JP5448393B2

JP5448393B2 - Stacked semiconductor package and stacked semiconductor device

Info

Publication number: JP5448393B2
Application number: JP2008217895A
Authority: JP
Inventors: 正尚株元
Original assignee: Kyocera Corp
Current assignee: Kyocera Corp
Priority date: 2008-08-27
Filing date: 2008-08-27
Publication date: 2014-03-19
Anticipated expiration: 2028-08-27
Also published as: JP2010056202A

Description

本発明は、積層型半導体パッケージおよび、これを有する積層型半導体装置に関するものである。
The present invention is a stacked semiconductor package and to a stacked type semiconductor device having the same.

近年、電子機器の小型化や高機能化に伴う高集積化に対応して、半導体素子をはじめとする電子部品が高密度に搭載された半導体パッケージに関する開発が活発に行なわれている。例えば、グリッド状にランドを持つＢＧＡ(Ball Grid Array)パッケージやＣＳＰ(Chip Scale Package)が採用されている。また更なる高密度化に対応するために、複数の半導体パッケージを上下に積み重ねて一体的に積層したＰＯＰ(Package On Package)と呼ばれる積層型半導体パッケージが使用されるようになってきている。 2. Description of the Related Art In recent years, development of a semiconductor package in which electronic components such as semiconductor elements are mounted at high density has been actively carried out in response to high integration due to miniaturization and high functionality of electronic devices. For example, a BGA (Ball Grid Array) package or CSP (Chip Scale Package) having lands in a grid shape is employed. In order to cope with higher density, a stacked type semiconductor package called POP (Package On Package) in which a plurality of semiconductor packages are stacked one above the other and integrated is increasingly used.

しかしながら、ＰＯＰ構造は半導体素子を実装した半導体パッケージが３次元的に接続されるので、上層に存在するパッケージに実装された半導体素子ほど、下層の半導体パッケージを介して接続されるために電源供給線路の接続点が多くなり、接続距離も長くなる。従って、電源供給経路のインダクタンスが大きくなり、電源バウンスが発生して、安定した信号品質が保てなくなってしまう。 However, in the POP structure, the semiconductor package on which the semiconductor element is mounted is three-dimensionally connected, so that the semiconductor element mounted on the package existing in the upper layer is connected via the lower-layer semiconductor package. The number of connection points increases and the connection distance also increases. Therefore, the inductance of the power supply path is increased, power bounce occurs, and stable signal quality cannot be maintained.

ここで、電源バウンスとは上記インダクタンス成分により逆起電圧が生じ、電源供給線路の電圧が変動することである。この解決法として、２層目の半導体パッケージの裏面に１層目の半導体パッケージと接合する半田ボール群と、プリント配線基板と直接接合する電源用のはんだ群とを設けることにより、２層目の半導体パッケージの電源供給経路を簡素化する方法が提案されている（例えば、特許文献１参照）。
特開２００６−２９５１３６号公報 Here, the power bounce means that a back electromotive voltage is generated by the inductance component and the voltage of the power supply line fluctuates. As a solution to this problem, by providing a solder ball group to be bonded to the first layer semiconductor package and a power supply solder group to be directly bonded to the printed wiring board on the back surface of the second layer semiconductor package, A method for simplifying a power supply path of a semiconductor package has been proposed (see, for example, Patent Document 1).
JP 2006-295136 A

しかしながら、上記従来の方法は、プリント配線基板と直接接合する半田群を設ける必要があることから、１層目の半導体パッケージよりも２層目の半導体パッケージのサイズが大きくなってしまい、積層型半導体パッケージ全体の実装面積が大きくなるという問題がある。 However, in the above conventional method, since it is necessary to provide a solder group that is directly bonded to the printed wiring board, the size of the second-layer semiconductor package becomes larger than the first-layer semiconductor package. There is a problem that the mounting area of the entire package becomes large.

よって、実装面積を大きくすることなく、電源バウンスを減少させ、安定した信号品質を供給する積層型半導体パッケージが求められている。 Therefore, there is a need for a stacked semiconductor package that reduces power supply bounce and provides stable signal quality without increasing the mounting area.

本発明の一つの態様によれば、積層型半導体パッケージは、第１半導体パッケージと、該第１半導体パッケージに積層された第２半導体パッケージと、第１半導体パッケージと第２半導体パッケージとの間に設けられ、第１半導体パッケージおよび第２半導体パッケージに接続されるコンデンサとを有し、コンデンサは、対向する平板状の第１導体および第２導体からなる少なくとも１つの導体対と、第１導体から該第１導体と同一平面上にそれぞれ延在するとともに少なくとも一部同士が第１導体を挟んで対向する第１端子部および第２端子部と、第２導体から該第２導体と同一平面上にそれぞれ延在するとともに少なくとも一部同士が第２導体を挟んで対向する第３端子部および第４端子部とを有し、第１端子部および第３端子部は、第２半導体パッケージに接続され、第２端子部および第４端子部は、第１半導体パッケージに接続される。この積層型半導体パッケージを、第１積層型半導体パッケージという。また、第１積層型半導体パッケージにおいて、コンデンサにおける第１導体および第２導体はそれぞれ四角形状であり、第１端子部および第２端子部は、第１導体の対向する２辺の中央部からそれぞれ延在し、第３端子部および第４端子部は、第２導体の対向する２辺の中央部からそれぞれ延在している。この積層型半導体パッケージを、第２積層型半導体パッケージという。また、第２積層型半導体パッケージにおいて、コンデンサにおける導体対を第１導体と第２導体の対向方向に平面透視したときに、第１端子部と第３端子部は一部のみ重複し、第２端子部と第４端子部は一部のみ重複している。この積層型半導体パッケージを、第３積層型半導体パッケージという。
According to one aspect of the present invention, a stacked semiconductor package includes a first semiconductor package, a second semiconductor package stacked on the first semiconductor package, and the first semiconductor package and the second semiconductor package. A capacitor connected to the first semiconductor package and the second semiconductor package, wherein the capacitor is composed of at least one conductor pair composed of opposing first and second flat plate conductors, and a first conductor. A first terminal portion and a second terminal portion that extend on the same plane as the first conductor and at least partially face each other across the first conductor, and from the second conductor on the same plane as the second conductor Each of the first terminal portion and the third terminal portion has a third terminal portion and a fourth terminal portion that face each other with the second conductor interposed therebetween. Connected to the semiconductor package, the second terminal portion and the fourth terminal portions are connected to the first semiconductor package. This stacked semiconductor package is referred to as a first stacked semiconductor package. Further, in the first stacked semiconductor package, the first conductor and the second conductor in the capacitor are each in a quadrangular shape, and the first terminal portion and the second terminal portion are respectively from the central portions of the two opposite sides of the first conductor The third terminal portion and the fourth terminal portion extend from the central portions of the two opposite sides of the second conductor, respectively. This stacked semiconductor package is referred to as a second stacked semiconductor package. Further, in the second stacked semiconductor package, when the conductor pair in the capacitor is seen in a plan view in the opposing direction of the first conductor and the second conductor, the first terminal portion and the third terminal portion partially overlap, Only a part of the terminal portion and the fourth terminal portion overlap. This stacked semiconductor package is referred to as a third stacked semiconductor package.

また、第３積層型半導体パッケージにおいて、好ましくは、コンデンサは、第１端子部に接続される第１端子電極と、第２端子部に接続される第２端子電極と、第３端子部に接続される第３端子電極と、第４端子部に接続される第４端子電極とを有し、第１端子電極および第２端子電極は、第１端子部および第２端子部の対向方向に垂直な面をそれぞれ有し、第３端子電極および第４端子電極は、第３端子部および第４端子部の対向方向に垂直な面をそれぞれ有する。この積層型半導体パッケージを、第４積層型半導体パッケージという。
Further, Oite the third stacked semiconductor package, preferably, the capacitor has a first terminal electrode connected to the first terminal portion, and a second terminal electrode connected to the second terminal unit, the third terminal A third terminal electrode connected to the first terminal portion and a fourth terminal electrode connected to the fourth terminal portion, wherein the first terminal electrode and the second terminal electrode are opposed to the first terminal portion and the second terminal portion. The third terminal electrode and the fourth terminal electrode have surfaces perpendicular to the opposing direction of the third terminal portion and the fourth terminal portion, respectively. This stacked semiconductor package is referred to as a fourth stacked semiconductor package.

また、第３または第４積層型半導体パッケージにおいて、好ましくは、コンデンサにおける導体対を第１導体と第２導体の対向方向に平面透視したときに、第１端子部と第２端子部の対向方向に垂直な直線に関して、第３端子部は第１端子部と同じ側にあり、第４端子部は、第２端子部と同じ側にあり、放電時には、第１導体から第１端子部を通って第１端子電極へと第１電流が流れると共に、該第１電流とは逆極性の第２電流が第３端子電極から第３端子部を通って第２導体へと流れる電流ループが形成され、充電時には、第２端子電極から第２端子部を通って第１導体へ第３電流が流れると共に、該第３電流とは逆極性の第４電流が第２導体から第４端子部を通って第４端子電極へと流れる電流ループが形成される。この積層型半導体パッケージを、第６積層型半導体パッケージという。
The third or fourth stacked semiconductor package Oite di, preferably, when the conductor pairs in a plan perspective in the opposing direction of the first conductor and the second conductor in the capacitor, the first terminal portion and second terminal portion , The third terminal portion is on the same side as the first terminal portion, the fourth terminal portion is on the same side as the second terminal portion, and the first conductor to the first terminal during discharge A first current flows through the first terminal electrode to the first terminal electrode, and a second current having a polarity opposite to the first current flows from the third terminal electrode through the third terminal section to the second conductor. When charging, a third current flows from the second terminal electrode through the second terminal portion to the first conductor, and a fourth current having a polarity opposite to that of the third current flows from the second conductor to the fourth terminal. A current loop that flows through the portion to the fourth terminal electrode is formed. This stacked semiconductor package is referred to as a sixth stacked semiconductor package.

本発明の一つの態様によれば、積層型半導体装置は、上記積層型半導体パッケージのいずれかと、第１半導体パッケージに搭載される第１半導体素子と、第２半導体パッケージに搭載される第２半導体素子とを有する。
According to one aspect of the present invention, a stacked semiconductor device includes any one of the stacked semiconductor packages, a first semiconductor element mounted on the first semiconductor package, and a second semiconductor mounted on the second semiconductor package. Device.

本発明の積層型半導体パッケージによれば、実装面積を大きくすることなく、電源バウンスを減少させ、安定した信号品質を供給する積層型半導体パッケージを実現することができる。 According to the stacked semiconductor package of the present invention, it is possible to realize a stacked semiconductor package that reduces power supply bounce and supplies stable signal quality without increasing the mounting area.

以下に、添付の図面を参照して、本発明の実施の形態について説明する。 Embodiments of the present invention will be described below with reference to the accompanying drawings.

図１は本発明の積層型半導体パッケージの実施の形態の一例を示す断面図である。本実施の形態による積層型半導体パッケージ１は、第１基板２ａを有する第１半導体パッケージと、第２基板２ｂを有する第２半導体パッケージとを備える。第２半導体パッケージは、第１半導体パッケージに積層されている。半導体素子４ａ，４ｂは、それぞれ第１基板２ａおよび第２基板２ｂに搭載されている。また、第１基板２ａと第２基板２ｂとの間には、コンデンサ３が設けられている。コンデンサ３は、隣接する第１基板２ａおよび第２基板２ｂの電源配線同士および接地配線同士を接続する。第１基板２ａおよび第２基板２ｂの信号配線同士は、半田ボール５ｂによって接続される。なお、第１半導体パッケージおよび第２半導体パッケージに半導体素子４ａ，４ｂを搭載することにより、積層型半導体装置が構成される。 FIG. 1 is a sectional view showing an example of an embodiment of a stacked semiconductor package of the present invention. The stacked semiconductor package 1 according to the present embodiment includes a first semiconductor package having a first substrate 2a and a second semiconductor package having a second substrate 2b. The second semiconductor package is stacked on the first semiconductor package. The semiconductor elements 4a and 4b are mounted on the first substrate 2a and the second substrate 2b, respectively. A capacitor 3 is provided between the first substrate 2a and the second substrate 2b. Capacitor 3 connects power supply wirings and ground wirings of adjacent first substrate 2a and second substrate 2b. The signal wirings of the first substrate 2a and the second substrate 2b are connected by solder balls 5b. A stacked semiconductor device is configured by mounting the semiconductor elements 4a and 4b on the first semiconductor package and the second semiconductor package.

また、第１基板２ａは、半田ボール５ａによって、プリント配線基板６に接続される。第１基板２ａの金属配線は、プリント配線基板６上に形成された外部電気回路に、半田ボール５ｂによって、電気的に接続される。 The first substrate 2a is connected to the printed wiring board 6 by solder balls 5a. The metal wiring of the first substrate 2a is electrically connected to an external electric circuit formed on the printed wiring board 6 by solder balls 5b.

