JP5449958B2 - 半導体装置と接続構造及びその製造方法 - Google Patents

半導体装置と接続構造及びその製造方法 Download PDF

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Publication number
JP5449958B2
JP5449958B2 JP2009225906A JP2009225906A JP5449958B2 JP 5449958 B2 JP5449958 B2 JP 5449958B2 JP 2009225906 A JP2009225906 A JP 2009225906A JP 2009225906 A JP2009225906 A JP 2009225906A JP 5449958 B2 JP5449958 B2 JP 5449958B2
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Prior art keywords
thermal expansion
semiconductor device
semiconductor chip
low thermal
expansion plate
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JP2009225906A
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Japanese (ja)
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JP2011077225A (ja
JP2011077225A5 (enExample
Inventor
良一 梶原
和利 伊藤
成久 元脇
聡 松吉
真二 平光
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Hitachi Ltd
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Hitachi Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
JP2009225906A 2009-09-30 2009-09-30 半導体装置と接続構造及びその製造方法 Expired - Fee Related JP5449958B2 (ja)

Priority Applications (1)

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JP2009225906A JP5449958B2 (ja) 2009-09-30 2009-09-30 半導体装置と接続構造及びその製造方法

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JP2009225906A JP5449958B2 (ja) 2009-09-30 2009-09-30 半導体装置と接続構造及びその製造方法

Related Child Applications (1)

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JP2013209798A Division JP2014003339A (ja) 2013-10-07 2013-10-07 半導体装置と接続構造及びその製造方法

Publications (3)

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JP2011077225A JP2011077225A (ja) 2011-04-14
JP2011077225A5 JP2011077225A5 (enExample) 2012-05-31
JP5449958B2 true JP5449958B2 (ja) 2014-03-19

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107175433A (zh) * 2017-04-19 2017-09-19 天津大学 一种低温烧结的锡掺杂纳米银焊膏的制备方法
DE112017000426T5 (de) 2016-01-19 2018-10-11 Mitsubishi Electric Corporation Leistungshalbleitervorrichtung und verfahren zum herstellen einer leistungshalbleitervorrichtung

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011165871A (ja) 2010-02-09 2011-08-25 Denso Corp 電子装置およびその製造方法
NL2005112C2 (en) 2010-07-19 2012-01-23 Univ Leiden Process to prepare metal nanoparticles or metal oxide nanoparticles.
WO2014080449A1 (ja) 2012-11-20 2014-05-30 トヨタ自動車株式会社 半導体装置
JP6026900B2 (ja) * 2013-01-30 2016-11-16 京セラ株式会社 電子部品収納用パッケージおよびそれを用いた電子装置
JP6168586B2 (ja) * 2013-02-15 2017-07-26 国立研究開発法人産業技術総合研究所 接合方法及び半導体モジュールの製造方法
WO2014129626A1 (ja) 2013-02-22 2014-08-28 古河電気工業株式会社 接続構造体、及び半導体装置
CN109643661B (zh) * 2016-08-05 2022-09-09 三菱电机株式会社 功率半导体装置
WO2018151313A1 (ja) 2017-02-20 2018-08-23 積水化学工業株式会社 焼結材料、接続構造体、複合粒子、接合用組成物及び焼結材料の製造方法
KR101892849B1 (ko) 2017-03-02 2018-08-28 삼성전기주식회사 전자 부품
CN108231703B (zh) * 2017-12-11 2020-02-07 全球能源互联网研究院有限公司 一种功率器件模组及其制备方法
JP7092496B2 (ja) * 2017-12-22 2022-06-28 晶呈科技股▲分▼有限公司 垂直型発光ダイオードダイの構造およびその製造方法
US20220293543A1 (en) * 2019-10-25 2022-09-15 Dic Corporation Electrically conductive pillar, bonding structure, electronic device, and method for manufacturing electrically conductive pillar
JP7553194B2 (ja) 2020-12-23 2024-09-18 ミネベアパワーデバイス株式会社 半導体装置およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08167625A (ja) * 1994-12-14 1996-06-25 Hitachi Ltd 圧接型半導体装置の製造法
JP4275005B2 (ja) * 2004-05-24 2009-06-10 株式会社日立製作所 半導体装置
JP5123633B2 (ja) * 2007-10-10 2013-01-23 ルネサスエレクトロニクス株式会社 半導体装置および接続材料

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112017000426T5 (de) 2016-01-19 2018-10-11 Mitsubishi Electric Corporation Leistungshalbleitervorrichtung und verfahren zum herstellen einer leistungshalbleitervorrichtung
US10727167B2 (en) 2016-01-19 2020-07-28 Mitsubishi Electric Corporation Power semiconductor device and method for manufacturing power semiconductor device
DE112017000426B4 (de) 2016-01-19 2024-12-12 Mitsubishi Electric Corporation Leistungshalbleitervorrichtung und verfahren zum herstellen einer leistungshalbleitervorrichtung
CN107175433A (zh) * 2017-04-19 2017-09-19 天津大学 一种低温烧结的锡掺杂纳米银焊膏的制备方法

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