JP5489705B2 - 固体撮像装置および撮像システム - Google Patents

固体撮像装置および撮像システム Download PDF

Info

Publication number
JP5489705B2
JP5489705B2 JP2009296522A JP2009296522A JP5489705B2 JP 5489705 B2 JP5489705 B2 JP 5489705B2 JP 2009296522 A JP2009296522 A JP 2009296522A JP 2009296522 A JP2009296522 A JP 2009296522A JP 5489705 B2 JP5489705 B2 JP 5489705B2
Authority
JP
Japan
Prior art keywords
substrate
solid
imaging device
state imaging
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009296522A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011138841A (ja
JP2011138841A5 (enExample
Inventor
信之 遠藤
哲也 板野
和男 山崎
杏平 渡辺
武史 市川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2009296522A priority Critical patent/JP5489705B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority to CN201080058034.6A priority patent/CN102714212B/zh
Priority to EP10807492.3A priority patent/EP2517248B1/en
Priority to US13/517,357 priority patent/US8912578B2/en
Priority to PCT/JP2010/007414 priority patent/WO2011077709A1/en
Publication of JP2011138841A publication Critical patent/JP2011138841A/ja
Publication of JP2011138841A5 publication Critical patent/JP2011138841A5/ja
Application granted granted Critical
Publication of JP5489705B2 publication Critical patent/JP5489705B2/ja
Priority to US14/543,237 priority patent/US9385152B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1843—Infrared image sensors of the hybrid type

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP2009296522A 2009-12-26 2009-12-26 固体撮像装置および撮像システム Active JP5489705B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009296522A JP5489705B2 (ja) 2009-12-26 2009-12-26 固体撮像装置および撮像システム
EP10807492.3A EP2517248B1 (en) 2009-12-26 2010-12-22 Solid-state image pickup device and image pickup system
US13/517,357 US8912578B2 (en) 2009-12-26 2010-12-22 Solid-state image pickup device and image pickup system
PCT/JP2010/007414 WO2011077709A1 (en) 2009-12-26 2010-12-22 Solid-state image pickup device and image pickup system
CN201080058034.6A CN102714212B (zh) 2009-12-26 2010-12-22 固态图像拾取装置和图像拾取系统
US14/543,237 US9385152B2 (en) 2009-12-26 2014-11-17 Solid-state image pickup device and image pickup system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009296522A JP5489705B2 (ja) 2009-12-26 2009-12-26 固体撮像装置および撮像システム

Publications (3)

Publication Number Publication Date
JP2011138841A JP2011138841A (ja) 2011-07-14
JP2011138841A5 JP2011138841A5 (enExample) 2013-02-21
JP5489705B2 true JP5489705B2 (ja) 2014-05-14

Family

ID=43650059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009296522A Active JP5489705B2 (ja) 2009-12-26 2009-12-26 固体撮像装置および撮像システム

Country Status (5)

Country Link
US (2) US8912578B2 (enExample)
EP (1) EP2517248B1 (enExample)
JP (1) JP5489705B2 (enExample)
CN (1) CN102714212B (enExample)
WO (1) WO2011077709A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10608034B2 (en) 2009-12-26 2020-03-31 Canon Kabushiki Kaisha Solid-state image pickup apparatus and image pickup system

