JP5526027B2 - 非晶質シリカ質粉末、その製造方法、樹脂組成物、及び半導体封止材 - Google Patents
非晶質シリカ質粉末、その製造方法、樹脂組成物、及び半導体封止材 Download PDFInfo
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- JP5526027B2 JP5526027B2 JP2010517915A JP2010517915A JP5526027B2 JP 5526027 B2 JP5526027 B2 JP 5526027B2 JP 2010517915 A JP2010517915 A JP 2010517915A JP 2010517915 A JP2010517915 A JP 2010517915A JP 5526027 B2 JP5526027 B2 JP 5526027B2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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Description
平均粒子径の異なる種々の原料シリカ質粉末(珪石粉末)を準備し、種々の種類及び量のAl源物質を添加して混合した後に、特開平11−57451号公報に記載された装置に、2本バーナーを配置させた装置を用いて、一方のバーナーからは平均粒子径が10〜72μmの原料シリカ質粉末(原料1)、もう一方のバーナーからは平均粒子径が2〜16μmの原料シリカ質粉末(原料2)を噴射し、火炎中で溶融、球状化処理して、種々の非晶質シリカ質粉末を製造した。なお、非晶質シリカ質粉末の15μm以上70μm未満の粒度域のAl含有量、3μm以上15μm未満の粒度域のAl含有量、全粒度域のAl含有量の調整は、各粒度域の原料シリカ質粉末に添加するAl源物質の量、種々の平均粒子径の原料シリカ質粉末の火炎への供給量を調整することによって行った。また、非晶質シリカ質粉末の平均粒子径及び粒度分布の調整は、それぞれの原料シリカ質粉末の平均粒子径、火炎への供給量を調整することによって、平均球形度、非晶質率は原料シリカ質粉末の火炎への供給量や火炎温度などによって行った。なお、火炎の形成には、LPG、酸素ガスを用い、原料粉末をバーナーまで搬送するキャリアガスにも酸素ガスを使用した。それらの条件と、得られた非晶質シリカ質粉末の特性を表1〜6に示す。
上記で得られた半導体封止材の粘度特性を次のようにして測定した。キュラストメーター(例えばJSRトレーディング社製商品名「キュラストメーター モデル3P−S型」)を用い、半導体封止材を110℃に加熱した際の30秒後のトルクを粘度指数とした。この値が小さいほど、粘度特性が良好であることを示す。
上記で得られた半導体封止材の成形性をつぎのようにして測定した。BGA用基板に、ダイアタッチフィルムを介して、サイズ8mm×8mm×0.3mmの模擬半導体素子を2枚重ね、金ワイヤーで接続した後、各半導体封止材を使用し、トランスファー成形機を用いて、パッケージサイズ38mm×38mm×1.0mmに成形後、175℃で8時間養生して、BGA型半導体を作製した。半導体の金ワイヤーの部分を軟X線透過装置で観察し、金ワイヤー変形率を測定した。金ワイヤー変形率は、封止前のワイヤー最短距離Xおよび、封止後のワイヤーの最大変位量Yを測定し、(Y/X)×100(%)として求めた。この値は12本の金ワイヤー変形率の平均値とした。なお、金ワイヤーの径は直径30μm、平均長さは5mmである。トランスファー成形条件は、金型温度175℃、成形圧力7.4MPa、保圧時間90秒とした。この値が小さいほど、ワイヤー変形量が小さく、成形性が良好であることを示す。
EMMI−I−66(Epoxy Molding Material Institute;Society of Plastic Industry)に準拠したスパイラルフロー測定用金型を取り付けたトランスファー成形機を用い、各半導体封止材のスパイラルフロー値を測定した。なお、トランスファー成形条件は、金型温度175℃、成形圧力7.4MPa、保圧時間120秒とした。この値が大きいほど、流動性が良好であることを示す。
Claims (6)
- 15μm以上70μm未満の粒度域のAl含有量(A)が酸化物換算で100〜30000ppm、3μm以上15μm未満の粒度域のAl含有量(B)が酸化物換算で100〜7000ppmであり、比(A)/(B)が1.0〜20である、全粒度域のAl含有量が酸化物換算で100〜25000ppmである、Si及びAlの酸化物換算の含有率が99.5質量%以上の非晶質シリカ質粉末。
