JP5548127B2 - 線状のビーム断面を有するレーザビームを生成するための方法及び構成 - Google Patents
線状のビーム断面を有するレーザビームを生成するための方法及び構成 Download PDFInfo
- Publication number
- JP5548127B2 JP5548127B2 JP2010524341A JP2010524341A JP5548127B2 JP 5548127 B2 JP5548127 B2 JP 5548127B2 JP 2010524341 A JP2010524341 A JP 2010524341A JP 2010524341 A JP2010524341 A JP 2010524341A JP 5548127 B2 JP5548127 B2 JP 5548127B2
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- laser beam
- optical system
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- imaging
- Prior art date
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Links
- 238000000034 method Methods 0.000 title claims description 18
- 230000003287 optical effect Effects 0.000 claims description 69
- 238000003384 imaging method Methods 0.000 claims description 45
- 210000001747 pupil Anatomy 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 239000000758 substrate Substances 0.000 description 7
- 101150063173 SAH1 gene Proteins 0.000 description 6
- 238000012634 optical imaging Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000007493 shaping process Methods 0.000 description 4
- 101100235511 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) LHP1 gene Proteins 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000265 homogenisation Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000010309 melting process Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/095—Refractive optical elements
- G02B27/0955—Lenses
- G02B27/0966—Cylindrical lenses
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Lenses (AREA)
- Laser Beam Processing (AREA)
- Lasers (AREA)
- Microscoopes, Condenser (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007044298A DE102007044298B3 (de) | 2007-09-17 | 2007-09-17 | Verfahren und Anordnung zum Erzeugen eines Laserstrahls mit einem linienhaften Strahlquerschnitt |
| DE102007044298.1 | 2007-09-17 | ||
| PCT/DE2008/001181 WO2009036716A1 (de) | 2007-09-17 | 2008-07-18 | Verfahren und anordnung zum erzeugen eines laserstrahls mit einem linienhaften strahlquerschnitt |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011501872A JP2011501872A (ja) | 2011-01-13 |
| JP2011501872A5 JP2011501872A5 (enExample) | 2013-12-12 |
| JP5548127B2 true JP5548127B2 (ja) | 2014-07-16 |
Family
ID=40070896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010524341A Expired - Fee Related JP5548127B2 (ja) | 2007-09-17 | 2008-07-18 | 線状のビーム断面を有するレーザビームを生成するための方法及び構成 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5548127B2 (enExample) |
| KR (1) | KR101529344B1 (enExample) |
| CN (1) | CN101801586B (enExample) |
| DE (1) | DE102007044298B3 (enExample) |
| WO (1) | WO2009036716A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010027196B4 (de) * | 2010-07-07 | 2012-03-08 | Carl Zeiss Laser Optics Gmbh | Optisches System zum Erzeugen eines Linienfokus sowie Vorrichtung zum Behandeln eines Substrats mit einem solchen optischen System |
| DE102010045620B4 (de) * | 2010-09-17 | 2016-09-01 | Limo Patentverwaltung Gmbh & Co. Kg | Vorrichtung zur Erzeugung einer linienförmigen Intensitätsverteilung in einer Arbeitsebene |
| KR101257827B1 (ko) * | 2012-09-20 | 2013-04-29 | (주)프로비전 | 라인형 레이저 빔 형성 장치 및 이를 이용한 터치 패널 제조 방법 |
| DE102012111098B4 (de) * | 2012-11-19 | 2016-03-03 | Scanlab Ag | Divergenzänderungsvorrichtung |
| DE102014213775B4 (de) * | 2014-07-15 | 2018-02-15 | Innolas Solutions Gmbh | Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen, kristallinen Substraten, insbesondere von Halbleitersubstraten |
| DE102015002537B4 (de) * | 2015-02-27 | 2017-11-09 | Innovavent Gmbh | Optisches System und optisches Verfahren zum Homogenisieren der Intensität von Laserstrahlung sowie Anlage zur Bearbeitung von Dünnfilmschichten |
