JP5548763B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
- Publication number
- JP5548763B2 JP5548763B2 JP2012282452A JP2012282452A JP5548763B2 JP 5548763 B2 JP5548763 B2 JP 5548763B2 JP 2012282452 A JP2012282452 A JP 2012282452A JP 2012282452 A JP2012282452 A JP 2012282452A JP 5548763 B2 JP5548763 B2 JP 5548763B2
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- electrode
- battery
- shaped
- disk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 43
- 238000005520 cutting process Methods 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 99
- 229910052710 silicon Inorganic materials 0.000 description 99
- 239000010703 silicon Substances 0.000 description 99
- 238000000034 method Methods 0.000 description 28
- 239000000463 material Substances 0.000 description 14
- 239000002994 raw material Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000007769 metal material Substances 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- -1 ITO Substances 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
図2を参照すると、本実施例は太陽電池の製造方法及び該製造方法によって得られる太陽電池を提供する。本実施例の太陽電池の製造方法は、円板状のpn接合構造体202を提供するステップ(S11)と、円板状のpn接合構造体202の対向する二つの表面にそれぞれ第一電極層232及び第二電極層234を設置し、一つの直線上に順に配列された第一電極層232と、pn接合構造体202と、第二電極層234と、を含む円板状の電池予備成形体ユニット240を得るステップ(S12)と、直線に平行な方向に沿って、円板状の電池予備成形体ユニット240をいくつかに切断して、少なくとも一つの四角形第一電池ユニット250と、一つの曲面を含む複数の第二電池ユニット260と、を形成するステップ(S13)と、を含む。
本実施例は太陽電池の製造方法及び該製造方法によって得られる太陽電池を提供する。本実施例の太陽電池の製造方法は、円板状のpn接合構造体を提供するステップ(S21)と、円板状のpn接合構造体の対向する二つの表面にそれぞれ第一電極層及び第二電極層を設置し、一つの直線上に順に配列された第一電極層と、pn接合構造体と、第二電極層と、を含む円板状の電池予備成形体ユニットを得るステップ(S22)と、直線に平行な方向に沿って、円板状の電池予備成形体ユニットをいくつかに切断して、複数の四角形第一電池ユニットと、一つの曲面を含む複数の第二電池ユニットと、を形成するステップ(S23)と、を含む。
図12を参照すると、本実施例は太陽電池の製造方法及び該製造方法によって得られる太陽電池を提供する。本実施例の太陽電池の製造方法は、円板状のpn接合構造体202を提供するステップ(S31)と、円板状のpn接合構造体202の厚さをその厚さ方向に沿って、円板状のpn接合構造体202をいくつかに切断して、一つの四角形第一pn接合構造体ユニット305と、円弧面366及び切断面367を含む複数の第二pn接合構造体ユニット306と、を形成するステップ(S32)と、複数の第二pn接合構造体ユニット306を一つの直線上に順に配列し、複数の第二pn接合構造体ユニット306の、円弧面366を全て横一列に並べ、切断面367を全て横一列に並ぶように配列させ、隣接した二つの第二pn接合構造体ユニット306毎の間に一つの電極層316を形成して、太陽電池予備成形体310を得るステップ(S33)と、太陽電池予備成形体310の両端の二つの第二pn接合構造体ユニット306の最外表面にそれぞれ一つの収集電極326を形成して、第八種の太陽電池30を得るステップ(S34)と、を含む。
図14を参照すると、本実施例は太陽電池の製造方法及び該製造方法によって得られる太陽電池を提供する。本実施例の太陽電池の製造方法は、円板状のpn接合構造体202を提供するステップ(S41)と、円板状のpn接合構造体202を、一つの直線上に順に配列し、隣接した二つの円板状のpn接合構造体202毎の間に一つの電極層416を形成し、両端の二つの円板状のpn接合構造体202の最外表面にそれぞれ一つの収集電極426を形成し、太陽電池母体401を得るステップ(S42)と、太陽電池母体401の円形断面の互いに垂直した二つの直径を切断線411として、太陽電池母体401の長軸に平行する方向に沿って、太陽電池母体401を二つに切断して、四つの第十種の太陽電池40を得るステップ(S43)と、を含む。
30、300、40、400 太陽電池
