JP5558809B2 - 金属・絶縁体・金属キャパシタ及びその製造方法 - Google Patents
金属・絶縁体・金属キャパシタ及びその製造方法 Download PDFInfo
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- JP5558809B2 JP5558809B2 JP2009508342A JP2009508342A JP5558809B2 JP 5558809 B2 JP5558809 B2 JP 5558809B2 JP 2009508342 A JP2009508342 A JP 2009508342A JP 2009508342 A JP2009508342 A JP 2009508342A JP 5558809 B2 JP5558809 B2 JP 5558809B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
104:絶縁体
106:エッチング停止部
404:保護層
Claims (10)
- 第1の導電層と、
第1の長さを有する第1の上面と、前記第1の上面よりも低い第2の上面とを有する、前記第1の導電層上の絶縁体と、
前記絶縁体の前記第1の上面上の第2の長さを有する第2の導電層であって、前記第2の導電層は前記絶縁体との界面において前記絶縁体上にあり、前記第2の導電層の前記第2の長さは前記第1の上面における前記絶縁体の前記第1の長さより短い、当該第2の導電層と、
前記第1の上面に隣接し、前記絶縁体の前記第2の上面上に位置する第1の保護層であって、前記第1の保護層の上面が、前記絶縁体の前記第1の上面と略同一面上にある、当該第1の保護層と、
を含むMIMキャパシタ。 - 前記絶縁体上に位置する前記第2の導電層上に位置し、所定の長さを有するエッチング停止部をさらに含む、請求項1に記載のキャパシタ。
- 所定の長さを有し、前記エッチング停止部上の第2の保護層をさらに含む、請求項2に記載のキャパシタ。
- 前記第2の保護層の前記所定の長さは前記エッチング停止部の前記所定の長さと略等しい、請求項3に記載のキャパシタ。
- 前記絶縁体と、前記絶縁体上の前記第2の導電層との間に、さらに、第3の保護層が設けられる、請求項1〜4のいずれか1項に記載のMIMキャパシタ。
- 前記第1の保護層の少なくとも1つの側方の角が、前記絶縁体の側方の角に当接する、請求項1〜5のいずれか1項に記載のMIMキャパシタ。
- MIMキャパシタを製造するための方法であって、
基板上に第1の導電層を堆積するステップと、
前記第1の導電層上の第1の長さを有する絶縁体を堆積するステップと、
前記絶縁体の一部を除去するステップと、
前記除去された絶縁体によって生成された空間を第1の保護層により充填するステップと、
前記絶縁体上に第2の導電層を堆積するステップと、
前記保護層により前記絶縁体の保護されている部分が除去されることを防ぎながら、前記絶縁体上の前記第2の導電層の一部を除去するステップであって、前記第2の導電層が有する第2の長さが、前記除去後に、除去前の前記第2の導電層との界面における前記絶縁体の前記第1の長さより短くなる、当該ステップと、
を含む方法。 - 前記絶縁体上の前記第2の導電層の上に位置し、所定の長さを有するエッチング停止部を堆積するステップをさらに含む、請求項7に記載の方法。
- 前記エッチング停止部上に第2の保護層を堆積するステップをさらに含む、請求項8に記載の方法。
- 前記絶縁体と前記第2の導電層との間に第3の保護層が形成されるように、前記絶縁体上に前記第3の保護層を堆積するステップをさらに含み、
前記絶縁体の一部を除去するステップは、前記第3の保護層及び前記絶縁体の一部を除去するステップであり、
前記絶縁体上に第2の導電層を堆積するステップは、前記絶縁体上の前記第3の保護層上に前記第2の導電層を堆積するステップである、請求項7〜9のいずれか1項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/382,544 | 2006-05-10 | ||
US11/382,544 US7728372B2 (en) | 2006-05-10 | 2006-05-10 | Method and structure for creation of a metal insulator metal capacitor |
PCT/EP2007/054257 WO2007128754A1 (en) | 2006-05-10 | 2007-05-02 | Method and structure for creation of a metal insulator metal capacitor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009536451A JP2009536451A (ja) | 2009-10-08 |
JP5558809B2 true JP5558809B2 (ja) | 2014-07-23 |
Family
ID=38169397
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009508342A Expired - Fee Related JP5558809B2 (ja) | 2006-05-10 | 2007-05-02 | 金属・絶縁体・金属キャパシタ及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7728372B2 (ja) |
EP (1) | EP2016615A1 (ja) |
JP (1) | JP5558809B2 (ja) |
CN (1) | CN101410943B (ja) |
TW (1) | TWI377664B (ja) |
WO (1) | WO2007128754A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010103140A (ja) * | 2008-10-21 | 2010-05-06 | Seiko Epson Corp | 容量素子及びその製造方法、並びに電気光学装置 |
US8581658B2 (en) * | 2011-04-08 | 2013-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Charge pump |
US9048212B2 (en) | 2012-05-15 | 2015-06-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices, methods of manufacture thereof, and methods of manufacturing capacitors |
CN104241245B (zh) * | 2014-09-15 | 2016-11-16 | 复旦大学 | 一种基于低k材料和铜互连的mim电容及其制备方法 |
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JP2560639B2 (ja) * | 1994-05-30 | 1996-12-04 | 日本電気株式会社 | Mimキャパシタ |
JP3076507B2 (ja) | 1995-06-13 | 2000-08-14 | 松下電子工業株式会社 | 半導体装置、半導体集積回路装置及びその製造方法 |
JP3212930B2 (ja) | 1997-11-26 | 2001-09-25 | 日本電気株式会社 | 容量及びその製造方法 |
JP3626009B2 (ja) * | 1998-04-16 | 2005-03-02 | 富士通株式会社 | 半導体装置の製造方法 |
US6274435B1 (en) * | 1999-01-04 | 2001-08-14 | Taiwan Semiconductor Manufacturing Company | High performance MIM (MIP) IC capacitor process |
US7294544B1 (en) * | 1999-02-12 | 2007-11-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of making a metal-insulator-metal capacitor in the CMOS process |
