JP5464446B2 - 半導体発光素子及びその製造方法 - Google Patents
半導体発光素子及びその製造方法 Download PDFInfo
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- JP5464446B2 JP5464446B2 JP2010540380A JP2010540380A JP5464446B2 JP 5464446 B2 JP5464446 B2 JP 5464446B2 JP 2010540380 A JP2010540380 A JP 2010540380A JP 2010540380 A JP2010540380 A JP 2010540380A JP 5464446 B2 JP5464446 B2 JP 5464446B2
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- refractive index
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- sapphire substrate
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- 239000004065 semiconductor Substances 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 67
- 229910052594 sapphire Inorganic materials 0.000 claims description 65
- 239000010980 sapphire Substances 0.000 claims description 65
- 239000013078 crystal Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 17
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- -1 silicon oxide nitride Chemical class 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 207
- 229910052710 silicon Inorganic materials 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 238000006243 chemical reaction Methods 0.000 description 18
- 239000012495 reaction gas Substances 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- 229910002704 AlGaN Inorganic materials 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 239000000470 constituent Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 229910021478 group 5 element Inorganic materials 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 235000013842 nitrous oxide Nutrition 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 238000004581 coalescence Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017121 AlSiO Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229910003697 SiBN Inorganic materials 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- LKTZODAHLMBGLG-UHFFFAOYSA-N alumanylidynesilicon;$l^{2}-alumanylidenesilylidenealuminum Chemical compound [Si]#[Al].[Si]#[Al].[Al]=[Si]=[Al] LKTZODAHLMBGLG-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010540380A JP5464446B2 (ja) | 2008-11-28 | 2009-11-26 | 半導体発光素子及びその製造方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008303814 | 2008-11-28 | ||
| JP2008303814 | 2008-11-28 | ||
| JP2010540380A JP5464446B2 (ja) | 2008-11-28 | 2009-11-26 | 半導体発光素子及びその製造方法 |
| PCT/JP2009/006406 WO2010061617A1 (fr) | 2008-11-28 | 2009-11-26 | Élément semi-conducteur électroluminescent et procédé de fabrication associé |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2010061617A1 JPWO2010061617A1 (ja) | 2012-04-26 |
| JP5464446B2 true JP5464446B2 (ja) | 2014-04-09 |
Family
ID=42225502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010540380A Expired - Fee Related JP5464446B2 (ja) | 2008-11-28 | 2009-11-26 | 半導体発光素子及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5464446B2 (fr) |
| TW (1) | TW201029233A (fr) |
| WO (1) | WO2010061617A1 (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011033570A1 (fr) * | 2009-09-17 | 2011-03-24 | 株式会社 東芝 | Élément électroluminescent à semi-conducteur |
| CN102354659B (zh) * | 2011-11-02 | 2016-05-11 | 上海华虹宏力半导体制造有限公司 | 掩膜成核消除方法以及选择性外延生长方法 |
| US8507947B2 (en) * | 2011-12-09 | 2013-08-13 | Power Integrations, Inc. | High quality GaN high-voltage HFETS on silicon |
| EP2722889B1 (fr) * | 2012-10-18 | 2018-03-21 | LG Innotek Co., Ltd. | Diode électroluminescente avec efficacité améliorée grâce à l'étalement de la densité de courant |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001068730A (ja) * | 1999-08-25 | 2001-03-16 | Showa Denko Kk | ＡｌＧａＩｎＰ発光ダイオード |
| JP2004297010A (ja) * | 2003-03-28 | 2004-10-21 | Toyoda Gosei Co Ltd | 半導体結晶の製造方法及び半導体発光素子 |
| JP2006093686A (ja) * | 2004-08-27 | 2006-04-06 | Kyocera Corp | 発光素子およびその製造方法ならびにその発光素子を用いた照明装置 |
| JP2007329382A (ja) * | 2006-06-09 | 2007-12-20 | Mitsubishi Cable Ind Ltd | ＧａＮ系発光ダイオード素子 |
| JP2008207974A (ja) * | 2007-02-23 | 2008-09-11 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物結晶の製造方法 |
| JP2008277430A (ja) * | 2007-04-26 | 2008-11-13 | Matsushita Electric Ind Co Ltd | 窒化物半導体発光素子 |
-
2009
- 2009-11-26 JP JP2010540380A patent/JP5464446B2/ja not_active Expired - Fee Related
- 2009-11-26 WO PCT/JP2009/006406 patent/WO2010061617A1/fr active Application Filing
- 2009-11-30 TW TW98140795A patent/TW201029233A/zh unknown
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001068730A (ja) * | 1999-08-25 | 2001-03-16 | Showa Denko Kk | ＡｌＧａＩｎＰ発光ダイオード |
| JP2004297010A (ja) * | 2003-03-28 | 2004-10-21 | Toyoda Gosei Co Ltd | 半導体結晶の製造方法及び半導体発光素子 |
| JP2006093686A (ja) * | 2004-08-27 | 2006-04-06 | Kyocera Corp | 発光素子およびその製造方法ならびにその発光素子を用いた照明装置 |
| JP2007329382A (ja) * | 2006-06-09 | 2007-12-20 | Mitsubishi Cable Ind Ltd | ＧａＮ系発光ダイオード素子 |
| JP2008207974A (ja) * | 2007-02-23 | 2008-09-11 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物結晶の製造方法 |
| JP2008277430A (ja) * | 2007-04-26 | 2008-11-13 | Matsushita Electric Ind Co Ltd | 窒化物半導体発光素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201029233A (en) | 2010-08-01 |
| JPWO2010061617A1 (ja) | 2012-04-26 |
| WO2010061617A1 (fr) | 2010-06-03 |
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