202 pn接合構造体
232 第一電極層
234 第二電極層
240 電池予備成形体ユニット
250 第一電池ユニット
260 第二電池ユニット
245、259、243、244、229、411 切断線
222、252、262 P型シリコン層
224、253、263 N型シリコン層
251、261 第一電極
254、264 第二電極
201 シリコン原材料
2621、2631 第一表面
2623、2633 第二表面
212 円形シリコン薄片
267、367 切断面
268 交差線
266、276、286、296、2761 円弧面
2861、2961、366、466 円弧面
2661、2662 側面
269 反射素子
270 第一サブ電池ユニット
280 第二サブ電池ユニット
290 第三サブ電池ユニット
237 第一サブ電池ユニット組
238 第二サブ電池ユニット組
239 第三サブ電池ユニット組
305 第一pn接合構造体ユニット
306 第二pn接合構造体ユニット
316、416 電極層
326、426 収集電極
310 太陽電池予備成形体
401 太陽電池母体
10 シリコン太陽電池
12 背面電池
14 P型シリコン層
16 N型シリコン層
18 前面電極
142 第一表面
144 第二表面
Claims (3)
- 円板状のpn接合構造体を提供する第一ステップと、
前記円板状のpn接合構造体の対向する二つの表面にそれぞれ第一電極層及び第二電極層を設置し、前記円板状のpn接合構造体の円面に垂直する中心軸に沿って順に配列された第一電極層と、pn接合構造体と、第二電極層と、を含む円板状の電池予備成形体ユニットを得る第二ステップと、
前記中心軸に平行な方向に沿って、円板状の電池予備成形体ユニットを数回切断して、複数の四角形第一電池ユニットと、一つの曲面を含む複数の第二電池ユニットと、を形成する第三ステップと、
を含み、
前記第一電池ユニットにおいては切断面の少なくとも一つを光入射面とし、前記第二電池ユニットにおいては前記曲面を光入射面としたことを特徴とする太陽電池の製造方法。 - 複数の円板状のpn接合構造体を提供する第一ステップと、
複数の円板状のpn接合構造体を、該円板状のpn接合構造体の円面に垂直する中心軸に沿って順に配列し、隣接する二つの円板状のpn接合構造体の間にそれぞれ一つの電極層を形成し、両端の二つの円板状のpn接合構造体の最外表面にそれぞれ一つの収集電極を形成して太陽電池母体を得る第二ステップと、
前記中心軸に平行する方向に沿って、太陽電池母体をいくつかに切断して、一つの曲面を含む複数の太陽電池を得る第三ステップと、
を含み、
前記曲面を光入射面としたことを特徴とする太陽電池の製造方法。 - 複数の第二電池ユニットを数列数行に配列して電池の組を形成し、行毎に配列された複数の第二電池ユニットを互いに直列させ、各々の列に配列された複数の第二電池ユニットを互いに並列させ、
行毎に配列された複数の第二電池ユニットにおいて、各々の第二電池ユニットの第二電極は、隣接する第二電池ユニットの第一電極に接触され、列毎に配列された複数の第二電池ユニットにおいて、隣接する二つの第二電池ユニットの、第一電極は互いに接触され、第二電極は互いに接触され、
前記複数の第二電池ユニットを数列数行に配列して形成された電池の組において、前記各第二電池ユニットの前記曲面からなる波浪型面を光入射面としたことを特徴とする、請求項1に記載の太陽電池の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110450133.5 | 2011-12-29 | ||
CN201110450133.5A CN103187476B (zh) | 2011-12-29 | 2011-12-29 | 太阳能电池的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013140970A JP2013140970A (ja) | 2013-07-18 |
JP5548763B2 true JP5548763B2 (ja) | 2014-07-16 |
Family
ID=48678559
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012282452A Active JP5548763B2 (ja) | 2011-12-29 | 2012-12-26 | 太陽電池の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8871533B2 (ja) |
JP (1) | JP5548763B2 (ja) |
CN (1) | CN103187476B (ja) |
TW (1) | TWI495123B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103187477B (zh) * | 2011-12-29 | 2016-03-30 | 清华大学 | 太阳能电池的制备方法 |
CN103187475B (zh) * | 2011-12-29 | 2015-11-25 | 清华大学 | 太阳能电池的制备方法 |
CN103367560B (zh) * | 2012-03-30 | 2016-08-10 | 清华大学 | 发光二极管的制备方法 |
CN107689332B (zh) * | 2014-10-15 | 2019-07-26 | 申宇慈 | 导线柱体集成体、功能性柱体及其集成体、以及功能性基板 |
