CN102714212B - 固态图像拾取装置和图像拾取系统 - Google Patents

固态图像拾取装置和图像拾取系统 Download PDF

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Publication number
CN102714212B
CN102714212B CN201080058034.6A CN201080058034A CN102714212B CN 102714212 B CN102714212 B CN 102714212B CN 201080058034 A CN201080058034 A CN 201080058034A CN 102714212 B CN102714212 B CN 102714212B
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substrate
image pickup
copper
interconnection
chip
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Chinese (zh)
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CN102714212A (zh
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远藤信之
板野哲也
山崎和男
渡边杏平
市川武史
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1843—Infrared image sensors of the hybrid type

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  • Solid State Image Pick-Up Elements (AREA)
CN201080058034.6A 2009-12-26 2010-12-22 固态图像拾取装置和图像拾取系统 Active CN102714212B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009296522A JP5489705B2 (ja) 2009-12-26 2009-12-26 固体撮像装置および撮像システム
JP2009-296522 2009-12-26
PCT/JP2010/007414 WO2011077709A1 (en) 2009-12-26 2010-12-22 Solid-state image pickup device and image pickup system

Publications (2)

Publication Number Publication Date
CN102714212A CN102714212A (zh) 2012-10-03
CN102714212B true CN102714212B (zh) 2015-06-24

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US (2) US8912578B2 (enExample)
EP (1) EP2517248B1 (enExample)
JP (1) JP5489705B2 (enExample)
CN (1) CN102714212B (enExample)
WO (1) WO2011077709A1 (enExample)

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Also Published As

Publication number Publication date
EP2517248A1 (en) 2012-10-31
US20120267690A1 (en) 2012-10-25
WO2011077709A1 (en) 2011-06-30
US20150138388A1 (en) 2015-05-21
JP2011138841A (ja) 2011-07-14
US9385152B2 (en) 2016-07-05
JP5489705B2 (ja) 2014-05-14
US8912578B2 (en) 2014-12-16
EP2517248B1 (en) 2015-02-25
CN102714212A (zh) 2012-10-03

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