半導体素子４ａには、スイッチング動作に必要な電荷が、半田ボール５ａ、および第１基板２ａの金属配線を介して供給される。一方、半導体素子４ｂには、スイッチング動作に必要な電荷が、コンデンサ３から第２基板２ｂの金属配線を介して供給される。コンデンサ３は、電荷を蓄積している。これらの電荷は、プリント配線基板６から、半田ボール５ａおよび第１基板２ａの金属配線を介してコンデンサ３に供給される。 The electric charge necessary for the switching operation is supplied to the semiconductor element 4a through the solder ball 5a and the metal wiring of the first substrate 2a. On the other hand, the charge necessary for the switching operation is supplied to the semiconductor element 4b from the capacitor 3 through the metal wiring of the second substrate 2b. The capacitor 3 stores electric charges. These charges are supplied from the printed wiring board 6 to the capacitor 3 via the solder balls 5a and the metal wiring of the first board 2a.

このように、半導体素子４ｂの動作に必要な電荷は、第１基板２ａおよび第２基板２ｂの間に配置されたコンデンサ３から供給されるため、半導体素子４ｂへの電荷供給経路が短くなる。これによって、電源供給経路に付随するインダクタンスにより生じる電圧の変動、すなわち半導体素子４ｂに供給される電源供給回路の電源バウンスは小さくなる。 As described above, since the charge necessary for the operation of the semiconductor element 4b is supplied from the capacitor 3 disposed between the first substrate 2a and the second substrate 2b, the charge supply path to the semiconductor element 4b is shortened. As a result, the voltage fluctuation caused by the inductance associated with the power supply path, that is, the power bounce of the power supply circuit supplied to the semiconductor element 4b is reduced.

次に、本実施の形態による積層型半導体パッケージ１において、第１基板２ａおよび第２基板２ｂの間に配置されるコンデンサ３の構造を説明する。 Next, the structure of the capacitor 3 arranged between the first substrate 2a and the second substrate 2b in the stacked semiconductor package 1 according to the present embodiment will be described.

図２は、コンデンサ３の参考例の１つを示し、（ａ）は斜視図、（ｂ）〜（ｃ）はコンデンサ３における導体が形成された一部の誘電体層を導体の面方向に垂直に平面視した場合の平面図である。これらの図に示すコンデンサ３は、積層コンデンサであり、交互に配置された第１導体２１および第２導体２２と、第１導体２１と第２導体２２との間に配置された誘電体層３１とを有する。複数の誘電体層３１は、１つの積層体３２を構成する。
FIG. 2 shows one of reference examples of the capacitor 3, (a) is a perspective view, and (b) to (c) are a part of the dielectric layers on which the conductors in the capacitor 3 are formed in the conductor plane direction. It is a top view at the time of planarly viewing vertically. The capacitor 3 shown in these drawings is a multilayer capacitor, and the first conductor 21 and the second conductor 22 arranged alternately, and the dielectric layer 31 arranged between the first conductor 21 and the second conductor 22. And have. The plurality of dielectric layers 31 constitute one stacked body 32.

また、コンデンサ３は、第１端子部２３、第２端子部２４、第３端子部２５および第４端子部２６を備える。第１端子部２３および第２端子部２４は、第１導体２１から該第１導体２１と同一平面上にそれぞれ延在している。第１端子部２３および第２端子部２４は、少なくとも一部同士が第１導体２１を挟んで対向している。第３端子部２５および第４端子部２６は、第２導体２２から該第２導体２１と同一平面上にそれぞれ延在している。第３端子部２５および第４端子部２６は、少なくとも一部同士が第２導体２２を挟んで対向している。 The capacitor 3 includes a first terminal portion 23, a second terminal portion 24, a third terminal portion 25, and a fourth terminal portion 26. The first terminal portion 23 and the second terminal portion 24 extend from the first conductor 21 on the same plane as the first conductor 21. The first terminal portion 23 and the second terminal portion 24 are at least partially opposed to each other with the first conductor 21 in between. The third terminal portion 25 and the fourth terminal portion 26 respectively extend from the second conductor 22 on the same plane as the second conductor 21. The third terminal portion 25 and the fourth terminal portion 26 are at least partially opposed to each other with the second conductor 22 in between.

ここで、第３端子部は、第１端子部と第２端子部が対向する方向に垂直な直線に関して、第１端子部と同じ側にあり、第４端子部は、第２端子部と同じ側にある。そして、第１端子部と第３端子部は、半導体素子収納用パッケージ２ｂに接続され、第２端子部と第４端子部は、半導体素子収納用パッケージ２ａに接続される。 Here, the third terminal portion is on the same side as the first terminal portion with respect to a straight line perpendicular to the direction in which the first terminal portion and the second terminal portion face each other, and the fourth terminal portion is the same as the second terminal portion. On the side. The first terminal portion and the third terminal portion are connected to the semiconductor element housing package 2b, and the second terminal portion and the fourth terminal portion are connected to the semiconductor element housing package 2a.

さらに、コンデンサ３は、第１端子部２３に接続される第１端子電極２７と、第２端子部２４に接続される第２端子電極２８と、第３端子部２５に接続される第３端子電極２９と、第４端子部２６に接続される第４端子電極３０とを備える。 Further, the capacitor 3 includes a first terminal electrode 27 connected to the first terminal portion 23, a second terminal electrode 28 connected to the second terminal portion 24, and a third terminal connected to the third terminal portion 25. An electrode 29 and a fourth terminal electrode 30 connected to the fourth terminal portion 26 are provided.

積層体３２は、１層あたり１μｍ〜５μｍの厚みに形成された長方形の複数の誘電体層３１を、例えば７０層〜６００層積層することにより構成される直方体状の誘電体ブロックである。誘電体層３１の材料としては、例えば、チタン酸バリウム，チタン酸カルシウム，またはチタン酸ストロンチウムを主成分とする誘電体材料が用いられる。 The laminated body 32 is a rectangular parallelepiped dielectric block configured by laminating, for example, 70 to 600 layers of a plurality of rectangular dielectric layers 31 formed to have a thickness of 1 μm to 5 μm per layer. As the material of the dielectric layer 31, for example, a dielectric material mainly composed of barium titanate, calcium titanate, or strontium titanate is used.

第１導体２１および第２導体２２は、０．５μｍ〜２μｍの厚みに形成された導体パターンである。第１導体２１および第２導体２２は、積層体３２の内部で誘電体層３１を挟んで互いに対向するように交互に配置されている。第１導体２１および第２導体２２の材料としては、例えば、ニッケル，銅，ニッケル−銅，または銀−パラジウム等の金属を主成分とする導体材料が用いられる。 The first conductor 21 and the second conductor 22 are conductor patterns formed to a thickness of 0.5 μm to 2 μm. The first conductors 21 and the second conductors 22 are alternately arranged inside the multilayer body 32 so as to face each other with the dielectric layer 31 in between. As the material of the first conductor 21 and the second conductor 22, for example, a conductor material mainly composed of a metal such as nickel, copper, nickel-copper, or silver-palladium is used.