CN112750917B (zh) * | 2019-10-30 | 2022-08-12 | 泰州隆基乐叶光伏科技有限公司 | 电池组件生产方法、电池组件 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3422527A (en) * | 1965-06-21 | 1969-01-21 | Int Rectifier Corp | Method of manufacture of high voltage solar cell |
US4110122A (en) | 1976-05-26 | 1978-08-29 | Massachusetts Institute Of Technology | High-intensity, solid-state-solar cell device |
JPS5366390A (en) | 1977-12-05 | 1978-06-13 | Sharp Corp | Longitudinal multi junction solar cell |
JPS6311789B2 (ja) * | 1978-05-12 | 1988-03-16 | Sutepanoitsuchi Ridorenko Nikorai | |
JPS62105485A (ja) | 1985-10-31 | 1987-05-15 | Sharp Corp | 半導体基体の製造方法 |
AU602114B2 (en) | 1987-09-08 | 1990-09-27 | Ebara Solar, Inc. | Method for texturing a silicon surface of any crystallographic orientation using an isotropic etch and photolithography and silicon crystals made thereby |
JP3617923B2 (ja) * | 1998-04-06 | 2005-02-09 | 信越化学工業株式会社 | 単結晶シリコン太陽電池及びモジュールの作製方法 |
JP2001313401A (ja) | 2000-04-28 | 2001-11-09 | Kyocera Corp | 光電変換装置 |
JP2002094099A (ja) | 2000-09-13 | 2002-03-29 | Sanyo Electric Co Ltd | 太陽電池装置 |
WO2002035612A1 (en) | 2000-10-20 | 2002-05-02 | Josuke Nakata | Light-emitting or light-receiving semiconductor device and method for fabricating the same |
WO2003005457A1 (en) | 2001-07-04 | 2003-01-16 | Ebara Corporation | Solar cell module and method of manufacturing the same |
JP3902210B2 (ja) | 2002-05-02 | 2007-04-04 | 仗祐 中田 | 受光又は発光用パネルおよびその製造方法 |
US7335908B2 (en) | 2002-07-08 | 2008-02-26 | Qunano Ab | Nanostructures and methods for manufacturing the same |
JP3866747B2 (ja) | 2002-10-15 | 2007-01-10 | シャープ株式会社 | 太陽電池モジュール |
JP4534077B2 (ja) * | 2003-10-20 | 2010-09-01 | 信越化学工業株式会社 | 太陽電池モジュールの製造方法 |
JP5219512B2 (ja) * | 2004-08-09 | 2013-06-26 | トランスフォーム・ソーラー・ピーティーワイ・リミテッド | 太陽電池(細長い小片)サブモジュール構造 |
JP3687970B1 (ja) | 2004-12-24 | 2005-08-24 | 信越化学工業株式会社 | 太陽光発電用モジュール及びこれを用いた太陽光発電システム |
CN100521252C (zh) * | 2004-09-03 | 2009-07-29 | 信越化学工业株式会社 | 太阳光发电用模块及使用其的太阳光发电系统 |
US20080185033A1 (en) | 2007-02-06 | 2008-08-07 | Kalejs Juris P | Solar electric module |
US8723332B2 (en) | 2007-06-11 | 2014-05-13 | Invensas Corporation | Electrically interconnected stacked die assemblies |
US20090211633A1 (en) | 2008-02-21 | 2009-08-27 | Konarka Technologies Inc. | Tandem Photovoltaic Cells |
AU2009260580B2 (en) | 2008-05-27 | 2015-07-16 | University Of Houston | Fiber photovoltaic devices and methods for production thereof |
WO2010134019A2 (en) | 2009-05-19 | 2010-11-25 | Ramot At Tel Aviv University Ltd. | Vertical junction pv cells |
