JP5489992B2 - 電界効果トランジスタ・デバイスの製造方法 - Google Patents
電界効果トランジスタ・デバイスの製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 53
- 230000005669 field effect Effects 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 125000006850 spacer group Chemical group 0.000 claims description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 150000004767 nitrides Chemical class 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 23
- 239000000945 filler Substances 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 20
- 238000001020 plasma etching Methods 0.000 claims description 19
- 238000001459 lithography Methods 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 238000011049 filling Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 238000000609 electron-beam lithography Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 22
- 239000011295 pitch Substances 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 13
- 238000001878 scanning electron micrograph Methods 0.000 description 11
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- 238000007254 oxidation reaction Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
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- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002860 competitive effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 1
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- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 239000001301 oxygen Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
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- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0886—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66553—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using inside spacers, permanent or not
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7853—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection
- H01L29/7854—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection with rounded corners
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
- Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region
Description
Claims (13)
- 電界効果トランジスタ・デバイスを製造する方法であって、
基板上にシリコン層を形成するステップと、
前記シリコン層上で複数のフィンを形成するためのフィン・リソグラフィー・ハードマスクをパターニングするステップと、
前記フィン・リソグラフィー・ハードマスクの中央部分の上面及び側面を覆うダミー・ゲート構造を配置するステップと、
前記ダミー・ゲート構造の周りにフィラー層を堆積させるステップと、
前記ダミー・ゲート構造を除去して、前記デバイスのソース領域およびドレイン領域から前記デバイスのフィン領域を区別する、前記フィン・リソグラフィー・ハードマスクの前記中央部分の上を中心とするトレンチを、前記フィラー層に形成するステップと、
前記フィン領域内の前記フィン・リソグラフィー・ハードマスクを使用して、前記シリコン層をエッチングして複数のフィンを形成するステップと、
前記トレンチをゲート材料で充填して、前記フィンの上にゲート・スタックを形成するステップと、
前記フィラー層を除去して、前記デバイスの前記ソース領域および前記ドレイン領域を露出するステップとを順次実行することを含み、
前記ソース領域および前記ドレイン領域は無傷であって前記ゲート・スタックと自己整合させられている、方法。 - 前記トレンチを前記ゲート材料で充填して前記ゲート・スタックを形成するステップの前に、前記フィン領域から前記フィン・リソグラフィー・ハードマスクを除去するステップをさらに含む、請求項1に記載の方法。
- 前記トレンチの1つまたはそれ以上の側壁と前記フィンの1つまたはそれ以上の表面との少なくとも一部分の上で前記トレンチ内に窒化物スペーサ材料を堆積させるステップと、
50パーセントと80パーセントとの間の時限オーバー・エッチングを伴う、反応イオン・エッチングを使用して、前記フィンの前記表面から前記スペーサ材料を選択的に除去するステップと、をさらに含む、請求項1または2に記載の方法。 - 前記フィンの表面と比べて前記トレンチの側壁の上により多くのゲート誘電体材料を設けるために差分誘電体成長を用いて前記トレンチの前記側壁のうちの1つまたはそれ以上と前記フィンの1つまたはそれ以上の前記表面との少なくとも一部分の上に前記ゲート誘電体材料を設けるステップをさらに含む、請求項1乃至3のいずれかに記載の方法。
- 前記ゲート・スタックはフレア形部分を有し、
前記ゲートから前記フレア形部分を除去するステップをさらに含む、請求項1乃至4のいずれかに記載の方法。 - 前記ダミー・ゲート構造は多結晶シリコンを含み、
100ナノメートルと150ナノメートルの間の高さと、30ナノメートルと50ナノメートルの間の長さとを有する、請求項1乃至5のいずれかに記載の方法。 - 前記ゲート・スタックは多結晶シリコン、金属および金属/多結晶シリコン・ハイブリッドのうちの1つまたはそれ以上を含む、請求項1乃至6のいずれかに記載の方法。
- 前記フィン・リソグラフィー・ハードマスクは、窒化物フィン・ハードマスク層と酸化物フィン・ハードマスク層とを含む二重ハードマスク構造である、請求項1乃至7のいずれかに記載の方法。
- 前記フィンはシリコン選択的反応イオン・エッチングを用いてエッチングされる、請求項1乃至8のいずれかに記載の方法。
- 前記ゲート・スタックはダマシン・プロセスを用いて前記トレンチ内に形成される、請求項1乃至9のいずれかに記載の方法。
- 前記フィン・リソグラフィー・ハードマスクをパターニングする前記ステップは、
電子線リソグラフィーを用いてレジスト材料スタックをパターニングするステップと、
前記レジスト材料スタックのパターンを炭素ベースのレジストに転写するステップと、
反応イオン・エッチングによって前記転写後の炭素ベースのレジストを用いて前記フィン・リソグラフィー・ハードマスクをパターニングするステップと、をさらに含む、請求項1乃至10のいずれかに記載の方法。 - ホウ素およびリンのうちの1つまたはそれ以上を含むドーピング材で前記ゲート・スタックをドープするステップをさらに含む、請求項1乃至11のいずれかに記載の方法。
- 前記ソース領域および前記ドレイン領域のうちの1つまたはそれ以上の上にシリサイド領域を形成するステップをさらに含む、請求項1乃至12のいずれかに記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/765,931 US7923337B2 (en) | 2007-06-20 | 2007-06-20 | Fin field effect transistor devices with self-aligned source and drain regions |
US11/765,931 | 2007-06-20 | ||
PCT/EP2008/056733 WO2008155208A1 (en) | 2007-06-20 | 2008-06-02 | Fin field effect transistor devices with self-aligned source and drain regions |
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JP2010530623A JP2010530623A (ja) | 2010-09-09 |
JP5489992B2 true JP5489992B2 (ja) | 2014-05-14 |
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JP2010512624A Active JP5489992B2 (ja) | 2007-06-20 | 2008-06-02 | 電界効果トランジスタ・デバイスの製造方法 |
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US (3) | US7923337B2 (ja) |
EP (1) | EP2168151A1 (ja) |
JP (1) | JP5489992B2 (ja) |
KR (2) | KR20120079487A (ja) |
TW (1) | TW200908160A (ja) |
WO (1) | WO2008155208A1 (ja) |
Cited By (1)
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US9768255B2 (en) | 2015-04-14 | 2017-09-19 | Samsung Electronics Co., Ltd. | Semiconductor devices including contact structures that partially overlap silicide layers |
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FR2707170A1 (fr) * | 1993-06-04 | 1995-01-13 | Pasteur Institut | Expression des récepteurs CD4 et CD26 dans des cellules recombinantes, inhibiteurs du récepteur CD26. |
US7908578B2 (en) | 2007-08-02 | 2011-03-15 | Tela Innovations, Inc. | Methods for designing semiconductor device with dynamic array section |
US8225261B2 (en) | 2006-03-09 | 2012-07-17 | Tela Innovations, Inc. | Methods for defining contact grid in dynamic array architecture |
US8245180B2 (en) | 2006-03-09 | 2012-08-14 | Tela Innovations, Inc. | Methods for defining and using co-optimized nanopatterns for integrated circuit design and apparatus implementing same |
US9009641B2 (en) | 2006-03-09 | 2015-04-14 | Tela Innovations, Inc. | Circuits with linear finfet structures |
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JP2010530623A (ja) | 2010-09-09 |
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TW200908160A (en) | 2009-02-16 |
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