KR20110023289A - 가스분사장치 및 이를 이용한 기판처리장치 - Google Patents
가스분사장치 및 이를 이용한 기판처리장치 Download PDFInfo
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- KR20110023289A KR20110023289A KR1020090081059A KR20090081059A KR20110023289A KR 20110023289 A KR20110023289 A KR 20110023289A KR 1020090081059 A KR1020090081059 A KR 1020090081059A KR 20090081059 A KR20090081059 A KR 20090081059A KR 20110023289 A KR20110023289 A KR 20110023289A
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- 239000000758 substrate Substances 0.000 title claims abstract description 169
- 238000000034 method Methods 0.000 claims abstract description 53
- 239000007921 spray Substances 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 335
- 238000002347 injection Methods 0.000 claims description 204
- 239000007924 injection Substances 0.000 claims description 204
- 238000009792 diffusion process Methods 0.000 claims description 51
- 238000010926 purge Methods 0.000 claims description 34
- 239000012495 reaction gas Substances 0.000 claims description 15
- 238000005507 spraying Methods 0.000 claims description 5
- 239000004047 hole gas Substances 0.000 claims 1
- 239000002994 raw material Substances 0.000 description 11
- 239000010409 thin film Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 238000000427 thin-film deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (15)
- 챔버 내부에 회전가능하게 설치되어 복수의 기판을 지지하는 기판지지부의 상부에 설치되며, 상기 기판지지부의 중심점을 기준으로 원주방향을 따라 배치되어 상기 기판에 공정가스를 분사하는 복수의 가스분사유닛을 구비하는 가스분사장치에 있어서,상기 복수의 가스분사유닛은,공정가스가 도입되는 도입구가 형성되어 있는 탑플레이트와,상기 탑프레이트와의 사이에서 상기 기판지지부의 반경방향을 따라 가스확산공간을 형성하도록 상기 탑플레이트의 하부에 배치되며, 상기 도입구를 통해 유입되어 상기 가스확산공간에서 확산된 공정가스가 상기 기판을 향해 분사되도록 상기 가스확산공간의 하측에 다수의 가스분사공이 형성되어 있는 분사플레이트를 구비하며,상기 복수의 가스분사유닛들 중 적어도 하나의 가스분사유닛에서는 상기 공정가스가 복수의 지점에서 상기 가스확산공간으로 유입되는 것을 특징으로 하는 가스분사장치.
- 제1항에 있어서,상기 탑플레이트와 분사플레이트 사이에는 중간플레이트가 개재되며,상기 가스확산공간은 상기 탑플레이트와 중간플레이트 사이에 형성되며 상기 도입구와 연결되는 제1가스확산공간과, 상기 중간플레이트와 분사플레이트 사이에 형성되며 상기 가스분사공과 연결되는 제2가스확산공간으로 이루어지며,상기 중간플레이트에는 제1가스확산공간의 하부에 상기 제2가스확산공간과 연결되는 복수의 연결공이 형성되는 것을 특징으로 하는 가스분사장치.
- 제1항에 있어서,상기 공정가스가 도입되는 도입구는 상기 기판지지부의 반경방향에서 상기 기판지지부의 중심쪽에 치우쳐 배치되는 것을 특징으로 하는 가스분사장치.
- 제1항에 있어서,상기 도입구는 상기 기판지지부의 반경방향을 따라 복수 개 배치되는 것을 특징으로 하는 가스분사장치.
- 제4항에 있어서,상기 공정가스는 상기 기판지지부의 중심측에 배치된 도입구를 통해 유입되는 양보다 상기 기판지지부의 반경방향을 따라 외측에 배치된 도입구를 통해 상대유입되는 양이 상대적으로 많은 것을 특징으로 하는 가스분사장치.
- 제1항에 있어서,상기 가스분사공은 상기 기판지지부의 반경방향을 따라 배치되는 다수의 제1 분사공과 상기 기판지지부의 원주방향을 따라 배치되는 다수의 제2분사공으로 이루어지며,상기 가스확산공간은 상기 제1분사공과 제2분사공의 배치방향을 따라 형성되는 것을 특징으로 하는 가스분사장치.
- 제1항에 있어서,상기 탑플레이트는 일체로 형성되며, 상기 각각의 가스분사유닛의 분사플레이트는 상기 기판지지부의 중심을 기준으로 원주방향을 따라 배치되어 상기 탑플레이트의 일부분을 점하며 상기 탑플레이트에 하부에 각각 결합되는 경우, 또는상기 탑플레이트가 각 가스분사유닛별로 독립되어 복수 개 마련되며 각각의 탑플레이트는 상기 기판지지부의 중심을 기준으로 원주방향을 따라 배치되어 상기 챔버의 상측에 결합되는 프레임에 각각 고정되는 경우 중 선택된 어느 하나인 것을 특징으로 하는 가스분사장치.
- 제2항에 있어서,상기 중간플레이트에 형성된 복수의 연결공은 상기 기판지지부의 반경방향을 따라 상기 기판지지부의 중심쪽 보다 외측에 많이 배치되는 것을 특징으로 하는 가스분사장치.
