JP5476477B2 - ガス噴射装置及びこれを用いた基板処理装置 - Google Patents
ガス噴射装置及びこれを用いた基板処理装置 Download PDFInfo
- Publication number
- JP5476477B2 JP5476477B2 JP2012527813A JP2012527813A JP5476477B2 JP 5476477 B2 JP5476477 B2 JP 5476477B2 JP 2012527813 A JP2012527813 A JP 2012527813A JP 2012527813 A JP2012527813 A JP 2012527813A JP 5476477 B2 JP5476477 B2 JP 5476477B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- gas injection
- substrate support
- injection
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002347 injection Methods 0.000 title claims description 219
- 239000007924 injection Substances 0.000 title claims description 219
- 239000000758 substrate Substances 0.000 title claims description 161
- 239000007789 gas Substances 0.000 claims description 342
- 238000009792 diffusion process Methods 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 39
- 238000010926 purge Methods 0.000 claims description 32
- 239000012495 reaction gas Substances 0.000 claims description 13
- 239000007921 spray Substances 0.000 claims description 7
- 238000007664 blowing Methods 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 description 15
- 239000010409 thin film Substances 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000000427 thin-film deposition Methods 0.000 description 4
- 239000003446 ligand Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (13)
- チャンバーの内部に回転自在に設けられて複数枚の基板を支持する基板支持部の上部に設けられ、前記基板支持部の中心点を基準として円周方向に沿って配設されて前記基板に工程ガスを吹き付ける複数のガス噴射ユニットを備えるガス噴射装置において、
前記複数のガス噴射ユニットは、
工程ガスが導入される導入口が形成されているトッププレートと、
前記トッププレートとの間に前記基板支持部の半径方向に沿ってガス拡散空間を形成するように、前記トッププレートの下部に配設され、前記導入口を介して流入して前記ガス拡散空間に拡散された工程ガスが前記基板に向かって吹き付けられるように前記ガス拡散空間の下側に多数のガス噴射孔が形成されている噴射プレートと、を備え、
前記複数のガス噴射ユニットのうちの少なくとも一つのガス噴射ユニットでは、前記工程ガスが複数の個所から前記ガス拡散空間に流入し、
前記導入口は、前記基板支持部の半径方向に沿って複数配設され、
前記工程ガスは、前記基板支持部の中心側に配設された導入口を介して流入する量よりも、前記基板支持部の半径方向に沿って外側に配設された導入口を介して流入する量の方が相対的に多量であることを特徴とするガス噴射装置。 - 前記トッププレートと噴射プレートとの間には中間プレートが介装され、
前記ガス拡散空間は、前記トッププレートと中間プレートとの間に形成され、前記導入口と連結される第1のガス拡散空間と、前記中間プレートと噴射プレートとの間に形成され、前記ガス噴射孔と連結される第2のガス拡散空間と、を備え、前記中間プレートには、第1のガス拡散空間の下部に前記第2のガス拡散空間と連結される複数の連結孔が形成されていることを特徴とする請求項1に記載のガス噴射装置。 - 前記工程ガスが導入される導入口は、前記基板支持部の半径方向において、前記基板支持部の中心側へ偏設されることを特徴とする請求項1に記載のガス噴射装置。
- 前記ガス噴射孔は、前記基板支持部の半径方向に沿って配設される多数の第1の噴射孔と、前記基板支持部の円周方向に沿って配設される多数の第2の噴射孔と、を備え、
前記ガス拡散空間は、前記第1の噴射孔及び第2の噴射孔の配設方向に沿って形成されることを特徴とする請求項1に記載のガス噴射装置。 - 前記トッププレートは一体に形成され、前記それぞれのガス噴射ユニットの噴射プレートは、前記基板支持部の中心を基準として円周方向に沿って配設されて前記トッププレートの一部分を占めて前記トッププレートの下部にそれぞれ取り付けられるか、あるいは、前記トッププレートが各ガス噴射ユニットごとに独立して複数設けられ、それぞれのトッププレートは、前記基板支持部の中心を基準として円周方向に沿って配設されて前記チャンバーの上側に取り付けられるフレームにそれぞれ固定されることを特徴とする請求項1に記載のガス噴射装置。
- 前記中間プレートに形成されている複数の連結孔は、前記基板支持部の半径方向に沿って前記基板支持部の中心側よりも外側の方に多数配設されることを特徴とする請求項2に記載のガス噴射装置。
- 前記中間プレートに形成されている複数の連結孔は、前記基板支持部の半径方向に沿って外側に配設された連結孔の方が、前記基板支持部の中心側に配設された連結孔に比べて
