JP5522887B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP5522887B2
JP5522887B2 JP2007088653A JP2007088653A JP5522887B2 JP 5522887 B2 JP5522887 B2 JP 5522887B2 JP 2007088653 A JP2007088653 A JP 2007088653A JP 2007088653 A JP2007088653 A JP 2007088653A JP 5522887 B2 JP5522887 B2 JP 5522887B2
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JP
Japan
Prior art keywords
processing
gas
microwave
plasma
dielectric window
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JP2007088653A
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English (en)
Japanese (ja)
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JP2008251674A (ja
JP2008251674A5 (enExample
Inventor
征英 岩▲崎▼
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to JP2007088653A priority Critical patent/JP5522887B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to PCT/JP2008/056744 priority patent/WO2008123605A1/en
Priority to KR1020097022751A priority patent/KR101119627B1/ko
Priority to KR1020127003140A priority patent/KR101333112B1/ko
Priority to CN2008800105627A priority patent/CN101647101B/zh
Priority to TW097111557A priority patent/TWI386997B/zh
Priority to US12/531,510 priority patent/US20100101728A1/en
Priority to KR1020117016076A priority patent/KR101173268B1/ko
Publication of JP2008251674A publication Critical patent/JP2008251674A/ja
Publication of JP2008251674A5 publication Critical patent/JP2008251674A5/ja
Priority to US14/257,040 priority patent/US9887068B2/en
Application granted granted Critical
Publication of JP5522887B2 publication Critical patent/JP5522887B2/ja
Priority to US15/844,736 priority patent/US10734197B2/en
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Anticipated expiration legal-status Critical

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  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2007088653A 2007-03-29 2007-03-29 プラズマ処理装置 Active JP5522887B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2007088653A JP5522887B2 (ja) 2007-03-29 2007-03-29 プラズマ処理装置
KR1020117016076A KR101173268B1 (ko) 2007-03-29 2008-03-28 플라즈마 처리 장치
KR1020127003140A KR101333112B1 (ko) 2007-03-29 2008-03-28 플라즈마 처리 장치
CN2008800105627A CN101647101B (zh) 2007-03-29 2008-03-28 等离子加工设备
TW097111557A TWI386997B (zh) 2007-03-29 2008-03-28 電漿處理裝置
US12/531,510 US20100101728A1 (en) 2007-03-29 2008-03-28 Plasma process apparatus
PCT/JP2008/056744 WO2008123605A1 (en) 2007-03-29 2008-03-28 Plasma process apparatus
KR1020097022751A KR101119627B1 (ko) 2007-03-29 2008-03-28 플라즈마 처리 장치
US14/257,040 US9887068B2 (en) 2007-03-29 2014-04-21 Plasma process apparatus
US15/844,736 US10734197B2 (en) 2007-03-29 2017-12-18 Plasma process apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007088653A JP5522887B2 (ja) 2007-03-29 2007-03-29 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2008251674A JP2008251674A (ja) 2008-10-16
JP2008251674A5 JP2008251674A5 (enExample) 2010-05-13
JP5522887B2 true JP5522887B2 (ja) 2014-06-18

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ID=39976311

Family Applications (1)

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JP2007088653A Active JP5522887B2 (ja) 2007-03-29 2007-03-29 プラズマ処理装置

Country Status (1)

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JP (1) JP5522887B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI381776B (zh) * 2008-12-03 2013-01-01 Creating Nano Technologies Inc 電漿放電裝置
WO2011004816A1 (ja) * 2009-07-10 2011-01-13 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及び誘電体板
KR101594310B1 (ko) * 2010-11-22 2016-02-26 (주)뉴젠텍 원격 플라즈마 소스 블록
JP6144902B2 (ja) * 2012-12-10 2017-06-07 東京エレクトロン株式会社 マイクロ波放射アンテナ、マイクロ波プラズマ源およびプラズマ処理装置
JP6410622B2 (ja) * 2014-03-11 2018-10-24 東京エレクトロン株式会社 プラズマ処理装置及び成膜方法
JP6914149B2 (ja) * 2017-09-07 2021-08-04 東京エレクトロン株式会社 プラズマ処理装置
JP7104973B2 (ja) * 2018-10-29 2022-07-22 スピードファム株式会社 局所ドライエッチング装置
JP7450475B2 (ja) * 2020-06-30 2024-03-15 東京エレクトロン株式会社 プラズマ処理装置
JP2022119578A (ja) * 2021-02-04 2022-08-17 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999049705A1 (en) * 1998-03-20 1999-09-30 Tokyo Electron Limited Plasma processing apparatus
JP4187386B2 (ja) * 1999-06-18 2008-11-26 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP3957135B2 (ja) * 2000-10-13 2007-08-15 東京エレクトロン株式会社 プラズマ処理装置
JP4338355B2 (ja) * 2002-05-10 2009-10-07 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
JP2008251674A (ja) 2008-10-16

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