JP5444699B2 - 異方性導電性接着剤のための導電性粒子、異方性導電性接着剤、異方性導電性接着剤のための導電性粒子の製造方法、半導体装置 - Google Patents
異方性導電性接着剤のための導電性粒子、異方性導電性接着剤、異方性導電性接着剤のための導電性粒子の製造方法、半導体装置 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
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Description
前記導電層は前記心材の表面において、凹凸部を構成する所定高さの網目状構造を形成し、前記網目状構造の凹部では前記心材の表面が露出している。
を含む。
端子面に接続端子を有する半導体チップと、を含み、前記半導体チップは前記配線基板上に、前記端子面が前記配線基板の表面に対向する向きで、前記接続端子を前記配線パターンに電気接続して実装されており、前記接続面と前記配線基板との間には、樹脂中に導電性粒子を分散した異方性導電性接着剤が介在しており、前記接続端子と前記配線パターンの間には、前記導電性粒子が挟持されており、前記導電性粒子は、導電性の心材と、前記心材を覆う導電層と、を有し、前記導電層は前記心材の表面において、凹凸部を形成する所定高さの網目状構造を形成し、前記網目状構造の凹部では前記心材の表面が露出している。
図1A,図1Bは、第1の実施形態による異方性導電性接着剤を使ったフリップチップ法による半導体装置の製造方法を示す。
前記実施例1のプロセスにより、図5に示す、前記コア材13C状に直接に互いに孤立したNiよりなる突起パターン13Pを有する形成導電性粒子を用いて、前記図1A〜1Cと同様のフリップチップ実装プロセスを行い、比較例1となる半導体装置を作製し、実施例と同様にして、導通を測定した。その結果、この比較例1では、接続抵抗値が実施例1の5倍に増加しているのが確認されたが、これは、導電性粒子の孤立した突起パターン13Pが、前記Al電極の酸化膜あるいは前記導電性粒子と電極間に挟まる樹脂を突き破ることができない箇所が実施例1の場合に比べてより多数あることを示唆している。さらに、−25℃〜+125℃の温度サイクル試験を同様にして行ったところ、接続抵抗変化率が+10%であり、接続抵抗が温度サイクルの繰り返しにより、より大きな割合で増加することが示された。
前記実施例2のプロセスにより、図5に示す、前記コア材13C状に直接に互いに孤立したCuよりなる突起パターン13Pを有する形成導電性粒子を用いて、前記図1A〜1Cと同様のフリップチップ実装プロセスを行い、比較例2となる半導体装置を作製し、実施例と同様にして、導通を測定した。その結果、この比較例2では、接続抵抗値が実施例1の10倍に増加しているのが確認されたが、これは、導電性粒子の孤立した突起パターン13Pが、前記Al電極の酸化膜あるいは前記導電性粒子と電極間に挟まる樹脂を突き破ることができない箇所が多数あることを示唆している。さらに、−25℃〜+125℃の温度サイクル試験を同様にして行ったところ、接続抵抗変化率が+20%であり、接続抵抗が温度サイクルの繰り返しにより、より大きな割合で増加することが示された。
11A〜11C 配線パターン
12 半導体チップ
13 樹脂層
13A 導電性粒子
13B 導電層
13C 心材
13P 突起
13b 凹部
13m 未硬化接着剤樹脂層
14 シランカップリング材
14A 無機あるいは有機微粒子
14B 官能基
Claims (8)
- 導電性の心材と、
前記心材を覆う導電層と、を有し、
前記導電層は前記心材の表面において、凹凸部を構成する所定高さの網目状構造を形成し、
前記網目状構造の凹部では前記心材の表面が露出していることを特徴とする異方性導電性接着剤のための導電性粒子。 - 前記心材は1μm以上、100μm以下の径を有することを特徴とする請求項1記載の異方性導電性接着剤のための導電性粒子。
- 前記凹凸部は、前記心材の径よりも小さく、0.01μm以上、10μm以下の径を有することを特徴とする請求項1または2記載の異方性導電性接着剤のための導電性粒子。
- 樹脂と、前記樹脂中に分散されている導電性粒子とよりなり、前記導電性粒子は、
導電性の心材と、
前記心材を覆う導電層と、を有し、
前記導電層は前記心材の表面において、凹凸部を構成する所定高さの網目状構造を形成し、
前記網目状構造の凹部では前記心材の表面が露出していることを特徴とする異方性導電性接着剤。 - 導電性の心材の表面に無機粒子あるいは有機粒子を付着する工程と、
前記無機粒子あるいは有機粒子をマスクに、前記心材の表面に導電材料を被着し、前記心材の表面に導電層を形成する工程と、前記無機粒子あるいは有機粒子を除去し、前記導電層により、前記心材の表面に凹凸部を構成する所定高さの網目状構造を、前記網目状構造の凹部では前記心材の表面が露出しているように形成する工程と、
を含むことを特徴とする異方性導電性接着剤のための導電性粒子の製造方法。 - 前記無機粒子あるいは有機粒子は、チオール基、フェニル基、アミン基およびアミノ基よりなる群から選ばれる官能基を少なくとも一つ含む化合物を末端に有する分子を介して、前記心材の表面に付着されることを特徴とする請求項5記載の異方性導電性接着剤のための導電性粒子の製造方法。
- 前記導電性の心材の表面に前記無機粒子あるいは有機粒子を付着する工程は、前記無機粒子あるいは有機粒子の表面に前記分子を付与する工程と、前記分子を付与された前記無機粒子あるいは有機粒子と前記心材とを溶媒中で分散させ、前記心材と前記分子中の前記官能基とを反応させ、前記心材の表面に前記無機粒子あるいは有機粒子を付着させる工程を含むことを特徴とする請求項6記載の異方性導電性接着剤のための導電性粒子の製造方法。
- 表面に配線パターンを担持した配線基板と、
端子面に接続端子を有する半導体チップと、
を含み、
前記半導体チップは前記配線基板上に、前記端子面が前記配線基板の表面に対向する向きで、前記接続端子を前記配線パターンに電気接続して実装されており、
前記接続面と前記配線基板との間には、樹脂中に導電性粒子を分散した異方性導電性接着剤が介在しており、
前記接続端子と前記配線パターンの間には、前記導電性粒子が挟持されており、
前記導電性粒子は、導電性の心材と、前記心材を覆う導電層と、を有し、前記導電層は前記心材の表面において、凹凸部を形成する所定高さの網目状構造を形成し、
前記網目状構造の凹部では前記心材の表面が露出していることを特徴とする半導体装置。
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