JP2005243864A - Wiring board - Google Patents

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Publication number
JP2005243864A
JP2005243864A JP2004050700A JP2004050700A JP2005243864A JP 2005243864 A JP2005243864 A JP 2005243864A JP 2004050700 A JP2004050700 A JP 2004050700A JP 2004050700 A JP2004050700 A JP 2004050700A JP 2005243864 A JP2005243864 A JP 2005243864A
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differential
conductor
transmission line
inner layer
differential transmission
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Koki Kawabata
幸喜 川畑
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To greatly control reflection loss of a high frequency signal at a connection part between a differential transmission line and a differential through conductor, and to improve the operation property of a semiconductor device. <P>SOLUTION: A wiring board 1 comprises the differential transmission line 8 formed in an inner layer of an insulating substrate 2, the differential through conductor 9 formed from one end of the differential transmission line 8 to the principal surface of the insulating substrate 2 or another inner layer, an inner grounding conductor 4b formed on an inner layer where the differential transmission line 8 is formed around the differential transmission line 8 and around a connection part with the differential through conductor 9 in a circular shape; and an inner layer grounding conductor 4a having an opening 12 formed in the principal surface of the insulating substrate 2 or another inner layer so as to surround the differential through conductor 9 in a circular shape. A diameter of a portion 14 circularly around a connection part between the differential transmission line 8 of the inner layer grounding conductor 4b and the differential through conductor 9 of the same is 1.1 to 2 times that of a circular opening 12 of the inner layer grounding conductor 4a. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、高速で作動する半導体素子や光半導体素子等の電子部品を搭載するのに好適な、差動伝送線路を有する配線基板に関するものである。   The present invention relates to a wiring board having a differential transmission line suitable for mounting electronic components such as semiconductor elements and optical semiconductor elements that operate at high speed.

従来、高速で作動する半導体素子や光半導体素子等の電子部品を搭載するための配線基板においては、従来の配線基板の例の断面図である図５に示すように、高速の高周波信号を正確かつ効率よく伝播させるために、差動伝送線路５８と外部入出力用電極５１１との接続には差動貫通導体５９を用いている。差動伝送線路５８の構造は、一対の伝送線路によって決定される特性インピーダンスが所望の値となるように、絶縁基板５２の絶縁層５２ａ〜５２ｆの材料や、絶縁層５２ａ〜５２ｆの断面構造、すなわち配線導体５３の幅および厚み、配線導体５３と内層接地導体や接地導体との距離等を制御して決定されている。差動貫通導体５９は、一対の貫通導体９ａ，９ｂによって決定される特性インピーダンスが所望の値となるように、配線基板５２の絶縁層５２ａ〜５２ｆの材料や、差動貫通導体５９および接地貫通導体５１０の直径を変更したり、更にこれらの相対位置を互いに変更することによって決定されている。   Conventionally, in a wiring board for mounting electronic components such as a semiconductor element and an optical semiconductor element that operate at high speed, a high-speed high-frequency signal is accurately obtained as shown in FIG. In order to propagate efficiently, a differential through conductor 59 is used to connect the differential transmission line 58 and the external input / output electrode 511. The structure of the differential transmission line 58 includes the material of the insulating layers 52a to 52f of the insulating substrate 52 and the cross-sectional structure of the insulating layers 52a to 52f so that the characteristic impedance determined by the pair of transmission lines has a desired value. That is, it is determined by controlling the width and thickness of the wiring conductor 53, the distance between the wiring conductor 53 and the inner-layer ground conductor or the ground conductor, and the like. The differential through conductor 59 is made of a material of the insulating layers 52a to 52f of the wiring board 52, the differential through conductor 59 and the ground through so that the characteristic impedance determined by the pair of through conductors 9a and 9b becomes a desired value. It is determined by changing the diameter of the conductor 510 and further changing the relative positions thereof.

また、配線基板５１に形成された差動伝送線路６８と差動貫通導体６９の接続部周辺の要部拡大平面図である図６に示すように、差動貫通導体６９は積層ずれによる接続不良を回避するために貫通導体６９より直径が大きいランド６１３を介して差動伝送線路６８に接続されている。   Further, as shown in FIG. 6 which is an enlarged plan view of the main part around the connection portion between the differential transmission line 68 and the differential through conductor 69 formed on the wiring board 51, the differential through conductor 69 has a poor connection due to misalignment. In order to avoid this, the differential transmission line 68 is connected via a land 613 having a diameter larger than that of the through conductor 69.

また、内層接地導体６４ｂは高周波信号をシールドするために差動伝送線路６８の周囲を取り囲むとともに差動伝送線路６８と差動貫通導体６９との接続部を円形状に取り囲むように形成されている。   The inner-layer ground conductor 64b is formed so as to surround the differential transmission line 68 and shield the connection between the differential transmission line 68 and the differential through conductor 69 in a circular shape so as to shield a high-frequency signal. .

また、絶縁基板５２の内層には差動貫通導体５９を円形状に取り囲むように開口部５１２が形成された内層接地導体５４ａが形成されている。   In addition, an inner layer ground conductor 54 a having an opening 512 so as to surround the differential through conductor 59 in a circular shape is formed in the inner layer of the insulating substrate 52.

なお、図５において、５１は配線基板、５３は信号配線群、５４（５４ａ，５４ｂ，５４ｃ，５４ｄ）は内層接地導体、５５は半導体素子、５６は導体バンプ、５７は電極パッド、５１０は接地貫通導体である。
特開２００１−５３３９７号公報 5, 51 is a wiring board, 53 is a signal wiring group, 54 (54a, 54b, 54c, 54d) is an inner layer ground conductor, 55 is a semiconductor element, 56 is a conductor bump, 57 is an electrode pad, and 510 is ground. It is a through conductor.
JP 2001-53397 A

しかしながら、従来の配線基板５１に搭載される半導体素子５５の動作速度が数十ＧＨｚと高速化するに従い、差動伝送線路５８と差動貫通導体５９との接続部において、ランド５１３（図５）を介して差動伝送線路５８と差動貫通導体５９が接続されるため、内層接地導体５４ｂとランド５１３との間に発生する容量成分によって特性インピーダンスが低下するために高周波信号の反射が発生していた。その結果、差動伝送線路５８と差動貫通導体５９との接続部において、高周波信号の反射損失が大きくなって高周波信号の伝送性が劣化し、半導体素子５５の作動性が損なわれるという問題点を有していた。   However, as the operation speed of the semiconductor element 55 mounted on the conventional wiring substrate 51 is increased to several tens GHz, the land 513 (FIG. 5) is formed at the connection portion between the differential transmission line 58 and the differential through conductor 59. Since the differential transmission line 58 and the differential through-conductor 59 are connected via each other, the characteristic impedance is reduced due to the capacitance component generated between the inner-layer ground conductor 54b and the land 513, so that a high-frequency signal is reflected. It was. As a result, at the connection portion between the differential transmission line 58 and the differential through conductor 59, the reflection loss of the high frequency signal is increased, the transmission performance of the high frequency signal is deteriorated, and the operability of the semiconductor element 55 is impaired. Had.

本発明は、上記問題点に鑑みて完成されたものであり、その目的は、差動伝送線路とそれに接続された差動貫通導体を有する配線基板において、差動伝送線路と差動貫通導体との接続部における高周波信号の反射損失を大幅に抑制することができ、その結果、半導体素子の作動性を良好なものとできるものとすることにある。   The present invention has been completed in view of the above problems, and an object of the present invention is to provide a differential transmission line and a differential through conductor in a wiring board having a differential transmission line and a differential through conductor connected thereto. The reflection loss of the high-frequency signal at the connecting portion can be greatly suppressed, and as a result, the operability of the semiconductor element can be improved.

本発明の配線基板は、複数の絶縁層を積層して成る絶縁基体の内層に形成された、互いに平行な一対の伝送線路から成る差動伝送線路と、該差動伝送線路の前記各伝送線路の一端から前記絶縁基体の主面または他の内層にかけて形成された、互いに平行な一対の貫通導体から成る差動貫通導体と、前記差動伝送線路が形成された内層に前記差動伝送線路を取り囲むとともに前記差動貫通導体との接続部を円形状に取り囲むように形成された内層接地導体と、前記絶縁基体の主面または他の内層に前記差動貫通導体を円形状に取り囲むように開口部が形成された接地導体とを具備しており、前記内層接地導体の前記差動伝送線路と前記差動貫通導体との接続部を円形状に取り囲む部位の直径が、前記接地導体の円形状の前記開口部の直径の１．１乃至２倍であることを特徴とするものである。   A wiring board according to the present invention includes a differential transmission line formed of a pair of parallel transmission lines formed on an inner layer of an insulating base formed by laminating a plurality of insulating layers, and each transmission line of the differential transmission line. A differential through conductor composed of a pair of parallel through conductors formed from one end of the insulating base to the main surface of the insulating base or another inner layer, and the differential transmission line on the inner layer in which the differential transmission line is formed. An inner-layer grounded conductor that surrounds and connects to the differential through-conductor in a circular shape, and an opening that surrounds the differential through-conductor in a circular shape on the main surface of the insulating base or another inner layer And a diameter of a portion surrounding the connecting portion between the differential transmission line and the differential through conductor of the inner layer ground conductor in a circular shape is a circular shape of the ground conductor. Of the diameter of the opening. Or it is characterized in that it is doubled.

本発明の配線基板は、複数の絶縁層を積層して成る絶縁基体の内層に形成された、互いに平行な一対の伝送線路から成る差動伝送線路と、差動伝送線路の各伝送線路の一端から絶縁基体の主面または他の内層にかけて形成された、互いに平行な一対の貫通導体から成る差動貫通導体と、差動伝送線路が形成された内層に差動伝送線路を取り囲むとともに差動貫通導体との接続部を円形状に取り囲むように形成された内層接地導体と、絶縁基体の主面または他の内層に差動貫通導体を円形状に取り囲むように開口部が形成された接地導体とを具備しており、内層接地導体の差動伝送線路と差動貫通導体との接続部を円形状に取り囲む部位の直径が、接地導体の円形状の開口部の直径の１．１乃至２倍であることから、差動伝送線路と差動貫通導体との接続部に形成されるランドと内層接地導体との間に発生する容量成分を削減することができるため、差動伝送線路の伝送線路と差動貫通導体の貫通導体との接続部における特性インピーダンスの低下による伝送線路の不連続性を抑制し、差動伝送線路と差動貫通導体との接続部における高周波信号の反射損失を抑えることが可能となる。   The wiring board of the present invention includes a differential transmission line formed of a pair of parallel transmission lines formed on an inner layer of an insulating base formed by laminating a plurality of insulating layers, and one end of each transmission line of the differential transmission line. A differential through conductor composed of a pair of through conductors parallel to each other, formed from the main surface of the insulating base to the main surface or other inner layer, and the differential transmission line surrounded by the inner layer in which the differential transmission line is formed An inner layer ground conductor formed so as to surround the connection portion with the conductor in a circular shape, and a ground conductor formed with an opening so as to surround the differential through conductor in a circular shape on the main surface of the insulating base or other inner layer The diameter of the portion surrounding the connection portion between the differential transmission line and the differential through conductor of the inner-layer ground conductor in a circular shape is 1.1 to 2 times the diameter of the circular opening of the ground conductor Therefore, the differential transmission line and the differential feedthrough Capacitance component generated between the land formed at the connection portion and the inner-layer ground conductor can be reduced, so the characteristics at the connection portion between the transmission line of the differential transmission line and the through conductor of the differential through conductor It is possible to suppress the discontinuity of the transmission line due to the decrease in impedance, and to suppress the high-frequency signal reflection loss at the connection portion between the differential transmission line and the differential through conductor.

その結果、差動伝送線路と差動貫通導体との接続部における高周波信号の反射損失を極めて小さくすることができるので、本発明の配線基板に搭載される半導体素子の高周波領域における作動性を非常に良好なものとすることができる。   As a result, the reflection loss of the high-frequency signal at the connection portion between the differential transmission line and the differential through conductor can be extremely reduced, so that the operability in the high-frequency region of the semiconductor element mounted on the wiring board of the present invention is extremely high. Can be excellent.

本発明の配線基板について以下に詳細に説明する。図１は本発明の配線基板の実施の形態の一例を示す断面図であり、図２は図１の配線基板における差動貫通導体の周辺部の要部拡大平面図である。   The wiring board of the present invention will be described in detail below. FIG. 1 is a cross-sectional view showing an example of an embodiment of a wiring board according to the present invention, and FIG. 2 is an enlarged plan view of a main part of the periphery of a differential through conductor in the wiring board of FIG.

本発明の配線基板１においては、絶縁基板２を構成する絶縁層２ａ〜２ｆは基本的には同じ比誘電率を有する絶縁材料で形成されている。絶縁層２ｃ上には信号配線群３が形成され、絶縁層２ｂ，２ｄ上には信号配線群３に対向させて広面積の内層接地導体層４ａ，４ｂが形成されており、信号配線群３の各信号配線はストリップ線路構造を有している。内層接地導体層４ａ，４ｂは、配線基板１の仕様に応じて入れ換えて配置されることもある。   In the wiring board 1 of the present invention, the insulating layers 2a to 2f constituting the insulating substrate 2 are basically formed of an insulating material having the same relative dielectric constant. The signal wiring group 3 is formed on the insulating layer 2c, and the inner ground conductor layers 4a and 4b having large areas are formed on the insulating layers 2b and 2d so as to face the signal wiring group 3, and the signal wiring group 3 Each of the signal wirings has a stripline structure. The inner ground conductor layers 4a and 4b may be interchanged depending on the specifications of the wiring board 1.

また、信号配線群３の各信号配線の配線幅および信号配線群３と内層接地導体層４ａ，４ｂとの間に介在する絶縁層２ｂ，２ｃの厚みを設定することにより、信号配線群３の特性インピーダンスを任意の値に設定することができるため、良好な伝送特性を有する信号配線群３を形成することが可能となる。信号配線群３の特性インピーダンスは一般的には５０Ωに設定される。なお、信号配線群３に含まれる複数の信号配線は、それぞれ異なる電気信号を伝送するものとしてもよい。   Further, by setting the wiring width of each signal wiring of the signal wiring group 3 and the thickness of the insulating layers 2b and 2c interposed between the signal wiring group 3 and the inner ground conductor layers 4a and 4b, the signal wiring group 3 Since the characteristic impedance can be set to an arbitrary value, the signal wiring group 3 having good transmission characteristics can be formed. The characteristic impedance of the signal wiring group 3 is generally set to 50Ω. The plurality of signal wirings included in the signal wiring group 3 may transmit different electrical signals.

図１の例では、配線基板１の上面には高速で動作するＩＣ，ＬＳＩ等の半導体集積回路素子や半導体レーザ（ＬＤ），フォトダイオード（ＰＤ）等の光半導体素子等の半導体素子５や電子部品が搭載され、錫−鉛（Ｓｎ−Ｐｂ）合金等の半田や金（Ａｕ）等から成る導体バンプ６および半導体素子５を接続するための電極パッド７を介して差動伝送線路８に電気的に接続されている。また、配線基板１の下面には、半導体素子５に信号の入出力および電源供給を行なうための外部接続用電極１１が形成されている。   In the example of FIG. 1, on the upper surface of the wiring substrate 1, a semiconductor integrated circuit element such as an IC or LSI that operates at high speed, a semiconductor element 5 such as an optical semiconductor element such as a semiconductor laser (LD) or a photodiode (PD), or an electronic device. The component is mounted and electrically connected to the differential transmission line 8 via the electrode pads 7 for connecting the conductor bumps 6 made of solder such as tin-lead (Sn—Pb) alloy, gold (Au), and the like and the semiconductor element 5. Connected. Further, on the lower surface of the wiring substrate 1, external connection electrodes 11 for inputting / outputting signals and supplying power to the semiconductor element 5 are formed.

また、差動伝送線路８は、絶縁層２ｃの上面に内層接地導体層４ａ，４ｂとの間に形成されたストリップ構造の一対の伝送線路から成り、外部と信号の入出力を行なうために差動貫通導体９を介して外部接続用電極１１に電気的に接続されており、また、差動貫通導体９、電極パッド７および錫−鉛（Ｓｎ−Ｐｂ）合金等の半田や金（Ａｕ）等から成る導体バンプ６を介して半導体素子５の電極に電気的に接続されている。   The differential transmission line 8 is composed of a pair of strip-shaped transmission lines formed between the inner ground conductor layers 4a and 4b on the upper surface of the insulating layer 2c, and is used to input / output signals to / from the outside. It is electrically connected to the external connection electrode 11 via the dynamic through conductor 9, and also includes solder such as the differential through conductor 9, the electrode pad 7 and a tin-lead (Sn—Pb) alloy, or gold (Au). It is electrically connected to the electrodes of the semiconductor element 5 through conductor bumps 6 made of, for example.

また、差動貫通導体９は互いに平行に形成された一対の貫通導体９ａ，９ｂから成り、差動貫通導体９の一端は差動伝送線路８に電気的に接続され、他端は外部接続用電極１１に電気的に接続されている。   The differential through conductor 9 includes a pair of through conductors 9a and 9b formed in parallel to each other. One end of the differential through conductor 9 is electrically connected to the differential transmission line 8 and the other end is for external connection. It is electrically connected to the electrode 11.

また、信号配線群３および差動伝送線路８の構造は、信号配線群３に対向して電源配線層もしくは内層接地導体層を形成して成るマイクロストリップ線路構造の他に、信号配線群３の上下に電源配線層もしくは内層接地導体層を形成して成るストリップ線路構造、また信号配線群３の各信号配線に隣接して所定間隔をもって同一面電源配線層もしくは同一面接地導体層を形成して成るコプレーナ線路構造であってもよい。   Further, the signal wiring group 3 and the differential transmission line 8 have a structure of the signal wiring group 3 in addition to the microstrip line structure formed by forming a power wiring layer or an inner ground conductor layer so as to face the signal wiring group 3. A strip line structure in which a power wiring layer or an inner ground conductor layer is formed above and below, and a single power wiring layer or a single ground conductor layer is formed adjacent to each signal wiring of the signal wiring group 3 with a predetermined interval. It may be a coplanar line structure.

また、配線基板１にチップ抵抗，薄膜抵抗，コイルインダクタ，クロスインダクタ，チップコンデンサまたは電解コンデンサ等を搭載して、電子回路モジュール等を構成してもよい。   Moreover, a chip resistor, a thin film resistor, a coil inductor, a cross inductor, a chip capacitor, an electrolytic capacitor, or the like may be mounted on the wiring board 1 to constitute an electronic circuit module or the like.

また、各絶縁層２ａ〜２ｆの平面視における形状は、正方形状や長方形状の他に、菱形状，六角形状または八角形状等の形状であってもよい。   Further, the shape of each of the insulating layers 2a to 2f in a plan view may be a rhombus shape, a hexagonal shape, an octagonal shape, or the like in addition to a square shape or a rectangular shape.

そして、このような本発明の配線基板１は、半導体素子収納用パッケージ等の電子部品収納用パッケージや電子部品搭載用基板、多数の半導体素子が搭載されるいわゆるマルチチップモジュールやマルチチップパッケージ、あるいはマザーボード等として使用される。   Such a wiring board 1 of the present invention includes an electronic component storage package such as a semiconductor element storage package, an electronic component mounting substrate, a so-called multichip module or multichip package on which a large number of semiconductor elements are mounted, or Used as a motherboard.

本発明の配線基板について図２を用いて詳細に説明する。差動貫通導体９の貫通導体９ａ，９ｂと差動伝送線路８の伝送線路８ａ，８ｂとは、ランド１３（１３ａ，１３ｂ）を介して接続され、差動伝送線路８が形成された絶縁層２ｂに差動伝送線路８を取り囲むとともに差動貫通導体９との接続部を円形状に取り囲むように形成された内層接地導体４ｂと、絶縁基体２ｂの主面または他の内層（図１では他の内層）に差動貫通導体９を円形状に取り囲むように開口部１２が形成された接地導体（図１では内層接地導体４ａ）とを具備し、内層接地導体４ｂの差動伝送線路８と差動貫通導体９との接続部を円形状に取り囲む部位１４の直径が、内層接地導体４ａの円形状の開口部１２の直径の１．１乃至２倍であるため、差動伝送線路８と差動貫通導体９との接続部においてランド１３と内層接地導体４ｂとの間に発生する容量成分を低減し特性インピーダンスの低下を抑制することによって、差動伝送線路８と差動貫通導体９との接続部における高周波信号の反射損失を抑えることが可能となる。   The wiring board of the present invention will be described in detail with reference to FIG. The through conductors 9a and 9b of the differential through conductor 9 and the transmission lines 8a and 8b of the differential transmission line 8 are connected via the lands 13 (13a and 13b), and the insulating layer in which the differential transmission line 8 is formed. The inner layer ground conductor 4b is formed so as to surround the differential transmission line 8 in 2b and the connection portion with the differential through conductor 9 in a circular shape, and the main surface or other inner layer of the insulating base 2b (other in FIG. 1) And a ground conductor (inner layer ground conductor 4a in FIG. 1) having an opening 12 so as to surround the differential through conductor 9 in a circular shape, and a differential transmission line 8 of the inner layer ground conductor 4b. Since the diameter of the portion 14 surrounding the connecting portion with the differential through conductor 9 in a circular shape is 1.1 to 2 times the diameter of the circular opening 12 of the inner layer ground conductor 4a, the differential transmission line 8 and The land 13 and the inner layer ground conductor at the connection with the differential through conductor 9 By reducing the capacitance component generated between the differential transmission line 8b and the characteristic impedance, it is possible to suppress the reflection loss of the high-frequency signal at the connection portion between the differential transmission line 8 and the differential through conductor 9. .

次に、図３に基き本発明における差動伝送線路８について説明する。図３は本発明の配線基板１の実施の形態の一例における差動伝送線路８の周辺部を示す要部拡大断面図である。図３において、差動伝送線路８は互いに平行に形成された一対の伝送線路８ａ，８ｂから成る。そして、差動伝送線路８は、伝送線路８ａ，８ｂの幅，間隔，厚み、および伝送線路８ａ，８ｂと内層接地導体層４ａ，４ｂとの間に介在する絶縁層２ｂ，２ｃの厚みを調整し設定することにより、差動伝送線路８の特性インピーダンスを所望の値に設定することができる。その結果、良好な伝送特性を有する差動伝送線路８を形成することが可能となる。差動伝送線路８の特性インピーダンスは一般的には１００Ωに設定される。   Next, the differential transmission line 8 according to the present invention will be described with reference to FIG. FIG. 3 is an enlarged cross-sectional view showing a main part of the periphery of the differential transmission line 8 in the example of the embodiment of the wiring board 1 of the present invention. In FIG. 3, the differential transmission line 8 includes a pair of transmission lines 8a and 8b formed in parallel to each other. The differential transmission line 8 adjusts the width, spacing, and thickness of the transmission lines 8a and 8b, and the thickness of the insulating layers 2b and 2c interposed between the transmission lines 8a and 8b and the inner ground conductor layers 4a and 4b. Thus, the characteristic impedance of the differential transmission line 8 can be set to a desired value. As a result, the differential transmission line 8 having good transmission characteristics can be formed. The characteristic impedance of the differential transmission line 8 is generally set to 100Ω.

次に、図４において、差動貫通導体９について説明する。差動貫通導体９は一対の互いに平行な貫通導体９ａ、９ｂから形成され、開口部１２によって接地導体４ａと電気的に絶縁され、一端が差動伝送線路８に、他端が外部接続用電極１１に電気的に接続されている。また、差動伝送線路８の特性インピーダンスと差動貫通導体９の特性インピーダンスが同じになるようにするために、差動貫通導体９および接地貫通導体１０の直径を変更したり、更にこれらの相対位置を調整すればよい。   Next, the differential through conductor 9 will be described with reference to FIG. The differential through conductor 9 is formed of a pair of parallel through conductors 9a and 9b, and is electrically insulated from the ground conductor 4a by the opening 12, with one end being the differential transmission line 8 and the other end being an external connection electrode. 11 is electrically connected. Further, in order to make the characteristic impedance of the differential transmission line 8 and the characteristic impedance of the differential through conductor 9 the same, the diameters of the differential through conductor 9 and the ground through conductor 10 may be changed, The position may be adjusted.

本発明の配線基板１において、絶縁層２ａ〜２ｆは例えばセラミックグリーンシート積層法によって形成される。この場合、絶縁層２ａ〜２ｆは、酸化アルミニウム質焼結体，窒化アルミニウム質焼結体，炭化珪素質焼結体，窒化珪素質焼結体，ムライト質焼結体またはガラスセラミックス等の無機絶縁材料から成る。また、絶縁層２ａ〜２ｆは、ポリイミド，エポキシ樹脂，フッ素樹脂，ポリノルボルネンまたはベンゾシクロブテン等の有機絶縁材料、あるいはセラミック粉末等の無機絶縁物粉末をエポキシ樹脂等の熱硬化性樹脂で結合して成る複合絶縁材料等の電気的な絶縁材料から成っていてもよい。   In the wiring board 1 of the present invention, the insulating layers 2a to 2f are formed by, for example, a ceramic green sheet lamination method. In this case, the insulating layers 2a to 2f are made of an inorganic insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, a silicon nitride sintered body, a mullite sintered body, or a glass ceramic. Made of material. The insulating layers 2a to 2f are formed by bonding an organic insulating material such as polyimide, epoxy resin, fluororesin, polynorbornene or benzocyclobutene, or inorganic insulating powder such as ceramic powder with a thermosetting resin such as epoxy resin. It may be made of an electrically insulating material such as a composite insulating material.

これらの絶縁層２ａ〜２ｆは以下のようにして作製される。絶縁層２ａ〜２ｆが例えば酸化アルミニウム質焼結体から成る場合、まず、酸化アルミニウム，酸化珪素，酸化カルシウムまたは酸化マグネシウム等の原料粉末に適当な有機バインダや溶剤等を添加混合して泥漿状となし、これをドクターブレード法等を採用してシート状となすことによってセラミックグリーンシートを得る。そして、セラミックグリーンシートに信号配線群３および各導体層と成る金属ペーストを所定のパターンに印刷塗布して、これらを上下に積層し、最後にこの積層体を還元雰囲気中で約１６００℃の温度で焼成することによって製作される。   These insulating layers 2a to 2f are manufactured as follows. When the insulating layers 2a to 2f are made of, for example, an aluminum oxide sintered body, first, an appropriate organic binder or solvent is added to and mixed with raw material powders such as aluminum oxide, silicon oxide, calcium oxide or magnesium oxide to form a slurry. None, by adopting a doctor blade method or the like to form a sheet, a ceramic green sheet is obtained. Then, the signal paste group 3 and the metal paste which becomes each conductor layer are printed and applied in a predetermined pattern on the ceramic green sheet, and these are laminated up and down, and finally the laminated body is heated to a temperature of about 1600 ° C. in a reducing atmosphere. It is manufactured by firing at

また、絶縁層２ａ〜２ｆがエポキシ樹脂から成る場合、まず酸化アルミニウム質焼結体から成るセラミックスを混合した熱硬化性のエポキシ樹脂、あるいはガラス繊維を織り込んだ布にエポキシ樹脂を含浸させて成るガラスエポキシ樹脂等から成る絶縁層の上面に、有機樹脂前駆体をスピンコート法もしくはカーテンコート法等により被着させ、これを熱硬化処理することによって絶縁層を形成する。この絶縁層と、銅層を無電解めっき法や蒸着法等の薄膜形成技術およびフォトリソグラフィ技術を採用することによって形成して成る薄膜配線導体層とを交互に積層し、約１７０℃程度の温度で加熱硬化することによって製作される。   When the insulating layers 2a to 2f are made of an epoxy resin, first, a glass made by impregnating an epoxy resin into a thermosetting epoxy resin mixed with ceramics made of an aluminum oxide sintered body or a cloth woven with glass fibers. An organic resin precursor is deposited on the upper surface of an insulating layer made of an epoxy resin or the like by a spin coating method or a curtain coating method, and the insulating layer is formed by heat-curing the organic resin precursor. This insulating layer and a thin film wiring conductor layer formed by adopting a copper layer by employing a thin film forming technique such as an electroless plating method or a vapor deposition method and a photolithography technique are alternately laminated, and a temperature of about 170 ° C. It is manufactured by heating and curing.

これらの絶縁層２ａ〜２ｆの厚みは、使用する材料の特性に応じて、要求される仕様に対応する機械的強度や電気的特性等の条件を満たすように設定される。   The thicknesses of these insulating layers 2a to 2f are set so as to satisfy the conditions such as mechanical strength and electrical characteristics corresponding to the required specifications according to the characteristics of the materials used.

また、信号配線群３、差動伝送線路８および内層接地導体層４は、例えばタングステン（Ｗ），モリブデン（Ｍｏ），モリブデン−マンガン（Ｍｏ−Ｍｎ），銅（Ｃｕ），銀（Ａｇ）または銀−パラジウム（Ａｇ−Ｐｄ）等の金属粉末メタライズ、あるいは銅（Ｃｕ），銀（Ａｇ），ニッケル（Ｎｉ），クロム（Ｃｒ），チタン（Ｔｉ），金（Ａｕ）またはニオブ（Ｎｂ）やそれらの合金等の金属材料の薄膜等により形成すればよい。   The signal wiring group 3, the differential transmission line 8 and the inner ground conductor layer 4 are made of, for example, tungsten (W), molybdenum (Mo), molybdenum-manganese (Mo-Mn), copper (Cu), silver (Ag) or Metal powder metallization such as silver-palladium (Ag-Pd), copper (Cu), silver (Ag), nickel (Ni), chromium (Cr), titanium (Ti), gold (Au) or niobium (Nb) What is necessary is just to form by thin films etc. of metal materials, such as those alloys.

具体的には、信号配線群３や内層接地導体層４をＷの金属粉末メタライズで形成する場合、Ｗ粉末に適当な有機バインダや溶剤等を添加混合して得た金属ペーストを、絶縁層２ａ〜２ｆと成るセラミックグリーンシートに所定のパターンで印刷塗布し、これをセラミックグリーンシートの積層体とともに焼成することによって形成することができる。   Specifically, when the signal wiring group 3 and the inner ground conductor layer 4 are formed of W metal powder metallization, a metal paste obtained by adding and mixing an appropriate organic binder or solvent to the W powder is used as the insulating layer 2a. It can be formed by printing and applying to a ceramic green sheet of ˜2f in a predetermined pattern, and firing this together with a laminate of ceramic green sheets.

また、信号配線群３や内層接地導体層４を金属薄膜で形成する場合、例えばスパッタリング法，真空蒸着法またはメッキ法により金属薄膜を形成した後、フォトリソグラフィ法により所定の配線パターンに形成することができる。   When the signal wiring group 3 and the inner ground conductor layer 4 are formed of a metal thin film, for example, a metal thin film is formed by a sputtering method, a vacuum evaporation method or a plating method, and then formed into a predetermined wiring pattern by a photolithography method. Can do.

このような配線基板１は、信号配線群３が配設されている絶縁層２ａ〜２ｆの比誘電率に応じて、信号配線群３および差動伝送線路８の伝送線路８ａ，８ｂの配線幅，配線厚み，配線間隔を所望の値に設定することで、信号配線群３の各信号配線の特性インピーダンス値および差動伝送線路８の特性インピーダンス値を所望の値とすることができる。   Such a wiring board 1 has the wiring widths of the transmission lines 8a and 8b of the signal wiring group 3 and the differential transmission line 8 according to the relative dielectric constant of the insulating layers 2a to 2f on which the signal wiring group 3 is disposed. By setting the wiring thickness and the wiring interval to desired values, the characteristic impedance value of each signal wiring of the signal wiring group 3 and the characteristic impedance value of the differential transmission line 8 can be set to desired values.

なお、本発明は上記の実施の形態の例に限定されるものではなく、本発明の要旨を逸脱しない範囲で種々の変更を行なうことは何ら差し支えない。例えば、差動貫通導体９が接続される差動伝送線路８は配線基板１の主面に形成されていてもよい。さらに、差動貫通導体９が電気的に接続される二次実装部は、コネクタやワイヤボンディングパッド等でもよい。また、差動貫通導体９は、配線基板１の異なる絶縁層に形成された差動伝送線路８同士の接続に用いてもよい。   Note that the present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the scope of the present invention. For example, the differential transmission line 8 to which the differential through conductor 9 is connected may be formed on the main surface of the wiring board 1. Further, the secondary mounting portion to which the differential through conductor 9 is electrically connected may be a connector or a wire bonding pad. Further, the differential through conductor 9 may be used to connect the differential transmission lines 8 formed in different insulating layers of the wiring board 1.

本発明の図１の構成の配線基板１を以下のようにして作製した。酸化アルミニウム質焼結体から成る各厚みが０．２ｍｍの絶縁層２ａ〜２ｆを上述したセラミックグリーンシート積層法によって積層し形成することにより、絶縁基板２を作製した。このとき、信号配線群３、差動伝送線路８、内層接地導体層４、差動貫通導体９および接地貫通導体１０を、上述のＷの金属粉末メタライズで形成した。   The wiring board 1 having the configuration shown in FIG. 1 according to the present invention was manufactured as follows. The insulating substrate 2 was produced by laminating and forming the insulating layers 2a to 2f each made of an aluminum oxide sintered body having a thickness of 0.2 mm by the ceramic green sheet laminating method described above. At this time, the signal wiring group 3, the differential transmission line 8, the inner ground conductor layer 4, the differential through conductor 9, and the ground through conductor 10 were formed of the above-described W metal powder metallization.

そして、この場合、図２に示すように、比誘電率が５．２の絶縁基板２ｂに、伝送線路８ａ，８ｂのそれぞれの配線幅が６５μｍ、伝送線路８ａ，８ｂ間の間隔が１３５μｍである差動伝送線路８を形成した。また、各直径が５０μｍで互いの間隔が０．３ｍｍの一対の貫通導体９ａ，９ｂから成る差動貫通導体９を同心円状に取り囲むように、各直径が５０μｍで互いの間隔が０．１５ｍｍの６本の接地貫通導体１０、および内層接地導体４ａと差動貫通導体９を絶縁する開口部１２を形成した。開口部１２の形状は、それぞれ貫通導体９ａ，９ｂを中心とする各直径１５０μｍの２つの円を、それらの円の接線で結んだ楕円形状（長円形状）である。差動伝送線路８と差動貫通導体９は直径１００μｍのランド１３を介して接続されている。   In this case, as shown in FIG. 2, the wiring width of each of the transmission lines 8 a and 8 b is 65 μm and the distance between the transmission lines 8 a and 8 b is 135 μm on the insulating substrate 2 b having a relative dielectric constant of 5.2. A differential transmission line 8 was formed. Each diameter is 50 μm and the distance between each other is 0.15 mm so as to concentrically surround the differential penetration conductor 9 composed of a pair of penetration conductors 9 a and 9 b each having a diameter of 50 μm and a distance of 0.3 mm. Six grounding through conductors 10 and openings 12 that insulate the inner layer grounding conductor 4a from the differential through conductors 9 were formed. The shape of the opening 12 is an elliptical shape (oval shape) in which two circles each having a diameter of 150 μm centering on the through conductors 9a and 9b are connected by tangent lines of the circles. The differential transmission line 8 and the differential through conductor 9 are connected via a land 13 having a diameter of 100 μm.

さらに、高周波信号をシールドするために、内層接地導体４ｂは差動伝送線路８の周囲を取り囲むとともに、差動伝送線路８と差動貫通導体９との接続部を円形状に取り囲むように形成されている。その接続部を円形状に取り囲む部分は、それぞれランド１３ａ，１３ｂを中心とする各直径２５０μｍの２つの円を、それらの円の接線で結んだ楕円形状（長円形状）で形成されている。   Further, in order to shield the high frequency signal, the inner layer ground conductor 4b surrounds the periphery of the differential transmission line 8 and is formed so as to surround the connection portion between the differential transmission line 8 and the differential through conductor 9 in a circular shape. ing. A portion surrounding the connecting portion in a circular shape is formed in an elliptical shape (oval shape) in which two circles each having a diameter of 250 μm centering on the lands 13 a and 13 b are connected by tangent lines of the circles.

上記構成の差動伝送線路８について、４０ＧＨｚの高周波信号を貫通導体８ａ，８ｂに位相差１８０度で入力したところ、差動伝送線路８と差動貫通導体９との接続部における伝送線路の不連続性を小さくできるため、高周波信号の反射損失を抑えることが可能となった。すなわち、差動伝送線路８と差動貫通導体９との接続部における高周波信号の反射レベルは−２９ｄＢ程度となり、きわめて小さい値であった。   For the differential transmission line 8 configured as described above, when a high frequency signal of 40 GHz is input to the through conductors 8 a and 8 b with a phase difference of 180 degrees, the transmission line is not connected at the connection between the differential transmission line 8 and the differential through conductor 9. Since continuity can be reduced, reflection loss of high-frequency signals can be suppressed. That is, the reflection level of the high-frequency signal at the connection portion between the differential transmission line 8 and the differential through conductor 9 is about −29 dB, which is a very small value.

また、比較例１として、差動伝送線路８と差動貫通導体９との接続部を円形状に取り囲む部分を、上層と同じそれぞれランド１３ａ，１３ｂを中心とする各直径１５０μｍの２つの円を、それらの円の接線で結んだ楕円形状（長円形状）で形成した配線基板においては、差動貫通導体９と差動伝送線路８との接続部における高周波信号の反射レベルは−２０ｄＢ程度と大きくなった。   Further, as Comparative Example 1, a portion surrounding the connection portion between the differential transmission line 8 and the differential through conductor 9 in a circular shape is formed by using two circles each having a diameter of 150 μm centered on the lands 13a and 13b, respectively. In the wiring board formed in an elliptical shape (oval shape) connected by tangent lines of these circles, the reflection level of the high-frequency signal at the connection portion between the differential through conductor 9 and the differential transmission line 8 is about −20 dB. It became bigger.

本発明の配線基板の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the wiring board of this invention. 本発明の配線基板の実施の形態の一例を示す要部拡大平面図である。It is a principal part enlarged plan view which shows an example of embodiment of the wiring board of this invention. 本発明の配線基板の実施の形態の一例を示す部分拡大断面図である。It is a partial expanded sectional view which shows an example of embodiment of the wiring board of this invention. 従来の配線基板の一例の部分拡大平面図である。It is a partial enlarged plan view of an example of a conventional wiring board. 従来の配線基板の一例の断面図である。It is sectional drawing of an example of the conventional wiring board. 従来の配線基板の一例の部分拡大平面図である。It is a partial enlarged plan view of an example of a conventional wiring board.

符号の説明Explanation of symbols

１・・・配線基板
２・・・絶縁基板
２ａ〜２ｆ・・・絶縁層
３・・・信号配線群
４・・・内層接地導体層
５・・・半導体素子
６・・・導体バンプ
７・・・電極パッド
８・・・差動伝送線路
８ａ，８ｂ・・・伝送線路
９・・・差動貫通導体
９ａ，９ｂ・・・貫通導体
１０・・・接地貫通導体
１２・・・開口部
１３・・・ランド
１４・・・差動伝送線路と差動貫通導体との接続部を円形状に取り囲む部位 DESCRIPTION OF SYMBOLS 1 ... Wiring board 2 ... Insulating board 2a-2f ... Insulating layer 3 ... Signal wiring group 4 ... Inner layer grounding conductor layer 5 ... Semiconductor element 6 ... Conductor bump 7 ... · Electrode pad 8 ··· Differential transmission lines 8a and 8b ··· Transmission line 9 ··· Differential through conductors 9a and 9b ··· Penetration conductor 10 ··· Grounding penetration conductor 12 ··· Opening portion 13 · ..Land 14: a portion surrounding the connection portion between the differential transmission line and the differential through conductor in a circular shape

Claims (1)

複数の絶縁層を積層して成る絶縁基体の内層に形成された、互いに平行な一対の伝送線路から成る差動伝送線路と、該差動伝送線路の前記各伝送線路の一端から前記絶縁基体の主面または他の内層にかけて形成された、互いに平行な一対の貫通導体から成る差動貫通導体と、前記差動伝送線路が形成された内層に前記差動伝送線路を取り囲むとともに前記差動貫通導体との接続部を円形状に取り囲むように形成された内層接地導体と、前記絶縁基体の主面または他の内層に前記差動貫通導体を円形状に取り囲むように開口部が形成された接地導体とを具備しており、前記内層接地導体の前記差動伝送線路と前記差動貫通導体との接続部を円形状に取り囲む部位の直径が、前記接地導体の円形状の前記開口部の直径の１．１乃至２倍であることを特徴とする配線基板。 A differential transmission line composed of a pair of transmission lines parallel to each other, formed on an inner layer of an insulating base formed by laminating a plurality of insulating layers, and one end of each transmission line of the differential transmission line from the one end of the transmission base A differential through conductor composed of a pair of through conductors parallel to each other formed over a main surface or other inner layer, and the differential transmission line surrounded by the inner layer in which the differential transmission line is formed and the differential through conductor An inner layer ground conductor formed so as to surround the connecting portion in a circular shape, and a ground conductor formed such that an opening is formed so as to surround the differential through conductor in a circular shape on the main surface of the insulating base or another inner layer And the diameter of the portion surrounding the connection portion between the differential transmission line and the differential through conductor of the inner layer ground conductor in a circular shape is equal to the diameter of the circular opening of the ground conductor. 1.1 to 2 times Wiring board characterized.
JP2004050700A 2004-02-26 2004-02-26 Wiring board Pending JP2005243864A (en)

Priority Applications (1)

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JP2007123743A (en) * 2005-10-31 2007-05-17 Sony Corp Flex-rigid board, optical transmission/reception module and optical transmission/reception device
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JP2007123743A (en) * 2005-10-31 2007-05-17 Sony Corp Flex-rigid board, optical transmission/reception module and optical transmission/reception device
US8304662B2 (en) 2006-06-01 2012-11-06 Fujitsu Limited Buildup board, and electronic component and apparatus having the buildup board
JP2008010848A (en) * 2006-06-01 2008-01-17 Fujitsu Ltd Buildup board, and electronic component and electronic instrument having the same
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JP2010506380A (en) * 2006-10-13 2010-02-25 日本電気株式会社 Multilayer board
JP2009021511A (en) * 2007-07-13 2009-01-29 Ricoh Co Ltd Printed wiring board, and electronic device
JP2009212400A (en) * 2008-03-05 2009-09-17 Ngk Spark Plug Co Ltd High-frequency package
JP2012174781A (en) * 2011-02-18 2012-09-10 Mitsubishi Electric Corp High frequency signal connection structure
JP2013048197A (en) * 2011-07-26 2013-03-07 Kyocer Slc Technologies Corp Wiring board
JP2014107493A (en) * 2012-11-29 2014-06-09 Mitsubishi Electric Corp Multilayer substrate, circuit board, information processing device, sensor device and communication device
JP2014107494A (en) * 2012-11-29 2014-06-09 Mitsubishi Electric Corp Multilayer substrate, circuit board, information processing device, sensor device and communication device
DE112016006064B4 (en) 2015-12-26 2023-06-01 Intel Corporation Shielded bundle connection device and method of making the same and system comprising the same
JP2019096691A (en) * 2017-11-21 2019-06-20 日本オクラロ株式会社 Printed circuit board and optical transceiver including printed circuit board
JP7534079B2 (en) 2018-12-27 2024-08-14 テクトロニクス・インコーポレイテッド Multilayer Circuit Board

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