- 頻度粒度分布において少なくとも二つの山を持つ多峰性の粒度分布を有し、第一の山の極大値が15〜70μmの粒度域内、第二の山の極大値が3〜10μmの粒度域内にあり、平均粒子径が5〜50μmである請求項1に記載の非晶質シリカ質粉末。
- 可燃ガスと助燃ガスとによって形成された高温火炎中に、Al源物質を含む原料シリカ質粉末を噴射して製造する非晶質シリカ質粉末の製造方法であって、Al源物質のAl含有量が酸化物換算で100〜30000ppmである平均粒子径が15〜70μmの原料シリカ質粉末と、Al源物質のAl含有量が酸化物換算で100〜7000ppmである平均粒子径が3〜10μmの原料シリカ質粉末を別々のバーナーから噴射する請求項1又は2に記載の非晶質シリカ質粉末の製造方法。
- 請求項1又は2に記載の非晶質シリカ質粉末と、樹脂とを含有してなる樹脂組成物。
- 樹脂がエポキシ樹脂である請求項4に記載の樹脂組成物。
- 請求項4又は5に記載の樹脂組成物を用いた半導体封止材。
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JP6305002B2 (ja) * | 2013-10-15 | 2018-04-04 | 新日鉄住金マテリアルズ株式会社 | 球状シリカ粒子、その製造法およびこれを含有する樹脂組成物 |
JP6305007B2 (ja) * | 2013-10-18 | 2018-04-04 | 新日鉄住金マテリアルズ株式会社 | 球状非晶質シリカ粒子、その製造方法およびこれを含有する樹脂組成物 |
JP6612919B2 (ja) * | 2018-04-13 | 2019-11-27 | デンカ株式会社 | 非晶質シリカ粉末、樹脂組成物、及び半導体封止材 |
JP7008004B2 (ja) * | 2018-09-20 | 2022-02-10 | 太平洋セメント株式会社 | 無機酸化物中空粒子及びその製造方法 |
CN113583390A (zh) * | 2021-09-08 | 2021-11-02 | 深圳先进电子材料国际创新研究院 | 一种环氧基封装材料增韧改性的方法 |
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JP4742435B2 (ja) | 2001-03-28 | 2011-08-10 | 住友ベークライト株式会社 | エポキシ樹脂組成物及び半導体装置 |
JP2006225630A (ja) | 2005-01-20 | 2006-08-31 | Sumitomo Bakelite Co Ltd | エポキシ樹脂組成物、その潜伏化手法および半導体装置 |
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JP2007262385A (ja) | 2006-03-02 | 2007-10-11 | Hitachi Chem Co Ltd | 封止用エポキシ樹脂組成物及び電子部品装置 |
EP2025644B1 (en) * | 2006-05-12 | 2013-10-23 | Denki Kagaku Kogyo Kabushiki Kaisha | Ceramic powder and method of using the same |
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JPH02227451A (ja) * | 1989-02-28 | 1990-09-10 | Denki Kagaku Kogyo Kk | 樹脂用充填材及び液状エポキシ樹脂組成物 |
JP2004059343A (ja) * | 2002-07-25 | 2004-02-26 | Denki Kagaku Kogyo Kk | 無機質粉末およびこれを充填した樹脂組成物 |
JP2005239892A (ja) * | 2004-02-26 | 2005-09-08 | Nitto Denko Corp | 半導体封止用樹脂組成物およびそれを用いた半導体装置 |
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WO2007132771A1 (ja) * | 2006-05-12 | 2007-11-22 | Denki Kagaku Kogyo Kabushiki Kaisha | セラミックス粉末及びその用途 |
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US8592504B2 (en) | 2013-11-26 |
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