JP5476477B2 - ガス噴射装置及びこれを用いた基板処理装置 - Google Patents
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- 238000002347 injection Methods 0.000 title claims description 219
- 239000007924 injection Substances 0.000 title claims description 219
- 239000000758 substrate Substances 0.000 title claims description 161
- 239000007789 gas Substances 0.000 claims description 342
- 238000009792 diffusion process Methods 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 39
- 238000010926 purge Methods 0.000 claims description 32
- 239000012495 reaction gas Substances 0.000 claims description 13
- 239000007921 spray Substances 0.000 claims description 7
- 238000007664 blowing Methods 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 description 15
- 239000010409 thin film Substances 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000000427 thin-film deposition Methods 0.000 description 4
- 239000003446 ligand Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Description
Claims (13)
- チャンバーの内部に回転自在に設けられて複数枚の基板を支持する基板支持部の上部に設けられ、前記基板支持部の中心点を基準として円周方向に沿って配設されて前記基板に工程ガスを吹き付ける複数のガス噴射ユニットを備えるガス噴射装置において、
前記複数のガス噴射ユニットは、
工程ガスが導入される導入口が形成されているトッププレートと、
前記トッププレートとの間に前記基板支持部の半径方向に沿ってガス拡散空間を形成するように、前記トッププレートの下部に配設され、前記導入口を介して流入して前記ガス拡散空間に拡散された工程ガスが前記基板に向かって吹き付けられるように前記ガス拡散空間の下側に多数のガス噴射孔が形成されている噴射プレートと、を備え、
前記複数のガス噴射ユニットのうちの少なくとも一つのガス噴射ユニットでは、前記工程ガスが複数の個所から前記ガス拡散空間に流入し、
前記導入口は、前記基板支持部の半径方向に沿って複数配設され、
前記工程ガスは、前記基板支持部の中心側に配設された導入口を介して流入する量よりも、前記基板支持部の半径方向に沿って外側に配設された導入口を介して流入する量の方が相対的に多量であることを特徴とするガス噴射装置。 - 前記トッププレートと噴射プレートとの間には中間プレートが介装され、
前記ガス拡散空間は、前記トッププレートと中間プレートとの間に形成され、前記導入口と連結される第1のガス拡散空間と、前記中間プレートと噴射プレートとの間に形成され、前記ガス噴射孔と連結される第2のガス拡散空間と、を備え、前記中間プレートには、第1のガス拡散空間の下部に前記第2のガス拡散空間と連結される複数の連結孔が形成されていることを特徴とする請求項1に記載のガス噴射装置。 - 前記工程ガスが導入される導入口は、前記基板支持部の半径方向において、前記基板支持部の中心側へ偏設されることを特徴とする請求項1に記載のガス噴射装置。
- 前記ガス噴射孔は、前記基板支持部の半径方向に沿って配設される多数の第1の噴射孔と、前記基板支持部の円周方向に沿って配設される多数の第2の噴射孔と、を備え、
前記ガス拡散空間は、前記第1の噴射孔及び第2の噴射孔の配設方向に沿って形成されることを特徴とする請求項1に記載のガス噴射装置。 - 前記トッププレートは一体に形成され、前記それぞれのガス噴射ユニットの噴射プレートは、前記基板支持部の中心を基準として円周方向に沿って配設されて前記トッププレートの一部分を占めて前記トッププレートの下部にそれぞれ取り付けられるか、あるいは、前記トッププレートが各ガス噴射ユニットごとに独立して複数設けられ、それぞれのトッププレートは、前記基板支持部の中心を基準として円周方向に沿って配設されて前記チャンバーの上側に取り付けられるフレームにそれぞれ固定されることを特徴とする請求項1に記載のガス噴射装置。
- 前記中間プレートに形成されている複数の連結孔は、前記基板支持部の半径方向に沿って前記基板支持部の中心側よりも外側の方に多数配設されることを特徴とする請求項2に記載のガス噴射装置。
- 前記中間プレートに形成されている複数の連結孔は、前記基板支持部の半径方向に沿って外側に配設された連結孔の方が、前記基板支持部の中心側に配設された連結孔に比べて
、広さが大きく形成されていることを特徴とする請求項2に記載のガス噴射装置。 - 前記ガス噴射ユニットは、原料ガスを吹き付ける複数の原料ガス噴射ユニットと、前記原料ガスをパージするためのパージガスを吹き付ける複数のパージガス噴射ユニットと、を備えることを特徴とする請求項1に記載のガス噴射装置。
- 前記原料ガスをパージするためのパージガスを前記基板支持部上の中心部側に供給するように、前記基板支持部の円周方向に沿って配設された複数のガス噴射ユニットの中央部に配設される中央パージガス噴射ユニットをさらに備えることを特徴とする請求項8に記載のガス噴射装置。
- 前記原料ガス噴射ユニットとパージガス噴射ユニットのうち、互いに隣設されて互いに同じガスを吹き付ける2以上の噴射ユニット同士でグループを作ってガス噴射ブロックを形成することを特徴とする請求項8に記載のガス噴射装置。
- 前記原料ガス噴射ユニットは、ソースガスを吹き付ける噴射ユニットと、前記ソースガスと反応する反応ガスを吹き付ける噴射ユニットと、を備え、ソースガスを吹き付ける複数の噴射ユニットまたは反応ガスを吹き付ける複数の噴射ユニット同士でグループを作ってガス噴射ブロックを形成することを特徴とする請求項10に記載のガス噴射装置。
- 前記複数のガス噴射ユニット同士の間には、ガスを選択的に吹き付けるか、あるいは、吹き付けないバッファ噴射ユニットが介装されることを特徴とする請求項8に記載のガス噴射装置。
- 基板に対する所定の処理を行うように内部に空間が形成されるチャンバーと、
前記チャンバーの内部に回転自在に設けられ、前記複数枚の基板が載置される基板支持部と、
前記基板支持部の上部に配設されて前記基板に向かってガスを吹き付ける請求項1から請求項12のいずれか一項に記載のガス噴射装置と、を備えることを特徴とする基板処理装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR10-2009-0081059 | 2009-08-31 | ||
KR1020090081059A KR101108879B1 (ko) | 2009-08-31 | 2009-08-31 | 가스분사장치 및 이를 이용한 기판처리장치 |
PCT/KR2010/005628 WO2011025214A2 (ko) | 2009-08-31 | 2010-08-24 | 가스분사장치 및 이를 이용한 기판처리장치 |
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JP2013503498A JP2013503498A (ja) | 2013-01-31 |
JP5476477B2 true JP5476477B2 (ja) | 2014-04-23 |
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US (1) | US9732424B2 (ja) |
JP (1) | JP5476477B2 (ja) |
KR (1) | KR101108879B1 (ja) |
CN (1) | CN102576661B (ja) |
TW (1) | TWI417416B (ja) |
WO (1) | WO2011025214A2 (ja) |
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