、広さが大きく形成されていることを特徴とする請求項2に記載のガス噴射装置。 - 前記ガス噴射ユニットは、原料ガスを吹き付ける複数の原料ガス噴射ユニットと、前記原料ガスをパージするためのパージガスを吹き付ける複数のパージガス噴射ユニットと、を備えることを特徴とする請求項1に記載のガス噴射装置。
- 前記原料ガスをパージするためのパージガスを前記基板支持部上の中心部側に供給するように、前記基板支持部の円周方向に沿って配設された複数のガス噴射ユニットの中央部に配設される中央パージガス噴射ユニットをさらに備えることを特徴とする請求項8に記載のガス噴射装置。
- 前記原料ガス噴射ユニットとパージガス噴射ユニットのうち、互いに隣設されて互いに同じガスを吹き付ける2以上の噴射ユニット同士でグループを作ってガス噴射ブロックを形成することを特徴とする請求項8に記載のガス噴射装置。
- 前記原料ガス噴射ユニットは、ソースガスを吹き付ける噴射ユニットと、前記ソースガスと反応する反応ガスを吹き付ける噴射ユニットと、を備え、ソースガスを吹き付ける複数の噴射ユニットまたは反応ガスを吹き付ける複数の噴射ユニット同士でグループを作ってガス噴射ブロックを形成することを特徴とする請求項10に記載のガス噴射装置。
- 前記複数のガス噴射ユニット同士の間には、ガスを選択的に吹き付けるか、あるいは、吹き付けないバッファ噴射ユニットが介装されることを特徴とする請求項8に記載のガス噴射装置。
- 基板に対する所定の処理を行うように内部に空間が形成されるチャンバーと、
前記チャンバーの内部に回転自在に設けられ、前記複数枚の基板が載置される基板支持部と、
前記基板支持部の上部に配設されて前記基板に向かってガスを吹き付ける請求項1から請求項12のいずれか一項に記載のガス噴射装置と、を備えることを特徴とする基板処理装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090081059A KR101108879B1 (ko) | 2009-08-31 | 2009-08-31 | 가스분사장치 및 이를 이용한 기판처리장치 |
KR10-2009-0081059 | 2009-08-31 | ||
PCT/KR2010/005628 WO2011025214A2 (ko) | 2009-08-31 | 2010-08-24 | 가스분사장치 및 이를 이용한 기판처리장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013503498A JP2013503498A (ja) | 2013-01-31 |
JP5476477B2 true JP5476477B2 (ja) | 2014-04-23 |
Family
ID=43628567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012527813A Active JP5476477B2 (ja) | 2009-08-31 | 2010-08-24 | ガス噴射装置及びこれを用いた基板処理装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9732424B2 (ja) |
JP (1) | JP5476477B2 (ja) |
KR (1) | KR101108879B1 (ja) |
CN (1) | CN102576661B (ja) |
TW (1) | TWI417416B (ja) |
WO (1) | WO2011025214A2 (ja) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5497423B2 (ja) * | 2009-12-25 | 2014-05-21 | 東京エレクトロン株式会社 | 成膜装置 |
US9175391B2 (en) * | 2011-05-26 | 2015-11-03 | Intermolecular, Inc. | Apparatus and method for combinatorial gas distribution through a multi-zoned showerhead |
KR101243742B1 (ko) * | 2011-06-24 | 2013-03-13 | 국제엘렉트릭코리아 주식회사 | 반도체 제조에 사용되는 분사부재 및 그것을 갖는 기판 처리 장치 |
JP5884500B2 (ja) * | 2012-01-18 | 2016-03-15 | 東京エレクトロン株式会社 | 成膜装置 |
KR101828989B1 (ko) * | 2012-04-20 | 2018-02-14 | 주식회사 원익아이피에스 | 기판처리장치 |
US20130284097A1 (en) * | 2012-04-25 | 2013-10-31 | Joseph M. Ranish | Gas distribution module for insertion in lateral flow chambers |
JP6157061B2 (ja) * | 2012-05-11 | 2017-07-05 | 東京エレクトロン株式会社 | ガス供給装置及び基板処理装置 |
KR101863652B1 (ko) * | 2012-05-30 | 2018-06-04 | 주성엔지니어링(주) | 기판 처리 장치 및 기판 처리 방법 |
KR101383291B1 (ko) * | 2012-06-20 | 2014-04-10 | 주식회사 유진테크 | 기판 처리 장치 |
CN105814664B (zh) * | 2013-11-18 | 2019-05-17 | 国际电气高丽株式会社 | 反应诱导单元、基板处理装置及薄膜沉积方法 |
US9464353B2 (en) * | 2013-11-21 | 2016-10-11 | Wonik Ips Co., Ltd. | Substrate processing apparatus |
US20150147889A1 (en) * | 2013-11-26 | 2015-05-28 | Applied Materials, Inc. | Tilted Plate For Batch Processing And Methods Of Use |
KR101560623B1 (ko) * | 2014-01-03 | 2015-10-15 | 주식회사 유진테크 | 기판처리장치 및 기판처리방법 |
