JP5480897B2 - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP5480897B2 JP5480897B2 JP2011519821A JP2011519821A JP5480897B2 JP 5480897 B2 JP5480897 B2 JP 5480897B2 JP 2011519821 A JP2011519821 A JP 2011519821A JP 2011519821 A JP2011519821 A JP 2011519821A JP 5480897 B2 JP5480897 B2 JP 5480897B2
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- layer
- electrode
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- inorganic
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- 239000000758 substrate Substances 0.000 claims description 55
- 230000004888 barrier function Effects 0.000 claims description 43
- 229920005989 resin Polymers 0.000 claims description 22
- 239000011347 resin Substances 0.000 claims description 22
- 238000007789 sealing Methods 0.000 claims description 17
- 238000010248 power generation Methods 0.000 claims description 12
- 229910010272 inorganic material Inorganic materials 0.000 claims description 7
- 239000011147 inorganic material Substances 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 125
- 239000010409 thin film Substances 0.000 description 37
- 239000010408 film Substances 0.000 description 33
- 239000007789 gas Substances 0.000 description 30
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 22
- 239000011521 glass Substances 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000005038 ethylene vinyl acetate Substances 0.000 description 8
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000009429 electrical wiring Methods 0.000 description 2
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006750 UV protection Effects 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- -1 and the like Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 208000018459 dissociative disease Diseases 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
ある。具体的には、
基板と、
前記基板上に形成された第1の電極と、
前記第1の電極に接続して形成された発電素子と、
前記発電素子に接続して形成された第2の電極と、
少なくとも前記基板と前記第2の電極に接する部分が存在する無機物のバリア層と、
前記第1の電極に接続された第1の引出端子と、
前記第2の電極に接続された第2の引出端子と、
前記第1の引出端子と、前記第2の引出端子を封止する樹脂部を有し、前記樹脂部が形成されている部分では、前記無機物のバリア層は、前記樹脂部上に形成されている太陽電池を提供する。
て大きくなる。従って、封止材として用いると、太陽電池セルとの間で大きな応力が発生
し、太陽電池セルの基板若しくは層間からの剥離が懸念される。しかし、本願の太陽電池
モジュールでは、密度の低い無機物層と密度の高い無機物層を交互に積層しているので、
太陽電池セルとの間の応力を緩和しつつ、水分の浸入を防止することができる。また、電極に接続した引出端子を樹脂で被覆成形するので、端子接合箇所の大きな段差および空隙がなくなるので、CVD法の使用を可能とする。
10 基板
11 透明電極層
12 光電変換層
13 裏面電極層
15 封止層
16 保護層
17 側面封止材
20 太陽電池セル
22 電極終端
23 電極終端
24 引出端子
25 引出端子
28 被覆形成部
30 バリア層
31 第1薄膜層
32 第2薄膜層
50 バリア層形成装置
51 成膜室
52 排気系
53 HMDS供給タンク
55 O2供給タンク
56 H2供給タンク
57 Ar供給タンク
58〜62 流量制御バルブ
63 ループアンテナ
64 絶縁チューブ
65 導電性電極
66 電源
68 基板の固定台
Claims (4)
- 基板と、
前記基板上に形成された第1の電極と、
前記第1の電極に接続して形成された発電素子と、
前記発電素子に接続して形成された第2の電極と、
少なくとも前記基板と前記第2の電極に接する部分が存在する無機物のバリア層と、
前記第1の電極に接続された第1の引出端子と、
前記第2の電極に接続された第2の引出端子と、
前記第1の引出端子と、前記第2の引出端子を封止する樹脂部を有し、前記樹脂部が形成されている部分では、前記無機物のバリア層は、前記樹脂部上に形成されている太陽電池。 - 前記バリア層は密度の異なる複数の無機物層が順に積層された請求項1に記載された太陽電池。
