JP5457037B2 - 基板縁部への不活性ガスの注入 - Google Patents

基板縁部への不活性ガスの注入 Download PDF

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Publication number
JP5457037B2
JP5457037B2 JP2008556370A JP2008556370A JP5457037B2 JP 5457037 B2 JP5457037 B2 JP 5457037B2 JP 2008556370 A JP2008556370 A JP 2008556370A JP 2008556370 A JP2008556370 A JP 2008556370A JP 5457037 B2 JP5457037 B2 JP 5457037B2
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Prior art keywords
gas
substrate
edge
adjustment
substrate support
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Japanese (ja)
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JP2009527921A (ja
JP2009527921A5 (enExample
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ディンドサ・ラジンダー
スリニバサン・ムクンド
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
JP2008556370A 2006-02-21 2007-02-16 基板縁部への不活性ガスの注入 Active JP5457037B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/359,300 2006-02-21
US11/359,300 US8097120B2 (en) 2006-02-21 2006-02-21 Process tuning gas injection from the substrate edge
PCT/US2007/004225 WO2007098071A2 (en) 2006-02-21 2007-02-16 Process tuning gas injection from the substrate edge

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013118462A Division JP2013211586A (ja) 2006-02-21 2013-06-05 基板縁部からの処理調整ガスの注入

Publications (3)

Publication Number Publication Date
JP2009527921A JP2009527921A (ja) 2009-07-30
JP2009527921A5 JP2009527921A5 (enExample) 2010-04-02
JP5457037B2 true JP5457037B2 (ja) 2014-04-02

Family

ID=38426959

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008556370A Active JP5457037B2 (ja) 2006-02-21 2007-02-16 基板縁部への不活性ガスの注入
JP2013118462A Pending JP2013211586A (ja) 2006-02-21 2013-06-05 基板縁部からの処理調整ガスの注入

Family Applications After (1)

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JP2013118462A Pending JP2013211586A (ja) 2006-02-21 2013-06-05 基板縁部からの処理調整ガスの注入

Country Status (7)