| KR102440115B1 (ko) | 2015-11-13 | 2022-09-05 | 삼성디스플레이 주식회사 | 엑시머 레이저 어닐링 방법 |
| PL3491450T3 (pl) * | 2016-07-27 | 2024-06-24 | Trumpf Laser Gmbh | Naświetlanie linią laserową |
| DE102017115964B4 (de) | 2017-07-14 | 2020-04-02 | LIMO GmbH | Vorrichtung zur Erzeugung einer linienförmigen Intensitätsverteilung einer Laserstrahlung |
| US11366331B2 (en) * | 2017-12-05 | 2022-06-21 | Panasonic Intellectual Property Management Co., Ltd. | Beam converting optical system and light source device |
| DE102018216940A1 (de) | 2018-10-02 | 2020-04-02 | 3D-Micromac Ag | Laserbearbeitungssystem |
| DE102019102511B4 (de) * | 2019-01-31 | 2020-08-20 | Trumpf Laser- Und Systemtechnik Gmbh | Lasersystem |
| DE102019206976B3 (de) * | 2019-05-14 | 2020-11-12 | Trumpf Laser Gmbh | Optisches System zum Erzeugen zweier Laserfokuslinien sowie Verfahren zum gleichzeitigen Bearbeiten zweier einander gegenüberliegender, paralleler Werkstückseiten eines Werkstücks |
| DE102019118676B4 (de) * | 2019-07-10 | 2021-10-21 | Innovavent Gmbh | Optisches System zur Homogenisierung der Intensität von Lichtstrahlung und Anlage zur Bearbeitung einer Halbleitermaterialschicht |
| DE102020126267A1 (de) * | 2020-10-07 | 2022-04-07 | Trumpf Laser- Und Systemtechnik Gmbh | Vorrichtung zum Erzeugen einer Laserlinie auf einer Arbeitsebene |
| DE102020130651B3 (de) | 2020-11-19 | 2022-05-05 | Trumpf Laser- Und Systemtechnik Gmbh | Vorrichtung zum Erzeugen einer definierten Laserbeleuchtung auf einer Arbeitsebene |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3917231B2 (ja) * | 1996-02-06 | 2007-05-23 | 株式会社半導体エネルギー研究所 | レーザー照射装置およびレーザー照射方法 |
| CN1072364C (zh) * | 1997-05-29 | 2001-10-03 | 中国科学院上海光学精密机械研究所 | 超精细结构的光学测量系统 |
| US6583937B1 (en) * | 1998-11-30 | 2003-06-24 | Carl-Zeiss Stiftung | Illuminating system of a microlithographic projection exposure arrangement |
| TW528879B (en) * | 2001-02-22 | 2003-04-21 | Ishikawajima Harima Heavy Ind | Illumination optical system and laser processor having the same |
| US7009140B2 (en) * | 2001-04-18 | 2006-03-07 | Cymer, Inc. | Laser thin film poly-silicon annealing optical system |
| JPWO2004017392A1 (ja) * | 2002-08-13 | 2005-12-08 | 株式会社東芝 | レーザ照射方法 |
| JP2005079470A (ja) * | 2003-09-02 | 2005-03-24 | Nikon Corp | 照明光学系の調整方法、露光装置及び方法、並びにデバイス製造方法 |
| WO2005085935A1 (de) * | 2004-03-06 | 2005-09-15 | Hentze-Lissotschenko Gmbh & Co. Kg | Vorrichtung zur homogenisierung von licht sowie anordnung zur beleuchtung oder fokussierung mit einer derartigen vorrichtung |
| KR20070090246A (ko) * | 2004-12-22 | 2007-09-05 | 칼 짜이스 레이저 옵틱스 게엠베하 | 선형 빔을 형성하기 위한 광 조명 시스템 |
| WO2007049525A1 (en) * | 2005-10-26 | 2007-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and manufacturing method of semiconductor device |
-
2007
- 2007-09-17 DE DE102007044298A patent/DE102007044298B3/de not_active Expired - Fee Related
-
2008
- 2008-07-18 JP JP2010524341A patent/JP5548127B2/ja not_active Expired - Fee Related
- 2008-07-18 WO PCT/DE2008/001181 patent/WO2009036716A1/de not_active Ceased
- 2008-07-18 CN CN2008801070697A patent/CN101801586B/zh not_active Expired - Fee Related
- 2008-07-18 KR KR1020107005492A patent/KR101529344B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR101529344B1 (ko) | 2015-06-16 |
| WO2009036716A1 (de) | 2009-03-26 |
| JP2011501872A (ja) | 2011-01-13 |
| DE102007044298B3 (de) | 2009-02-26 |
| KR20100065326A (ko) | 2010-06-16 |
| CN101801586A (zh) | 2010-08-11 |
| CN101801586B (zh) | 2013-12-11 |
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