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011009645A (ja) * 2009-06-29 2011-01-13 Toshiba Corp 半導体装置及びその製造方法
JP2012015274A (ja) * 2010-06-30 2012-01-19 Canon Inc 固体撮像装置、及び固体撮像装置の製造方法。
JP2012124318A (ja) * 2010-12-08 2012-06-28 Sony Corp 固体撮像素子の製造方法、固体撮像素子、および電子機器
US9153490B2 (en) * 2011-07-19 2015-10-06 Sony Corporation Solid-state imaging device, manufacturing method of solid-state imaging device, manufacturing method of semiconductor device, semiconductor device, and electronic device
JP2013077711A (ja) 2011-09-30 2013-04-25 Sony Corp 半導体装置および半導体装置の製造方法
JP5981711B2 (ja) 2011-12-16 2016-08-31 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP5970826B2 (ja) * 2012-01-18 2016-08-17 ソニー株式会社 半導体装置、半導体装置の製造方法、固体撮像装置および電子機器
JP6128787B2 (ja) 2012-09-28 2017-05-17 キヤノン株式会社 半導体装置
JP2014099582A (ja) 2012-10-18 2014-05-29 Sony Corp 固体撮像装置
CN107359172B (zh) * 2013-01-16 2021-01-19 索尼半导体解决方案公司 摄像装置
JP2014199898A (ja) * 2013-03-11 2014-10-23 ソニー株式会社 固体撮像素子および製造方法、並びに、電子機器
JP2015041677A (ja) * 2013-08-21 2015-03-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6217458B2 (ja) * 2014-03-03 2017-10-25 ソニー株式会社 半導体装置およびその製造方法、並びに電子機器
JP6215246B2 (ja) * 2014-05-16 2017-10-18 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像素子の製造方法、並びに電子機器
JP2016151523A (ja) * 2015-02-18 2016-08-22 浜松ホトニクス株式会社 赤外線検出装置
US12087629B2 (en) * 2015-05-18 2024-09-10 Adeia Semiconductor Technologies Llc Through-dielectric-vias (TDVs) for 3D integrated circuits in silicon
US9978791B2 (en) * 2015-07-31 2018-05-22 Taiwan Semiconductor Manufacturing Co., Ltd Image sensor and method for manufacturing the same
JP2017204510A (ja) * 2016-05-09 2017-11-16 キヤノン株式会社 光電変換装置の製造方法
CN109478578B (zh) * 2016-07-27 2022-01-25 浜松光子学株式会社 光检测装置
FR3059143B1 (fr) 2016-11-24 2019-05-31 Stmicroelectronics (Crolles 2) Sas Puce de capteur d'image
US10431614B2 (en) * 2017-02-01 2019-10-01 Semiconductor Components Industries, Llc Edge seals for semiconductor packages
US9929203B1 (en) * 2017-04-27 2018-03-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for fabricating thereof
JP7038494B2 (ja) * 2017-06-15 2022-03-18 ルネサスエレクトロニクス株式会社 固体撮像素子
US10825854B2 (en) * 2017-08-16 2020-11-03 Facebook Technologies, Llc Stacked photo sensor assembly with pixel level interconnect
US10522580B2 (en) * 2017-08-23 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of light-sensing device
JP2017216480A (ja) * 2017-09-01 2017-12-07 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US11902696B2 (en) * 2017-10-03 2024-02-13 Sony Semiconductor Solutions Corporation Infrared imaging device including drive and signal lines configured to electrically connect first and second substrates
JP6954337B2 (ja) * 2017-11-10 2021-10-27 株式会社ニコン 撮像装置及びカメラ
TWI886830B (zh) * 2018-10-17 2025-06-11 日商索尼半導體解決方案公司 攝像元件及電子機器
US11079282B2 (en) * 2018-11-28 2021-08-03 Semiconductor Components Industries, Llc Flexible interconnect sensing devices and related methods
WO2020262559A1 (ja) * 2019-06-26 2020-12-30 ソニーセミコンダクタソリューションズ株式会社 撮像装置
TWI867000B (zh) * 2019-06-26 2024-12-21 日商索尼半導體解決方案公司 攝像裝置
TWI888385B (zh) * 2019-06-26 2025-07-01 日商索尼半導體解決方案公司 攝像裝置
TWI861140B (zh) * 2019-06-26 2024-11-11 日商索尼半導體解決方案公司 攝像裝置
WO2021026865A1 (zh) * 2019-08-15 2021-02-18 深圳市汇顶科技股份有限公司 一种芯片互连结构、芯片及芯片互连方法
JP2021068758A (ja) * 2019-10-18 2021-04-30 ブリルニクス インク 固体撮像装置、固体撮像装置の製造方法、および電子機器
JP7283511B2 (ja) * 2019-10-31 2023-05-30 株式会社ニコン 撮像装置及びカメラ
JP7603382B2 (ja) * 2019-11-18 2024-12-20 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像素子の製造方法
CN110824328B (zh) * 2019-11-21 2022-02-01 京东方科技集团股份有限公司 一种光电转换电路、其驱动方法及探测基板
CN116711078A (zh) * 2021-01-26 2023-09-05 索尼半导体解决方案公司 固态成像装置和电子设备