Country Link
US (1) US8097120B2 (enExample)
JP (2) JP5457037B2 (enExample)
KR (1) KR101336446B1 (enExample)
CN (1) CN101389788A (enExample)
SG (1) SG170007A1 (enExample)
TW (1) TWI364791B (enExample)
WO (1) WO2007098071A2 (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4584722B2 (ja) * 2005-01-13 2010-11-24 シャープ株式会社 プラズマ処理装置および同装置により製造された半導体素子
US8097120B2 (en) * 2006-02-21 2012-01-17 Lam Research Corporation Process tuning gas injection from the substrate edge
US7572737B1 (en) * 2006-06-30 2009-08-11 Lam Research Corporation Apparatus and methods for adjusting an edge ring potential substrate processing
US20080194112A1 (en) * 2007-02-09 2008-08-14 International Business Machines Corporation Method and system for plasma etching having improved across-wafer etch uniformity
JP5179482B2 (ja) * 2007-05-09 2013-04-10 株式会社アルバック パージガスアセンブリ
KR101437522B1 (ko) * 2007-09-05 2014-09-03 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 반응기 챔버에서 웨이퍼 에지 가스 주입부를 갖는캐소드 라이너
US7832354B2 (en) * 2007-09-05 2010-11-16 Applied Materials, Inc. Cathode liner with wafer edge gas injection in a plasma reactor chamber
US7879250B2 (en) 2007-09-05 2011-02-01 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection
US8721836B2 (en) * 2008-04-22 2014-05-13 Micron Technology, Inc. Plasma processing with preionized and predissociated tuning gases and associated systems and methods
US20110011534A1 (en) * 2009-07-17 2011-01-20 Rajinder Dhindsa Apparatus for adjusting an edge ring potential during substrate processing
KR101092122B1 (ko) * 2010-02-23 2011-12-12 주식회사 디엠에스 에칭 프로파일 제어를 위한 가스 인젝션 시스템
JP2012049376A (ja) * 2010-08-27 2012-03-08 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP5819154B2 (ja) * 2011-10-06 2015-11-18 株式会社日立ハイテクノロジーズ プラズマエッチング装置
US9083182B2 (en) 2011-11-21 2015-07-14 Lam Research Corporation Bypass capacitors for high voltage bias power in the mid frequency RF range
US9508530B2 (en) 2011-11-21 2016-11-29 Lam Research Corporation Plasma processing chamber with flexible symmetric RF return strap
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
US9263240B2 (en) 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
KR101971312B1 (ko) * 2011-11-23 2019-04-22 램 리써치 코포레이션 다중 존 가스 주입 상부 전극 시스템
US20150162169A1 (en) * 2013-12-05 2015-06-11 Taiwan Semiconductor Manufacturing Co., Ltd. Etching apparatus and method
JP6516436B2 (ja) * 2014-10-24 2019-05-22 東京エレクトロン株式会社 成膜装置及び成膜方法
CN107112275B (zh) * 2014-12-19 2020-10-30 应用材料公司 用于基板处理腔室的边缘环
US10410832B2 (en) * 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
KR102641441B1 (ko) * 2016-09-28 2024-02-29 삼성전자주식회사 링 어셈블리 및 이를 포함하는 척 어셈블리
JP6837911B2 (ja) * 2017-05-17 2021-03-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
US10851457B2 (en) * 2017-08-31 2020-12-01 Lam Research Corporation PECVD deposition system for deposition on selective side of the substrate
CN109750279B (zh) * 2017-11-07 2024-11-08 中微半导体设备(上海)股份有限公司 一种用于热化学气相沉积的基片托盘和反应器
CN109600898B (zh) * 2018-12-13 2020-04-17 大连理工大学 一种喷淋式电极及放电系统
KR102695104B1 (ko) 2019-08-16 2024-08-14 램 리써치 코포레이션 웨이퍼 내에서 차동 보우를 보상하기 위한 공간적으로 튜닝 가능한 증착 방법 및 장치
KR102335472B1 (ko) * 2019-09-04 2021-12-07 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN112992637B (zh) * 2019-12-02 2025-06-10 Asmip私人控股有限公司 衬底支撑板、包括它的衬底处理设备以及衬底处理方法
CN112981372B (zh) * 2019-12-12 2024-02-13 Asm Ip私人控股有限公司 衬底支撑板、包括它的衬底处理设备以及衬底处理方法
KR102791334B1 (ko) * 2019-12-31 2025-04-08 삼성전자주식회사 에지 링 및 이를 갖는 기판 처리 장치
WO2021202080A1 (en) * 2020-04-02 2021-10-07 Lam Research Corporation Edge ring for localized delivery of tuning gas
KR102751528B1 (ko) * 2020-09-01 2025-01-07 삼성전자주식회사 플라즈마 공정 장비
WO2022108707A1 (en) * 2020-11-23 2022-05-27 Lam Research Corporation Localized plasma arc prevention via purge ring
JP2022152246A (ja) * 2021-03-29 2022-10-12 株式会社日立ハイテク ウエハ処理装置
CN112992743B (zh) * 2021-05-17 2021-09-17 北京北方华创微电子装备有限公司 半导体工艺腔室及半导体工艺设备
TW202417684A (zh) * 2022-08-31 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基座環總成、反應器系統、及用於氣體注入之方法

