AU2009237980B2 - Method for the selective doping of silicon and silicon substrate treated therewith - Google Patents

Method for the selective doping of silicon and silicon substrate treated therewith Download PDF

Info

Publication number
AU2009237980B2
AU2009237980B2 AU2009237980A AU2009237980A AU2009237980B2 AU 2009237980 B2 AU2009237980 B2 AU 2009237980B2 AU 2009237980 A AU2009237980 A AU 2009237980A AU 2009237980 A AU2009237980 A AU 2009237980A AU 2009237980 B2 AU2009237980 B2 AU 2009237980B2
Authority
AU
Australia
Prior art keywords
silicon
silicon substrate
phosphosilicate glass
doping
masking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU2009237980A
Other languages
English (en)
Other versions
AU2009237980A1 (en
Inventor
Dirk Habermann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gebrueder Schmid GmbH and Co
Original Assignee
Gebrueder Schmid GmbH and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gebrueder Schmid GmbH and Co filed Critical Gebrueder Schmid GmbH and Co
Publication of AU2009237980A1 publication Critical patent/AU2009237980A1/en
Application granted granted Critical
Publication of AU2009237980B2 publication Critical patent/AU2009237980B2/en
Ceased legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Element Separation (AREA)
AU2009237980A 2008-04-14 2009-04-09 Method for the selective doping of silicon and silicon substrate treated therewith Ceased AU2009237980B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008019402A DE102008019402A1 (de) 2008-04-14 2008-04-14 Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat
DE102008019402.6 2008-04-14
PCT/EP2009/002671 WO2009127369A1 (de) 2008-04-14 2009-04-09 Verfahren zur selektiven dotierung von silizium sowie damit behandeltes silizium-substrat

Publications (2)

Publication Number Publication Date
AU2009237980A1 AU2009237980A1 (en) 2009-10-22
AU2009237980B2 true AU2009237980B2 (en) 2013-06-27

Family

ID=40902842

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2009237980A Ceased AU2009237980B2 (en) 2008-04-14 2009-04-09 Method for the selective doping of silicon and silicon substrate treated therewith

Country Status (14)

Country Link
US (1) US8399343B2 (https=)
EP (1) EP2277203B1 (https=)
JP (1) JP5451742B2 (https=)
KR (1) KR101577086B1 (https=)
CN (1) CN102007599B (https=)
AT (1) ATE548761T1 (https=)
AU (1) AU2009237980B2 (https=)
CA (1) CA2721298A1 (https=)
DE (1) DE102008019402A1 (https=)
ES (1) ES2383648T3 (https=)
IL (1) IL208679A0 (https=)
MX (1) MX2010011269A (https=)
TW (1) TWI386982B (https=)
WO (1) WO2009127369A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2000999C2 (nl) * 2007-11-13 2009-05-14 Stichting Energie Werkwijze voor het fabriceren van kristallijn silicium zonnecellen met gebruikmaking van co-diffusie van boor en fosfor.
DE102009051847A1 (de) 2009-10-29 2011-05-19 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zur Behandlung einer Substratoberlfäche eines Substrats
DE102010020175A1 (de) * 2010-05-11 2011-11-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauteil mit defektreicher Schicht zur optimalen Kontaktierung von Emittern sowie Verfahren zu dessen Herstellung
KR20130062775A (ko) 2011-12-05 2013-06-13 엘지전자 주식회사 태양 전지 및 이의 제조 방법
CN103208560A (zh) * 2013-03-22 2013-07-17 江苏荣马新能源有限公司 一种晶体硅太阳能电池石蜡掩膜处理方法
CN105140334B (zh) * 2013-04-01 2017-04-05 南通大学 基于逆扩散的太阳能电池选择性掺杂方法
WO2018063350A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Methods and apparatus for gettering impurities in semiconductors
JP7526019B2 (ja) 2020-03-27 2024-07-31 東京応化工業株式会社 積層体、積層体の製造方法、及び半導体基板の製造方法
CN111916347B (zh) * 2020-08-13 2023-03-21 中国电子科技集团公司第四十四研究所 一种用于soi片的磷扩散掺杂方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030134469A1 (en) * 1996-12-24 2003-07-17 Imec Vzw, A Research Center In The Country Of Belgium Semiconductor device with selectively diffused regions

