JP5552573B2 - 光学素子及びそれを用いた半導体発光装置 - Google Patents

光学素子及びそれを用いた半導体発光装置 Download PDF

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Publication number
JP5552573B2
JP5552573B2 JP2013523771A JP2013523771A JP5552573B2 JP 5552573 B2 JP5552573 B2 JP 5552573B2 JP 2013523771 A JP2013523771 A JP 2013523771A JP 2013523771 A JP2013523771 A JP 2013523771A JP 5552573 B2 JP5552573 B2 JP 5552573B2
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JP
Japan
Prior art keywords
light
optical element
phosphor
phosphor layer
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013523771A
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English (en)
Japanese (ja)
Other versions
JPWO2013008361A1 (ja
Inventor
一彦 山中
信一 瀧川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2013523771A priority Critical patent/JP5552573B2/ja
Application granted granted Critical
Publication of JP5552573B2 publication Critical patent/JP5552573B2/ja
Publication of JPWO2013008361A1 publication Critical patent/JPWO2013008361A1/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0062—Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
    • G02F2/02—Frequency-changing of light, e.g. by quantum counters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Planar Illumination Modules (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
JP2013523771A 2011-07-12 2012-03-08 光学素子及びそれを用いた半導体発光装置 Expired - Fee Related JP5552573B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013523771A JP5552573B2 (ja) 2011-07-12 2012-03-08 光学素子及びそれを用いた半導体発光装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011153904 2011-07-12
JP2011153904 2011-07-12
PCT/JP2012/001612 WO2013008361A1 (ja) 2011-07-12 2012-03-08 光学素子及びそれを用いた半導体発光装置
JP2013523771A JP5552573B2 (ja) 2011-07-12 2012-03-08 光学素子及びそれを用いた半導体発光装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013200226A Division JP5613309B2 (ja) 2011-07-12 2013-09-26 光学素子及びそれを用いた半導体発光装置

Publications (2)

Publication Number Publication Date
JP5552573B2 true JP5552573B2 (ja) 2014-07-16
JPWO2013008361A1 JPWO2013008361A1 (ja) 2015-02-23

Family

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Family Applications (2)

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JP2013523771A Expired - Fee Related JP5552573B2 (ja) 2011-07-12 2012-03-08 光学素子及びそれを用いた半導体発光装置
JP2013200226A Expired - Fee Related JP5613309B2 (ja) 2011-07-12 2013-09-26 光学素子及びそれを用いた半導体発光装置

Family Applications After (1)

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JP2013200226A Expired - Fee Related JP5613309B2 (ja) 2011-07-12 2013-09-26 光学素子及びそれを用いた半導体発光装置

Country Status (4)

Country Link
US (1) US8969903B2 (OSRAM)
JP (2) JP5552573B2 (OSRAM)
CN (1) CN103503178B (OSRAM)
WO (1) WO2013008361A1 (OSRAM)

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TWI705214B (zh) 2015-10-09 2020-09-21 日商松下知識產權經營股份有限公司 照明裝置
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JP6948120B2 (ja) * 2015-11-30 2021-10-13 大日本印刷株式会社 積層体の製造方法、積層体、バックライト装置、および表示装置
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Also Published As

Publication number Publication date
US20140084325A1 (en) 2014-03-27
JP5613309B2 (ja) 2014-10-22
CN103503178B (zh) 2015-04-29
JP2014075584A (ja) 2014-04-24
WO2013008361A1 (ja) 2013-01-17
US8969903B2 (en) 2015-03-03
CN103503178A (zh) 2014-01-08
JPWO2013008361A1 (ja) 2015-02-23

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