JP5571010B2 - 不揮発性半導体記憶装置及びその製造方法 - Google Patents
不揮発性半導体記憶装置及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 111
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 238000002955 isolation Methods 0.000 claims description 44
- 229910052746 lanthanum Inorganic materials 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 40
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 25
- 229920005591 polysilicon Polymers 0.000 claims description 25
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 15
- 238000003860 storage Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims 4
- 238000000137 annealing Methods 0.000 claims 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 61
- 229910052814 silicon oxide Inorganic materials 0.000 description 61
- -1 lanthanum aluminate Chemical class 0.000 description 31
- UZQSJWBBQOJUOT-UHFFFAOYSA-N alumane;lanthanum Chemical compound [AlH3].[La] UZQSJWBBQOJUOT-UHFFFAOYSA-N 0.000 description 18
- 239000000463 material Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 9
- 230000005684 electric field Effects 0.000 description 9
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PBWLVJUKWYROGK-UHFFFAOYSA-N C(C)C1(C=CC=C1)[La](C1(C=CC=C1)CC)C1(C=CC=C1)CC Chemical compound C(C)C1(C=CC=C1)[La](C1(C=CC=C1)CC)C1(C=CC=C1)CC PBWLVJUKWYROGK-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- VZVQQBDFMNEUHK-UHFFFAOYSA-N [La].[Hf] Chemical compound [La].[Hf] VZVQQBDFMNEUHK-UHFFFAOYSA-N 0.000 description 1
- DBOSVWZVMLOAEU-UHFFFAOYSA-N [O-2].[Hf+4].[La+3] Chemical compound [O-2].[Hf+4].[La+3] DBOSVWZVMLOAEU-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 125000005234 alkyl aluminium group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- VYBYZVVRYQDCGQ-UHFFFAOYSA-N alumane;hafnium Chemical compound [AlH3].[Hf] VYBYZVVRYQDCGQ-UHFFFAOYSA-N 0.000 description 1
- PSNPEOOEWZZFPJ-UHFFFAOYSA-N alumane;yttrium Chemical compound [AlH3].[Y] PSNPEOOEWZZFPJ-UHFFFAOYSA-N 0.000 description 1
- DNXNYEBMOSARMM-UHFFFAOYSA-N alumane;zirconium Chemical compound [AlH3].[Zr] DNXNYEBMOSARMM-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42336—Gate electrodes for transistors with a floating gate with one gate at least partly formed in a trench
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
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Description
第1の実施形態にかかる半導体記憶装置31を示す図1及び図2を参照して、本実施形態を説明する。以下、平面セル構造のFG型半導体記憶装置(不揮発性半導体記憶装置)31を例に説明するが、本発明は、このような半導体装置に限定されるものではなく、他の種類の半導体装置においても用いることができる。