第１端子部２３および第２端子部２４は、第１導体２１の対向する２辺の中央部からそれぞれ積層体３２の周囲に引き出された導体パターンである。第１端子部２３および第２端子部２４は、積層体３２の周囲に形成された第１端子電極２７および第２端子電極２８にそれぞれ電気的に接続される。また、第３端子部２５および第４端子部２６は、第２導体２２の対向する２辺の中央部からそれぞれ積層体３２の周囲に引き出された導体パターンである。第３端子部２５および第４端子部２６は、積層体３２の周囲に形成された第３端子電極２９および第４端子電極３０にそれぞれ電気的に接続される。 The first terminal portion 23 and the second terminal portion 24 are conductor patterns drawn out from the central portions of two opposing sides of the first conductor 21 to the periphery of the multilayer body 32. The first terminal portion 23 and the second terminal portion 24 are electrically connected to a first terminal electrode 27 and a second terminal electrode 28 formed around the multilayer body 32, respectively. In addition, the third terminal portion 25 and the fourth terminal portion 26 are conductor patterns drawn out from the central portions of the two opposing sides of the second conductor 22 to the periphery of the multilayer body 32, respectively. The third terminal portion 25 and the fourth terminal portion 26 are electrically connected to a third terminal electrode 29 and a fourth terminal electrode 30 formed around the multilayer body 32, respectively.

第１端子電極２７、第２端子電極２８、第３端子電極２９、および第４端子電極３０は、それぞれ積層体３２の周囲に配置される帯状の電極である。これらの端子電極２７−３０の厚みは、２μｍ〜７０μｍである。第１端子電極２７は、積層体３２の積層方向の上下に位置する第１端子部２３同士を電気的に接続する。第２端子電極２８は、積層体３２の積層方向の上下に位置する第２端子部２４同士を電気的に接続する。第３端子電極２９は、積層体３２の積層方向の上下に位置する第３端子部２５同士を電気的に接続する。第４端子電極２９は、積層体３２の積層方向の上下に位置する第４端子部２６同士を電気的に接続する。 The first terminal electrode 27, the second terminal electrode 28, the third terminal electrode 29, and the fourth terminal electrode 30 are band-shaped electrodes that are respectively arranged around the stacked body 32. The thickness of these terminal electrodes 27-30 is 2 μm to 70 μm. The first terminal electrode 27 electrically connects the first terminal portions 23 positioned above and below in the stacking direction of the stacked body 32. The second terminal electrode 28 electrically connects the second terminal portions 24 positioned above and below in the stacking direction of the stacked body 32. The third terminal electrode 29 electrically connects the third terminal portions 25 positioned above and below in the stacking direction of the stacked body 32. The fourth terminal electrode 29 electrically connects the fourth terminal portions 26 positioned above and below in the stacking direction of the stacked body 32.

第１端子電極２７、第２端子電極２８、第３端子電極２９、および第４端子電極３０の材料としては、例えば、ニッケル，銅，銀，またはパラジウム等の金属を主成分とする導体材料が用いられる。 As a material of the first terminal electrode 27, the second terminal electrode 28, the third terminal electrode 29, and the fourth terminal electrode 30, for example, a conductive material whose main component is a metal such as nickel, copper, silver, or palladium is used. Used.

以下に、コンデンサ３の動作について説明する。積層型半導体パッケージ１において、半導体素子４ｂがスイッチング動作を行う場合、半導体素子４ｂにより消費される電荷を補うためにコンデンサ３に蓄えられた電荷が放電される。放電時には、第１導体２１から第１端子部２３を通って第１端子電極２７へと電流（Ａ）が流れると共に、これとは逆極性の電流（Ｂ）が第３端子電極２９から第３端子部２５を通って第２導体２２へと流れる電流ループを形成する。また、充電時には、第２端子電極２８から第２端子部２４を通って第１導体２１へ電流（Ａ’）が流れると共に、これとは逆極性の電流（Ｂ’）が第２導体２２から第４端子部２６を通って第４端子電極３０へと流れる電流ループを形成する。コンデンサ３の寄生インダクタンスはこの電流ループを貫く磁束の大きさによって決定される。磁束は電流の流れ方向に対し垂直に電流を右回りに取り巻く様に発生するため、電流の向きが逆向きの場合、磁束も逆向きとなり互いに打ち消しあう。 Hereinafter, the operation of the capacitor 3 will be described. In the stacked semiconductor package 1, when the semiconductor element 4b performs a switching operation, the charge stored in the capacitor 3 is discharged in order to supplement the charge consumed by the semiconductor element 4b. At the time of discharging, a current (A) flows from the first conductor 21 through the first terminal portion 23 to the first terminal electrode 27, and a current (B) having a polarity opposite to that flows from the third terminal electrode 29 to the third terminal electrode 29. A current loop that flows through the terminal portion 25 to the second conductor 22 is formed. At the time of charging, a current (A ′) flows from the second terminal electrode 28 through the second terminal portion 24 to the first conductor 21, and a current (B ′) having a polarity opposite to that flows from the second conductor 22. A current loop flowing through the fourth terminal portion 26 to the fourth terminal electrode 30 is formed. The parasitic inductance of the capacitor 3 is determined by the magnitude of the magnetic flux passing through this current loop. Since the magnetic flux is generated so as to surround the current in the clockwise direction perpendicular to the current flow direction, when the current direction is reversed, the magnetic flux is also reversed and cancel each other.

このように、放電時および充電時において、コンデンサ３に流れる電流の向きが逆方向となるため、第１導体２１と第２導体２２との間、および第１端子部２３と第３端子部２５との間、および第２端子部２２と第４端子部２６との間のおのおので、互いに発生する磁束を弱め合い、コンデンサ３の寄生インダクタンスを小さくすることができる。これにより、積層型半導体装置の電源バウンスを減少させ、安定して半導体素子を動作させることができる。 As described above, the direction of the current flowing through the capacitor 3 is reversed during discharging and charging, and therefore, between the first conductor 21 and the second conductor 22 and between the first terminal portion 23 and the third terminal portion 25. And between the second terminal portion 22 and the fourth terminal portion 26, the magnetic fluxes generated with each other can be weakened and the parasitic inductance of the capacitor 3 can be reduced. Thereby, the power source bounce of the stacked semiconductor device can be reduced and the semiconductor element can be operated stably.

積層型半導体パッケージによれば、第２半導体パッケージのサイズを大きくし、プリント配線板から直接電荷を供給することなく、安定した電源供給が行える。さらに、第１半導体パッケージと第２半導体パッケージとの間に設けられたコンデンサにより、第１の半導体パッケージに搭載された半導体素子と第２の半導体パッケージの間に一定の距離を置くことができ、熱の滞留を防ぐことができるため、安定して半導体素子を動作させることができる。
According to the product layer type semiconductor package, the size of the second semiconductor package is increased, without supplying direct charge from the printed wiring board, can be performed stable power supply. Furthermore, a capacitor provided between the first semiconductor package and the second semiconductor package can place a certain distance between the semiconductor element mounted on the first semiconductor package and the second semiconductor package, Since heat retention can be prevented, the semiconductor element can be stably operated.

積層型半導体パッケージ１において、第１基板２ａおよび第２基板２ｂは、例えば、酸化アルミニウム質焼結体，窒化アルミニウム質焼結体，炭化珪素質焼結体，窒化珪素質焼結体，ムライト質焼結体、またはガラスセラミックス等の無機絶縁材料からなる。
In the product layer type semiconductor package 1, the first substrate 2a and the second substrate 2b, for example, aluminum sintered body oxide, aluminum sintered body nitride, silicon carbide sintered body, a silicon nitride sintered body, mullite It consists of an inorganic insulating material such as a sintered material or glass ceramics.

また、金属配線は、半導体素子４ａ，４ｂとプリント配線基板６とを電気的に接続する機能を有している。このような金属配線は、例えば、タングステン（Ｗ），モリブデン（Ｍｏ），モリブデン−マンガン（Ｍｏ−Ｍｎ），銅（Ｃｕ），銀（Ａｇ）、もしくは銀−パラジウム（Ａｇ−Ｐｄ）等の金属粉末メタライズ、または銅（Ｃｕ），銀（Ａｇ），ニッケル（Ｎｉ），クロム（Ｃｒ），チタン（Ｔｉ），金（Ａｕ）、もしくはニオブ（Ｎｂ）またはそれらの合金等で形成される。この金属配線は、メタライズ法等の厚膜法や、薄膜法等の金属層形成手法により、所定パターンに形成すればよい。 The metal wiring has a function of electrically connecting the semiconductor elements 4a and 4b and the printed wiring board 6. Such a metal wiring is, for example, a metal such as tungsten (W), molybdenum (Mo), molybdenum-manganese (Mo-Mn), copper (Cu), silver (Ag), or silver-palladium (Ag-Pd). It is formed of powder metallization, or copper (Cu), silver (Ag), nickel (Ni), chromium (Cr), titanium (Ti), gold (Au), niobium (Nb), or an alloy thereof. The metal wiring may be formed in a predetermined pattern by a thick film method such as a metallization method or a metal layer formation method such as a thin film method.

例えば金属配線を厚膜法で形成する場合、Ｗ粉末に適当な有機バインダや溶剤等を添加混合して得た金属ペーストを、セラミックグリーンシートに所定のパターンで印刷塗布し、これらセラミックグリーンシートを積層して積層体とするとともに焼成することによって形成することができる。 For example, when a metal wiring is formed by a thick film method, a metal paste obtained by adding and mixing an appropriate organic binder or solvent to W powder is printed and applied in a predetermined pattern on a ceramic green sheet. It can be formed by stacking to form a laminate and firing.

また、第１基板２ａおよび第２基板２ｂの無機絶縁材料は、例えばセラミックグリーンシート積層法や、押し出し成形法等の基板形成手段によって形成される。 Moreover, the inorganic insulating material of the 1st board | substrate 2a and the 2nd board | substrate 2b is formed by board | substrate formation means, such as a ceramic green sheet lamination method and an extrusion molding method, for example.

これらの無機絶縁材料は以下のようにして作製される。無機絶縁材料が例えば酸化アルミニウム質焼結体から成る場合、まず、酸化アルミニウム，酸化珪素，酸化カルシウムまたは酸化マグネシウム等の原料粉末に適当な有機バインダや溶剤等を添加混合して泥漿状となし、これをドクターブレード法等でシート状となすことによってセラミックグリーンシートを得る。そして、セラミックグリーンシートに各金属配線と成る金属ペーストを所定のパターンに印刷塗布して、これらを上下に積層し、最後にこの積層体を還元雰囲気中で約１６００℃の温度で焼成することによって製作される。 These inorganic insulating materials are produced as follows. When the inorganic insulating material is made of, for example, an aluminum oxide sintered body, first, a suitable organic binder or solvent is added to and mixed with the raw material powder such as aluminum oxide, silicon oxide, calcium oxide or magnesium oxide to form a slurry. A ceramic green sheet is obtained by making this into a sheet by a doctor blade method or the like. Then, a metal paste for forming each metal wiring is printed and applied in a predetermined pattern on the ceramic green sheet, and these are laminated up and down, and finally the laminate is fired at a temperature of about 1600 ° C. in a reducing atmosphere. Produced.

また、第１基板２ａおよび第２基板２ｂの無機絶縁材料は、ポリイミド，エポキシ樹脂，フッ素樹脂，ポリノルボルネン、若しくはベンゾシクロブテン等の有機絶縁材料、またはセラミック粉末等の無機絶縁物粉末を、エポキシ樹脂等の熱硬化性樹脂で結合して成る複合絶縁材料等の電気的な絶縁材料から成っていてもよい。 The inorganic insulating material of the first substrate 2a and the second substrate 2b is an organic insulating material such as polyimide, epoxy resin, fluororesin, polynorbornene, or benzocyclobutene, or inorganic insulating powder such as ceramic powder. You may consist of electrical insulation materials, such as a composite insulation material formed by couple | bonding with thermosetting resins, such as resin.

例えば、複合絶縁材料からなる場合、まず酸化アルミニウム質焼結体から成るセラミックスを混合した熱硬化性のエポキシ樹脂、あるいはガラス繊維を織り込んだ布にエポキシ樹脂を含浸させて成るガラスエポキシ樹脂等から成る絶縁層の上面に、有機樹脂前駆体をスピンコート法もしくはカーテンコート法等により被着させ、これを熱硬化処理することによって絶縁層を形成する。この絶縁層と、銅層を無電解めっき法や蒸着法等の薄膜形成技術およびフォトリソグラフィ技術を採用することによって形成して成る薄膜配線導体層とを交互に積層し、約１７０℃程度の温度で加熱硬化することによって製作される。これらの積層された無機絶縁材料の厚みは、使用する材料の特性に応じて、要求される仕様に対応する機械的強度や電気的特性等の条件を満たすように設定される。 For example, in the case of a composite insulating material, first, a thermosetting epoxy resin mixed with ceramics made of an aluminum oxide sintered body, or a glass epoxy resin made by impregnating a glass fiber woven cloth with an epoxy resin, etc. An organic resin precursor is deposited on the upper surface of the insulating layer by a spin coating method or a curtain coating method, and the insulating layer is formed by thermosetting the organic resin precursor. This insulating layer and a thin film wiring conductor layer formed by adopting a copper layer by employing a thin film forming technique such as an electroless plating method or a vapor deposition method and a photolithography technique are alternately laminated, and a temperature of about 170 ° C. It is manufactured by heating and curing. The thickness of these laminated inorganic insulating materials is set so as to satisfy the conditions such as mechanical strength and electrical characteristics corresponding to the required specifications in accordance with the characteristics of the materials used.

また、積層型半導体パッケージ１において、第１基板２ａおよび第２基板２ｂの表面には、高速で動作するＩＣ，ＬＳＩ等の半導体素子や半導体レーザ（ＬＤ），フォトダイオード（ＰＤ）等の光半導体素子４ａ，４ｂが搭載される。この半導体素子４ａ，４ｂは、裏面側に信号用や電源用、接地用の端子（図示せず）が形成され、各端子が第１基板２ａおよび第２基板２ｂの表面に形成されたフリップチップ用電極パッド（図示せず）に、錫−鉛（Ｓｎ−Ｐｂ）合金や錫-銀-銅（Ｓｎ−Ａｇ−Ｃu）等の半田または金（Ａｕ）等から成るフリップチップ接続用導体バンプを介して電気的に接続されて実装される。 Further, in the stacked semiconductor package 1, on the surfaces of the first substrate 2a and the second substrate 2b, semiconductor elements such as IC and LSI that operate at high speed, and optical semiconductors such as a semiconductor laser (LD) and a photodiode (PD). Elements 4a and 4b are mounted. The semiconductor elements 4a and 4b are flip-chips in which terminals for signal, power supply, and ground (not shown) are formed on the back side, and each terminal is formed on the surface of the first substrate 2a and the second substrate 2b. Flip chip connecting conductor bumps made of solder such as tin-lead (Sn-Pb) alloy, tin-silver-copper (Sn-Ag-Cu), gold (Au), etc. It is mounted by being electrically connected.

各フリップチップ用電極パッドは、第１基板２ａおよび第２基板２ｂに形成されている金属配線（図示せず）と、第１基板２ａおよび第２基板２ｂの表面から内部にかけて形成されたビア導体等の貫通導体等（図示せず）とを介してそれぞれ所望の回路に電気的に接続され、半導体素子４ａ，４ｂの各端子が、対応する回路配線と電気的に接続される。 Each flip-chip electrode pad includes a metal wiring (not shown) formed on the first substrate 2a and the second substrate 2b, and a via conductor formed from the surface to the inside of the first substrate 2a and the second substrate 2b. The terminals of the semiconductor elements 4a and 4b are electrically connected to the corresponding circuit wirings, respectively, through a through conductor (not shown) or the like.

また、第１基板２ａおよび第２基板２ｂ内に形成された貫通導体（図示せず）は、セラミックグリーンシートに貫通孔を金型やパンチングによる打ち抜き方法またはレーザ加工等の加工方法により形成しておき、ＷやＣｕ粉末に適当な有機バインダや溶剤等を添加混合して得た金属ペーストを貫通孔の内側側面の所定の領域に塗布し、これをセラミックグリーンシートの積層体とともに焼成することによって形成することができる。 The through conductors (not shown) formed in the first substrate 2a and the second substrate 2b are formed by forming a through hole in the ceramic green sheet by a punching method using a die or punching or a processing method such as laser processing. By applying a metal paste obtained by adding and mixing an appropriate organic binder, solvent, etc. to W or Cu powder to a predetermined region on the inner side surface of the through hole, and firing this together with a laminate of ceramic green sheets Can be formed.

積層型半導体パッケージ１において、信号波形を伝送する第１基板２ａおよび第２基板２ｂ内に形成された線路導体（図示せず）は、各線路導体の配線幅および第１基板２ａおよび第２基板２ｂ内に形成された絶縁層の厚みを設定することにより、線路導体の特性インピーダンスを任意の値に設定することができる。そのため、例えば複数の線路導体により、良好な伝送特性を有する線路導体を形成することが可能となる。各線路導体の特性インピーダンスは一般的には５０Ωに設定される。なお、複数の線路導体は、それぞれ異なる電気信号を伝送するものとしてもよい。 In the stacked semiconductor package 1, the line conductors (not shown) formed in the first substrate 2a and the second substrate 2b that transmit the signal waveforms are the wiring width of each line conductor, the first substrate 2a, and the second substrate. By setting the thickness of the insulating layer formed in 2b, the characteristic impedance of the line conductor can be set to an arbitrary value. Therefore, for example, a line conductor having good transmission characteristics can be formed by a plurality of line conductors. The characteristic impedance of each line conductor is generally set to 50Ω. The plurality of line conductors may transmit different electrical signals.

図３は、コンデンサ３の別の参考例の１つを示し、（ａ）は斜視図、（ｂ）〜（ｃ）はコンデンサ３における導体が形成された一部の誘電体層を導体の面方向に垂直に平面視した場合の平面図である。この参考例では、第１端子部２３および第２端子部２４は、第１導体２１から該第１導体２１と同一平面上にそれぞれ延在しており、第３端子部２５および第４端子部２６は、第２導体２２から該第２導体２１と同一平面上にそれぞれ延在している。また、第１端子部２３および第２端子部２４は、第１導体２１の対向する２辺の端部から、その２辺に垂直な方向に延在している。第１端子部２３、第２端子部２４、および第１導体２１は、Ｔ字型の導体パターンを構成する。同様に、第３端子部２５および第４端子部２６は、第２導体２２の対向する２辺の端部から、その２辺に垂直な方向に延在している。第３端子部２４、第４端子部２５、および第２導体２２は、Ｔ字型の導体パターンを構成する。
FIG. 3 shows another reference example of the capacitor 3, (a) is a perspective view, and (b) to (c) are parts of the dielectric layer on which the conductor in the capacitor 3 is formed. It is a top view at the time of planar view perpendicular | vertical to a direction. In this reference example, the first terminal portion 23 and the second terminal portion 24 extend from the first conductor 21 on the same plane as the first conductor 21, respectively, and the third terminal portion 25 and the fourth terminal portion. 26 extends from the second conductor 22 on the same plane as the second conductor 21. Further, the first terminal portion 23 and the second terminal portion 24 extend from the ends of the two opposite sides of the first conductor 21 in a direction perpendicular to the two sides. The first terminal part 23, the second terminal part 24, and the first conductor 21 constitute a T-shaped conductor pattern. Similarly, the 3rd terminal part 25 and the 4th terminal part 26 are extended in the direction perpendicular | vertical to the 2 sides from the edge part of 2 sides which the 2nd conductor 22 opposes. The third terminal portion 24, the fourth terminal portion 25, and the second conductor 22 constitute a T-shaped conductor pattern.

図３に示すコンデンサ３では、第１導体２１および第２導体２２は対向するように配置される。ここで、コンデンサ３を、第１導体２１および第２導体２２の面方向に垂直に、すなわち第１導体２１及び第２導体２２の対向方向に平面透視したとき、第１端子部２３と第３端子部２４は、第１導体２１または第２導体２２に関して同じ側に、それぞれ離間して位置している。また、第３端子部２５と第４端子部２６は、第１導体２１または第２導体２２に関して同じ側に、それぞれ離間して位置している。 In the capacitor 3 shown in FIG. 3, the first conductor 21 and the second conductor 22 are arranged to face each other. Here, when the capacitor 3 is viewed in a plane perpendicular to the surface direction of the first conductor 21 and the second conductor 22, that is, in the opposing direction of the first conductor 21 and the second conductor 22, the first terminal portion 23 and the third conductor 3 The terminal portions 24 are spaced apart from each other on the same side with respect to the first conductor 21 or the second conductor 22. In addition, the third terminal portion 25 and the fourth terminal portion 26 are located on the same side with respect to the first conductor 21 or the second conductor 22 and are spaced apart from each other.

図３の構成においても、図２の構成と同様に、放電時および充電時において、コンデンサ３に流れる電流の向きが逆方向となるため、第１導体２１と第２導体２２との間、および第１端子部２３と第３端子部２５との間、および第２端子部２２と第４端子部２６との間のおのおので、互いに発生する磁束を弱め合い、コンデンサ３の寄生インダクタンスを小さくすることができる。 Also in the configuration of FIG. 3, as in the configuration of FIG. 2, the direction of the current flowing through the capacitor 3 is reversed during discharging and charging, and therefore, between the first conductor 21 and the second conductor 22, and Between the first terminal portion 23 and the third terminal portion 25 and between the second terminal portion 22 and the fourth terminal portion 26, the magnetic flux generated between each other is weakened, and the parasitic inductance of the capacitor 3 is reduced. be able to.

また、第１端子部２３と第３端子部２５が離間しており、第２端子部２４と第４端子部２６が離間していることから、第１端子部２３と第１端子電極２７、第２端子部２４と第２端子電極２８、第３端子部２５と第３端子電極２９、および第４端子部２６と第４端子電極３０のそれぞれの電気的接続をより容易に行うことができる。さらに、半導体素子４ｂのスイッチング動作が高速で繰り返された場合に生じる、第２端子部２４，第１導体２１，および第１端子部２３を介して、第２端子電極２８と第１端子電極２７との間を流れる貫通電流および、第３端子部２５，第２導体２２，および第４端子部２６を介して、第３端子電極２９と第４端子電極３０との間を流れる貫通電流の経路を短くすることができ、コンデンサ３の寄生インダクタンスをより小さくすることができる。ここで、貫通電流とは、高速で繰り返される半導体素子４ｂのスイッチングによって、第２端子電極２８と第１端子電極２７との間、および第３端子電極２９と第４端子電極３０と間を直接流れる電流であり、電荷の充電および放電に直接寄与しない電流のことである。 Moreover, since the 1st terminal part 23 and the 3rd terminal part 25 are spaced apart and the 2nd terminal part 24 and the 4th terminal part 26 are spaced apart, the 1st terminal part 23 and the 1st terminal electrode 27, The second terminal portion 24 and the second terminal electrode 28, the third terminal portion 25 and the third terminal electrode 29, and the fourth terminal portion 26 and the fourth terminal electrode 30 can be more easily electrically connected. . Furthermore, the second terminal electrode 28 and the first terminal electrode 27 are generated via the second terminal portion 24, the first conductor 21, and the first terminal portion 23 that are generated when the switching operation of the semiconductor element 4 b is repeated at a high speed. And a through current flowing between the third terminal electrode 29 and the fourth terminal electrode 30 via the third terminal portion 25, the second conductor 22, and the fourth terminal portion 26. The parasitic inductance of the capacitor 3 can be further reduced. Here, the through-current is directly between the second terminal electrode 28 and the first terminal electrode 27 and between the third terminal electrode 29 and the fourth terminal electrode 30 by switching of the semiconductor element 4b repeated at high speed. It is a current that flows and does not directly contribute to charge charging and discharging.

図４は、コンデンサ３の本願発明の実施例を示し、（ａ）は斜視図、（ｂ）〜（ｃ）はコンデンサ３における導体が形成された一部の誘電体層を導体の面方向に垂直に平面視した場合の平面図である。この実施例では、第１端子部２３および第２端子部２４は、第１導体２１の対向する２辺の中央部から、その２辺に垂直な方向に延在している。
4A and 4B show an embodiment of the present invention of the capacitor 3, wherein FIG. 4A is a perspective view, and FIGS. 4B to 4C are diagrams showing a part of the dielectric layer formed with the conductor in the capacitor 3 in the plane direction of the conductor. It is a top view at the time of planarly viewing vertically. In this embodiment , the first terminal portion 23 and the second terminal portion 24 extend from the central portion of the two opposite sides of the first conductor 21 in a direction perpendicular to the two sides.

本実施例では、第１導体２１と第２導体２２の対向方向に平面透視したときに、第１端子部２３と第３端子部２５は一部のみ重複し、第２端子部２４と第４端子部２６は一部のみ重複している。これにより、図２のコンデンサと比較して、第１端子部２３と第１端子電極２７、第２端子部２４と第２端子電極２８、第３端子部２５と第３端子電極２９、および第４端子部２６と第４端子電極３０の電気的接続をより容易に行うことができる。 In the present embodiment, when seen in a plan view in the opposing direction of the first conductor 21 and the second conductor 22, the first terminal portion 23 and the third terminal portion 25 partially overlap, and the second terminal portion 24 and the fourth terminal Only a part of the terminal portion 26 is overlapped. Thus, compared with the capacitor of FIG. 2, the first terminal portion 23 and the first terminal electrode 27, the second terminal portion 24 and the second terminal electrode 28, the third terminal portion 25 and the third terminal electrode 29, and the The electrical connection between the four terminal portion 26 and the fourth terminal electrode 30 can be more easily performed.

また、図４で示した実施例において、第１端子電極２７および第２端子電極２８は、第１端子部２３および第２端子部２４の対向方向に垂直な面をそれぞれ有し、第３端子電極２９および第４端子電極３０は、第３端子部２５および第４端子部２６の対向方向に垂直な面をそれぞれ有している。よって、第１端子電極２７から第４端子電極３０の間で、半
導体素子４ｂのスイッチング動作が高速で繰り返された場合に生じる第２端子電極２８から第１端子電極２７へと電流が流れる方向および、第３端子電極２９から第４端子電極３０へと電流が流れる方向に、第１導体２１と第２導体２２からなる導体対が並列に複数配置されるため、多くの電流経路を確保することができ、コンデンサ３の寄生インダクタンスを小さくすることができる。
Moreover, at the embodiment shown in FIG. 4, the first terminal electrode 27 and second terminal electrode 28 has respectively a plane perpendicular to the opposing direction of the first terminal portion 23 and the second terminal portion 24, the The three terminal electrode 29 and the fourth terminal electrode 30 have surfaces perpendicular to the facing direction of the third terminal portion 25 and the fourth terminal portion 26, respectively. Therefore, the direction in which current flows from the second terminal electrode 28 to the first terminal electrode 27 that occurs when the switching operation of the semiconductor element 4b is repeated at high speed between the first terminal electrode 27 and the fourth terminal electrode 30; Since a plurality of conductor pairs including the first conductor 21 and the second conductor 22 are arranged in parallel in the direction in which current flows from the third terminal electrode 29 to the fourth terminal electrode 30, a large number of current paths must be ensured. The parasitic inductance of the capacitor 3 can be reduced.

なお、本発明の積層型半導体パッケージは、上述の実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば種々の変更は可能である。
Incidentally, the stacked semiconductor package of the present invention is not intended to be limited to the above embodiments, and various modifications as long as it does not depart from the gist of the present invention are possible.

本発明の積層型半導体パッケージの実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the laminated semiconductor package of this invention. （ａ）はコンデンサ構造の参考例を示す斜視図であり、（ｂ）〜（ｃ）はコンデンサにおける導体が形成された一部の誘電体層を導体の面方向に垂直に平面視した場合の平面図である。(A) is a perspective view which shows the reference example of a capacitor | condenser structure, (b)-(c) is the case where the one part dielectric material layer in which the conductor in the capacitor | condenser was formed was planarly viewed perpendicularly to the surface direction of a conductor. It is a top view. （ａ）はコンデンサ構造の参考例を示す斜視図であり、（ｂ）〜（ｃ）はコンデンサにおける導体が形成された一部の誘電体層を導体の面方向に垂直に平面視した場合の平面図である。(A) is a perspective view which shows the reference example of a capacitor | condenser structure, (b)-(c) is the case where the one part dielectric material layer in which the conductor in the capacitor | condenser was formed was planarly viewed perpendicularly to the surface direction of a conductor. It is a top view. （ａ）はコンデンサ構造の本願発明の実施例を示す斜視図であり、（ｂ）〜（ｃ）はコンデンサにおける導体が形成された一部の誘電体層を導体の面方向に垂直に平面視した場合の平面図である。(A) is a perspective view which shows the Example of this invention of a capacitor | condenser structure, (b)-(c) planarly views some dielectric layers in which the conductor in the capacitor was formed perpendicularly to the surface direction of the conductor FIG.

Explanation of symbols

１・・・積層型半導体パッケージ
２ａ，２ｂ・・・基板
３・・・コンデンサ
４ａ，４ｂ・・・半導体素子
５ａ，５ｂ・・・半田ボール
６・・・プリント配線基板
２１，２２・・・第１〜第２導体
２３，２４，２５，２６・・・第１〜第４端子部
２７，２８，２９，３０・・・第１〜第４端子電極
３１・・・誘電体
３２・・・積層体 DESCRIPTION OF SYMBOLS 1 ... Stacked-type semiconductor package 2a, 2b ... Board | substrate 3 ... Capacitor 4a, 4b ... Semiconductor element 5a, 5b ... Solder ball 6 ... Printed wiring board 21, 22 ... First 1st-2nd conductor 23,24,25,26 ... 1st-4th terminal part 27,28,29,30 ... 1st-4th terminal electrode 31 ... Dielectric 32 ... Lamination | stacking body

Claims

A first semiconductor package;
A second semiconductor package stacked on the first semiconductor package;
A stacked semiconductor package having a capacitor provided between the first semiconductor package and the second semiconductor package and connected to the first semiconductor package and the second semiconductor package;
The capacitor is
At least one conductor pair composed of opposing first and second flat-plate conductors;
A first terminal portion and a second terminal portion that extend from the first conductor on the same plane as the first conductor and at least partially face each other across the first conductor;
A third terminal portion and a fourth terminal portion respectively extending from the second conductor on the same plane as the second conductor and facing each other with the second conductor interposed therebetween,
The first terminal portion and the third terminal portion are connected to the second semiconductor package,
The second terminal portion and the fourth terminal portion are connected to the first semiconductor package ,
Each of the first conductor and the second conductor has a quadrangular shape,
The first terminal portion and the second terminal portion extend from central portions of two opposite sides of the first conductor, respectively.
The third terminal portion and the fourth terminal portion respectively extend from the central portions of the two opposing sides of the second conductor,
When the conductor pair is seen in a plan view in the opposing direction of the first conductor and the second conductor, the first terminal portion and the third terminal portion partially overlap, and the second terminal portion and the fourth terminal A stacked semiconductor package with terminal portions partially overlapping .

The capacitor includes a first terminal electrode connected to the first terminal portion, a second terminal electrode connected to the second terminal portion, a third terminal electrode connected to the third terminal portion, A fourth terminal electrode connected to the fourth terminal portion,
The first terminal electrode and the second terminal electrode each have a surface perpendicular to the facing direction of the first terminal portion and the second terminal portion,
2. The stacked semiconductor package according to claim 1, wherein the third terminal electrode and the fourth terminal electrode each have a surface perpendicular to a facing direction of the third terminal portion and the fourth terminal portion.

The third terminal with respect to a straight line perpendicular to the opposing direction of the first terminal portion and the second terminal portion when the conductor pair in the capacitor is seen in a plan view in the opposing direction of the first conductor and the second conductor. Part is on the same side as the first terminal part, the fourth terminal part is on the same side as the second terminal part, and during discharge, the first conductor passes through the first terminal part and passes through the first terminal part. A current loop is formed in which a first current flows to the terminal electrode and a second current having a polarity opposite to the first current flows from the third terminal electrode to the second conductor through the third terminal portion. During charging, a third current flows from the second terminal electrode through the second terminal portion to the first conductor, and a fourth current having a polarity opposite to the third current is transmitted from the second conductor to the first conductor. A current loop that flows through the four terminal portions to the fourth terminal electrode is formed. The stacked semiconductor package according to claim 1 or claim 2 that.

A stacked semiconductor package according to any one of claims 1 to 3 ,
A first semiconductor element mounted on the first semiconductor package;
A stacked semiconductor device comprising: a second semiconductor element mounted on the second semiconductor package.