CN102163798A - 光学装置及光学设备 - Google Patents

光学装置及光学设备 Download PDF

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Publication number
CN102163798A
CN102163798A CN2011100385871A CN201110038587A CN102163798A CN 102163798 A CN102163798 A CN 102163798A CN 2011100385871 A CN2011100385871 A CN 2011100385871A CN 201110038587 A CN201110038587 A CN 201110038587A CN 102163798 A CN102163798 A CN 102163798A
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CN
China
Prior art keywords
light
zone
layer
emitting zone
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011100385871A
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English (en)
Chinese (zh)
Inventor
伴野纪之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN102163798A publication Critical patent/CN102163798A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0236—Fixing laser chips on mounts using an adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CN2011100385871A 2010-02-15 2011-02-15 光学装置及光学设备 Pending CN102163798A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP030220/10 2010-02-15
JP2010030220A JP5521611B2 (ja) 2010-02-15 2010-02-15 光装置および光機器

Publications (1)

Publication Number Publication Date
CN102163798A true CN102163798A (zh) 2011-08-24

Family

ID=44369610

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011100385871A Pending CN102163798A (zh) 2010-02-15 2011-02-15 光学装置及光学设备

Country Status (3)

Country Link
US (1) US20110200064A1 (https=)
JP (1) JP5521611B2 (https=)
CN (1) CN102163798A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107492787A (zh) * 2016-06-09 2017-12-19 三菱电机株式会社 激光器元件、激光器元件的制造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102957094B (zh) * 2011-08-22 2014-11-26 山东浪潮华光光电子有限公司 一种全固态三基色激光器芯片及其制作方法
CN105224113B (zh) * 2014-05-30 2019-03-08 长鸿光电(厦门)有限公司 触控装置及其制造方法
WO2017183300A1 (ja) * 2016-04-19 2017-10-26 パナソニックＩｐマネジメント株式会社 半導体レーザ装置及びその製造方法
DE102017119664A1 (de) 2017-08-28 2019-02-28 Osram Opto Semiconductors Gmbh Kantenemittierender Laserbarren
DE102017130594A1 (de) 2017-12-19 2019-06-19 Osram Opto Semiconductors Gmbh Halbleiterlaser, betriebsverfahren für einen halbleiterlaser und methode zur bestimmung des optimalen füllfaktors eines halbleiterlasers
JPWO2022202342A1 (https=) * 2021-03-23 2022-09-29
WO2023153476A1 (ja) * 2022-02-10 2023-08-17 京セラ株式会社 発光デバイスの製造方法および製造装置並びにレーザ素子基板
DE112023004488T5 (de) * 2022-10-20 2025-08-07 Nichia Corporation Lichtemittierende vorrichtung
DE102023114794A1 (de) * 2023-06-06 2024-12-12 Ams-Osram International Gmbh Laserpackage und verfahren zum herstellen eines solchen

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729561A (en) * 1995-08-28 1998-03-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
CN1316810A (zh) * 2000-02-15 2001-10-10 索尼株式会社 发光器件及使用该发光器件的光学装置
US20090147816A1 (en) * 2007-12-06 2009-06-11 Opnext Japan, Inc. Semiconductor laser device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW449937B (en) * 1999-02-26 2001-08-11 Matsushita Electronics Corp Semiconductor device and the manufacturing method thereof
JP2002314184A (ja) * 2001-04-11 2002-10-25 Nec Corp 光半導体モジュール
JP2004207480A (ja) * 2002-12-25 2004-07-22 Pioneer Electronic Corp 半導体レーザ装置及びその製造方法
JP4466503B2 (ja) * 2005-08-08 2010-05-26 ソニー株式会社 半導体レーザ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729561A (en) * 1995-08-28 1998-03-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
CN1316810A (zh) * 2000-02-15 2001-10-10 索尼株式会社 发光器件及使用该发光器件的光学装置
US20090147816A1 (en) * 2007-12-06 2009-06-11 Opnext Japan, Inc. Semiconductor laser device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107492787A (zh) * 2016-06-09 2017-12-19 三菱电机株式会社 激光器元件、激光器元件的制造方法
CN107492787B (zh) * 2016-06-09 2019-11-15 三菱电机株式会社 激光器元件、激光器元件的制造方法

Also Published As

Publication number Publication date
US20110200064A1 (en) 2011-08-18
JP5521611B2 (ja) 2014-06-18
JP2011166068A (ja) 2011-08-25

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Application publication date: 20110824