JP5530669B2 - 半導体回路 - Google Patents

半導体回路

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Publication number
JP5530669B2
JP5530669B2 JP2009156906A JP2009156906A JP5530669B2 JP 5530669 B2 JP5530669 B2 JP 5530669B2 JP 2009156906 A JP2009156906 A JP 2009156906A JP 2009156906 A JP2009156906 A JP 2009156906A JP 5530669 B2 JP5530669 B2 JP 5530669B2
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JP
Japan
Prior art keywords
current
voltage
circuit
transistor
internal node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009156906A
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English (en)
Japanese (ja)
Other versions
JP2011015136A (ja
JP2011015136A5 (enExample
Inventor
仁 牧島
孝信 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2009156906A priority Critical patent/JP5530669B2/ja
Publication of JP2011015136A publication Critical patent/JP2011015136A/ja
Publication of JP2011015136A5 publication Critical patent/JP2011015136A5/ja
Application granted granted Critical
Publication of JP5530669B2 publication Critical patent/JP5530669B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
JP2009156906A 2009-07-01 2009-07-01 半導体回路 Active JP5530669B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009156906A JP5530669B2 (ja) 2009-07-01 2009-07-01 半導体回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009156906A JP5530669B2 (ja) 2009-07-01 2009-07-01 半導体回路

Publications (3)

Publication Number Publication Date
JP2011015136A JP2011015136A (ja) 2011-01-20
JP2011015136A5 JP2011015136A5 (enExample) 2012-02-16
JP5530669B2 true JP5530669B2 (ja) 2014-06-25

Family

ID=43593597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009156906A Active JP5530669B2 (ja) 2009-07-01 2009-07-01 半導体回路

Country Status (1)

Country Link
JP (1) JP5530669B2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10192870B2 (en) 2017-01-19 2019-01-29 Fuji Electric Co., Ltd. Semiconductor device
US10763851B2 (en) 2019-01-04 2020-09-01 Kabushiki Kaisha Toshiba Gate control circuit and transistor drive circuit

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5605263B2 (ja) * 2011-02-23 2014-10-15 株式会社デンソー 負荷駆動装置
EP3224952B1 (en) * 2014-11-24 2021-10-06 Bang & Olufsen A/S Solid state switch relay
DE112014007270B4 (de) * 2014-12-17 2024-05-23 Mitsubishi Electric Corporation Pegelverschiebungsschaltung, integrierte Schaltung und Leistungshalbleitermodul
CN108181621A (zh) * 2016-12-08 2018-06-19 北京万集科技股份有限公司 一种双激光驱动电路和扫描式激光雷达测距设备及方法
JP7210928B2 (ja) 2018-08-06 2023-01-24 富士電機株式会社 高耐圧集積回路
JP7395831B2 (ja) 2019-03-11 2023-12-12 富士電機株式会社 駆動回路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0752828B2 (ja) * 1989-06-19 1995-06-05 株式会社日立製作所 半導体素子の駆動方法
JPH10233661A (ja) * 1997-02-21 1998-09-02 Matsushita Electric Works Ltd レベルシフト回路
JP2001358567A (ja) * 2000-06-14 2001-12-26 Toshiba Microelectronics Corp 半導体集積回路
JP4401593B2 (ja) * 2001-04-03 2010-01-20 三菱電機株式会社 レベルシフト回路
JP3863474B2 (ja) * 2002-09-25 2006-12-27 三菱電機株式会社 駆動回路及び半導体装置
JP4686589B2 (ja) * 2008-11-17 2011-05-25 三菱電機株式会社 レベルシフト回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10192870B2 (en) 2017-01-19 2019-01-29 Fuji Electric Co., Ltd. Semiconductor device
US10763851B2 (en) 2019-01-04 2020-09-01 Kabushiki Kaisha Toshiba Gate control circuit and transistor drive circuit

Also Published As

Publication number Publication date
JP2011015136A (ja) 2011-01-20

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