JP5564781B2 - 炭化ケイ素半導体装置およびその製造方法 - Google Patents
炭化ケイ素半導体装置およびその製造方法 Download PDFInfo
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- JP5564781B2 JP5564781B2 JP2008292370A JP2008292370A JP5564781B2 JP 5564781 B2 JP5564781 B2 JP 5564781B2 JP 2008292370 A JP2008292370 A JP 2008292370A JP 2008292370 A JP2008292370 A JP 2008292370A JP 5564781 B2 JP5564781 B2 JP 5564781B2
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- semiconductor layer
- silicon carbide
- insulating film
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- type impurity
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- 239000004065 semiconductor Substances 0.000 title claims description 356
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 149
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 142
- 238000004519 manufacturing process Methods 0.000 title claims description 47
- 239000012535 impurity Substances 0.000 claims description 172
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 106
- 238000009792 diffusion process Methods 0.000 claims description 106
- 239000000758 substrate Substances 0.000 claims description 60
- 229910052757 nitrogen Inorganic materials 0.000 claims description 53
- 239000013078 crystal Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 23
- 239000007789 gas Substances 0.000 claims description 22
- 239000011261 inert gas Substances 0.000 claims description 14
- 230000007547 defect Effects 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000003763 carbonization Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 description 32
- 230000015572 biosynthetic process Effects 0.000 description 31
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 28
- 238000000137 annealing Methods 0.000 description 28
- 230000003647 oxidation Effects 0.000 description 20
- 238000007254 oxidation reaction Methods 0.000 description 20
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 16
- 229910052786 argon Inorganic materials 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 14
- 238000000206 photolithography Methods 0.000 description 14
- 238000005468 ion implantation Methods 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 239000000969 carrier Substances 0.000 description 8
- 230000004913 activation Effects 0.000 description 6
- 238000005275 alloying Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 230000002265 prevention Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 3
- -1 for example Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008292370A JP5564781B2 (ja) | 2008-07-07 | 2008-11-14 | 炭化ケイ素半導体装置およびその製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008177134 | 2008-07-07 | ||
| JP2008177134 | 2008-07-07 | ||
| JP2008292370A JP5564781B2 (ja) | 2008-07-07 | 2008-11-14 | 炭化ケイ素半導体装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010041021A JP2010041021A (ja) | 2010-02-18 |
| JP2010041021A5 JP2010041021A5 (enExample) | 2010-04-02 |
| JP5564781B2 true JP5564781B2 (ja) | 2014-08-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008292370A Active JP5564781B2 (ja) | 2008-07-07 | 2008-11-14 | 炭化ケイ素半導体装置およびその製造方法 |
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| Country | Link |
|---|---|
| JP (1) | JP5564781B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8872188B2 (en) | 2010-01-19 | 2014-10-28 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device and method of manufacturing thereof |
| JP5699628B2 (ja) * | 2010-07-26 | 2015-04-15 | 住友電気工業株式会社 | 半導体装置 |
| CN102959709B (zh) * | 2010-07-29 | 2016-05-18 | 住友电气工业株式会社 | 制造碳化硅衬底的方法和制造半导体器件的方法 |
| JP5524103B2 (ja) * | 2011-02-07 | 2014-06-18 | 株式会社東芝 | 半導体装置 |
| JP2012253293A (ja) * | 2011-06-07 | 2012-12-20 | Sumitomo Electric Ind Ltd | 半導体装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4843854B2 (ja) * | 2001-03-05 | 2011-12-21 | 住友電気工業株式会社 | Ｍｏｓデバイス |
| JP5017768B2 (ja) * | 2004-05-31 | 2012-09-05 | 富士電機株式会社 | 炭化珪素半導体素子 |
| JP2006210818A (ja) * | 2005-01-31 | 2006-08-10 | Matsushita Electric Ind Co Ltd | 半導体素子およびその製造方法 |
| JP5157843B2 (ja) * | 2007-12-04 | 2013-03-06 | 住友電気工業株式会社 | 炭化ケイ素半導体装置およびその製造方法 |
| JP5298691B2 (ja) * | 2008-07-31 | 2013-09-25 | 住友電気工業株式会社 | 炭化ケイ素半導体装置およびその製造方法 |
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- 2008-11-14 JP JP2008292370A patent/JP5564781B2/ja active Active
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| Publication number | Publication date |
|---|---|
| JP2010041021A (ja) | 2010-02-18 |
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