JP5496500B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5496500B2
JP5496500B2 JP2008319214A JP2008319214A JP5496500B2 JP 5496500 B2 JP5496500 B2 JP 5496500B2 JP 2008319214 A JP2008319214 A JP 2008319214A JP 2008319214 A JP2008319214 A JP 2008319214A JP 5496500 B2 JP5496500 B2 JP 5496500B2
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Prior art keywords
film
semiconductor film
microcrystalline semiconductor
thin film
substrate
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Expired - Fee Related
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JP2008319214A
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Japanese (ja)
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JP2009170896A5 (enExample
JP2009170896A (ja
Inventor
徹 高山
健吾 秋元
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008319214A priority Critical patent/JP5496500B2/ja
Publication of JP2009170896A publication Critical patent/JP2009170896A/ja
Publication of JP2009170896A5 publication Critical patent/JP2009170896A5/ja
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  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
JP2008319214A 2007-12-18 2008-12-16 半導体装置の作製方法 Expired - Fee Related JP5496500B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008319214A JP5496500B2 (ja) 2007-12-18 2008-12-16 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007325708 2007-12-18
JP2007325708 2007-12-18
JP2008319214A JP5496500B2 (ja) 2007-12-18 2008-12-16 半導体装置の作製方法

Publications (3)

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JP2009170896A JP2009170896A (ja) 2009-07-30
JP2009170896A5 JP2009170896A5 (enExample) 2012-02-02
JP5496500B2 true JP5496500B2 (ja) 2014-05-21

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JP2008319214A Expired - Fee Related JP5496500B2 (ja) 2007-12-18 2008-12-16 半導体装置の作製方法

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI584251B (zh) 2009-09-10 2017-05-21 半導體能源研究所股份有限公司 半導體裝置和顯示裝置
JP5683179B2 (ja) * 2009-09-24 2015-03-11 株式会社半導体エネルギー研究所 表示装置の作製方法
TWI557910B (zh) * 2011-06-16 2016-11-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR20140071971A (ko) * 2011-10-07 2014-06-12 스미토모덴키고교가부시키가이샤 절연막 및 그 제조 방법
JP6046351B2 (ja) * 2012-01-19 2016-12-14 日新電機株式会社 絶縁膜およびその製造方法
US8969130B2 (en) * 2011-11-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof
CN104409509A (zh) * 2014-10-20 2015-03-11 深圳市华星光电技术有限公司 薄膜晶体管
JP2020531682A (ja) * 2017-08-04 2020-11-05 ザ ガバメント オブ ザ ユナイテッド ステイツ オブ アメリカ， アズ リプレゼンテッド バイ ザ セクレタリー オブ ザ ネイビー プラズマ化学気相成長法によって調製した単層および多層シリセン

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3006190B2 (ja) * 1991-07-26 2000-02-07 株式会社島津製作所 真空成膜方法
JPH10163502A (ja) * 1996-12-03 1998-06-19 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2001077112A (ja) * 1999-07-07 2001-03-23 Matsushita Electric Ind Co Ltd 積層体，積層体の製造方法及び半導体素子
JP2001217424A (ja) * 2000-02-03 2001-08-10 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびそれを用いた液晶表示装置
JP2002319678A (ja) * 2001-04-20 2002-10-31 Hitachi Ltd 薄膜型半導体装置及びその製造方法
JP2005005509A (ja) * 2003-06-12 2005-01-06 Canon Inc 薄膜トランジスタ及びその製造方法
JP2005167051A (ja) * 2003-12-04 2005-06-23 Sony Corp 薄膜トランジスタおよび薄膜トランジスタの製造方法

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