US6485988B2 (en) * | 1999-12-22 | 2002-11-26 | Texas Instruments Incorporated | Hydrogen-free contact etch for ferroelectric capacitor formation |
KR20020004539A (ko) * | 2000-07-06 | 2002-01-16 | 박종섭 | 수소확산을 방지할 수 있는 강유전체 메모리 소자 제조 방법 |
US6613641B1 (en) * | 2001-01-17 | 2003-09-02 | International Business Machines Corporation | Production of metal insulator metal (MIM) structures using anodizing process |
US6319767B1 (en) * | 2001-03-05 | 2001-11-20 | Chartered Semiconductor Manufacturing Ltd. | Method to eliminate top metal corner shaping during bottom metal patterning for MIM capacitors via plasma ashing and hard masking technique |
JP4947849B2 (ja) * | 2001-05-30 | 2012-06-06 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP4226804B2 (ja) * | 2001-06-25 | 2009-02-18 | 株式会社東芝 | 半導体装置及びその製造方法 |
US6881999B2 (en) * | 2002-03-21 | 2005-04-19 | Samsung Electronics Co., Ltd. | Semiconductor device with analog capacitor and method of fabricating the same |
US6746914B2 (en) * | 2002-05-07 | 2004-06-08 | Chartered Semiconductor Manufacturing Ltd. | Metal sandwich structure for MIM capacitor onto dual damascene |
US6830967B1 (en) * | 2002-10-02 | 2004-12-14 | Newport Fab, Llc | Method for forming CMOS transistor spacers in a BiCMOS process |
US6730573B1 (en) * | 2002-11-01 | 2004-05-04 | Chartered Semiconductor Manufacturing Ltd. | MIM and metal resistor formation at CU beol using only one extra mask |
US6830971B2 (en) * | 2002-11-02 | 2004-12-14 | Chartered Semiconductor Manufacturing Ltd | High K artificial lattices for capacitor applications to use in CU or AL BEOL |
US6940117B2 (en) * | 2002-12-03 | 2005-09-06 | International Business Machines Corporation | Prevention of Ta2O5 mim cap shorting in the beol anneal cycles |
KR100539198B1 (ko) * | 2003-03-10 | 2005-12-27 | 삼성전자주식회사 | 금속-절연체-금속 캐패시터 및 그 제조 방법 |
JP3765309B2 (ja) * | 2003-06-20 | 2006-04-12 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US7019352B2 (en) * | 2003-08-07 | 2006-03-28 | Texas Instruments Incorporated | Low silicon-hydrogen sin layer to inhibit hydrogen related degradation in semiconductor devices having ferroelectric components |
DE10341059B4 (de) * | 2003-09-05 | 2007-05-31 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit Kondensator und Herstellungsverfahren |
US6878616B1 (en) * | 2003-11-21 | 2005-04-12 | International Business Machines Corporation | Low-k dielectric material system for IC application |
US7205634B2 (en) * | 2004-03-10 | 2007-04-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | MIM structure and fabrication process with improved capacitance reliability |
KR100670396B1 (ko) * | 2004-12-30 | 2007-01-16 | 동부일렉트로닉스 주식회사 | 사이드 로브 현상을 이용한 실린더형 커패시터 형성 방법 |
-
2006
- 2006-05-10 US US11/382,544 patent/US7728372B2/en active Active
-
2007
- 2007-05-02 EP EP07728711A patent/EP2016615A1/en not_active Withdrawn
- 2007-05-02 CN CN2007800108669A patent/CN101410943B/zh active Active
- 2007-05-02 JP JP2009508342A patent/JP5558809B2/ja not_active Expired - Fee Related
- 2007-05-02 WO PCT/EP2007/054257 patent/WO2007128754A1/en active Application Filing
- 2007-05-04 TW TW096115993A patent/TWI377664B/zh not_active IP Right Cessation
-
2010
- 2010-02-17 US US12/706,834 patent/US8227849B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2007128754A1 (en) | 2007-11-15 |
CN101410943B (zh) | 2012-06-20 |
TWI377664B (en) | 2012-11-21 |
US20100149723A1 (en) | 2010-06-17 |
US20070262416A1 (en) | 2007-11-15 |
CN101410943A (zh) | 2009-04-15 |
JP2009536451A (ja) | 2009-10-08 |
US7728372B2 (en) | 2010-06-01 |
TW200810082A (en) | 2008-02-16 |
US8227849B2 (en) | 2012-07-24 |
EP2016615A1 (en) | 2009-01-21 |
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