JP5451742B2 - シリコンの選択的ドーピング方法及びそれによって処理されたシリコン基板 - Google Patents

シリコンの選択的ドーピング方法及びそれによって処理されたシリコン基板 Download PDF

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JP5451742B2
JP5451742B2 JP2011504360A JP2011504360A JP5451742B2 JP 5451742 B2 JP5451742 B2 JP 5451742B2 JP 2011504360 A JP2011504360 A JP 2011504360A JP 2011504360 A JP2011504360 A JP 2011504360A JP 5451742 B2 JP5451742 B2 JP 5451742B2
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silicon
silicon substrate
phosphosilicate glass
doping
masking
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JP2011519477A (ja
JP2011519477A5 (https=
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ハベルマン，ディルク
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ゲブリューダー シュミット ゲゼルシャフト ミット ベシュレンクテル ハフツング
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Element Separation (AREA)
JP2011504360A 2008-04-14 2009-04-09 シリコンの選択的ドーピング方法及びそれによって処理されたシリコン基板 Active JP5451742B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008019402A DE102008019402A1 (de) 2008-04-14 2008-04-14 Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat
DE102008019402.6 2008-04-14
PCT/EP2009/002671 WO2009127369A1 (de) 2008-04-14 2009-04-09 Verfahren zur selektiven dotierung von silizium sowie damit behandeltes silizium-substrat

Publications (3)

Publication Number Publication Date
JP2011519477A JP2011519477A (ja) 2011-07-07
JP2011519477A5 JP2011519477A5 (https=) 2012-06-07
JP5451742B2 true JP5451742B2 (ja) 2014-03-26

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JP2011504360A Active JP5451742B2 (ja) 2008-04-14 2009-04-09 シリコンの選択的ドーピング方法及びそれによって処理されたシリコン基板

Country Status (14)

Country Link
US (1) US8399343B2 (https=)
EP (1) EP2277203B1 (https=)
JP (1) JP5451742B2 (https=)
KR (1) KR101577086B1 (https=)
CN (1) CN102007599B (https=)
AT (1) ATE548761T1 (https=)
AU (1) AU2009237980B2 (https=)
CA (1) CA2721298A1 (https=)
DE (1) DE102008019402A1 (https=)
ES (1) ES2383648T3 (https=)
IL (1) IL208679A0 (https=)
MX (1) MX2010011269A (https=)
TW (1) TWI386982B (https=)
WO (1) WO2009127369A1 (https=)

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DE102009051847A1 (de) 2009-10-29 2011-05-19 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zur Behandlung einer Substratoberlfäche eines Substrats
DE102010020175A1 (de) * 2010-05-11 2011-11-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauteil mit defektreicher Schicht zur optimalen Kontaktierung von Emittern sowie Verfahren zu dessen Herstellung
KR20130062775A (ko) 2011-12-05 2013-06-13 엘지전자 주식회사 태양 전지 및 이의 제조 방법
CN103208560A (zh) * 2013-03-22 2013-07-17 江苏荣马新能源有限公司 一种晶体硅太阳能电池石蜡掩膜处理方法
CN105140334B (zh) * 2013-04-01 2017-04-05 南通大学 基于逆扩散的太阳能电池选择性掺杂方法
WO2018063350A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Methods and apparatus for gettering impurities in semiconductors
JP7526019B2 (ja) 2020-03-27 2024-07-31 東京応化工業株式会社 積層体、積層体の製造方法、及び半導体基板の製造方法
CN111916347B (zh) * 2020-08-13 2023-03-21 中国电子科技集团公司第四十四研究所 一种用于soi片的磷扩散掺杂方法

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US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
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Publication number Publication date
KR20110081772A (ko) 2011-07-14
AU2009237980B2 (en) 2013-06-27
DE102008019402A1 (de) 2009-10-15
ATE548761T1 (de) 2012-03-15
EP2277203B1 (de) 2012-03-07
TWI386982B (zh) 2013-02-21
ES2383648T3 (es) 2012-06-25
KR101577086B1 (ko) 2015-12-11
AU2009237980A1 (en) 2009-10-22
TW201003750A (en) 2010-01-16
CN102007599B (zh) 2012-09-26
CN102007599A (zh) 2011-04-06
JP2011519477A (ja) 2011-07-07
WO2009127369A1 (de) 2009-10-22
US8399343B2 (en) 2013-03-19
US20110114168A1 (en) 2011-05-19
MX2010011269A (es) 2010-12-21
IL208679A0 (en) 2010-12-30
CA2721298A1 (en) 2009-10-22
EP2277203A1 (de) 2011-01-26

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