- 제2항에 있어서,상기 중간플레이트에 형성된 복수의 연결공은 상기 기판지지부의 반경방향을 따라 외측에 배치된 연결공이 상기 기판지지부의 중심측에 배치된 연결공에 비하여 넓이가 크게 형성되는 것을 특징으로 하는 가스분사장치.
- 제1항에 있어서,상기 가스분사유닛은 원료가스를 분사하는 복수의 원료가스 분사유닛과 상기 원료가스를 퍼지하기 위한 퍼지가스를 분사하는 복수의 퍼지가스 분사유닛을 포함하는 것을 특징으로 하는 가스분사장치.
- 제10항에 있어서,상기 원료가스들을 퍼지하기 위한 퍼지가스를 상기 기판지지부 상의 중심부쪽으로 공급하도록, 상기 기판지지부의 원주방향을 따라 배치된 복수의 가스분사유닛들의 중앙부에 설치되는 중앙 퍼지가스 분사유닛을 더 구비하는 것을 특징으로 하는 가스분사장치.
- 제10항에 있어서,상기 원료가스 분사유닛들과 퍼지가스 분사유닛들 중 상호 인접하게 배치되며 서로 동일한 가스를 분사하는 둘 이상의 분사유닛들이 그룹을 지어 가스분사블럭을 형성하는 것을 특징으로 하는 가스분사장치.
- 제12항에 있어서,상기 원료가스 분사유닛은 소스가스를 분사하는 분사유닛과, 상기 소스가스와 반응하는 반응가스를 분사하는 분사유닛을 포함하며, 소스가스를 분사하는 복수의 분사유닛 또는 반응가스를 분사하는 복수의 분사유닛이 그룹을 지어 가스분사블럭을 형성하는 것을 특징으로 하는 가스분사장치.
- 제10항에 있어서,상기 복수의 가스분사유닛들 사이에는 가스를 선택적으로 분사하거나 분사하지 않을 수 있는 버퍼분사유닛이 개재되는 것을 특징으로 하는 가스분사장치.
- 기판에 대한 일정한 처리를 수행하도록 내부에 공간이 형성되는 챔버;상기 챔버 내부에 회전 가능하게 설치되며, 상기 복수의 기판이 안착되는 기판지지부; 및상기 기판지지부의 상부에 설치되어 상기 기판을 향해 가스를 분사하는 것으로서, 상기 청구항 1 내지 청구항 14 중 어느 한 한에 기재된 가스분사장치;를 구비하는 것을 특징으로 하는 기판처리장치.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090081059A KR101108879B1 (ko) | 2009-08-31 | 2009-08-31 | 가스분사장치 및 이를 이용한 기판처리장치 |
JP2012527813A JP5476477B2 (ja) | 2009-08-31 | 2010-08-24 | ガス噴射装置及びこれを用いた基板処理装置 |
CN201080038519.9A CN102576661B (zh) | 2009-08-31 | 2010-08-24 | 气体喷射装置和使用其的基底处理设备 |
PCT/KR2010/005628 WO2011025214A2 (ko) | 2009-08-31 | 2010-08-24 | 가스분사장치 및 이를 이용한 기판처리장치 |
US13/393,498 US9732424B2 (en) | 2009-08-31 | 2010-08-24 | Gas injection apparatus and substrate processing apparatus using same |
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EP2714959A1 (en) * | 2011-05-26 | 2014-04-09 | Intermolecular, Inc. | Apparatus and method for combinatorial gas distribution through a multi-zoned showerhead |
EP2714959A4 (en) * | 2011-05-26 | 2015-01-07 | Intermolecular Inc | DEVICE AND METHOD FOR COMBINATORY GAS DISTRIBUTION VIA A SHOWER HEAD WITH MULTIPLE ZONES |
CN103635992A (zh) * | 2011-06-24 | 2014-03-12 | 国际电气高丽株式会社 | 用于半导体制造的喷射构件及具有该喷射构件的基板处理装置 |
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KR20180099477A (ko) * | 2017-02-28 | 2018-09-05 | 도쿄엘렉트론가부시키가이샤 | 성막 장치 |
KR20200034491A (ko) * | 2018-09-21 | 2020-03-31 | 주성엔지니어링(주) | 기판처리장치 |
KR20180136924A (ko) * | 2018-12-17 | 2018-12-26 | 주성엔지니어링(주) | 기판 처리 장치 |
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WO2011025214A2 (ko) | 2011-03-03 |
US20120152171A1 (en) | 2012-06-21 |
TWI417416B (zh) | 2013-12-01 |
KR101108879B1 (ko) | 2012-01-30 |
CN102576661B (zh) | 2015-04-15 |
CN102576661A (zh) | 2012-07-11 |
US9732424B2 (en) | 2017-08-15 |
JP5476477B2 (ja) | 2014-04-23 |
TW201132789A (en) | 2011-10-01 |
JP2013503498A (ja) | 2013-01-31 |
WO2011025214A3 (ko) | 2011-07-07 |
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