CN105331953B (zh) * | 2014-07-23 | 2019-04-23 | 北京北方华创微电子装备有限公司 | 进气装置以及半导体加工设备 |
JP6298383B2 (ja) * | 2014-08-19 | 2018-03-20 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
KR102297567B1 (ko) | 2014-09-01 | 2021-09-02 | 삼성전자주식회사 | 가스 주입 장치 및 이를 포함하는 박막 증착 장비 |
JP6305314B2 (ja) * | 2014-10-29 | 2018-04-04 | 東京エレクトロン株式会社 | 成膜装置およびシャワーヘッド |
KR102304722B1 (ko) * | 2014-12-05 | 2021-09-27 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
US10954597B2 (en) * | 2015-03-17 | 2021-03-23 | Asm Ip Holding B.V. | Atomic layer deposition apparatus |
KR101668689B1 (ko) * | 2015-04-14 | 2016-10-24 | 국제엘렉트릭코리아 주식회사 | 박막 증착 방법 |
KR102477302B1 (ko) | 2015-10-05 | 2022-12-13 | 주성엔지니어링(주) | 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법 |
US10519545B2 (en) * | 2016-05-31 | 2019-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods for a plasma enhanced deposition of material on a semiconductor substrate |
KR20180053491A (ko) * | 2016-11-11 | 2018-05-23 | 삼성전자주식회사 | 가스 분사 장치 및 이를 포함하는 기판 처리 장치 |
JP6816634B2 (ja) * | 2017-02-28 | 2021-01-20 | 東京エレクトロン株式会社 | 成膜装置 |
US20180245216A1 (en) * | 2017-02-28 | 2018-08-30 | Tokyo Electron Limited | Film forming apparatus |
KR101948282B1 (ko) * | 2017-04-20 | 2019-02-14 | 주성엔지니어링(주) | 기판처리장치 |
TWI733021B (zh) | 2017-05-15 | 2021-07-11 | 美商應用材料股份有限公司 | 電漿源組件、處理腔室與處理基板的方法 |
JP6809392B2 (ja) * | 2017-06-19 | 2021-01-06 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体 |
CN107587117B (zh) | 2017-08-16 | 2019-06-11 | 武汉华星光电半导体显示技术有限公司 | 一种气体扩散装置 |
KR102456063B1 (ko) * | 2017-12-15 | 2022-10-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 수직 플라즈마 소스로부터의 개선된 플라즈마 노출을 위한 성형된 전극들 |
US10943768B2 (en) * | 2018-04-20 | 2021-03-09 | Applied Materials, Inc. | Modular high-frequency source with integrated gas distribution |
JP6575641B1 (ja) * | 2018-06-28 | 2019-09-18 | 株式会社明電舎 | シャワーヘッドおよび処理装置 |
KR102587195B1 (ko) * | 2018-09-21 | 2023-10-11 | 주성엔지니어링(주) | 기판처리장치 |
KR101982254B1 (ko) * | 2018-12-17 | 2019-05-24 | 주성엔지니어링(주) | 기판 처리 장치 |
US11798803B2 (en) * | 2019-05-15 | 2023-10-24 | Applied Materials, Inc. | Dynamic multi zone flow control for a processing system |
KR102632876B1 (ko) | 2019-08-02 | 2024-02-06 | 주식회사 원익아이피에스 | 기판 처리 장치 |
JP7037526B2 (ja) * | 2019-09-10 | 2022-03-16 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
KR102170451B1 (ko) * | 2020-01-22 | 2020-10-28 | (주)이큐테크플러스 | 프리커서와 반응가스를 함께 분사하는 라디컬 유닛 및 이를 포함하는 ald장치 |
US11694908B2 (en) * | 2020-10-22 | 2023-07-04 | Applied Materials, Inc. | Gasbox for semiconductor processing chamber |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6302964B1 (en) | 1998-06-16 | 2001-10-16 | Applied Materials, Inc. | One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system |
