JP5514559B2 - 配線基板及びその製造方法並びに半導体パッケージ - Google Patents

配線基板及びその製造方法並びに半導体パッケージ Download PDF

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Publication number
JP5514559B2
JP5514559B2 JP2010004394A JP2010004394A JP5514559B2 JP 5514559 B2 JP5514559 B2 JP 5514559B2 JP 2010004394 A JP2010004394 A JP 2010004394A JP 2010004394 A JP2010004394 A JP 2010004394A JP 5514559 B2 JP5514559 B2 JP 5514559B2
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Japan
Prior art keywords
substrate
layer
wiring
ceramic
electrode
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Active
Application number
JP2010004394A
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English (en)
Japanese (ja)
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JP2011146445A5 (https=
JP2011146445A (ja
Inventor
直 荒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2010004394A priority Critical patent/JP5514559B2/ja
Priority to US12/987,398 priority patent/US8686548B2/en
Publication of JP2011146445A publication Critical patent/JP2011146445A/ja
Publication of JP2011146445A5 publication Critical patent/JP2011146445A5/ja
Application granted granted Critical
Publication of JP5514559B2 publication Critical patent/JP5514559B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H10W70/686—Shapes or dispositions thereof comprising multiple insulating layers the multiple insulating layers having different compositions, e.g. polymer layer on glass substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H10W70/687—Shapes or dispositions thereof comprising multiple insulating layers characterized by the outer layers being for protection, e.g. solder masks, or for protection against chemical or mechanical damage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/698—Semiconductor materials that are electrically insulating, e.g. undoped silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/654—Top-view layouts
    • H10W70/655—Fan-out layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2010004394A 2010-01-12 2010-01-12 配線基板及びその製造方法並びに半導体パッケージ Active JP5514559B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010004394A JP5514559B2 (ja) 2010-01-12 2010-01-12 配線基板及びその製造方法並びに半導体パッケージ
US12/987,398 US8686548B2 (en) 2010-01-12 2011-01-10 Wiring substrate, method for manufacturing wiring substrate, and semiconductor package including wiring substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010004394A JP5514559B2 (ja) 2010-01-12 2010-01-12 配線基板及びその製造方法並びに半導体パッケージ

Publications (3)

Publication Number Publication Date
JP2011146445A JP2011146445A (ja) 2011-07-28
JP2011146445A5 JP2011146445A5 (https=) 2013-02-21
JP5514559B2 true JP5514559B2 (ja) 2014-06-04

Family

ID=44257896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010004394A Active JP5514559B2 (ja) 2010-01-12 2010-01-12 配線基板及びその製造方法並びに半導体パッケージ

Country Status (2)

Country Link
US (1) US8686548B2 (https=)
JP (1) JP5514559B2 (https=)

Families Citing this family (15)

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US8501587B2 (en) * 2009-01-13 2013-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked integrated chips and methods of fabrication thereof
US8780576B2 (en) 2011-09-14 2014-07-15 Invensas Corporation Low CTE interposer
US8912045B2 (en) * 2012-06-12 2014-12-16 International Business Machines Corporation Three dimensional flip chip system and method
US8927345B2 (en) * 2012-07-09 2015-01-06 Freescale Semiconductor, Inc. Device package with rigid interconnect structure connecting die and substrate and method thereof
US9583426B2 (en) 2014-11-05 2017-02-28 Invensas Corporation Multi-layer substrates suitable for interconnection between circuit modules
US9633930B2 (en) * 2014-11-26 2017-04-25 Kookmin University Industry Academy Cooperation Foundation Method of forming through-hole in silicon substrate, method of forming electrical connection element penetrating silicon substrate and semiconductor device manufactured thereby
US9969614B2 (en) 2015-05-29 2018-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS packages and methods of manufacture thereof
US10283492B2 (en) 2015-06-23 2019-05-07 Invensas Corporation Laminated interposers and packages with embedded trace interconnects
KR102439483B1 (ko) * 2015-10-08 2022-09-02 삼성전기주식회사 인쇄회로기판 및 그 제조방법
US9852994B2 (en) 2015-12-14 2017-12-26 Invensas Corporation Embedded vialess bridges
US9953911B2 (en) * 2016-07-01 2018-04-24 Taiwan Semiconductor Manufacturing Company, Ltd. Fan-out package structure and method
TWI800487B (zh) 2016-09-09 2023-05-01 日商索尼半導體解決方案公司 固體攝像元件及製造方法、以及電子機器
CN111599687B (zh) * 2019-02-21 2022-11-15 奥特斯科技(重庆)有限公司 具有高刚度的超薄部件承载件及其制造方法
US12205877B2 (en) 2019-02-21 2025-01-21 AT&S(Chongqing) Company Limited Ultra-thin component carrier having high stiffness and method of manufacturing the same
IT201900006736A1 (it) * 2019-05-10 2020-11-10 Applied Materials Inc Procedimenti di fabbricazione di package

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
KR100337658B1 (ko) * 1997-04-03 2002-05-24 사토 요시하루 회로 기판 및 검출기 그리고 이의 제조 방법
US6617681B1 (en) 1999-06-28 2003-09-09 Intel Corporation Interposer and method of making same
DE10010461A1 (de) * 2000-03-03 2001-09-13 Infineon Technologies Ag Vorrichtung zum Verpacken elektronischer Bauteile mittels Spritzgußtechnik
JP2002299486A (ja) 2001-03-29 2002-10-11 Kyocera Corp 光半導体素子収納用パッケージ
US6791133B2 (en) 2002-07-19 2004-09-14 International Business Machines Corporation Interposer capacitor built on silicon wafer and joined to a ceramic substrate
JP4295682B2 (ja) 2004-06-28 2009-07-15 Ｔｄｋ株式会社 多層配線基板
US7221050B2 (en) * 2004-09-02 2007-05-22 Intel Corporation Substrate having a functionally gradient coefficient of thermal expansion
JP2007123371A (ja) 2005-10-26 2007-05-17 Kyocera Corp 多数個取り電子装置およびその製造方法
JP4738228B2 (ja) 2006-03-28 2011-08-03 富士通株式会社 半導体装置及び半導体装置の製造方法
JP2008160019A (ja) 2006-12-26 2008-07-10 Shinko Electric Ind Co Ltd 電子部品
US20080284037A1 (en) * 2007-05-15 2008-11-20 Andry Paul S Apparatus and Methods for Constructing Semiconductor Chip Packages with Silicon Space Transformer Carriers
US8455766B2 (en) * 2007-08-08 2013-06-04 Ibiden Co., Ltd. Substrate with low-elasticity layer and low-thermal-expansion layer
US7936060B2 (en) * 2009-04-29 2011-05-03 International Business Machines Corporation Reworkable electronic device assembly and method

Also Published As

Publication number Publication date
US8686548B2 (en) 2014-04-01
JP2011146445A (ja) 2011-07-28
US20110169133A1 (en) 2011-07-14

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