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4197469A (en) * 1978-05-25 1980-04-08 Rockwell International Corporation Capacitively coupled array of photodetectors
US4467340A (en) * 1981-11-16 1984-08-21 Rockwell International Corporation Pre-multiplexed Schottky barrier focal plane
JPH069240B2 (ja) * 1987-07-17 1994-02-02 三菱電機株式会社 半導体受光装置
JPH07176688A (ja) * 1993-12-20 1995-07-14 Mitsubishi Electric Corp 半導体集積回路
US6537905B1 (en) * 1996-12-30 2003-03-25 Applied Materials, Inc. Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug
US6459450B2 (en) 1998-06-24 2002-10-01 Intel Corporation Infrared filterless pixel structure
WO2000021280A1 (en) * 1998-10-07 2000-04-13 California Institute Of Technology Silicon-on-insulator (soi) active pixel sensors with the photosites implemented in the substrate
US6309964B1 (en) * 1999-07-08 2001-10-30 Taiwan Semiconductor Manufacturing Company Method for forming a copper damascene structure over tungsten plugs with improved adhesion, oxidation resistance, and diffusion barrier properties using nitridation of the tungsten plug
US7525168B2 (en) * 2002-08-27 2009-04-28 E-Phocus, Inc. CMOS sensor with electrodes across photodetectors at approximately equal potential
US6927432B2 (en) * 2003-08-13 2005-08-09 Motorola, Inc. Vertically integrated photosensor for CMOS imagers
US7180077B1 (en) * 2004-02-20 2007-02-20 Techoscience Corporation Far infrared photoconductor array
JP2005311015A (ja) 2004-04-21 2005-11-04 Sony Corp 固体撮像素子およびその製造方法
JP4349232B2 (ja) 2004-07-30 2009-10-21 ソニー株式会社 半導体モジュール及びｍｏｓ型固体撮像装置
KR100610481B1 (ko) * 2004-12-30 2006-08-08 매그나칩 반도체 유한회사 수광영역을 넓힌 이미지센서 및 그 제조 방법
JP4686201B2 (ja) * 2005-01-27 2011-05-25 パナソニック株式会社 固体撮像装置及びその製造方法
KR100782463B1 (ko) * 2005-04-13 2007-12-05 (주)실리콘화일 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법
US8072006B1 (en) * 2005-12-21 2011-12-06 American Semiconductor, Inc. Double-gated sensor cell
US7682930B2 (en) * 2006-06-09 2010-03-23 Aptina Imaging Corporation Method of forming elevated photosensor and resulting structure
KR100801447B1 (ko) 2006-06-19 2008-02-11 (주)실리콘화일 배면 광 포토다이오드를 이용한 이미지센서 및 그 제조방법
US7663165B2 (en) * 2006-08-31 2010-02-16 Aptina Imaging Corporation Transparent-channel thin-film transistor-based pixels for high-performance image sensors
US8049256B2 (en) * 2006-10-05 2011-11-01 Omnivision Technologies, Inc. Active pixel sensor having a sensor wafer connected to a support circuit wafer
US20080185645A1 (en) * 2007-02-01 2008-08-07 International Business Machines Corporation Semiconductor structure including stepped source/drain region
JP2008227253A (ja) * 2007-03-14 2008-09-25 Fujifilm Corp 裏面照射型固体撮像素子
JP2008277511A (ja) * 2007-04-27 2008-11-13 Fujifilm Corp 撮像素子及び撮像装置
JP2009065161A (ja) * 2007-09-07 2009-03-26 Dongbu Hitek Co Ltd イメージセンサ及びその製造方法
JP4799522B2 (ja) * 2007-10-12 2011-10-26 株式会社東芝 撮像装置
JP5223343B2 (ja) 2008-01-10 2013-06-26 株式会社ニコン 固体撮像素子
JP4609497B2 (ja) * 2008-01-21 2011-01-12 ソニー株式会社 固体撮像装置とその製造方法、及びカメラ
JP2009296522A (ja) 2008-06-09 2009-12-17 Nec Corp 無線通信システム、基地局、スケジューリング方法及びプログラム
US7965329B2 (en) * 2008-09-09 2011-06-21 Omnivision Technologies, Inc. High gain read circuit for 3D integrated pixel
KR20100079399A (ko) * 2008-12-31 2010-07-08 주식회사 동부하이텍 이미지 센서 및 그 제조 방법
US8384227B2 (en) * 2010-11-16 2013-02-26 Stats Chippac, Ltd. Semiconductor device and method of forming interposer frame electrically connected to embedded semiconductor die

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10608034B2 (en) 2009-12-26 2020-03-31 Canon Kabushiki Kaisha Solid-state image pickup apparatus and image pickup system

Also Published As

Publication number Publication date
EP2517248A1 (en) 2012-10-31
US20120267690A1 (en) 2012-10-25
WO2011077709A1 (en) 2011-06-30
US20150138388A1 (en) 2015-05-21
JP2011138841A (ja) 2011-07-14
US9385152B2 (en) 2016-07-05
US8912578B2 (en) 2014-12-16
EP2517248B1 (en) 2015-02-25
CN102714212B (zh) 2015-06-24
CN102714212A (zh) 2012-10-03

Similar Documents

Publication Publication Date Title
JP5489705B2 (ja) 固体撮像装置および撮像システム
US11942501B2 (en) Solid-state image pickup apparatus and image pickup system
US20220415956A1 (en) Solid-state image sensor, method for producing solid-state image sensor, and electronic device
JP5553693B2 (ja) 固体撮像装置及び撮像システム
JP5451547B2 (ja) 固体撮像装置
JP5517800B2 (ja) 固体撮像装置用の部材および固体撮像装置の製造方法
JP5784167B2 (ja) 固体撮像装置の製造方法
CN101840925A (zh) 半导体装置及其制造方法和电子设备
JP6774393B2 (ja) 固体撮像装置、及び、電子機器
CN105185801B (zh) 固态图像拾取装置和图像拾取系统
JP2025127461A (ja) イメージセンサー及びその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121226

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20121226

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140128

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140225

R151 Written notification of patent or utility model registration

Ref document number: 5489705

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151