US6245192B1 (en) | 1999-06-30 | 2001-06-12 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
JP4817210B2 (ja) | 2000-01-06 | 2011-11-16 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
JP2001244256A (ja) * | 2000-03-02 | 2001-09-07 | Hitachi Ltd | 処理装置 |
AU2002241496A1 (en) * | 2000-11-20 | 2002-06-18 | Applied Epi, Inc. | Surface sealing showerhead for vapor deposition reactor having integrated flow diverters |
TWI224815B (en) * | 2001-08-01 | 2004-12-01 | Tokyo Electron Ltd | Gas processing apparatus and gas processing method |
US6821347B2 (en) * | 2002-07-08 | 2004-11-23 | Micron Technology, Inc. | Apparatus and method for depositing materials onto microelectronic workpieces |
KR100509231B1 (ko) * | 2003-01-03 | 2005-08-22 | 주식회사 아이피에스 | 박막증착용 반응용기 |
ATE554196T1 (de) | 2003-08-20 | 2012-05-15 | Veeco Instr Inc | Vertikal durchströmte drehscheibenreaktoren und behandlungsverfahren damit |
KR100550342B1 (ko) | 2004-02-24 | 2006-02-08 | 삼성전자주식회사 | 가스 산포 방법, 및 샤워 헤드, 및 샤워 헤드를 구비하는반도체 기판 가공 장치 |
US8083853B2 (en) * | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US7785672B2 (en) * | 2004-04-20 | 2010-08-31 | Applied Materials, Inc. | Method of controlling the film properties of PECVD-deposited thin films |
US8074599B2 (en) * | 2004-05-12 | 2011-12-13 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
US7572337B2 (en) * | 2004-05-26 | 2009-08-11 | Applied Materials, Inc. | Blocker plate bypass to distribute gases in a chemical vapor deposition system |
KR100558922B1 (ko) | 2004-12-16 | 2006-03-10 | (주)퓨전에이드 | 박막 증착장치 및 방법 |
DE102005055468A1 (de) | 2005-11-22 | 2007-05-24 | Aixtron Ag | Verfahren zum Abscheiden von Schichten in einem CVD-Reaktor sowie Gaseinlassorgan für einen CVD-Reaktor |
US20070218702A1 (en) | 2006-03-15 | 2007-09-20 | Asm Japan K.K. | Semiconductor-processing apparatus with rotating susceptor |
JP5045000B2 (ja) * | 2006-06-20 | 2012-10-10 | 東京エレクトロン株式会社 | 成膜装置、ガス供給装置、成膜方法及び記憶媒体 |
CN101365822A (zh) * | 2006-07-31 | 2009-02-11 | 东京毅力科创株式会社 | 基板处理装置、程序、存储介质和决定是否需要调节的方法 |
JP5157101B2 (ja) | 2006-08-04 | 2013-03-06 | 東京エレクトロン株式会社 | ガス供給装置及び基板処理装置 |
JP5207615B2 (ja) | 2006-10-30 | 2013-06-12 | 東京エレクトロン株式会社 | 成膜方法および基板処理装置 |
US8216419B2 (en) * | 2008-03-28 | 2012-07-10 | Bridgelux, Inc. | Drilled CVD shower head |
KR100905278B1 (ko) | 2007-07-19 | 2009-06-29 | 주식회사 아이피에스 | 박막증착장치, 박막증착방법 및 반도체 소자의 갭-필 방법 |
US8334015B2 (en) | 2007-09-05 | 2012-12-18 | Intermolecular, Inc. | Vapor based combinatorial processing |
EP2215282B1 (en) * | 2007-10-11 | 2016-11-30 | Valence Process Equipment, Inc. | Chemical vapor deposition reactor |
US8702867B2 (en) * | 2008-07-08 | 2014-04-22 | Jusung Engineering Co., Ltd. | Gas distribution plate and substrate treating apparatus including the same |
