JP5509724B2 - マルチチップモジュールの製造方法 - Google Patents
マルチチップモジュールの製造方法 Download PDFInfo
- Publication number
- JP5509724B2 JP5509724B2 JP2009191271A JP2009191271A JP5509724B2 JP 5509724 B2 JP5509724 B2 JP 5509724B2 JP 2009191271 A JP2009191271 A JP 2009191271A JP 2009191271 A JP2009191271 A JP 2009191271A JP 5509724 B2 JP5509724 B2 JP 5509724B2
- Authority
- JP
- Japan
- Prior art keywords
- chips
- lsi chips
- lsi
- heat spreader
- multichip module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05647—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73207—Bump and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01083—Bismuth [Bi]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Description
27 ボンディングワイヤ
30A〜30D チップ(LSIチップ)
38 樹脂
40 ハンダバンプ
50 ヒートスプレッダ(平板状部材)
100 マルチチップモジュール
Claims (2)
- 平板状部材の一側の面に、ハンダバンプを介して複数のチップを固定する工程と、
前記平板状部材に固定された前記複数のチップの前記平板状部材とは反対側の面において、複数のチップ間をボンディングワイヤにより接続する工程と、
前記ボンディングワイヤにより接続された前記複数のチップを、前記平板状部材とは反対側の面において基板に電気的に接続する工程と、を含むマルチチップモジュールの製造方法。 - 前記基板を前記複数のチップに対して電気的に接続した後、前記基板と前記複数のチップとの間を樹脂により封止する工程を更に含む請求項1に記載のマルチチップモジュールの製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009191271A JP5509724B2 (ja) | 2009-08-20 | 2009-08-20 | マルチチップモジュールの製造方法 |
DE102010036812A DE102010036812A1 (de) | 2009-08-20 | 2010-08-03 | Mehrchipmodul und Verfahren zu seiner Herstellung |
US12/857,884 US8546187B2 (en) | 2009-08-20 | 2010-08-17 | Electronic part and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009191271A JP5509724B2 (ja) | 2009-08-20 | 2009-08-20 | マルチチップモジュールの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011044557A JP2011044557A (ja) | 2011-03-03 |
JP5509724B2 true JP5509724B2 (ja) | 2014-06-04 |
Family
ID=43495618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009191271A Expired - Fee Related JP5509724B2 (ja) | 2009-08-20 | 2009-08-20 | マルチチップモジュールの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8546187B2 (ja) |
JP (1) | JP5509724B2 (ja) |
DE (1) | DE102010036812A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013145459A1 (ja) * | 2012-03-29 | 2013-10-03 | アイシン・エィ・ダブリュ株式会社 | コイル |
US10692794B2 (en) * | 2016-01-14 | 2020-06-23 | Mitsubishi Electric Corporation | Radiation plate structure, semiconductor device, and method for manufacturing radiation plate structure |
US10304800B2 (en) * | 2017-06-23 | 2019-05-28 | Taiwan Semiconductor Manufacturing Company Ltd. | Packaging with substrates connected by conductive bumps |
US11652060B2 (en) * | 2018-12-28 | 2023-05-16 | Intel Corporation | Die interconnection scheme for providing a high yielding process for high performance microprocessors |
US20220320026A1 (en) * | 2021-03-26 | 2022-10-06 | Qualcomm Incorporated | Package comprising wire bonds coupled to integrated devices |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01127040U (ja) * | 1988-02-25 | 1989-08-30 | ||
JPH05275570A (ja) * | 1992-03-27 | 1993-10-22 | Nippon Steel Corp | 半導体装置 |
JP3318786B2 (ja) | 1993-03-29 | 2002-08-26 | ソニー株式会社 | マルチチップモジュールの構造 |
JP3235452B2 (ja) | 1995-03-20 | 2001-12-04 | 松下電器産業株式会社 | 高周波集積回路装置 |
JPH0964252A (ja) * | 1995-08-25 | 1997-03-07 | Hitachi Ltd | 半導体装置 |
US5796165A (en) | 1996-03-19 | 1998-08-18 | Matsushita Electronics Corporation | High-frequency integrated circuit device having a multilayer structure |
JPH1167963A (ja) | 1997-08-26 | 1999-03-09 | Matsushita Electric Works Ltd | 半導体装置 |
US6525414B2 (en) * | 1997-09-16 | 2003-02-25 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device including a wiring board and semiconductor elements mounted thereon |
JP2870533B1 (ja) | 1997-11-27 | 1999-03-17 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US20020074637A1 (en) * | 2000-12-19 | 2002-06-20 | Intel Corporation | Stacked flip chip assemblies |