- 前記バリア層は、前記基板と前記第2の電極に対して直接形成された密度の低い第1の無機物層と、
前記第1の無機物層上に直接形成され前記第1の無機物層より密度の高い第2の無機物層を有する請求項2に記載された太陽電池。 - 前記密度の高い無機物層はSiO2からなる請求項3に記載された太陽電池。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011519821A JP5480897B2 (ja) | 2009-06-23 | 2010-06-16 | 太陽電池 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009149170 | 2009-06-23 | ||
JP2009149170 | 2009-06-23 | ||
JP2011519821A JP5480897B2 (ja) | 2009-06-23 | 2010-06-16 | 太陽電池 |
PCT/JP2010/060236 WO2010150692A1 (ja) | 2009-06-23 | 2010-06-16 | 太陽電池 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2010150692A1 JPWO2010150692A1 (ja) | 2012-12-10 |
JP5480897B2 true JP5480897B2 (ja) | 2014-04-23 |
Family
ID=43386462
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011519821A Expired - Fee Related JP5480897B2 (ja) | 2009-06-23 | 2010-06-16 | 太陽電池 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8993877B2 (ja) |
JP (1) | JP5480897B2 (ja) |
TW (1) | TWI481045B (ja) |
WO (1) | WO2010150692A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013004550A (ja) * | 2011-06-13 | 2013-01-07 | Toray Eng Co Ltd | 太陽電池モジュール |
US9614113B2 (en) | 2011-08-04 | 2017-04-04 | 3M Innovative Properties Company | Edge protected barrier assemblies |
JP5474116B2 (ja) * | 2012-03-27 | 2014-04-16 | 三菱樹脂株式会社 | 太陽電池用保護シート |
JP5400948B1 (ja) * | 2012-12-13 | 2014-01-29 | 三菱樹脂株式会社 | カバーシート付きロール状物及びカバーシート付きロール状物の製造方法 |
EP2800149A4 (en) * | 2011-12-28 | 2015-10-21 | Mitsubishi Plastics Inc | PROTECTIVE MATERIAL FOR SOLAR CELLS |
JP5474171B1 (ja) * | 2012-12-13 | 2014-04-16 | 三菱樹脂株式会社 | 太陽電池用保護材 |
US20140373914A1 (en) * | 2011-12-28 | 2014-12-25 | Mitsubishi Plastics, Inc. | Protective sheet |
JP5967983B2 (ja) * | 2012-03-07 | 2016-08-10 | 東レエンジニアリング株式会社 | シリコン含有膜及びシリコン含有膜形成方法 |
WO2014105734A1 (en) * | 2012-12-31 | 2014-07-03 | Saint-Gobain Performance Plastics Corporation | Thin film silicon nitride barrier layers on flexible substrate |
JP2015090915A (ja) * | 2013-11-06 | 2015-05-11 | 東レエンジニアリング株式会社 | 太陽電池モジュール |
JP6403307B2 (ja) * | 2014-05-21 | 2018-10-10 | 東レエンジニアリング株式会社 | 封止膜形成方法及び光電変換モジュール |
US9673344B2 (en) * | 2014-08-07 | 2017-06-06 | Lumeta, Llc | Apparatus and method for photovoltaic module with tapered edge seal |
WO2019205494A1 (zh) * | 2018-04-27 | 2019-10-31 | 北京铂阳顶荣光伏科技有限公司 | 导电电极膜层和光伏元件 |
DE102021111786A1 (de) | 2021-05-06 | 2022-11-10 | Hanwha Q Cells Gmbh | Solarmodul und Verwendung einer Schutzschicht |
Citations (8)
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JPS55108780A (en) * | 1979-02-14 | 1980-08-21 | Sharp Corp | Thin film solar cell |
JPS5972781A (ja) * | 1982-10-20 | 1984-04-24 | Semiconductor Energy Lab Co Ltd | 光電変換半導体装置 |
JPS5976481A (ja) * | 1982-10-25 | 1984-05-01 | Semiconductor Energy Lab Co Ltd | 光電変換半導体装置 |
JPS6472568A (en) * | 1987-09-11 | 1989-03-17 | Matsushita Electric Works Ltd | Photoelectric conversion device |
JPH10200143A (ja) * | 1997-01-14 | 1998-07-31 | Citizen Watch Co Ltd | アモルファスシリコン太陽電池 |
JP2001513264A (ja) * | 1997-02-24 | 2001-08-28 | シーメンス アクチエンゲゼルシヤフト | 耐候性及び耐食性の層構造体 |
JP2008091532A (ja) * | 2006-09-29 | 2008-04-17 | Sanyo Electric Co Ltd | 太陽電池モジュール |
WO2010087320A1 (ja) * | 2009-01-27 | 2010-08-05 | 株式会社 アルバック | 太陽電池及び太陽電池の製造方法 |
Family Cites Families (9)
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US4684761A (en) * | 1986-04-09 | 1987-08-04 | The Boeing Company | Method for making graded I-III-VI2 semiconductors and solar cell obtained thereby |
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US5021099A (en) * | 1988-08-09 | 1991-06-04 | The Boeing Company | Solar cell interconnection and packaging using tape carrier |
JP3653800B2 (ja) | 1995-06-15 | 2005-06-02 | 株式会社カネカ | 集積化薄膜太陽電池の製造方法 |
JPH10229214A (ja) * | 1997-02-14 | 1998-08-25 | Canon Inc | 太陽電池モジュール |
JP2000174296A (ja) | 1998-12-07 | 2000-06-23 | Bridgestone Corp | 太陽電池用カバー材、封止膜及び太陽電池 |
JP2001148496A (ja) | 1999-11-19 | 2001-05-29 | Kanegafuchi Chem Ind Co Ltd | 太陽電池モジュールおよびその製造方法 |
JP4078589B2 (ja) | 2002-07-23 | 2008-04-23 | 富士電機ホールディングス株式会社 | 太陽電池モジュールとその製造方法 |
US20100294349A1 (en) * | 2009-05-20 | 2010-11-25 | Uma Srinivasan | Back contact solar cells with effective and efficient designs and corresponding patterning processes |
-
2010
- 2010-06-16 JP JP2011519821A patent/JP5480897B2/ja not_active Expired - Fee Related
- 2010-06-16 US US13/378,908 patent/US8993877B2/en not_active Expired - Fee Related
- 2010-06-16 WO PCT/JP2010/060236 patent/WO2010150692A1/ja active Application Filing
- 2010-06-17 TW TW099119614A patent/TWI481045B/zh not_active IP Right Cessation
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55108780A (en) * | 1979-02-14 | 1980-08-21 | Sharp Corp | Thin film solar cell |
JPS5972781A (ja) * | 1982-10-20 | 1984-04-24 | Semiconductor Energy Lab Co Ltd | 光電変換半導体装置 |
JPS5976481A (ja) * | 1982-10-25 | 1984-05-01 | Semiconductor Energy Lab Co Ltd | 光電変換半導体装置 |
JPS6472568A (en) * | 1987-09-11 | 1989-03-17 | Matsushita Electric Works Ltd | Photoelectric conversion device |
JPH10200143A (ja) * | 1997-01-14 | 1998-07-31 | Citizen Watch Co Ltd | アモルファスシリコン太陽電池 |
JP2001513264A (ja) * | 1997-02-24 | 2001-08-28 | シーメンス アクチエンゲゼルシヤフト | 耐候性及び耐食性の層構造体 |
JP2008091532A (ja) * | 2006-09-29 | 2008-04-17 | Sanyo Electric Co Ltd | 太陽電池モジュール |
WO2010087320A1 (ja) * | 2009-01-27 | 2010-08-05 | 株式会社 アルバック | 太陽電池及び太陽電池の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2010150692A1 (ja) | 2010-12-29 |
TW201101517A (en) | 2011-01-01 |
US20120085407A1 (en) | 2012-04-12 |
TWI481045B (zh) | 2015-04-11 |
JPWO2010150692A1 (ja) | 2012-12-10 |
US8993877B2 (en) | 2015-03-31 |
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