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE627302A (https=) 1962-01-19
US3200019A (en) * 1962-01-19 1965-08-10 Rca Corp Method for making a semiconductor device
US4070689A (en) * 1975-12-31 1978-01-24 Motorola Inc. Semiconductor solar energy device
DE2754833A1 (de) * 1977-12-09 1979-06-13 Ibm Deutschland Phosphordiffusionsverfahren fuer halbleiteranwendungen
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
US4478879A (en) * 1983-02-10 1984-10-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Screen printed interdigitated back contact solar cell
JPS6215864A (ja) * 1985-07-15 1987-01-24 Hitachi Ltd 太陽電池の製造方法
US5013396A (en) * 1987-06-01 1991-05-07 The Regents Of The University Of Michigan Method of making an ultraminiature pressure sensor
DE4217428A1 (de) * 1991-12-09 1993-06-17 Deutsche Aerospace Hochleistungs-solarzellenstruktur
US5543333A (en) * 1993-09-30 1996-08-06 Siemens Solar Gmbh Method for manufacturing a solar cell having combined metallization
DE19508712C2 (de) * 1995-03-10 1997-08-07 Siemens Solar Gmbh Solarzelle mit Back-Surface-Field und Verfahren zur Herstellung
DE19534574C2 (de) * 1995-09-18 1997-12-18 Fraunhofer Ges Forschung Dotierverfahren zur Herstellung von Homoübergängen in Halbleitersubstraten
JPH11512886A (ja) * 1995-10-05 1999-11-02 エバラ・ソーラー・インコーポレーテッド 自己整列的に部分的に深く拡散したエミッタの太陽電池
US5871591A (en) 1996-11-01 1999-02-16 Sandia Corporation Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process
JP2000183379A (ja) 1998-12-11 2000-06-30 Sanyo Electric Co Ltd 太陽電池の製造方法
DE19910816A1 (de) 1999-03-11 2000-10-05 Merck Patent Gmbh Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern
NL1012961C2 (nl) * 1999-09-02 2001-03-05 Stichting Energie Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
DE10150040A1 (de) * 2001-10-10 2003-04-17 Merck Patent Gmbh Kombinierte Ätz- und Dotiermedien
JP2004281569A (ja) 2003-03-13 2004-10-07 Kyocera Corp 太陽電池素子の製造方法
JP4393938B2 (ja) * 2004-07-16 2010-01-06 信越化学工業株式会社 電極材料及び太陽電池、並びに太陽電池の製造方法
JP2006310368A (ja) 2005-04-26 2006-11-09 Shin Etsu Handotai Co Ltd 太陽電池の製造方法及び太陽電池
JP4481869B2 (ja) 2005-04-26 2010-06-16 信越半導体株式会社 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法
AU2006335142B2 (en) * 2005-12-21 2011-09-22 Sunpower Corporation Back side contact solar cell structures and fabrication processes
KR101181820B1 (ko) * 2005-12-29 2012-09-11 삼성에스디아이 주식회사 태양 전지의 제조 방법
DE102006003283A1 (de) * 2006-01-23 2007-07-26 Gp Solar Gmbh Verfahren zur Herstellung eines Halbleiterbauelements mit unterschiedlich stark dotierten Bereichen

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030134469A1 (en) * 1996-12-24 2003-07-17 Imec Vzw, A Research Center In The Country Of Belgium Semiconductor device with selectively diffused regions

Also Published As

Publication number Publication date
KR20110081772A (ko) 2011-07-14
JP5451742B2 (ja) 2014-03-26
DE102008019402A1 (de) 2009-10-15
ATE548761T1 (de) 2012-03-15
EP2277203B1 (de) 2012-03-07
TWI386982B (zh) 2013-02-21
ES2383648T3 (es) 2012-06-25
KR101577086B1 (ko) 2015-12-11
AU2009237980A1 (en) 2009-10-22
TW201003750A (en) 2010-01-16
CN102007599B (zh) 2012-09-26
CN102007599A (zh) 2011-04-06
JP2011519477A (ja) 2011-07-07
WO2009127369A1 (de) 2009-10-22
US8399343B2 (en) 2013-03-19
US20110114168A1 (en) 2011-05-19
MX2010011269A (es) 2010-12-21
IL208679A0 (en) 2010-12-30
CA2721298A1 (en) 2009-10-22
EP2277203A1 (de) 2011-01-26

Similar Documents

Publication Publication Date Title
AU2009237980B2 (en) Method for the selective doping of silicon and silicon substrate treated therewith
CN101919070B (zh) 通过硼和磷的共扩散制造晶体硅太阳能电池的方法
JP4657068B2 (ja) 裏面接合型太陽電池の製造方法
CN103843159B (zh) 用于在硅衬底中形成扩散区的方法
JP2012114452A (ja) 裏面電極型太陽電池構造及びその製造プロセス
WO2009065066A1 (en) Method of forming backside point contact structures for silicon solar cells
KR20080098062A (ko) 태양전지 마킹방법 및 태양전지
US20120138138A1 (en) Solar cells with back side contacting and also method for production thereof
EP2279526A1 (en) Methods to pattern diffusion layers in solar cells and solar cells made by such methods
CN102449738B (zh) 用于制造具有选择性发射极的太阳能电池的方法
US20110100443A1 (en) Photovoltaic solar cell device manufacture
JP2011519477A5 (https=)
CN101308786B (zh) 半导体器件的离子注入方法
CN104022188B (zh) 太阳能电池局域掺杂方法
KR20110020062A (ko) 플라즈마 도핑과 확산을 이용한 후면접합 태양전지의 제조방법 및 그 태양전지
WO2011014068A1 (en) Photovoltaic cell with a selective emitter and method for making the same
US20140273330A1 (en) Method of forming single side textured semiconductor workpieces
JP3007734B2 (ja) 太陽電池の製造方法
TWI380464B (en) Method of manufacturing crystalline silicon solar cells using co diffusion of boron and phosphorus
CN116885049A (zh) 一种激光掺杂方法及TOPCon太阳能电池
Doll et al. Improved edge isolation of solar cells applying readily dispensable etching paste
Grebel et al. Laser-induced etched grating on InP: thin-cell configuration
JP2013172067A (ja) 薄膜太陽電池用基板、それを含む薄膜太陽電池、薄膜太陽電池用基板の製造方法、および、薄膜太陽電池の製造方法

Legal Events

Date Code Title Description
FGA Letters patent sealed or granted (standard patent)
MK14 Patent ceased section 143(a) (annual fees not paid) or expired