DE102008019402A1 - Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat - Google Patents

Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat Download PDF

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Publication number
DE102008019402A1
DE102008019402A1 DE102008019402A DE102008019402A DE102008019402A1 DE 102008019402 A1 DE102008019402 A1 DE 102008019402A1 DE 102008019402 A DE102008019402 A DE 102008019402A DE 102008019402 A DE102008019402 A DE 102008019402A DE 102008019402 A1 DE102008019402 A1 DE 102008019402A1
Authority
DE
Germany
Prior art keywords
silicon
silicon substrate
phosphorus
phosphosilicate glass
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102008019402A
Other languages
German (de)
English (en)
Inventor
Dirk Habermann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gebrueder Schmid GmbH and Co
Original Assignee
Gebrueder Schmid GmbH and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gebrueder Schmid GmbH and Co filed Critical Gebrueder Schmid GmbH and Co
Priority to DE102008019402A priority Critical patent/DE102008019402A1/de
Priority to KR1020107025363A priority patent/KR101577086B1/ko
Priority to ES09733502T priority patent/ES2383648T3/es
Priority to CN2009801131939A priority patent/CN102007599B/zh
Priority to AT09733502T priority patent/ATE548761T1/de
Priority to EP09733502A priority patent/EP2277203B1/de
Priority to MX2010011269A priority patent/MX2010011269A/es
Priority to CA2721298A priority patent/CA2721298A1/en
Priority to AU2009237980A priority patent/AU2009237980B2/en
Priority to PCT/EP2009/002671 priority patent/WO2009127369A1/de
Priority to JP2011504360A priority patent/JP5451742B2/ja
Priority to TW098112336A priority patent/TWI386982B/zh
Publication of DE102008019402A1 publication Critical patent/DE102008019402A1/de
Priority to IL208679A priority patent/IL208679A0/en
Priority to US12/903,804 priority patent/US8399343B2/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Element Separation (AREA)
DE102008019402A 2008-04-14 2008-04-14 Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat Withdrawn DE102008019402A1 (de)

Priority Applications (14)

Application Number Priority Date Filing Date Title
DE102008019402A DE102008019402A1 (de) 2008-04-14 2008-04-14 Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat
CA2721298A CA2721298A1 (en) 2008-04-14 2009-04-09 Method for the selective doping of silicon and silicon substrate treated therewith
AU2009237980A AU2009237980B2 (en) 2008-04-14 2009-04-09 Method for the selective doping of silicon and silicon substrate treated therewith
CN2009801131939A CN102007599B (zh) 2008-04-14 2009-04-09 用于对硅进行选择性掺杂的方法以及使用该方法处理的硅衬底
AT09733502T ATE548761T1 (de) 2008-04-14 2009-04-09 Verfahren zur selektiven dotierung von silizium
EP09733502A EP2277203B1 (de) 2008-04-14 2009-04-09 Verfahren zur selektiven dotierung von silizium
MX2010011269A MX2010011269A (es) 2008-04-14 2009-04-09 Procedimiento para la dotacion selectiva de silicio y sustrato de silicio tratado con dicho procedimiento.
KR1020107025363A KR101577086B1 (ko) 2008-04-14 2009-04-09 실리콘의 선택적인 도핑 방법 및 이 방법으로 처리된 실리콘 기판
ES09733502T ES2383648T3 (es) 2008-04-14 2009-04-09 Procedimiento para la dotación selectiva de silicio
PCT/EP2009/002671 WO2009127369A1 (de) 2008-04-14 2009-04-09 Verfahren zur selektiven dotierung von silizium sowie damit behandeltes silizium-substrat
JP2011504360A JP5451742B2 (ja) 2008-04-14 2009-04-09 シリコンの選択的ドーピング方法及びそれによって処理されたシリコン基板
TW098112336A TWI386982B (zh) 2008-04-14 2009-04-14 矽之選擇性摻雜方法及使用該方法處理之矽基材
IL208679A IL208679A0 (en) 2008-04-14 2010-10-13 Method for the selective doping of silicon and silicon substrate treated therewith
US12/903,804 US8399343B2 (en) 2008-04-14 2010-10-13 Method for the selective doping of silicon and silicon substrate treated therewith

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008019402A DE102008019402A1 (de) 2008-04-14 2008-04-14 Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat

Publications (1)

Publication Number Publication Date
DE102008019402A1 true DE102008019402A1 (de) 2009-10-15

Family

ID=40902842

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102008019402A Withdrawn DE102008019402A1 (de) 2008-04-14 2008-04-14 Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat

Country Status (14)

Country Link
US (1) US8399343B2 (https=)
EP (1) EP2277203B1 (https=)
JP (1) JP5451742B2 (https=)
KR (1) KR101577086B1 (https=)
CN (1) CN102007599B (https=)
AT (1) ATE548761T1 (https=)
AU (1) AU2009237980B2 (https=)
CA (1) CA2721298A1 (https=)
DE (1) DE102008019402A1 (https=)
ES (1) ES2383648T3 (https=)
IL (1) IL208679A0 (https=)
MX (1) MX2010011269A (https=)
TW (1) TWI386982B (https=)
WO (1) WO2009127369A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011051356A1 (de) 2009-10-29 2011-05-05 Gebr. Schmid Gmbh & Co. Verfahren und vorrichtung zur behandlung einer substratoberfläche eines substrats
CN111916347A (zh) * 2020-08-13 2020-11-10 中国电子科技集团公司第四十四研究所 一种用于soi片的磷扩散掺杂方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2000999C2 (nl) * 2007-11-13 2009-05-14 Stichting Energie Werkwijze voor het fabriceren van kristallijn silicium zonnecellen met gebruikmaking van co-diffusie van boor en fosfor.
DE102010020175A1 (de) * 2010-05-11 2011-11-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauteil mit defektreicher Schicht zur optimalen Kontaktierung von Emittern sowie Verfahren zu dessen Herstellung
KR20130062775A (ko) 2011-12-05 2013-06-13 엘지전자 주식회사 태양 전지 및 이의 제조 방법
CN103208560A (zh) * 2013-03-22 2013-07-17 江苏荣马新能源有限公司 一种晶体硅太阳能电池石蜡掩膜处理方法
CN105140334B (zh) * 2013-04-01 2017-04-05 南通大学 基于逆扩散的太阳能电池选择性掺杂方法
WO2018063350A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Methods and apparatus for gettering impurities in semiconductors
JP7526019B2 (ja) 2020-03-27 2024-07-31 東京応化工業株式会社 積層体、積層体の製造方法、及び半導体基板の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5871591A (en) 1996-11-01 1999-02-16 Sandia Corporation Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process
DE19910816A1 (de) * 1999-03-11 2000-10-05 Merck Patent Gmbh Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern
US20040242019A1 (en) * 2001-10-10 2004-12-02 Sylke Klein Combined etching and doping substances

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE627302A (https=) 1962-01-19
US3200019A (en) * 1962-01-19 1965-08-10 Rca Corp Method for making a semiconductor device
US4070689A (en) * 1975-12-31 1978-01-24 Motorola Inc. Semiconductor solar energy device
DE2754833A1 (de) * 1977-12-09 1979-06-13 Ibm Deutschland Phosphordiffusionsverfahren fuer halbleiteranwendungen
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
US4478879A (en) * 1983-02-10 1984-10-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Screen printed interdigitated back contact solar cell
JPS6215864A (ja) * 1985-07-15 1987-01-24 Hitachi Ltd 太陽電池の製造方法
US5013396A (en) * 1987-06-01 1991-05-07 The Regents Of The University Of Michigan Method of making an ultraminiature pressure sensor
DE4217428A1 (de) * 1991-12-09 1993-06-17 Deutsche Aerospace Hochleistungs-solarzellenstruktur
US5543333A (en) * 1993-09-30 1996-08-06 Siemens Solar Gmbh Method for manufacturing a solar cell having combined metallization
DE19508712C2 (de) * 1995-03-10 1997-08-07 Siemens Solar Gmbh Solarzelle mit Back-Surface-Field und Verfahren zur Herstellung
DE19534574C2 (de) * 1995-09-18 1997-12-18 Fraunhofer Ges Forschung Dotierverfahren zur Herstellung von Homoübergängen in Halbleitersubstraten
JPH11512886A (ja) * 1995-10-05 1999-11-02 エバラ・ソーラー・インコーポレーテッド 自己整列的に部分的に深く拡散したエミッタの太陽電池
US6552414B1 (en) * 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
JP2000183379A (ja) 1998-12-11 2000-06-30 Sanyo Electric Co Ltd 太陽電池の製造方法
NL1012961C2 (nl) * 1999-09-02 2001-03-05 Stichting Energie Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
JP2004281569A (ja) 2003-03-13 2004-10-07 Kyocera Corp 太陽電池素子の製造方法
JP4393938B2 (ja) * 2004-07-16 2010-01-06 信越化学工業株式会社 電極材料及び太陽電池、並びに太陽電池の製造方法
JP2006310368A (ja) 2005-04-26 2006-11-09 Shin Etsu Handotai Co Ltd 太陽電池の製造方法及び太陽電池
JP4481869B2 (ja) 2005-04-26 2010-06-16 信越半導体株式会社 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法
AU2006335142B2 (en) * 2005-12-21 2011-09-22 Sunpower Corporation Back side contact solar cell structures and fabrication processes
KR101181820B1 (ko) * 2005-12-29 2012-09-11 삼성에스디아이 주식회사 태양 전지의 제조 방법
DE102006003283A1 (de) * 2006-01-23 2007-07-26 Gp Solar Gmbh Verfahren zur Herstellung eines Halbleiterbauelements mit unterschiedlich stark dotierten Bereichen

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5871591A (en) 1996-11-01 1999-02-16 Sandia Corporation Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process
DE19910816A1 (de) * 1999-03-11 2000-10-05 Merck Patent Gmbh Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern
US20040242019A1 (en) * 2001-10-10 2004-12-02 Sylke Klein Combined etching and doping substances

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011051356A1 (de) 2009-10-29 2011-05-05 Gebr. Schmid Gmbh & Co. Verfahren und vorrichtung zur behandlung einer substratoberfläche eines substrats
DE102009051847A1 (de) 2009-10-29 2011-05-19 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zur Behandlung einer Substratoberlfäche eines Substrats
CN111916347A (zh) * 2020-08-13 2020-11-10 中国电子科技集团公司第四十四研究所 一种用于soi片的磷扩散掺杂方法
CN111916347B (zh) * 2020-08-13 2023-03-21 中国电子科技集团公司第四十四研究所 一种用于soi片的磷扩散掺杂方法

Also Published As

Publication number Publication date
KR20110081772A (ko) 2011-07-14
JP5451742B2 (ja) 2014-03-26
AU2009237980B2 (en) 2013-06-27
ATE548761T1 (de) 2012-03-15
EP2277203B1 (de) 2012-03-07
TWI386982B (zh) 2013-02-21
ES2383648T3 (es) 2012-06-25
KR101577086B1 (ko) 2015-12-11
AU2009237980A1 (en) 2009-10-22
TW201003750A (en) 2010-01-16
CN102007599B (zh) 2012-09-26
CN102007599A (zh) 2011-04-06
JP2011519477A (ja) 2011-07-07
WO2009127369A1 (de) 2009-10-22
US8399343B2 (en) 2013-03-19
US20110114168A1 (en) 2011-05-19
MX2010011269A (es) 2010-12-21
IL208679A0 (en) 2010-12-30
CA2721298A1 (en) 2009-10-22
EP2277203A1 (de) 2011-01-26

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Effective date: 20120202

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Effective date: 20131101