JP5431379B2 - ダイオード保護回路、lnb、およびアンテナシステム - Google Patents

ダイオード保護回路、lnb、およびアンテナシステム Download PDF

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Publication number
JP5431379B2
JP5431379B2 JP2011022025A JP2011022025A JP5431379B2 JP 5431379 B2 JP5431379 B2 JP 5431379B2 JP 2011022025 A JP2011022025 A JP 2011022025A JP 2011022025 A JP2011022025 A JP 2011022025A JP 5431379 B2 JP5431379 B2 JP 5431379B2
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Japan
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voltage
resistor
cnt
circuit
diode
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JP2012164715A (ja
Inventor
正之 仁部
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Sharp Corp
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Sharp Corp
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Priority to JP2011022025A priority Critical patent/JP5431379B2/ja
Priority to CN2011103830250A priority patent/CN102629756A/zh
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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2011022025A 2011-02-03 2011-02-03 ダイオード保護回路、lnb、およびアンテナシステム Expired - Fee Related JP5431379B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011022025A JP5431379B2 (ja) 2011-02-03 2011-02-03 ダイオード保護回路、lnb、およびアンテナシステム
CN2011103830250A CN102629756A (zh) 2011-02-03 2011-11-16 二极管保护电路、lnb以及天线系统

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JP2011022025A JP5431379B2 (ja) 2011-02-03 2011-02-03 ダイオード保護回路、lnb、およびアンテナシステム

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JP2012164715A JP2012164715A (ja) 2012-08-30
JP5431379B2 true JP5431379B2 (ja) 2014-03-05

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JP2011022025A Expired - Fee Related JP5431379B2 (ja) 2011-02-03 2011-02-03 ダイオード保護回路、lnb、およびアンテナシステム

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JP (1) JP5431379B2 (zh)
CN (1) CN102629756A (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107493084B (zh) * 2017-09-01 2021-06-29 无锡泽太微电子有限公司 一种射频芯片高功率放大器的防静电保护电路
CN107968089A (zh) * 2017-12-20 2018-04-27 广东美的制冷设备有限公司 静电防护电路、集成电路芯片及家用电器
TWI723470B (zh) * 2018-07-31 2021-04-01 台灣積體電路製造股份有限公司 驅動電路、積體電路、及操作驅動電路的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2055795T3 (es) * 1988-11-22 1994-09-01 At & T Corp Separador de salida de circuito integrado que tiene proteccion de esd mejorada.
JPH03173446A (ja) * 1989-12-01 1991-07-26 Matsushita Electron Corp 半導体装置
JPH06252349A (ja) * 1993-02-23 1994-09-09 Seiko Epson Corp 半導体装置及び半導体装置の製造方法
US5602404A (en) * 1995-01-18 1997-02-11 National Semiconductor Corporation Low voltage triggering silicon controlled rectifier structures for ESD protection
JP3926975B2 (ja) * 1999-09-22 2007-06-06 株式会社東芝 スタック型mosトランジスタ保護回路
JP2003133915A (ja) * 2001-10-26 2003-05-09 Fuji Electric Co Ltd 半導体集積回路
JP3772727B2 (ja) * 2001-10-26 2006-05-10 富士電機デバイステクノロジー株式会社 半導体集積回路装置
CN1979860A (zh) * 2005-12-08 2007-06-13 松下电器产业株式会社 半导体器件及其制造方法
TW200729697A (en) * 2005-12-26 2007-08-01 Toshiba Kk Power amplifier
US20080197910A1 (en) * 2007-02-16 2008-08-21 Denso Corporation Input processing circuit and switch input circuit using the same
JP2010268296A (ja) * 2009-05-15 2010-11-25 Sharp Corp 衛星放送受信用コンバータic、衛星放送受信用コンバータ、および衛星放送受信用アンテナ

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JP2012164715A (ja) 2012-08-30
CN102629756A (zh) 2012-08-08

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