma-processing apparatus
JP3609985B2 (ja) * 1999-05-13 2005-01-12 東京エレクトロン株式会社 誘導結合プラズマ処理装置
JP3599619B2 (ja) * 1999-11-09 2004-12-08 シャープ株式会社 プラズマプロセス装置
JP2002231702A (ja) * 2001-02-07 2002-08-16 Sharp Corp プラズマ処理装置およびプラズマ処理方法
TWI278256B (en) * 2002-10-11 2007-04-01 Au Optronics Corp Plasma processing apparatus
JP4381699B2 (ja) * 2003-03-12 2009-12-09 東京エレクトロン株式会社 プラズマ処理装置
JP4513329B2 (ja) * 2004-01-16 2010-07-28 東京エレクトロン株式会社 処理装置
JP5157199B2 (ja) * 2007-03-07 2013-03-06 東京エレクトロン株式会社 真空容器、耐圧容器及びそれらのシール方法
JP2009021220A (ja) * 2007-06-11 2009-01-29 Tokyo Electron Ltd プラズマ処理装置、アンテナおよびプラズマ処理装置の使用方法
JP5103223B2 (ja) * 2008-02-27 2012-12-19 東京エレクトロン株式会社 マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理装置の使用方法
CN101546702B (zh) * 2009-05-18 2010-08-11 友达光电股份有限公司 等离子体处理装置及其绝缘盖板

Also Published As

Publication number Publication date
TWI490910B (zh) 2015-07-01
KR101194944B1 (ko) 2012-10-25
JP2011171153A (ja) 2011-09-01
KR20110095824A (ko) 2011-08-25
CN102196654A (zh) 2011-09-21
CN102196654B (zh) 2013-03-20
KR20120036331A (ko) 2012-04-17
TW201145346A (en) 2011-12-16

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