JP5566093B2 - 固体撮像装置 - Google Patents

固体撮像装置 Download PDF

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Publication number
JP5566093B2
JP5566093B2 JP2009288461A JP2009288461A JP5566093B2 JP 5566093 B2 JP5566093 B2 JP 5566093B2 JP 2009288461 A JP2009288461 A JP 2009288461A JP 2009288461 A JP2009288461 A JP 2009288461A JP 5566093 B2 JP5566093 B2 JP 5566093B2
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JP
Japan
Prior art keywords
semiconductor region
light
type semiconductor
light receiving
main surface
Prior art date
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Expired - Fee Related
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JP2009288461A
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English (en)
Japanese (ja)
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JP2011129785A (ja
JP2011129785A5 (enExample
Inventor
雄一郎 山下
昌也 荻野
旬史 岩田
健太郎 鈴木
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Canon Inc
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Canon Inc
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Publication date
Priority to JP2009288461A priority Critical patent/JP5566093B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority to PCT/JP2010/007224 priority patent/WO2011074234A1/en
Priority to CN201080056463.XA priority patent/CN102652359B/zh
Priority to CN201510124447.4A priority patent/CN104701335A/zh
Priority to US13/515,786 priority patent/US9245919B2/en
Publication of JP2011129785A publication Critical patent/JP2011129785A/ja
Publication of JP2011129785A5 publication Critical patent/JP2011129785A5/ja
Application granted granted Critical
Publication of JP5566093B2 publication Critical patent/JP5566093B2/ja
Priority to US14/972,510 priority patent/US9865631B2/en
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
JP2009288461A 2009-12-18 2009-12-18 固体撮像装置 Expired - Fee Related JP5566093B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009288461A JP5566093B2 (ja) 2009-12-18 2009-12-18 固体撮像装置
CN201080056463.XA CN102652359B (zh) 2009-12-18 2010-12-13 固态图像拾取设备
CN201510124447.4A CN104701335A (zh) 2009-12-18 2010-12-13 固态图像拾取设备
US13/515,786 US9245919B2 (en) 2009-12-18 2010-12-13 Solid-state image pickup apparatus
PCT/JP2010/007224 WO2011074234A1 (en) 2009-12-18 2010-12-13 Solid-state image pickup apparatus
US14/972,510 US9865631B2 (en) 2009-12-18 2015-12-17 Solid-state image pickup apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009288461A JP5566093B2 (ja) 2009-12-18 2009-12-18 固体撮像装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014124750A Division JP5885779B2 (ja) 2014-06-17 2014-06-17 固体撮像装置

Publications (3)

Publication Number Publication Date
JP2011129785A JP2011129785A (ja) 2011-06-30
JP2011129785A5 JP2011129785A5 (enExample) 2013-01-17
JP5566093B2 true JP5566093B2 (ja) 2014-08-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009288461A Expired - Fee Related JP5566093B2 (ja) 2009-12-18 2009-12-18 固体撮像装置

Country Status (4)

Country Link
US (2) US9245919B2 (enExample)
JP (1) JP5566093B2 (enExample)
CN (2) CN104701335A (enExample)
WO (1) WO2011074234A1 (enExample)

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JP5566093B2 (ja) * 2009-12-18 2014-08-06 キヤノン株式会社 固体撮像装置
JP5864990B2 (ja) 2011-10-03 2016-02-17 キヤノン株式会社 固体撮像装置およびカメラ
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CN110164909B (zh) * 2018-04-24 2021-03-16 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
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Also Published As

Publication number Publication date
CN104701335A (zh) 2015-06-10
CN102652359B (zh) 2015-04-08
US9245919B2 (en) 2016-01-26
US20160104728A1 (en) 2016-04-14
WO2011074234A1 (en) 2011-06-23
JP2011129785A (ja) 2011-06-30
US9865631B2 (en) 2018-01-09
US20120298841A1 (en) 2012-11-29
CN102652359A (zh) 2012-08-29

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