JP5521611B2 - 光装置および光機器 - Google Patents

光装置および光機器 Download PDF

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Publication number
JP5521611B2
JP5521611B2 JP2010030220A JP2010030220A JP5521611B2 JP 5521611 B2 JP5521611 B2 JP 5521611B2 JP 2010030220 A JP2010030220 A JP 2010030220A JP 2010030220 A JP2010030220 A JP 2010030220A JP 5521611 B2 JP5521611 B2 JP 5521611B2
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JP
Japan
Prior art keywords
semiconductor laser
light emitting
layer
emitting region
region
Prior art date
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Expired - Fee Related
Application number
JP2010030220A
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English (en)
Japanese (ja)
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JP2011166068A (ja
JP2011166068A5 (https=
Inventor
紀之 伴野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2010030220A priority Critical patent/JP5521611B2/ja
Priority to US12/929,274 priority patent/US20110200064A1/en
Priority to CN2011100385871A priority patent/CN102163798A/zh
Publication of JP2011166068A publication Critical patent/JP2011166068A/ja
Publication of JP2011166068A5 publication Critical patent/JP2011166068A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0236—Fixing laser chips on mounts using an adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2010030220A 2010-02-15 2010-02-15 光装置および光機器 Expired - Fee Related JP5521611B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010030220A JP5521611B2 (ja) 2010-02-15 2010-02-15 光装置および光機器
US12/929,274 US20110200064A1 (en) 2010-02-15 2011-01-12 Optical device and optical apparatus
CN2011100385871A CN102163798A (zh) 2010-02-15 2011-02-15 光学装置及光学设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010030220A JP5521611B2 (ja) 2010-02-15 2010-02-15 光装置および光機器

Publications (3)

Publication Number Publication Date
JP2011166068A JP2011166068A (ja) 2011-08-25
JP2011166068A5 JP2011166068A5 (https=) 2013-03-14
JP5521611B2 true JP5521611B2 (ja) 2014-06-18

Family

ID=44369610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010030220A Expired - Fee Related JP5521611B2 (ja) 2010-02-15 2010-02-15 光装置および光機器

Country Status (3)

Country Link
US (1) US20110200064A1 (https=)
JP (1) JP5521611B2 (https=)
CN (1) CN102163798A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102957094B (zh) * 2011-08-22 2014-11-26 山东浪潮华光光电子有限公司 一种全固态三基色激光器芯片及其制作方法
CN105224113B (zh) * 2014-05-30 2019-03-08 长鸿光电(厦门)有限公司 触控装置及其制造方法
WO2017183300A1 (ja) * 2016-04-19 2017-10-26 パナソニックＩｐマネジメント株式会社 半導体レーザ装置及びその製造方法
JP6627651B2 (ja) * 2016-06-09 2020-01-08 三菱電機株式会社 レーザ素子、レーザ素子の製造方法
DE102017119664A1 (de) 2017-08-28 2019-02-28 Osram Opto Semiconductors Gmbh Kantenemittierender Laserbarren
DE102017130594A1 (de) 2017-12-19 2019-06-19 Osram Opto Semiconductors Gmbh Halbleiterlaser, betriebsverfahren für einen halbleiterlaser und methode zur bestimmung des optimalen füllfaktors eines halbleiterlasers
JPWO2022202342A1 (https=) * 2021-03-23 2022-09-29
WO2023153476A1 (ja) * 2022-02-10 2023-08-17 京セラ株式会社 発光デバイスの製造方法および製造装置並びにレーザ素子基板
DE112023004488T5 (de) * 2022-10-20 2025-08-07 Nichia Corporation Lichtemittierende vorrichtung
DE102023114794A1 (de) * 2023-06-06 2024-12-12 Ams-Osram International Gmbh Laserpackage und verfahren zum herstellen eines solchen

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3461632B2 (ja) * 1995-08-28 2003-10-27 三菱電機株式会社 半導体レーザ装置
TW449937B (en) * 1999-02-26 2001-08-11 Matsushita Electronics Corp Semiconductor device and the manufacturing method thereof
JP3486900B2 (ja) * 2000-02-15 2004-01-13 ソニー株式会社 発光装置およびそれを用いた光装置
JP2002314184A (ja) * 2001-04-11 2002-10-25 Nec Corp 光半導体モジュール
JP2004207480A (ja) * 2002-12-25 2004-07-22 Pioneer Electronic Corp 半導体レーザ装置及びその製造方法
JP4466503B2 (ja) * 2005-08-08 2010-05-26 ソニー株式会社 半導体レーザ
US7792173B2 (en) * 2007-12-06 2010-09-07 Opnext Japan, Inc. Semiconductor laser device

Also Published As

Publication number Publication date
US20110200064A1 (en) 2011-08-18
CN102163798A (zh) 2011-08-24
JP2011166068A (ja) 2011-08-25

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