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4512283A (en) * 1982-02-01 1985-04-23 Texas Instruments Incorporated Plasma reactor sidewall shield
US4513021A (en) * 1982-02-01 1985-04-23 Texas Instruments Incorporated Plasma reactor with reduced chamber wall deposition
JPS6074626A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd ウエハー処理方法及び装置
US5578532A (en) * 1990-07-16 1996-11-26 Novellus Systems, Inc. Wafer surface protection in a gas deposition process
JP2763222B2 (ja) * 1991-12-13 1998-06-11 三菱電機株式会社 化学気相成長方法ならびにそのための化学気相成長処理システムおよび化学気相成長装置
JP2894658B2 (ja) * 1992-01-17 1999-05-24 株式会社東芝 ドライエッチング方法およびその装置
JP2870719B2 (ja) * 1993-01-29 1999-03-17 東京エレクトロン株式会社 処理装置
DE69432383D1 (de) * 1993-05-27 2003-05-08 Applied Materials Inc Verbesserungen betreffend Substrathalter geeignet für den Gebrauch in Vorrichtungen für die chemische Abscheidung aus der Dampfphase
KR100274754B1 (ko) * 1993-08-18 2000-12-15 히가시 데쓰로 성막장치 및 성막방법
US5498313A (en) * 1993-08-20 1996-03-12 International Business Machines Corp. Symmetrical etching ring with gas control
US5556476A (en) * 1994-02-23 1996-09-17 Applied Materials, Inc. Controlling edge deposition on semiconductor substrates
TW283250B (en) * 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
TW286414B (en) * 1995-07-10 1996-09-21 Watkins Johnson Co Electrostatic chuck assembly
TW356554B (en) * 1995-10-23 1999-04-21 Watkins Johnson Co Gas injection system for semiconductor processing
US5772771A (en) * 1995-12-13 1998-06-30 Applied Materials, Inc. Deposition chamber for improved deposition thickness uniformity
US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US6070551A (en) * 1996-05-13 2000-06-06 Applied Materials, Inc. Deposition chamber and method for depositing low dielectric constant films
US6013155A (en) * 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
KR100524204B1 (ko) * 1998-01-07 2006-01-27 동경 엘렉트론 주식회사 가스 처리장치
US6179924B1 (en) * 1998-04-28 2001-01-30 Applied Materials, Inc. Heater for use in substrate processing apparatus to deposit tungsten
US6040011A (en) * 1998-06-24 2000-03-21 Applied Materials, Inc. Substrate support member with a purge gas channel and pumping system
US6096135A (en) * 1998-07-21 2000-08-01 Applied Materials, Inc. Method and apparatus for reducing contamination of a substrate in a substrate processing system
US6263829B1 (en) * 1999-01-22 2001-07-24 Applied Materials, Inc. Process chamber having improved gas distributor and method of manufacture
JP4283366B2 (ja) * 1999-03-01 2009-06-24 キヤノンアネルバ株式会社 プラズマ処理装置
US6206976B1 (en) * 1999-08-27 2001-03-27 Lucent Technologies Inc. Deposition apparatus and related method with controllable edge exclusion
US6432259B1 (en) * 1999-12-14 2002-08-13 Applied Materials, Inc. Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates
JP2003529926A (ja) * 2000-03-30 2003-10-07 東京エレクトロン株式会社 プラズマ処理システム内への調整可能なガス注入のための方法及び装置
KR100406173B1 (ko) * 2000-06-13 2003-11-19 주식회사 하이닉스반도체 촉매 분사 수단을 구비한 히터 블록
US6666920B1 (en) * 2000-08-09 2003-12-23 Itt Manufacturing Enterprises, Inc. Gas collector for providing an even flow of gasses through a reaction chamber of an epitaxial reactor
US6325855B1 (en) * 2000-08-09 2001-12-04 Itt Manufacturing Enterprises, Inc. Gas collector for epitaxial reactors
JP3741604B2 (ja) * 2000-11-27 2006-02-01 東京エレクトロン株式会社 熱処理装置および熱処理方法
JP4433614B2 (ja) * 2001-01-17 2010-03-17 ソニー株式会社 エッチング装置
US6676760B2 (en) * 2001-08-16 2004-01-13 Appiled Materials, Inc. Process chamber having multiple gas distributors and method
US20030168174A1 (en) * 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
US6897155B2 (en) * 2002-08-14 2005-05-24 Applied Materials, Inc. Method for etching high-aspect-ratio features
US6837967B1 (en) * 2002-11-06 2005-01-04 Lsi Logic Corporation Method and apparatus for cleaning deposited films from the edge of a wafer
JP4108465B2 (ja) * 2002-12-18 2008-06-25 東京エレクトロン株式会社 処理方法及び処理装置
US7323231B2 (en) * 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7410355B2 (en) * 2003-10-31 2008-08-12 Asm International N.V. Method for the heat treatment of substrates
US7022627B2 (en) * 2003-10-31 2006-04-04 Asm International N.V. Method for the heat treatment of substrates
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7879409B2 (en) * 2004-07-23 2011-02-01 Applied Materials, Inc. Repeatability of CVD film deposition during sequential processing of substrates in a deposition chamber
US7217670B2 (en) * 2004-11-22 2007-05-15 Asm International N.V. Dummy substrate for thermal reactor
JP4590363B2 (ja) * 2005-03-16 2010-12-01 日本碍子株式会社 ガス供給部材及びそれを用いた処理装置
US7550381B2 (en) * 2005-07-18 2009-06-23 Applied Materials, Inc. Contact clean by remote plasma and repair of silicide surface
US8097120B2 (en) * 2006-02-21 2012-01-17 Lam Research Corporation Process tuning gas injection from the substrate edge
JP5074741B2 (ja) * 2006-11-10 2012-11-14 株式会社日立ハイテクノロジーズ 真空処理装置
KR100998011B1 (ko) * 2008-05-22 2010-12-03 삼성엘이디 주식회사 화학기상 증착장치

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US20070193688A1 (en) 2007-08-23
JP2009527921A (ja) 2009-07-30
TWI364791B (en) 2012-05-21
WO2007098071A3 (en) 2008-04-24
CN101389788A (zh) 2009-03-18
WO2007098071A2 (en) 2007-08-30
JP2013211586A (ja) 2013-10-10
SG170007A1 (en) 2011-04-29
KR101336446B1 (ko) 2013-12-04
KR20080106413A (ko) 2008-12-05

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