JP5483544B2 - 半導体受光装置 - Google Patents

半導体受光装置 Download PDF

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Publication number
JP5483544B2
JP5483544B2 JP2009242175A JP2009242175A JP5483544B2 JP 5483544 B2 JP5483544 B2 JP 5483544B2 JP 2009242175 A JP2009242175 A JP 2009242175A JP 2009242175 A JP2009242175 A JP 2009242175A JP 5483544 B2 JP5483544 B2 JP 5483544B2
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JP
Japan
Prior art keywords
semiconductor light
light receiving
mesa
receiving element
upper electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009242175A
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English (en)
Japanese (ja)
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JP2011091139A5 (https=
JP2011091139A (ja
Inventor
雄司 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Device Innovations Inc
Original Assignee
Sumitomo Electric Device Innovations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Device Innovations Inc filed Critical Sumitomo Electric Device Innovations Inc
Priority to JP2009242175A priority Critical patent/JP5483544B2/ja
Priority to US12/893,750 priority patent/US8350351B2/en
Publication of JP2011091139A publication Critical patent/JP2011091139A/ja
Publication of JP2011091139A5 publication Critical patent/JP2011091139A5/ja
Application granted granted Critical
Publication of JP5483544B2 publication Critical patent/JP5483544B2/ja
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements

Landscapes

  • Light Receiving Elements (AREA)
JP2009242175A 2009-10-21 2009-10-21 半導体受光装置 Expired - Fee Related JP5483544B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009242175A JP5483544B2 (ja) 2009-10-21 2009-10-21 半導体受光装置
US12/893,750 US8350351B2 (en) 2009-10-21 2010-09-29 Semiconductor light receiving device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009242175A JP5483544B2 (ja) 2009-10-21 2009-10-21 半導体受光装置

Publications (3)

Publication Number Publication Date
JP2011091139A JP2011091139A (ja) 2011-05-06
JP2011091139A5 JP2011091139A5 (https=) 2012-10-11
JP5483544B2 true JP5483544B2 (ja) 2014-05-07

Family

ID=43878647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009242175A Expired - Fee Related JP5483544B2 (ja) 2009-10-21 2009-10-21 半導体受光装置

Country Status (2)

Country Link
US (1) US8350351B2 (https=)
JP (1) JP5483544B2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013168635A (ja) 2012-01-20 2013-08-29 Sumitomo Electric Device Innovations Inc 半導体受光装置
JP2017157602A (ja) * 2016-02-29 2017-09-07 ルネサスエレクトロニクス株式会社 光半導体装置及びその製造方法
US11695093B2 (en) * 2018-11-21 2023-07-04 Analog Devices, Inc. Superlattice photodetector/light emitting diode
WO2020121851A1 (ja) 2018-12-12 2020-06-18 浜松ホトニクス株式会社 光検出装置
JP7455520B2 (ja) 2018-12-12 2024-03-26 浜松ホトニクス株式会社 光検出装置
JPWO2020121857A1 (ja) 2018-12-12 2021-11-04 浜松ホトニクス株式会社 光検出装置及び光検出装置の製造方法
US11901379B2 (en) * 2018-12-12 2024-02-13 Hamamatsu Photonics K.K. Photodetector
JPWO2020121858A1 (ja) 2018-12-12 2021-11-04 浜松ホトニクス株式会社 光検出装置及び光検出装置の製造方法
JP2023174432A (ja) * 2022-05-25 2023-12-07 日本ルメンタム株式会社 半導体受光素子

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2945438B2 (ja) * 1990-04-23 1999-09-06 株式会社日立製作所 光半導体装置及びそれを用いた受光器
JPH04167565A (ja) * 1990-10-31 1992-06-15 Fujitsu Ltd フリップチップ型受光素子
DE4314454C1 (de) * 1993-05-03 1994-10-13 Ika Analysentech Gmbh Bombenkalorimeter
US5485010A (en) * 1994-01-13 1996-01-16 Texas Instruments Incorporated Thermal isolation structure for hybrid thermal imaging system
US5426304A (en) * 1994-01-13 1995-06-20 Texas Instruments Incorporated Infrared detector thermal isolation structure and method
US5574282A (en) * 1994-06-30 1996-11-12 Texas Instruments Incorporated Thermal isolation for hybrid thermal detectors
US5559332A (en) * 1994-11-04 1996-09-24 Texas Instruments Incorporated Thermal detector and method
US5644838A (en) * 1995-01-03 1997-07-08 Texas Instruments Incorporated Method of fabricating a focal plane array for hybrid thermal imaging system
US5626773A (en) * 1995-01-03 1997-05-06 Texas Instruments Incorporated Structure and method including dry etching techniques for forming an array of thermal sensitive elements
US6348739B1 (en) * 1999-04-28 2002-02-19 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacturing the same
JP3913402B2 (ja) * 1999-06-02 2007-05-09 新日本無線株式会社 高周波回路装置
US6547946B2 (en) * 2000-04-10 2003-04-15 The Regents Of The University Of California Processing a printed wiring board by single bath electrodeposition
US8022390B1 (en) * 2007-08-17 2011-09-20 Sandia Corporation Lateral conduction infrared photodetector

Also Published As

Publication number Publication date
US20110089515A1 (en) 2011-04-21
JP2011091139A (ja) 2011-05-06
US8350351B2 (en) 2013-01-08

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