US8961691B2 (en) | 2008-09-04 | 2015-02-24 | Tokyo Electron Limited | Film deposition apparatus, film deposition method, computer readable storage medium for storing a program causing the apparatus to perform the method |
KR101165615B1 (ko) | 2008-12-10 | 2012-07-17 | 주식회사 원익아이피에스 | 복수기판 처리장치 |
US8293013B2 (en) * | 2008-12-30 | 2012-10-23 | Intermolecular, Inc. | Dual path gas distribution device |
US8382939B2 (en) * | 2009-07-13 | 2013-02-26 | Applied Materials, Inc. | Plasma processing chamber with enhanced gas delivery |
-
2009
- 2009-08-31 KR KR1020090081059A patent/KR101108879B1/ko active IP Right Grant
-
2010
- 2010-08-24 US US13/393,498 patent/US9732424B2/en active Active
- 2010-08-24 WO PCT/KR2010/005628 patent/WO2011025214A2/ko active Application Filing
- 2010-08-24 JP JP2012527813A patent/JP5476477B2/ja active Active
- 2010-08-24 CN CN201080038519.9A patent/CN102576661B/zh active Active
- 2010-08-30 TW TW099129113A patent/TWI417416B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR101108879B1 (ko) | 2012-01-30 |
US9732424B2 (en) | 2017-08-15 |
JP2013503498A (ja) | 2013-01-31 |
TW201132789A (en) | 2011-10-01 |
WO2011025214A3 (ko) | 2011-07-07 |
CN102576661B (zh) | 2015-04-15 |
CN102576661A (zh) | 2012-07-11 |
WO2011025214A2 (ko) | 2011-03-03 |
KR20110023289A (ko) | 2011-03-08 |
TWI417416B (zh) | 2013-12-01 |
US20120152171A1 (en) | 2012-06-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5476477B2 (ja) | ガス噴射装置及びこれを用いた基板処理装置 | |
JP5458179B2 (ja) | ガス噴射装置及びこれを用いた基板処理装置 | |
US8012259B2 (en) | Substrate processing apparatus | |
TWI505358B (zh) | 成膜裝置 | |
TWI498988B (zh) | A gas supply device, a film forming apparatus, and a film forming method | |
US20120199067A1 (en) | Film-forming apparatus | |
CN101826446A (zh) | 成膜装置和成膜方法 | |
JP2010084230A (ja) | 成膜装置、基板処理装置及び回転テーブル | |
JP6151829B2 (ja) | 基板処理装置 | |
KR101185376B1 (ko) | 가스 분사 조립체 및 이를 이용한 박막증착장치 | |
KR20130074413A (ko) | 기판처리장치 | |
KR101324207B1 (ko) | 가스 분사 장치 및 이를 포함하는 기판 처리 장치 | |
KR20110041665A (ko) | 기판처리장치 | |
KR101426432B1 (ko) | 기판 처리 장치 및 방법 | |
KR100901118B1 (ko) | 박막 증착장치의 분사유닛 | |
JP2004010990A (ja) | 薄膜形成装置 | |
KR101907973B1 (ko) | 가스분사장치 및 이를 구비하는 기판처리장치 | |
KR101665581B1 (ko) | 박막증착방법 | |
KR20110072351A (ko) | 기판처리장치 | |
KR102632876B1 (ko) | 기판 처리 장치 | |
KR20130035039A (ko) | 가스분사장치, 및 이를 포함하는 기판 처리장치 | |
KR102461199B1 (ko) | 기판처리장치 | |
JP7159297B2 (ja) | 基板安置手段および基板処理装置 | |
KR101993669B1 (ko) | 가스분사장치 및 이를 구비하는 기판처리장치 | |
JP2009130257A (ja) | 半導体製造装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130826 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130903 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131203 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140204 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140207 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5476477 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |