JP4373752B2 - Wiring board - Google Patents

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JP4373752B2
JP4373752B2 JP2003336309A JP2003336309A JP4373752B2 JP 4373752 B2 JP4373752 B2 JP 4373752B2 JP 2003336309 A JP2003336309 A JP 2003336309A JP 2003336309 A JP2003336309 A JP 2003336309A JP 4373752 B2 JP4373752 B2 JP 4373752B2
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conductor
differential
ground
conductors
transmission line
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JP2005108893A (en
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幸喜 川畑
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring board which decreases a reflection loss in high frequency signals which is caused by characteristic impedance mismatching at a connection between a differential transmission line and a differential through conductor, to an irreducible minimum and which enables a semiconductor device to operate well resultantly. <P>SOLUTION: The wiring board 1 is equipped with an insulating board 2 where a differential through conductor 9 composed of a pair of parallel through conductors, a plurality of grounding through conductors 10 formed so as to surround the differential through conductor 9 concentrically, and a grounding conductor layer 4b where an opening 12 surrounding the differential through conductor 9 along the grounding through conductors 10 is provided are provided. The grounding conductor layer 4b is so formed as to enable the opening edge of the opening 12 to pass through the centers of the grounding through conductors 10. <P>COPYRIGHT: (C)2005,JPO&amp;NCIPI

Description

本発明は、高速で作動する半導体素子や光半導体素子等の電子部品を搭載するのに好適な、差動伝送線路を有する配線基板に関するものである。   The present invention relates to a wiring board having a differential transmission line suitable for mounting electronic components such as semiconductor elements and optical semiconductor elements that operate at high speed.

従来、高速で作動する半導体素子や光半導体素子等の電子部品を搭載するための配線基板においては、従来の配線基板の例の断面図である図４および図４の配線基板に形成された差動貫通導体の周囲の開口部周辺の要部拡大平面図である図５に示すように、高速な高周波信号を正確かつ効率よく伝播させるために、差動伝送線路４８と外部入出力用電極４１１との接続には差動貫通導体４９を用いている。差動伝送線路４８に接続される差動貫通導体４９は、一対の信号貫通導体５９（５９ａ，５９ｂ）から構成され、その周囲を接地貫通導体５１０で同心円状に取り囲むことによって擬似同軸構造を形成している。この差動貫通導体４９の特性インピーダンスは、差動貫通導体４９に接続される差動伝送線路４８の特性インピーダンスと一致するように、配線基板４２の絶縁層４２ａ〜４２ｆの材料や、差動貫通導体４９および接地導体５１０の直径を変更したり、更にこれらの相対位置を互いに変更することによって決定されている。   Conventionally, in wiring boards for mounting electronic components such as semiconductor elements and optical semiconductor elements that operate at high speed, the difference formed in the wiring boards of FIGS. 4 and 4 which are sectional views of examples of conventional wiring boards. As shown in FIG. 5 which is an enlarged plan view of the main part around the opening around the dynamic through conductor, in order to propagate a high-speed high-frequency signal accurately and efficiently, the differential transmission line 48 and the external input / output electrode 411 are used. A differential through conductor 49 is used for the connection. The differential through conductor 49 connected to the differential transmission line 48 is composed of a pair of signal through conductors 59 (59a, 59b), and the surroundings are concentrically surrounded by the ground through conductor 510 to form a pseudo coaxial structure. is doing. The material of the insulating layers 42a to 42f of the wiring board 42 and the differential penetration are set so that the characteristic impedance of the differential penetration conductor 49 matches the characteristic impedance of the differential transmission line 48 connected to the differential penetration conductor 49. It is determined by changing the diameters of the conductor 49 and the ground conductor 510 and further changing their relative positions.

なお、図４において、４１は配線基板、４３は信号配線群、４４（４４ａ，４４ｂ，４４ｃ）は接地導体層、４５は半導体素子、４６は導体バンプ、４７は電極パッド、４１０は接地貫通導体である。また、図５において、５２ｄは絶縁層、５４ｂは接地導体層、５１２は接地導体層５４ｂに形成された開口部である。
特開２００１−５３３９７号公報 特開２０００−１３８４３３号公報 In FIG. 4, 41 is a wiring board, 43 is a signal wiring group, 44 (44a, 44b, 44c) is a grounding conductor layer, 45 is a semiconductor element, 46 is a conductor bump, 47 is an electrode pad, and 410 is a grounding through conductor. It is. In FIG. 5, 52d is an insulating layer, 54b is a ground conductor layer, and 512 is an opening formed in the ground conductor layer 54b.
JP 2001-53397 A JP 2000-138433 A

しかしながら、従来の配線基板４１においては、差動伝送線路４８と外部入出力電極４１１との接続に用いられる差動貫通導体４９が接地導体層５４ｂに設けられた開口部５１２を貫通する際に、差動貫通導体４９と接地導体層５４ｂとの間に電気的な容量成分が生じることから、接地導体層５４ｂ付近の差動貫通導体４９の特性インピーダンスが低くなっていた。その結果、差動貫通導体４９自体あるいは差動伝送線路４８と差動貫通導体４９との接続において特性インピーダンスの不整合が起こり、高周波信号の反射損失が大きくなって高周波信号の伝送性が劣化し、半導体素子４５の作動性が損なわれるという問題点を有していた。   However, in the conventional wiring board 41, when the differential through conductor 49 used for connecting the differential transmission line 48 and the external input / output electrode 411 passes through the opening 512 provided in the ground conductor layer 54b, Since an electrical capacitance component is generated between the differential through conductor 49 and the ground conductor layer 54b, the characteristic impedance of the differential through conductor 49 near the ground conductor layer 54b is low. As a result, mismatching of characteristic impedance occurs in the differential through conductor 49 itself or in the connection between the differential transmission line 48 and the differential through conductor 49, the reflection loss of the high frequency signal is increased, and the transmission performance of the high frequency signal is deteriorated. There is a problem that the operability of the semiconductor element 45 is impaired.

本発明は上記問題点に鑑み完成されたものであり、その目的は、差動伝送線と外部入出力電極とを接続する差動貫通導体を有する配線基板において、差動伝送線路部と差動貫通導体との接続における特性インピーダンス不整合から生じる高周波信号の反射損失を非常に小さなものに抑制することができ、その結果、半導体素子の作動性を良好なものとできる配線基板を提供することにある。   The present invention has been completed in view of the above problems, and an object of the present invention is to provide a differential transmission line portion and a differential differential in a wiring board having a differential through conductor connecting a differential transmission line and an external input / output electrode. To provide a wiring board capable of suppressing the reflection loss of a high-frequency signal caused by characteristic impedance mismatch in connection with a through conductor to a very small value, and as a result, improving the operability of a semiconductor element. is there.

本発明の配線基板は、絶縁基板に、互いに平行に形成された一対の貫通導体から成る差動貫通導体と、該差動貫通導体を同心円状に取り囲むように形成された複数の接地貫通導体と、該接地貫通導体に沿って前記差動貫通導体を同心円状に取り囲む開口部が形成された接地導体層とが設けられている。該接地導体層は、前記開口部の開口縁が前記複数の接地貫通導体の各々の中心を通るようにして形成されている。前記複数の接地貫通導体は、前記一対の信号貫通導体を一つの環状配置によって取り囲むように設けられている。 The wiring board of the present invention includes a differential through conductor composed of a pair of through conductors formed in parallel to each other on an insulating substrate, and a plurality of ground through conductors formed so as to surround the differential through conductor concentrically. And a ground conductor layer having an opening surrounding the differential through conductor concentrically along the ground through conductor . The ground conductor layer is formed so that the opening edge of the opening passes through the center of each of the plurality of ground through conductors. The plurality of ground through conductors are provided so as to surround the pair of signal through conductors by one annular arrangement.

本発明の配線基板は、上記構成において好ましくは、前記差動貫通導体と前記接地貫通導体との間隔は、前記差動貫通導体から成る伝送路の特性インピーダンスが前記差動貫通導体に接続される差動伝送線路の特性インピーダンスと同じとなるように設定されていることを特徴とするものである。   In the wiring board according to the present invention, preferably, the distance between the differential through conductor and the ground through conductor is such that a characteristic impedance of a transmission line composed of the differential through conductor is connected to the differential through conductor. The characteristic impedance is set to be the same as the characteristic impedance of the differential transmission line.

本発明の配線基板は、互いに平行に形成された一対の貫通導体から成る差動貫通導体と、差動貫通導体を同心円状上に取り囲むように形成された複数の接地貫通導体と、接地貫通導体に沿って差動貫通導体を同心円状に取り囲む開口部が形成された接地導体層とが設けられており、接地導体層は、開口部の開口縁が接地貫通導体の中心を通るようにして形成されていることから、接地導体層の開口部を介して差動貫通導体と接地導体層との間に発生する容量成分を減少させることができるとともに、接地導体層と接地貫通導体とが接していることから接地貫通導体がより安定した接地導体として作用する。これにより、特性インピーダンスの不連続性が抑えられるので、差動貫通導体と差動伝送線路部との接続における特性インピーダンスの不整合による高周波信号の反射損失を抑えることが可能となる。   The wiring board of the present invention includes a differential through conductor formed of a pair of through conductors formed in parallel to each other, a plurality of ground through conductors formed so as to surround the differential through conductor concentrically, and a ground through conductor And a ground conductor layer formed with an opening surrounding the differential through conductor concentrically. The ground conductor layer is formed so that the opening edge of the opening passes through the center of the ground through conductor. Therefore, the capacitance component generated between the differential through conductor and the ground conductor layer can be reduced through the opening of the ground conductor layer, and the ground conductor layer and the ground through conductor are in contact with each other. Therefore, the grounding through conductor acts as a more stable grounding conductor. Thereby, the discontinuity of the characteristic impedance can be suppressed, so that it is possible to suppress the reflection loss of the high frequency signal due to the mismatch of the characteristic impedance in the connection between the differential through conductor and the differential transmission line portion.

本発明の配線基板は、好ましくは、差動貫通導体と接地貫通導体との間隔は、差動貫通導体から成る伝送路の特性インピーダンスが差動貫通導体に接続される差動伝送線路の特性インピーダンスと同じとなるように設定されていることから、差動貫通導体に接続される差動伝送線路と差動貫通導体との間の特性インピーダンスの不整合をなくすことができ、高周波信号の反射損失を無視できる程度にきわめて小さく抑えることが可能となる。   In the wiring board of the present invention, preferably, the distance between the differential through conductor and the ground through conductor is such that the characteristic impedance of the differential transmission line connected to the differential through conductor is the characteristic impedance of the transmission line composed of the differential through conductor. Therefore, the characteristic impedance mismatch between the differential transmission line connected to the differential through conductor and the differential through conductor can be eliminated, and the reflection loss of the high frequency signal can be eliminated. Can be kept extremely small to such an extent that can be ignored.

これらのことにより、本発明の配線基板によれば、差動貫通導体自体および差動伝送線路と差動貫通導体との間の高周波信号の反射損失を極めて小さなものとすることができるので、本発明の配線基板に搭載される半導体素子の高周波領域における作動性を非常に良好なものとすることができる。   Accordingly, according to the wiring board of the present invention, the reflection loss of the high-frequency signal between the differential through conductor itself and the differential transmission line and the differential through conductor can be made extremely small. The operability in the high frequency region of the semiconductor element mounted on the wiring board of the invention can be made very good.

本発明の配線基板について以下に図面を参照しつつ詳細に説明する。図１は本発明の配線基板の実施の形態の一例を示す断面図であり、図２は図１の配線基板における差動貫通導体９の周辺部の要部拡大平面図である。   The wiring board of the present invention will be described in detail below with reference to the drawings. FIG. 1 is a cross-sectional view showing an example of an embodiment of a wiring board according to the present invention, and FIG. 2 is an enlarged plan view of an essential part of the periphery of a differential through conductor 9 in the wiring board of FIG.

本発明の配線基板１においては、絶縁基板２を構成する絶縁層２ａ〜２ｆは基本的には同じ比誘電率を有する絶縁材料で形成されている。絶縁層２ｃ上には信号配線群３が形成され、絶縁層２ｂ，２ｄ上には信号配線群３に対向させて広面積の接地導体層４ａ，４ｂが形成されており、信号配線群３の各信号配線はストリップ線路構造を有している。接地導体層４ａ，４ｂは、配線基板１の仕様に応じて入れ換えて配置されることもある。   In the wiring board 1 of the present invention, the insulating layers 2a to 2f constituting the insulating substrate 2 are basically formed of an insulating material having the same relative dielectric constant. A signal wiring group 3 is formed on the insulating layer 2c, and ground conductor layers 4a and 4b having large areas are formed on the insulating layers 2b and 2d so as to face the signal wiring group 3. Each signal wiring has a stripline structure. The ground conductor layers 4a and 4b may be interchanged depending on the specifications of the wiring board 1.

また、信号配線群３の各信号配線の配線幅および信号配線群３と接地導体層４ａ，４ｂとの間に介在する絶縁層２ｂ，２ｃの厚みを適宜設定することで、信号配線群３の特性インピーダンスを任意の値に設定することができるため、良好な伝送特性を有する信号配線群３を形成することが可能となる。信号配線群３の特性インピーダンスは一般的には５０Ωに設定される。   Further, by appropriately setting the wiring width of each signal wiring of the signal wiring group 3 and the thickness of the insulating layers 2b and 2c interposed between the signal wiring group 3 and the ground conductor layers 4a and 4b, Since the characteristic impedance can be set to an arbitrary value, the signal wiring group 3 having good transmission characteristics can be formed. The characteristic impedance of the signal wiring group 3 is generally set to 50Ω.

なお、信号配線群３に含まれる複数の信号配線は、それぞれ異なる電気信号を伝送するものとしてもよい。   The plurality of signal wirings included in the signal wiring group 3 may transmit different electrical signals.

図１の例では、配線基板１の上面には高速で動作するＩＣ，ＬＳＩ等の半導体集積回路素子や半導体レーザ（ＬＤ），フォトダイオード（ＰＤ）等の光半導体素子等の半導体素子５が搭載され、錫−鉛（Ｓｎ−Ｐｂ）合金等の半田や金（Ａｕ）等から成る導体バンプ６および半導体素子５を接続するための電極パッド７を介して差動伝送線路８に電気的に接続されている。また、配線基板１の下面には、半導体素子５に信号の入出力および電源供給を行なうための外部接続用電極１１が形成されている。   In the example of FIG. 1, a semiconductor integrated circuit element such as an IC or LSI that operates at high speed or a semiconductor element 5 such as an optical semiconductor element such as a semiconductor laser (LD) or photodiode (PD) is mounted on the upper surface of the wiring substrate 1. And electrically connected to the differential transmission line 8 through the electrode bumps 7 for connecting the conductor bumps 6 made of solder such as tin-lead (Sn—Pb) alloy, gold (Au), and the like and the semiconductor element 5. Has been. Further, on the lower surface of the wiring substrate 1, external connection electrodes 11 for inputting / outputting signals and supplying power to the semiconductor element 5 are formed.

また、差動伝送線路８は、絶縁層２ｃの上面に接地導体層４ａ，４ｂとの間に形成されたストリップ構造の一対の信号線路から成り、外部と信号の入出力を行なうために差動貫通導体９を介して外部接続用電極１１に電気的に接続され、また、差動貫通導体９、電極パッド７および錫−鉛（Ｓｎ−Ｐｂ）合金等の半田や金（Ａｕ）等から成る導体バンプ６を介して半導体素子５の電極に電気的に接続されている。   The differential transmission line 8 is composed of a pair of strip-shaped signal lines formed between the ground conductor layers 4a and 4b on the upper surface of the insulating layer 2c. It is electrically connected to the external connection electrode 11 through the through conductor 9, and is composed of the differential through conductor 9, the electrode pad 7, solder such as tin-lead (Sn—Pb) alloy, gold (Au), or the like. The conductor bump 6 is electrically connected to the electrode of the semiconductor element 5.

本発明の差動貫通導体９について、図２を用いて詳細に説明する。差動貫通導体９は互いに平行に形成された一対の信号貫通導体９ａ，９ｂから構成され、開口部１２によって接地導体４ｂと電気的に絶縁されており、差動貫通導体９の上端は差動伝送線路８に電気的に接続され、下端は外部接続用電極１１に電気的に接続されている。   The differential through conductor 9 of the present invention will be described in detail with reference to FIG. The differential through conductor 9 is composed of a pair of signal through conductors 9a and 9b formed in parallel to each other, and is electrically insulated from the ground conductor 4b by the opening 12, and the upper end of the differential through conductor 9 is differentially provided. The transmission line 8 is electrically connected, and the lower end is electrically connected to the external connection electrode 11.

また、開口部１２は、絶縁層２ｄ上の接地導体層４ｂと信号貫通導体９ａ，９ｂとを絶縁しているとともに、開口縁が接地貫通導体１０の中心を通るようにして形成されている。この構成により、接地導体層４ｂの開口部１２を介して差動貫通導体９と接地導体層４ｂとの間に発生する容量成分を減少させることができるとともに、接地導体層４ｂと接地貫通導体１０とが接していることから接地貫通導体１０がより安定した接地導体として作用する。これにより、特性インピーダンスの不連続性が抑えられるので、差動貫通導体９と差動伝送線路部８との接続における特性インピーダンスの不整合による高周波信号の反射損失を抑えることが可能となる。   The opening 12 is formed so that the ground conductor layer 4b on the insulating layer 2d and the signal through conductors 9a and 9b are insulated, and the opening edge passes through the center of the ground through conductor 10. With this configuration, the capacitance component generated between the differential through conductor 9 and the ground conductor layer 4b through the opening 12 of the ground conductor layer 4b can be reduced, and the ground conductor layer 4b and the ground through conductor 10 can be reduced. Are in contact with each other, the grounding through conductor 10 acts as a more stable grounding conductor. Thereby, since the discontinuity of the characteristic impedance is suppressed, it is possible to suppress the reflection loss of the high frequency signal due to the mismatch of the characteristic impedance in the connection between the differential through conductor 9 and the differential transmission line portion 8.

また、差動伝送線路８の特性インピーダンスと差動貫通導体９の特性インピーダンスとが同じになるように、差動貫通導体９および接地貫通導体１０の直径を調整したり、更にはこれらの相対位置を調整すればよい。   Further, the diameters of the differential through conductor 9 and the ground through conductor 10 are adjusted so that the characteristic impedance of the differential transmission line 8 and the characteristic impedance of the differential through conductor 9 are the same, and the relative positions thereof are also adjusted. Can be adjusted.

本発明において好ましくは、差動貫通導体９と接地貫通導体１０との間隔は、差動貫通導体９から成る伝送路の特性インピーダンスが差動貫通導体９に接続される差動伝送線路８の特性インピーダンスと同じとなるように設定されていることから、差動貫通導体９に接続される差動伝送線路８と差動貫通導体９との間の特性インピーダンスの不整合をなくすことができ、高周波信号の反射損失を無視できる程度にきわめて小さく抑えることが可能となる。   Preferably, in the present invention, the distance between the differential through conductor 9 and the ground through conductor 10 is such that the characteristic impedance of the transmission line composed of the differential through conductor 9 is the characteristic of the differential transmission line 8 connected to the differential through conductor 9. Since the impedance is set to be the same as that of the impedance, the characteristic impedance mismatch between the differential transmission line 8 connected to the differential through conductor 9 and the differential through conductor 9 can be eliminated, and the high frequency It becomes possible to keep the reflection loss of the signal so small that it can be ignored.

なお、差動貫通導体９から成る伝送路とは、たとえば差動貫通導体９と接地貫通導体１０と絶縁基板２とから構成される伝送路である。   The transmission path composed of the differential through conductor 9 is a transmission path composed of the differential through conductor 9, the ground through conductor 10, and the insulating substrate 2, for example.

本発明において好ましくは、差動貫通導体９と接地貫通導体１０との間隔は、差動貫通導体９から成る伝送路の特性インピーダンスが差動貫通導体９に接続される差動伝送線路８の特性インピーダンスと同じとなるように設定されているが、一般に、同軸構造の貫通胴体の特性インピーダンスは、絶縁層２ｂ，２ｃ、信号貫通導体９ａ，９ｂの径、信号貫通導体９ａ，９ｂと接地貫通導体１０との間の距離で決定されるが、信号貫通導体９ａ，９ｂの径のみの調整によって特性インピーダンスを整合する場合、信号貫通導体９ａ，９ｂの径の加工精度やデザインルールによって所望の特性インピーダンス値からずれた値となりやすい。したがって、差動貫通導体９と接地貫通導体１０との間隔を調整する方が、所望の特性インピーダンス値を得るのが容易である。   Preferably, in the present invention, the distance between the differential through conductor 9 and the ground through conductor 10 is such that the characteristic impedance of the transmission line composed of the differential through conductor 9 is the characteristic of the differential transmission line 8 connected to the differential through conductor 9. Although the impedance is set to be the same as the impedance, generally, the characteristic impedance of the through-body of the coaxial structure is that the insulating layers 2b and 2c, the diameters of the signal through conductors 9a and 9b, the signal through conductors 9a and 9b, However, when the characteristic impedance is matched only by adjusting the diameter of the signal through conductors 9a and 9b, the desired characteristic impedance is determined depending on the processing accuracy of the diameter of the signal through conductors 9a and 9b and the design rule. The value tends to deviate from the value. Therefore, it is easier to obtain a desired characteristic impedance value by adjusting the distance between the differential through conductor 9 and the ground through conductor 10.

次に、図３に基き本発明における差動伝送線路８について説明する。図３は本発明の配線基板１の実施の形態の一例における差動伝送線路８の周辺部を示す要部拡大断面図である。図３において、差動伝送線路８は互いに平行に形成された一対の信号伝送線路８ａ，８ｂから成る。そして、差動伝送線路８は、信号伝送線路８ａ，８ｂの配線幅，配線間隔，配線厚みおよび接地導体層４ａ，４ｂとの間に介在する絶縁層２ｂ，２ｃの厚みを適宜設定することにより、差動伝送線路８の特性インピーダンスを任意の値に設定することができる。その結果、良好な伝送特性を有する差動伝送線路８を形成することが可能となる。差動伝送線路８の特性インピーダンスは一般的には１００Ωに設定される。   Next, the differential transmission line 8 according to the present invention will be described with reference to FIG. FIG. 3 is an enlarged cross-sectional view showing a main part of the periphery of the differential transmission line 8 in the example of the embodiment of the wiring board 1 of the present invention. In FIG. 3, the differential transmission line 8 includes a pair of signal transmission lines 8a and 8b formed in parallel to each other. The differential transmission line 8 is configured by appropriately setting the wiring widths, wiring intervals, wiring thicknesses of the signal transmission lines 8a and 8b, and the thicknesses of the insulating layers 2b and 2c interposed between the ground conductor layers 4a and 4b. The characteristic impedance of the differential transmission line 8 can be set to an arbitrary value. As a result, the differential transmission line 8 having good transmission characteristics can be formed. The characteristic impedance of the differential transmission line 8 is generally set to 100Ω.

また、信号配線群３および差動伝送線路８の構造は、信号配線群３に対向して電源配線層もしくは接地導体層を形成して成るマイクロストリップ線路構造の他に、信号配線群３の上下に電源配線層もしくは接地導体層を形成して成るストリップ線路構造、また信号配線群３の各信号配線に隣接して所定間隔をもって電源配線層もしくは接地導体層を形成して成るコプレーナ線路構造であってもよく、配線基板１に要求される仕様等に応じて適宜選択して構成することができる。   Further, the signal wiring group 3 and the differential transmission line 8 have a structure in addition to the microstrip line structure in which a power supply wiring layer or a ground conductor layer is formed opposite to the signal wiring group 3, A strip line structure in which a power supply wiring layer or a ground conductor layer is formed on each other, and a coplanar line structure in which a power supply wiring layer or a ground conductor layer is formed at a predetermined interval adjacent to each signal wiring of the signal wiring group 3. Alternatively, it can be configured by appropriately selecting according to specifications required for the wiring board 1.

また、配線基板１にチップ抵抗，薄膜抵抗，コイルインダクタ，クロスインダクタ，チップコンデンサまたは電解コンデンサ等といったものを搭載して、電子回路モジュール等を構成してもよい。   Further, an electronic circuit module or the like may be configured by mounting a chip resistor, a thin film resistor, a coil inductor, a cross inductor, a chip capacitor, an electrolytic capacitor, or the like on the wiring board 1.

また、各絶縁層２ａ〜２ｆの平面視における形状は、正方形状や長方形状の他に、菱形状，六角形状または八角形状等の形状であってもよい。   Further, the shape of each of the insulating layers 2a to 2f in a plan view may be a rhombus shape, a hexagonal shape, an octagonal shape, or the like in addition to a square shape or a rectangular shape.

そして、このような本発明の配線基板１は、半導体素子収納用パッケージ等の電子部品収納用パッケージや電子部品搭載用基板、多数の半導体素子が搭載されるいわゆるマルチチップモジュールやマルチチップパッケージ、あるいはマザーボード等として使用される。   Such a wiring board 1 of the present invention includes an electronic component storage package such as a semiconductor element storage package, an electronic component mounting substrate, a so-called multichip module or multichip package on which a large number of semiconductor elements are mounted, or Used as a motherboard.

本発明の配線基板１において、絶縁層２ａ〜２ｆは例えばセラミックグリーンシート積層法によって形成される。この場合、絶縁層２ａ〜２ｆは、酸化アルミニウム質焼結体，窒化アルミニウム質焼結体，炭化珪素質焼結体，窒化珪素質焼結体，ムライト質焼結体またはガラスセラミックス等の無機絶縁材料を使用して形成される。また、絶縁層２ａ〜２ｆは、ポリイミド，エポキシ樹脂，フッ素樹脂，ポリノルボルネンまたはベンゾシクロブテン等の有機絶縁材料、あるいはセラミックス粉末等の無機絶縁物粉末をエポキシ樹脂等の熱硬化性樹脂で結合して成る複合絶縁材料等の電気絶縁材料を使用して形成される。   In the wiring board 1 of the present invention, the insulating layers 2a to 2f are formed by, for example, a ceramic green sheet lamination method. In this case, the insulating layers 2a to 2f are made of an inorganic insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, a silicon nitride sintered body, a mullite sintered body, or a glass ceramic. Formed using materials. The insulating layers 2a to 2f are formed by bonding an organic insulating material such as polyimide, epoxy resin, fluororesin, polynorbornene or benzocyclobutene, or inorganic insulating powder such as ceramic powder with a thermosetting resin such as epoxy resin. It is formed using an electrically insulating material such as a composite insulating material.

これらの絶縁層２ａ〜２ｆは以下のようにして作製される。例えば酸化アルミニウム質焼結体から成る場合であれば、まず、酸化アルミニウム，酸化珪素，酸化カルシウムまたは酸化マグネシウム等の原料粉末に適当な有機バインダや溶剤等を添加混合して泥漿状となし、これをドクターブレード法等を採用してシート状となすことによってセラミックグリーンシートを得る。そして、セラミックグリーンシートに信号配線群３および各導体層と成る金属ペーストを所定のパターンに印刷塗布して、これらを上下に積層し、最後にこの積層体を還元雰囲気中で約１６００℃の温度で焼成することによって製作される。   These insulating layers 2a to 2f are manufactured as follows. For example, in the case of an aluminum oxide sintered body, first, an appropriate organic binder or solvent is added to and mixed with raw material powder such as aluminum oxide, silicon oxide, calcium oxide or magnesium oxide to form a slurry. A ceramic green sheet is obtained by forming a sheet by employing a doctor blade method or the like. Then, the signal paste group 3 and the metal paste which becomes each conductor layer are printed and applied in a predetermined pattern on the ceramic green sheet, and these are laminated up and down, and finally the laminated body is heated to a temperature of about 1600 ° C. in a reducing atmosphere. It is manufactured by firing at

また、絶縁層２ａ〜２ｆがエポキシ樹脂から成る場合であれば、まず酸化アルミニウム質焼結体から成るセラミックスを混合した熱硬化性樹脂あるいはガラス繊維を織り込んだ布にエポキシ樹脂を含浸させて成るガラスエポキシ樹脂等から成る絶縁層の上面に、有機樹脂前駆体をスピンコート法もしくはカーテンコート法等により被着させ、これを熱硬化処理することによって絶縁層を形成する。この絶縁層と、銅層を無電解めっき法や蒸着法等の薄膜形成技術およびフォトリソグラフィ技術を採用することによって形成して成る薄膜配線導体層とを交互に積層し、約１７０℃程度の温度で加熱硬化することによって製作される。   If the insulating layers 2a to 2f are made of an epoxy resin, a glass made by first impregnating an epoxy resin into a cloth woven with a thermosetting resin or glass fiber mixed with ceramics made of an aluminum oxide sintered body. An organic resin precursor is deposited on the upper surface of an insulating layer made of an epoxy resin or the like by a spin coating method or a curtain coating method, and the insulating layer is formed by heat-curing the organic resin precursor. This insulating layer and a thin film wiring conductor layer formed by adopting a copper layer by employing a thin film forming technique such as an electroless plating method or a vapor deposition method and a photolithography technique are alternately laminated, and a temperature of about 170 ° C. It is manufactured by heating and curing.

これらの絶縁層２ａ〜２ｆの厚みは、使用する材料の特性に応じて、要求される仕様に対応する機械的強度や電気的特性等の条件を満たすように適宣設定される。   The thicknesses of these insulating layers 2a to 2f are appropriately set so as to satisfy the conditions such as mechanical strength and electrical characteristics corresponding to the required specifications according to the characteristics of the materials used.

また、信号配線群３、差動伝送線路８および接地導体層４は、例えばタングステン（Ｗ），モリブデン（Ｍｏ），モリブデン−マンガン（Ｍｏ−Ｍｎ），銅（Ｃｕ），銀（Ａｇ）または銀−パラジウム（Ａｇ−Ｐｄ）等の金属粉末メタライズ、あるいは銅（Ｃｕ），銀（Ａｇ），ニッケル（Ｎｉ），クロム（Ｃｒ），チタン（Ｔｉ），金（Ａｕ）またはニオブ（Ｎｂ）やそれらの合金等の金属材料の薄膜等により形成すればよい。   The signal wiring group 3, the differential transmission line 8, and the ground conductor layer 4 are made of, for example, tungsten (W), molybdenum (Mo), molybdenum-manganese (Mo-Mn), copper (Cu), silver (Ag), or silver. -Metal powder metallization such as palladium (Ag-Pd), or copper (Cu), silver (Ag), nickel (Ni), chromium (Cr), titanium (Ti), gold (Au) or niobium (Nb) or the like It may be formed of a thin film of a metal material such as an alloy of

具体的には、信号配線群３や電源配線層４をＷの金属粉末メタライズで形成する場合、Ｗ粉末に適当な有機バインダや溶剤等を添加混合して得た金属ペーストを絶縁層２ａ〜２ｆと成るセラミックグリーンシートに所定のパターンに印刷塗布し、これをセラミックグリーンシートの積層体とともに焼成することによって形成することができる。   Specifically, when the signal wiring group 3 and the power supply wiring layer 4 are formed by metal powder metallization of W, a metal paste obtained by adding and mixing an appropriate organic binder or solvent to the W powder is used for the insulating layers 2a to 2f. It can be formed by printing and applying a predetermined pattern on the ceramic green sheet to be fired together with a laminate of ceramic green sheets.

また、信号配線群３や電源配線層４を金属材料の薄膜で形成する場合、例えばスパッタリング法，真空蒸着法またはメッキ法により金属膜を形成した後、フォトリソグラフィ法により所定の配線パターンに形成することができる。   Further, when the signal wiring group 3 and the power supply wiring layer 4 are formed of a thin film of a metal material, a metal film is formed by, for example, a sputtering method, a vacuum evaporation method or a plating method, and then formed into a predetermined wiring pattern by a photolithography method. be able to.

このような配線基板１は、信号配線群３が配設されている絶縁層２ａ〜２ｆの比誘電率に応じて、信号配線群３および差動伝送線路８の各信号配線の配線幅，配線厚み，配線間隔を適宣設定することで、信号配線群３の各信号配線の特性インピーダンス値および差動伝送線路８の特性インピーダンス値を所望の値とすることができる。   Such a wiring board 1 includes the wiring width and wiring of each signal wiring of the signal wiring group 3 and the differential transmission line 8 according to the relative dielectric constant of the insulating layers 2a to 2f on which the signal wiring group 3 is disposed. By appropriately setting the thickness and the wiring interval, the characteristic impedance value of each signal wiring of the signal wiring group 3 and the characteristic impedance value of the differential transmission line 8 can be set to desired values.

なお、本発明は上記の実施の形態の例に限定されるものではなく、本発明の要旨を逸脱しない範囲で種々の変更を行なうことは何ら差し支えない。例えば、差動貫通導体が接続される差動伝送線路は配線基板の表層に形成されてもよい。さらに、差動貫通導体が電気的に接続される二次実装部は、コネクタやワイヤボンディングパッド等でもよい。また、差動貫通導体は、配線基板上の異なる絶縁層上に形成された差動伝送線路同士の接続に用いてもよい。   Note that the present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the scope of the present invention. For example, the differential transmission line to which the differential through conductor is connected may be formed on the surface layer of the wiring board. Further, the secondary mounting portion to which the differential through conductor is electrically connected may be a connector, a wire bonding pad, or the like. Moreover, you may use a differential penetration conductor for the connection of the differential transmission lines formed on the different insulating layer on a wiring board.

本発明の図１の配線基板１を以下のようにして作製した。酸化アルミニウム質焼結体から成る各厚みが０．２ｍｍの絶縁層２ａ〜２ｆを上述したセラミックグリーンシート積層法によって積層し形成することにより、絶縁基板２を作製した。このとき、信号配線群３、差動伝送線路８、接地導体層４、差動貫通導体９および接地貫通導体１０を、上述のＷの金属粉末メタライズで形成した。   The wiring board 1 of FIG. 1 of the present invention was produced as follows. The insulating substrate 2 was produced by laminating and forming the insulating layers 2a to 2f each made of an aluminum oxide sintered body having a thickness of 0.2 mm by the ceramic green sheet laminating method described above. At this time, the signal wiring group 3, the differential transmission line 8, the ground conductor layer 4, the differential through conductor 9, and the ground through conductor 10 were formed of the above-described W metal powder metallization.

そして、この場合、図２に示すように、比誘電率が５．２の絶縁基板２ｄに、各直径が７５μｍで互いの間隔が０．３１ｍｍの一対の信号貫通導体９ａ，９ｂから構成された差動貫通導体９を同心円状に取り囲むように、各直径が７５μｍで互いの間隔が０．３１ｍｍの１０本の接地貫通導体１０を形成した。差動貫通導体９と接地貫通導体１０との間の間隔は、３１０μｍとした。また、接地導体層４ｂと差動貫通導体９とを絶縁する開口部１２の開口縁が接地貫通導体１０の中心を通るようにして形成した。   In this case, as shown in FIG. 2, the insulating substrate 2d having a relative dielectric constant of 5.2 is composed of a pair of signal through conductors 9a and 9b each having a diameter of 75 μm and a spacing of 0.31 mm. Ten grounding through conductors 10 each having a diameter of 75 μm and a spacing of 0.31 mm were formed so as to surround the differential through conductors 9 concentrically. The distance between the differential through conductor 9 and the ground through conductor 10 was 310 μm. Further, the opening edge of the opening 12 that insulates the ground conductor layer 4 b and the differential through conductor 9 passes through the center of the ground through conductor 10.

上記構成の差動貫通導体９について、４０ＧＨｚの高周波信号を信号貫通導体９ａ，９ｂに位相差１８０度で入力したところ、差動貫通導体９における特性インピーダンスが
１０１．７Ω、差動伝送線路８における特性インピーダンスが１００Ωとなり、特性インピーダンスの不整合による高周波信号の反射損失を抑えることが可能となった。すなわち、差動貫通導体９と差動伝送線路８との接続部における高周波信号の反射レベルは−４１ｄＢ程度となり、きわめて小さい値であった。 With respect to the differential through conductor 9 having the above-described configuration, when a 40 GHz high frequency signal is input to the signal through conductors 9 a and 9 b with a phase difference of 180 degrees, the characteristic impedance of the differential through conductor 9 is 101.7Ω, and the differential transmission line 8 The characteristic impedance is 100Ω, and the reflection loss of the high frequency signal due to the mismatch of the characteristic impedance can be suppressed. That is, the reflection level of the high-frequency signal at the connection portion between the differential through conductor 9 and the differential transmission line 8 is about −41 dB, which is a very small value.

また、比較例１として、開口部１２の開口縁が接地貫通導体１０の中心よりも１１０μｍ内側を通るように形成した配線基板においては、差動貫通導体９と差動伝送線路８との接続部における高周波信号の反射レベルは−２５ｄＢ程度と大きくなった。   In Comparative Example 1, in the wiring board formed so that the opening edge of the opening 12 passes 110 μm inside from the center of the grounding through conductor 10, the connecting portion between the differential through conductor 9 and the differential transmission line 8. The reflection level of the high-frequency signal at 1 is as high as -25 dB.

比較例２として、開口部１２の開口縁が接地貫通導体１０の中心よりも１１０μｍ外側を通るように形成した配線基板においては、差動貫通導体９と差動伝送線路８との接続部における高周波信号の反射レベルは−２８ｄＢ程度と大きくなった。   As a comparative example 2, in the wiring board formed so that the opening edge of the opening 12 passes 110 μm outside the center of the grounding through conductor 10, the high frequency at the connection portion between the differential through conductor 9 and the differential transmission line 8 is used. The signal reflection level increased to about -28 dB.

本発明の配線基板の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the wiring board of this invention. 本発明の配線基板の実施の形態の一例を示す要部拡大平面図である。It is a principal part enlarged plan view which shows an example of embodiment of the wiring board of this invention. 本発明の配線基板の実施の形態の一例を示す部分拡大断面図である。It is a partial expanded sectional view which shows an example of embodiment of the wiring board of this invention. 従来の配線基板の一例を示す断面図である。It is sectional drawing which shows an example of the conventional wiring board. 従来の配線基板の一例を示す要部拡大平面図である。It is a principal part enlarged plan view which shows an example of the conventional wiring board.

符号の説明Explanation of symbols

１・・・配線基板
２・・・絶縁基板
２ａ〜２ｆ・・・絶縁層
３・・・信号配線群
４・・・接地導体層
５・・・半導体素子
６・・・導体バンプ
７・・・電極パッド
８・・・差動伝送線路
９・・・差動貫通導体
９ａ、９ｂ・・・信号貫通導体
１０・・・接地貫通導体
１１・・・外部接続用電極
１２・・・開口部 DESCRIPTION OF SYMBOLS 1 ... Wiring board 2 ... Insulating board 2a-2f ... Insulating layer 3 ... Signal wiring group 4 ... Grounding conductor layer 5 ... Semiconductor element 6 ... Conductor bump 7 ... Electrode pad 8 ... Differential transmission line 9 ... Differential through conductors 9a, 9b ... Signal through conductor 10 ... Ground through conductor 11 ... External connection electrode 12 ... Opening

Claims (2)

絶縁基板に、互いに平行に形成された一対の信号貫通導体から成る差動貫通導体と、該差動貫通導体を同心円状に取り囲むように形成された複数の接地貫通導体と、該接地貫通導体に沿って前記差動貫通導体を同心円状に取り囲む開口部が形成された接地導体層とが設けられており、
該接地導体層は、前記開口部の開口縁が前記複数の接地貫通導体の各々の中心を通るようにして形成されており、
前記複数の接地貫通導体は、前記一対の信号貫通導体を一つの環状配置によって取り囲むように設けられていることを特徴とする配線基板。 A differential through conductor composed of a pair of signal through conductors formed in parallel to each other on an insulating substrate, a plurality of ground through conductors formed so as to concentrically surround the differential through conductor, and the ground through conductor And a grounding conductor layer in which an opening surrounding the differential through conductor concentrically is provided,
The ground conductor layer is formed such that an opening edge of the opening passes through the center of each of the plurality of ground through conductors .
The plurality of grounding through conductors are provided so as to surround the pair of signal through conductors by one annular arrangement . 前記差動貫通導体と前記接地貫通導体との間隔は、前記差動貫通導体から成る伝送路の特性インピーダンスが前記差動貫通導体に接続される差動伝送線路の特性インピーダンスと同じとなるように設定されていることを特徴とする請求項１記載の配線基板。 The distance between the differential through conductor and the ground through conductor is such that the characteristic impedance of the transmission line composed of the differential through conductor is the same as the characteristic impedance of the differential transmission line connected to the differential through conductor. The wiring board according to claim 1, wherein the wiring board is set.
JP2003336309A 2003-09-26 2003-09-26 Wiring board Expired - Fee Related JP4373752B2 (en)

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JP2006307063A (en) * 2005-04-28 2006-11-09 Idemitsu Kosan Co Ltd Epoxy resin composition and optoelectronic member using the same
JP4921817B2 (en) * 2006-03-22 2012-04-25 アイカ工業株式会社 Multilayer printed wiring board
JP5034095B2 (en) * 2007-07-13 2012-09-26 株式会社リコー Printed wiring board and electronic device
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JPS6022647Y2 (en) * 1980-06-16 1985-07-05 三菱電機株式会社 Multilayer transmission line structure
JPS6032805U (en) * 1983-08-10 1985-03-06 三菱電機株式会社 Coaxial/stripline converter
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