JPWO2011024534A1 (ja) | 2009-08-27 | 2013-01-24 | 独立行政法人産業技術総合研究所 | 多接合光電変換装置、集積型多接合光電変換装置、並びにその製造方法 |
US8900674B2 (en) | 2009-10-06 | 2014-12-02 | Tel Solar Ag | Method of coating a substrate |
JP2011086647A (ja) | 2009-10-13 | 2011-04-28 | Hokkaido Univ | 光電変換素子評価装置、光電変換素子評価方法および光電変換素子の製造方法 |
TW201133881A (en) | 2010-03-22 | 2011-10-01 | Auria Solar Co Ltd | Thin film solar cell and manufacturing method thereof |
TWM416877U (en) | 2011-04-29 | 2011-11-21 | Auria Solar Co Ltd | Solar cell module |
-
2011
- 2011-12-29 CN CN201110450133.5A patent/CN103187476B/zh active Active
-
2012
- 2012-01-02 TW TW101100107A patent/TWI495123B/zh active
- 2012-07-24 US US13/556,279 patent/US8871533B2/en active Active
- 2012-12-26 JP JP2012282452A patent/JP5548763B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
TWI495123B (zh) | 2015-08-01 |
CN103187476B (zh) | 2016-06-15 |
TW201327870A (zh) | 2013-07-01 |
CN103187476A (zh) | 2013-07-03 |
US8871533B2 (en) | 2014-10-28 |
JP2013140970A (ja) | 2013-07-18 |
US20130171758A1 (en) | 2013-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI431792B (zh) | An integrated multi-junction photoelectric conversion device, and a method of manufacturing the same | |
JP5548763B2 (ja) | 太陽電池の製造方法 | |
JP5596114B2 (ja) | 太陽電池 | |
JP5155241B2 (ja) | 太陽電池 | |
JP5646586B2 (ja) | 太陽電池 | |
JP5596113B2 (ja) | 太陽電池 | |
US20110011448A1 (en) | Thin film solar cell and method of manufacturing the same | |
JP2016029675A (ja) | 薄膜太陽電池用透光性絶縁基板、及び集積型薄膜シリコン太陽電池 | |
JP5460845B2 (ja) | 太陽電池 | |
JP5531082B2 (ja) | 太陽電池 | |
TWI482295B (zh) | 太陽能電池 | |
JP2013115434A (ja) | 太陽電池及びその製造方法 | |
JP5266375B2 (ja) | 薄膜太陽電池及びその製造方法 | |
TWI489645B (zh) | 太陽能電池的製備方法 | |
TWI463688B (zh) | 太陽能電池的製備方法 | |
JP2007059799A (ja) | 太陽電池およびその製造方法 | |
WO2011057529A1 (zh) | 一种非晶硅薄膜太阳能电池及制备方法 | |
CN211507649U (zh) | 一种无激光切割的高效半片太阳电池及组件 | |
KR20120034308A (ko) | 박막형 태양전지 및 박막형 태양전지의 제조방법 | |
WO2011145206A1 (ja) | 薄膜太陽電池 | |
TWI426618B (zh) | 太陽能電池及其製備方法 | |
TW201201378A (en) | Flexible solar energy battery device | |
KR20110136385A (ko) | 양면 태양 전지 | |
JP2013074277A (ja) | 光電変換装置 | |
KR20120065703A (ko) | 박막형 태양전지 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20131127 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131210 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140307 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140421 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140519 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5548763 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |