CN101389788A - 从基片边缘注入处理调谐气体 - Google Patents

从基片边缘注入处理调谐气体 Download PDF

Info

Publication number
CN101389788A
CN101389788A CNA2007800062311A CN200780006231A CN101389788A CN 101389788 A CN101389788 A CN 101389788A CN A2007800062311 A CNA2007800062311 A CN A2007800062311A CN 200780006231 A CN200780006231 A CN 200780006231A CN 101389788 A CN101389788 A CN 101389788A
Authority
CN
China
Prior art keywords
gas
substrate
tuning
edge
tuning gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007800062311A
Other languages
English (en)
Chinese (zh)
Inventor
拉金德尔·德辛德萨
穆昆德·斯里尼瓦桑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN101389788A publication Critical patent/CN101389788A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
CNA2007800062311A 2006-02-21 2007-02-16 从基片边缘注入处理调谐气体 Pending CN101389788A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/359,300 US8097120B2 (en) 2006-02-21 2006-02-21 Process tuning gas injection from the substrate edge
US11/359,300 2006-02-21

Publications (1)

Publication Number Publication Date
CN101389788A true CN101389788A (zh) 2009-03-18

Family

ID=38426959

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007800062311A Pending CN101389788A (zh) 2006-02-21 2007-02-16 从基片边缘注入处理调谐气体

Country Status (7)

Country Link
US (1) US8097120B2 (enExample)
JP (2) JP5457037B2 (enExample)
KR (1) KR101336446B1 (enExample)
CN (1) CN101389788A (enExample)
SG (1) SG170007A1 (enExample)
TW (1) TWI364791B (enExample)
WO (1) WO2007098071A2 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107112275A (zh) * 2014-12-19 2017-08-29 应用材料公司 用于基板处理腔室的边缘环
CN109600898A (zh) * 2018-12-13 2019-04-09 大连理工大学 一种喷淋式电极及放电系统
CN109750279A (zh) * 2017-11-07 2019-05-14 中微半导体设备(上海)股份有限公司 一种用于热化学气相沉积的基片托盘和反应器
CN112447485A (zh) * 2019-09-04 2021-03-05 细美事有限公司 用于处理基板的装置和方法
CN112992743A (zh) * 2021-05-17 2021-06-18 北京北方华创微电子装备有限公司 半导体工艺腔室及半导体工艺设备

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4584722B2 (ja) * 2005-01-13 2010-11-24 シャープ株式会社 プラズマ処理装置および同装置により製造された半導体素子
US8097120B2 (en) * 2006-02-21 2012-01-17 Lam Research Corporation Process tuning gas injection from the substrate edge
US7572737B1 (en) * 2006-06-30 2009-08-11 Lam Research Corporation Apparatus and methods for adjusting an edge ring potential substrate processing
US20080194112A1 (en) * 2007-02-09 2008-08-14 International Business Machines Corporation Method and system for plasma etching having improved across-wafer etch uniformity
WO2008139871A1 (ja) * 2007-05-09 2008-11-20 Ulvac, Inc. パージガスアセンブリ
US7832354B2 (en) * 2007-09-05 2010-11-16 Applied Materials, Inc. Cathode liner with wafer edge gas injection in a plasma reactor chamber
US7879250B2 (en) 2007-09-05 2011-02-01 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection
KR101437522B1 (ko) * 2007-09-05 2014-09-03 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 반응기 챔버에서 웨이퍼 에지 가스 주입부를 갖는캐소드 라이너
US8721836B2 (en) * 2008-04-22 2014-05-13 Micron Technology, Inc. Plasma processing with preionized and predissociated tuning gases and associated systems and methods
US20110011534A1 (en) * 2009-07-17 2011-01-20 Rajinder Dhindsa Apparatus for adjusting an edge ring potential during substrate processing
KR101092122B1 (ko) * 2010-02-23 2011-12-12 주식회사 디엠에스 에칭 프로파일 제어를 위한 가스 인젝션 시스템
JP2012049376A (ja) * 2010-08-27 2012-03-08 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP5819154B2 (ja) * 2011-10-06 2015-11-18 株式会社日立ハイテクノロジーズ プラズマエッチング装置
US9083182B2 (en) 2011-11-21 2015-07-14 Lam Research Corporation Bypass capacitors for high voltage bias power in the mid frequency RF range
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
US9263240B2 (en) * 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
CN104024477B (zh) * 2011-11-23 2016-05-18 朗姆研究公司 多区域气体注入上电极系统
WO2013078434A1 (en) 2011-11-24 2013-05-30 Lam Research Corporation Plasma processing chamber with flexible symmetric rf return strap
US20150162169A1 (en) * 2013-12-05 2015-06-11 Taiwan Semiconductor Manufacturing Co., Ltd. Etching apparatus and method
JP6516436B2 (ja) * 2014-10-24 2019-05-22 東京エレクトロン株式会社 成膜装置及び成膜方法
US10410832B2 (en) * 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
KR102641441B1 (ko) * 2016-09-28 2024-02-29 삼성전자주식회사 링 어셈블리 및 이를 포함하는 척 어셈블리
JP6837911B2 (ja) * 2017-05-17 2021-03-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
US10851457B2 (en) 2017-08-31 2020-12-01 Lam Research Corporation PECVD deposition system for deposition on selective side of the substrate
JP2022544221A (ja) 2019-08-16 2022-10-17 ラム リサーチ コーポレーション ウエハ内の様々な反りを補償するために空間を調整する堆積
CN112992637B (zh) * 2019-12-02 2025-06-10 Asmip私人控股有限公司 衬底支撑板、包括它的衬底处理设备以及衬底处理方法
CN112981372B (zh) * 2019-12-12 2024-02-13 Asm Ip私人控股有限公司 衬底支撑板、包括它的衬底处理设备以及衬底处理方法
KR102791334B1 (ko) * 2019-12-31 2025-04-08 삼성전자주식회사 에지 링 및 이를 갖는 기판 처리 장치
JP7668814B2 (ja) * 2020-04-02 2025-04-25 ラム リサーチ コーポレーション 調節ガスの局所供給用エッジリング
KR102751528B1 (ko) * 2020-09-01 2025-01-07 삼성전자주식회사 플라즈마 공정 장비
JP2023550357A (ja) * 2020-11-23 2023-12-01 ラム リサーチ コーポレーション パージリングを介した局所的なプラズマアークの防止
JP2022152246A (ja) * 2021-03-29 2022-10-12 株式会社日立ハイテク ウエハ処理装置
TW202417684A (zh) * 2022-08-31 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基座環總成、反應器系統、及用於氣體注入之方法

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4513021A (en) * 1982-02-01 1985-04-23 Texas Instruments Incorporated Plasma reactor with reduced chamber wall deposition
US4512283A (en) * 1982-02-01 1985-04-23 Texas Instruments Incorporated Plasma reactor sidewall shield
JPS6074626A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd ウエハー処理方法及び装置
US5578532A (en) * 1990-07-16 1996-11-26 Novellus Systems, Inc. Wafer surface protection in a gas deposition process
JP2763222B2 (ja) * 1991-12-13 1998-06-11 三菱電機株式会社 化学気相成長方法ならびにそのための化学気相成長処理システムおよび化学気相成長装置
JP2894658B2 (ja) * 1992-01-17 1999-05-24 株式会社東芝 ドライエッチング方法およびその装置
JP2870719B2 (ja) * 1993-01-29 1999-03-17 東京エレクトロン株式会社 処理装置
EP0628644B1 (en) * 1993-05-27 2003-04-02 Applied Materials, Inc. Improvements in or relating to susceptors suitable for use in chemical vapour deposition devices
KR100274754B1 (ko) * 1993-08-18 2000-12-15 히가시 데쓰로 성막장치 및 성막방법
US5498313A (en) * 1993-08-20 1996-03-12 International Business Machines Corp. Symmetrical etching ring with gas control
US5556476A (en) * 1994-02-23 1996-09-17 Applied Materials, Inc. Controlling edge deposition on semiconductor substrates
TW283250B (en) * 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
US5708556A (en) 1995-07-10 1998-01-13 Watkins Johnson Company Electrostatic chuck assembly
TW356554B (en) 1995-10-23 1999-04-21 Watkins Johnson Co Gas injection system for semiconductor processing
US5772771A (en) * 1995-12-13 1998-06-30 Applied Materials, Inc. Deposition chamber for improved deposition thickness uniformity
US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US6070551A (en) * 1996-05-13 2000-06-06 Applied Materials, Inc. Deposition chamber and method for depositing low dielectric constant films
US6013155A (en) 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
KR100524204B1 (ko) * 1998-01-07 2006-01-27 동경 엘렉트론 주식회사 가스 처리장치
US6179924B1 (en) * 1998-04-28 2001-01-30 Applied Materials, Inc. Heater for use in substrate processing apparatus to deposit tungsten
US6040011A (en) * 1998-06-24 2000-03-21 Applied Materials, Inc. Substrate support member with a purge gas channel and pumping system
US6096135A (en) * 1998-07-21 2000-08-01 Applied Materials, Inc. Method and apparatus for reducing contamination of a substrate in a substrate processing system
US6263829B1 (en) * 1999-01-22 2001-07-24 Applied Materials, Inc. Process chamber having improved gas distributor and method of manufacture
JP4283366B2 (ja) * 1999-03-01 2009-06-24 キヤノンアネルバ株式会社 プラズマ処理装置
US6206976B1 (en) * 1999-08-27 2001-03-27 Lucent Technologies Inc. Deposition apparatus and related method with controllable edge exclusion
US6432259B1 (en) * 1999-12-14 2002-08-13 Applied Materials, Inc. Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates
JP2003529926A (ja) 2000-03-30 2003-10-07 東京エレクトロン株式会社 プラズマ処理システム内への調整可能なガス注入のための方法及び装置
KR100406173B1 (ko) * 2000-06-13 2003-11-19 주식회사 하이닉스반도체 촉매 분사 수단을 구비한 히터 블록
US6666920B1 (en) * 2000-08-09 2003-12-23 Itt Manufacturing Enterprises, Inc. Gas collector for providing an even flow of gasses through a reaction chamber of an epitaxial reactor
US6325855B1 (en) * 2000-08-09 2001-12-04 Itt Manufacturing Enterprises, Inc. Gas collector for epitaxial reactors
JP3741604B2 (ja) * 2000-11-27 2006-02-01 東京エレクトロン株式会社 熱処理装置および熱処理方法
JP4433614B2 (ja) 2001-01-17 2010-03-17 ソニー株式会社 エッチング装置
US6676760B2 (en) * 2001-08-16 2004-01-13 Appiled Materials, Inc. Process chamber having multiple gas distributors and method
US20030168174A1 (en) * 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
US6897155B2 (en) * 2002-08-14 2005-05-24 Applied Materials, Inc. Method for etching high-aspect-ratio features
US6837967B1 (en) 2002-11-06 2005-01-04 Lsi Logic Corporation Method and apparatus for cleaning deposited films from the edge of a wafer
JP4108465B2 (ja) * 2002-12-18 2008-06-25 東京エレクトロン株式会社 処理方法及び処理装置
US7323231B2 (en) * 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7022627B2 (en) * 2003-10-31 2006-04-04 Asm International N.V. Method for the heat treatment of substrates
US7410355B2 (en) * 2003-10-31 2008-08-12 Asm International N.V. Method for the heat treatment of substrates
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7879409B2 (en) * 2004-07-23 2011-02-01 Applied Materials, Inc. Repeatability of CVD film deposition during sequential processing of substrates in a deposition chamber
US7217670B2 (en) * 2004-11-22 2007-05-15 Asm International N.V. Dummy substrate for thermal reactor
JP4590363B2 (ja) * 2005-03-16 2010-12-01 日本碍子株式会社 ガス供給部材及びそれを用いた処理装置
US7550381B2 (en) * 2005-07-18 2009-06-23 Applied Materials, Inc. Contact clean by remote plasma and repair of silicide surface
US8097120B2 (en) * 2006-02-21 2012-01-17 Lam Research Corporation Process tuning gas injection from the substrate edge
JP5074741B2 (ja) * 2006-11-10 2012-11-14 株式会社日立ハイテクノロジーズ 真空処理装置
KR100998011B1 (ko) * 2008-05-22 2010-12-03 삼성엘이디 주식회사 화학기상 증착장치

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107112275A (zh) * 2014-12-19 2017-08-29 应用材料公司 用于基板处理腔室的边缘环
CN107112275B (zh) * 2014-12-19 2020-10-30 应用材料公司 用于基板处理腔室的边缘环
US11417561B2 (en) 2014-12-19 2022-08-16 Applied Materials, Inc. Edge ring for a substrate processing chamber
CN109750279A (zh) * 2017-11-07 2019-05-14 中微半导体设备(上海)股份有限公司 一种用于热化学气相沉积的基片托盘和反应器
CN109600898A (zh) * 2018-12-13 2019-04-09 大连理工大学 一种喷淋式电极及放电系统
CN109600898B (zh) * 2018-12-13 2020-04-17 大连理工大学 一种喷淋式电极及放电系统
CN112447485A (zh) * 2019-09-04 2021-03-05 细美事有限公司 用于处理基板的装置和方法
CN112992743A (zh) * 2021-05-17 2021-06-18 北京北方华创微电子装备有限公司 半导体工艺腔室及半导体工艺设备
CN112992743B (zh) * 2021-05-17 2021-09-17 北京北方华创微电子装备有限公司 半导体工艺腔室及半导体工艺设备

Also Published As

Publication number Publication date
WO2007098071A2 (en) 2007-08-30
TWI364791B (en) 2012-05-21
JP5457037B2 (ja) 2014-04-02
JP2009527921A (ja) 2009-07-30
JP2013211586A (ja) 2013-10-10
US8097120B2 (en) 2012-01-17
TW200805481A (en) 2008-01-16
US20070193688A1 (en) 2007-08-23
WO2007098071A3 (en) 2008-04-24
SG170007A1 (en) 2011-04-29
KR101336446B1 (ko) 2013-12-04
KR20080106413A (ko) 2008-12-05

Similar Documents

Publication Publication Date Title
CN101389788A (zh) 从基片边缘注入处理调谐气体
KR102594473B1 (ko) 내장형 rf 차폐부를 갖는 반도체 기판 지지부들
TWI795589B (zh) 處理微電子工件的方法、以及處理基板的方法
CN100566502C (zh) 半导体等离子处理设备及方法
JP7176860B6 (ja) 前駆体の流れを改善する半導体処理チャンバ
JP7180999B6 (ja) 複数の前駆体の流れのための半導体処理チャンバ
CN100372971C (zh) 分量供给机构及空间分配开关
KR101155837B1 (ko) 기판 프로세싱용 에지 링 배열
US6344420B1 (en) Plasma processing method and plasma processing apparatus
US6887340B2 (en) Etch rate uniformity
CN101557885B (zh) 具有多个电容性和电感性电源的等离子处理反应器
KR102454532B1 (ko) 전기적 아크 및 발광을 방지하고 프로세스 균일도를 개선하기 위한 피처들을 갖는 정전 척
CN102473634B (zh) 等离子体处理装置和等离子体处理方法
US20060196420A1 (en) High density plasma chemical vapor deposition apparatus
CN1639831A (zh) 可调谐的多区气体喷射系统
CN101426949A (zh) 用于等离子蚀刻室的集成的电容性和电感性电源
JPH10189296A (ja) 平行板電極プラズマリアクタ
CN101720501A (zh) 基片处理的方法和装置
JP2000507746A (ja) プロセスガスの均一な分配のためのシャワーヘッド
TWI814291B (zh) 均勻的原位清洗及沉積
US11195696B2 (en) Electron beam generator, plasma processing apparatus having the same and plasma processing method using the same
KR20220156070A (ko) 기판 프로세싱 챔버를 위한 유전체 윈도우
US20250125181A1 (en) Low temperature electrostatic chuck
KR100493684B1 (ko) 고밀도플라즈마화학기상증착장치및그방법
KR100725614B1 (ko) 플라즈마 처리 장치

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20090318