本実施形態は、第1の実施形態と比べて、FG3上に形成されるランタンアルミシリケート膜8の領域をFG3上により限定するように、ランタンアルミシリケート膜8を形成するものである。言い換えると、セル上部分81を構成する誘電率の低い絶縁膜8をよりFG3上に限定するように形成することで、その面積が小さくなることから、この絶縁膜8の誘電率をより低くすることが可能になる。従って、より高品質なIPD絶縁膜18をFG3上に形成することができるため、不揮発性半導体記憶装置31の電気特性及び信頼性をより改善することができる。
第1の実施形態においては、ランタンアルミネート膜7とシリコン酸化膜4との混合反応を抑制するアルミナ膜5を、シリコン酸化膜4を完全に覆うように形成していたが、本実施形態においては、アルミナ膜5をFG3の側壁上部を広く覆うように形成するものである。FG3の側壁上部を誘電率の高い膜で広く覆うことができるため、セル上部分81を構成する絶縁膜8の誘電率をより低くすることが可能になる。従って、セル上部分81に欠陥の少ない、より膜質の良いHigh−k絶縁膜を形成することができることから、電気特性及び信頼性に優れる半導体記憶装置を得ることができる。
2 トンネル絶縁膜(第1の絶縁膜)
3 FG(電荷蓄積膜)
4 シリコン酸化膜(素子分離絶縁膜)
5 アルミナ膜
6 シリコン酸化膜
7 ランタンアルミネート膜
8 ランタンアルミシリケート膜
9 制御電極膜
10 上層絶縁膜
11 セル間絶縁膜
18 IPD膜(第2の絶縁膜)
21 素子領域
22 素子分離溝
31 半導体記憶装置
41 ビット線
42 ワード線
43 メモリセル
81 セル上部分
82 セル間部分
Claims (7)
- 半導体基板と、
前記半導体基板に形成された素子分離溝に埋め込まれた素子分離絶縁膜と、
前記素子分離溝により所定間隔だけ隔てられ、且つ、前記半導体基板上に第1の絶縁膜とポリシリコン膜とが順次積層されてなる積層構造の複数のメモリセルと、
前記ポリシリコン膜と前記素子分離絶縁膜との上に形成された第2の絶縁膜と、
前記第2の絶縁膜上に形成され、前記ポリシリコン膜の上面よりも高い位置に下面を有する制御電極膜とを備え、
前記素子分離絶縁膜の上面は前記ポリシリコン膜の上面よりも低く、
前記第2の絶縁膜は、前記ポリシリコン膜上のセル上部分と前記素子分離絶縁膜上のセル間部分とを備え、前記セル上部分の誘電率は前記セル間部分の誘電率よりも低い、
ことを特徴とする不揮発性半導体記憶装置。 - 前記セル間部分は、前記素子分離絶縁膜上に形成された下層絶縁膜と、前記下層絶縁膜上に形成された上層絶縁膜とを備えることを特徴とする請求項1に記載の不揮発性半導体記憶装置。
- 前記下層絶縁膜は、アルミナ膜、シリコン窒化膜、アルミニウム窒化膜、窒化ホウ素膜及びマグネシウム酸化膜から選択された絶縁膜からなることを特徴とする請求項2に記載の不揮発性半導体記憶装置。
- 前記セル上部分は、ランタン、イットリウム、ハフニウム及びジルコニウムから選択される少なくとも1つの元素を備える絶縁膜からなることを特徴とする請求項1から3のいずれか1つに記載の不揮発性半導体記憶装置。
- 半導体基板と、
前記半導体基板に形成された素子分離溝に埋め込まれた素子分離絶縁膜と、
前記素子分離溝により所定間隔だけ隔てられ、且つ、前記半導体基板上に第1の絶縁膜とポリシリコン膜とが順次積層されてなる積層構造の複数のメモリセルと、
前記ポリシリコン膜と前記素子分離絶縁膜との上に形成された第2の絶縁膜と、
前記第2の絶縁膜上に形成され、前記ポリシリコン膜の上面よりも高い位置に下面を有する制御電極膜とを備え、
前記素子分離絶縁膜の上面は前記ポリシリコン膜の上面よりも低く、前記ポリシリコン膜の側壁のうち前記素子分離絶縁膜に接していない側壁部分は、第3の絶縁膜に覆われており、
前記第2の絶縁膜は、前記ポリシリコン膜上のセル上部分と前記素子分離絶縁膜上のセル間部分とを備え、前記セル上部分の誘電率は前記第3の絶縁膜の誘電率よりも低い、
ことを特徴とする不揮発性半導体記憶装置。 - 半導体基板上に第1の絶縁膜を形成し、
前記第1の絶縁膜上にポリシリコン膜を形成し、
前記ポリシリコン膜と前記第1の絶縁膜と前記半導体基板とをエッチングして、前記ポリシリコン膜から前記半導体基板に至る素子分離溝を形成し、
前記素子分離溝を埋め込み、且つ、前記ポリシリコン膜の上面よりもその上面が低くなるように、素子分離絶縁膜を形成し、
前記素子分離絶縁膜上に下層絶縁膜を形成し、
前記ポリシリコン膜の上部を酸化して、酸化膜を形成し、
前記酸化膜と前記下層絶縁膜とを覆うように絶縁材料膜を形成し、
アニールにより前記絶縁材料膜と前記酸化膜とを反応させ、前記下層絶縁膜よりも誘電率の低い絶縁膜を前記ポリシリコン膜上に形成する、
ことを特徴とする不揮発性半導体記憶装置の製造方法。 - 半導体基板上に第1の絶縁膜を形成し、
前記第1の絶縁膜上にポリシリコン膜を形成し、
前記ポリシリコン膜と前記第1の絶縁膜と前記半導体基板とをエッチングして、前記ポリシリコン膜から前記半導体基板に至る素子分離溝を形成し、
前記素子分離溝を埋め込み、且つ、前記ポリシリコン膜の上面よりもその上面が低くなるように、素子分離絶縁膜を形成し、
前記ポリシリコン膜の側壁のうち前記素子分離絶縁膜に接していない側壁部分を覆うように、第3の絶縁膜を形成し、
前記ポリシリコン膜の上部を酸化して、酸化膜を形成し、
前記酸化膜と前記素子分離絶縁膜との上に絶縁材料膜を形成し、
アニールにより前記絶縁材料膜と前記酸化膜とを反応させ、前記第3の絶縁膜よりも誘電率の低い絶縁膜を前記ポリシリコン膜上に形成する、
ことを特徴とする不揮発性半導体記憶装置の製造方法。
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