JP3839267B2 (ja) * | 2001-03-08 | 2006-11-01 | 株式会社ルネサステクノロジ | 半導体装置及びそれを用いた通信端末装置 |
US7462509B2 (en) * | 2006-05-16 | 2008-12-09 | International Business Machines Corporation | Dual-sided chip attached modules |
US7592691B2 (en) * | 2006-09-01 | 2009-09-22 | Micron Technology, Inc. | High density stacked die assemblies, structures incorporated therein and methods of fabricating the assemblies |
TWI325617B (en) * | 2006-12-18 | 2010-06-01 | Chipmos Technologies Inc | Chip package and method of manufacturing the same |
TWI358816B (en) * | 2008-03-19 | 2012-02-21 | Chipmos Technologies Inc | Chip package structure |
US8008764B2 (en) * | 2008-04-28 | 2011-08-30 | International Business Machines Corporation | Bridges for interconnecting interposers in multi-chip integrated circuits |
US8174103B2 (en) * | 2008-05-01 | 2012-05-08 | International Business Machines Corporation | Enhanced architectural interconnect options enabled with flipped die on a multi-chip package |
TWI501376B (zh) * | 2009-10-07 | 2015-09-21 | Xintec Inc | 晶片封裝體及其製造方法 |
-
2009
- 2009-08-20 JP JP2009191271A patent/JP5509724B2/ja not_active Expired - Fee Related
-
2010
- 2010-08-03 DE DE102010036812A patent/DE102010036812A1/de not_active Withdrawn
- 2010-08-17 US US12/857,884 patent/US8546187B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8546187B2 (en) | 2013-10-01 |
US20110042806A1 (en) | 2011-02-24 |
DE102010036812A1 (de) | 2011-02-24 |
JP2011044557A (ja) | 2011-03-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5635247B2 (ja) | マルチチップモジュール | |
US20210398930A1 (en) | Semiconductor device and manufacturing method thereof | |
TWI496270B (zh) | 半導體封裝件及其製法 | |
EP2555240B1 (en) | Packaging substrate having embedded interposer and fabrication method thereof | |
JP5259095B2 (ja) | 半導体装置 | |
US7989959B1 (en) | Method of forming stacked-die integrated circuit | |
US9230901B2 (en) | Semiconductor device having chip embedded in heat spreader and electrically connected to interposer and method of manufacturing the same | |
US9548220B2 (en) | Method of fabricating semiconductor package having an interposer structure | |
JP2011082293A (ja) | インターポーザ実装配線基板及び電子部品装置 | |
TW201405728A (zh) | 半導體封裝及半導體封裝基座的製造方法 | |
JP2008258621A (ja) | 半導体デバイスパッケージの構造、および半導体デバイスパッケージ構造の形成方法 | |
KR20130075251A (ko) | 복수의 세그먼트로 구성된 인터포저를 포함하는 반도체 패키지 | |
US8811031B2 (en) | Multichip module and method for manufacturing the same | |
JP2008258604A (ja) | 並列構成のマルチチップを有する半導体デバイスパッケージおよびその製造方法 | |
JP5509724B2 (ja) | マルチチップモジュールの製造方法 | |
JP2008210912A (ja) | 半導体装置及びその製造方法 | |
JP5282005B2 (ja) | マルチチップモジュール | |
JP2010074072A (ja) | 半導体装置および半導体装置の製造方法 | |
KR101824727B1 (ko) | 반도체 디바이스의 제조 방법 및 이에 따른 반도체 디바이스 | |
JP2005044989A (ja) | 半導体パッケージ及びその製造方法 | |
KR20210147453A (ko) | 반도체 패키지 및 그 제조 방법 | |
WO2014171403A1 (ja) | 半導体装置 | |
KR101753519B1 (ko) | 반도체 디바이스의 제조 방법 및 이에 따른 반도체 디바이스 | |
JP5297445B2 (ja) | 半導体装置 | |
JP2014078760A (ja) | マルチチップモジュール |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120405 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130131 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130212 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130403 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20131203 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140108 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20140203 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140225 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140310 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5509724 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |