JP5459896B2 - 配線及び記憶素子の作製方法 - Google Patents

配線及び記憶素子の作製方法 Download PDF

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Publication number
JP5459896B2
JP5459896B2 JP2008040843A JP2008040843A JP5459896B2 JP 5459896 B2 JP5459896 B2 JP 5459896B2 JP 2008040843 A JP2008040843 A JP 2008040843A JP 2008040843 A JP2008040843 A JP 2008040843A JP 5459896 B2 JP5459896 B2 JP 5459896B2
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Japan
Prior art keywords
film
layer
conductive
wiring
substrate
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008040843A
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English (en)
Japanese (ja)
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JP2008252072A (ja
JP2008252072A5 (enExample
Inventor
健輔 吉住
典子 針馬
山田　　智子
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Priority to JP2008040843A priority Critical patent/JP5459896B2/ja
Publication of JP2008252072A publication Critical patent/JP2008252072A/ja
Publication of JP2008252072A5 publication Critical patent/JP2008252072A5/ja
Application granted granted Critical
Publication of JP5459896B2 publication Critical patent/JP5459896B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00095—Interconnects
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
    • H05K3/125—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing by ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0183—Selective deposition
    • B81C2201/0184—Digital lithography, e.g. using an inkjet print-head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01—Tools for processing; Objects used during processing
    • H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
    • H05K2203/013—Inkjet printing, e.g. for printing insulating material or resist
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/08—Treatments involving gases
    • H05K2203/087—Using a reactive gas

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2008040843A 2007-03-05 2008-02-22 配線及び記憶素子の作製方法 Expired - Fee Related JP5459896B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008040843A JP5459896B2 (ja) 2007-03-05 2008-02-22 配線及び記憶素子の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007053712 2007-03-05
JP2007053712 2007-03-05
JP2008040843A JP5459896B2 (ja) 2007-03-05 2008-02-22 配線及び記憶素子の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013232137A Division JP5745597B2 (ja) 2007-03-05 2013-11-08 配線の作製方法、記憶素子の作製方法

Publications (3)

Publication Number Publication Date
JP2008252072A JP2008252072A (ja) 2008-10-16
JP2008252072A5 JP2008252072A5 (enExample) 2011-04-07
JP5459896B2 true JP5459896B2 (ja) 2014-04-02

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JP2008040843A Expired - Fee Related JP5459896B2 (ja) 2007-03-05 2008-02-22 配線及び記憶素子の作製方法
JP2013232137A Expired - Fee Related JP5745597B2 (ja) 2007-03-05 2013-11-08 配線の作製方法、記憶素子の作製方法

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US (1) US8075945B2 (enExample)
JP (2) JP5459896B2 (enExample)
KR (1) KR101439820B1 (enExample)

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JP3480949B2 (ja) 1992-04-17 2003-12-22 三洋電機株式会社 温熱式電気治療器
JP5255870B2 (ja) * 2007-03-26 2013-08-07 株式会社半導体エネルギー研究所 記憶素子の作製方法
US8186051B2 (en) * 2008-03-28 2012-05-29 Intel Corporation Method for fabricating package substrate and die spacer layers having a ceramic backbone
JP2010147180A (ja) * 2008-12-17 2010-07-01 Sumitomo Chemical Co Ltd 有機エレクトロルミネッセンス素子の製造方法
JP2010199285A (ja) * 2009-02-25 2010-09-09 Ricoh Co Ltd 配線基板の製造方法、電子素子および表示装置
ES2453217T3 (es) 2010-12-21 2014-04-04 Agfa-Gevaert Dispersión que contiene nanopartículas metálicas, de óxido de metal o de precursor de metal
TW201319299A (zh) * 2011-09-13 2013-05-16 Applied Materials Inc 用於低溫電漿輔助沉積的活化矽前驅物
EP2608217B1 (en) 2011-12-21 2014-07-16 Agfa-Gevaert A dispersion comprising metallic, metal oxide or metal precursor nanoparticles, a polymeric dispersant and a sintering additive
ES2496440T3 (es) 2011-12-21 2014-09-19 Agfa-Gevaert Dispersión que contiene nanopartículas metálicas, de óxido de metal o de precursor de metal, un dispersante polimérico y un agente térmicamente escindible
HK1203474A1 (en) * 2011-12-22 2015-10-30 Nanoco Technologies Limited Surface modified nanoparticles
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KR20170119747A (ko) 2013-07-04 2017-10-27 아그파-게바에르트 엔.브이. 전도성 금속 층 또는 패턴의 제조 방법
EP2821164A1 (en) 2013-07-04 2015-01-07 Agfa-Gevaert A metallic nanoparticle dispersion
WO2015000937A1 (en) 2013-07-04 2015-01-08 Agfa-Gevaert A metallic nanoparticle dispersion
TWI637899B (zh) * 2015-12-15 2018-10-11 村田製作所股份有限公司 微機電裝置和製造其之方法

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Also Published As

Publication number Publication date
US20080220155A1 (en) 2008-09-11
JP5745597B2 (ja) 2015-07-08
JP2008252072A (ja) 2008-10-16
US8075945B2 (en) 2011-12-13
KR20080081853A (ko) 2008-09-10
KR101439820B1 (ko) 2014-09-12
JP2014027322A (ja) 2014-02-06

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