JP5431335B2 - アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法 - Google Patents
アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法 Download PDFInfo
- Publication number
- JP5431335B2 JP5431335B2 JP2010526626A JP2010526626A JP5431335B2 JP 5431335 B2 JP5431335 B2 JP 5431335B2 JP 2010526626 A JP2010526626 A JP 2010526626A JP 2010526626 A JP2010526626 A JP 2010526626A JP 5431335 B2 JP5431335 B2 JP 5431335B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- liquid crystal
- capacitor
- active matrix
- pixel electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 180
- 239000000758 substrate Substances 0.000 title claims description 147
- 239000011159 matrix material Substances 0.000 title claims description 90
- 238000004519 manufacturing process Methods 0.000 title description 17
- 239000003990 capacitor Substances 0.000 claims description 305
- 239000010408 film Substances 0.000 claims description 145
- 238000003860 storage Methods 0.000 claims description 115
- 239000011229 interlayer Substances 0.000 claims description 67
- 239000010410 layer Substances 0.000 claims description 65
- 230000008878 coupling Effects 0.000 claims description 25
- 238000010168 coupling process Methods 0.000 claims description 25
- 238000005859 coupling reaction Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 15
- 230000006870 function Effects 0.000 claims description 6
- 238000007667 floating Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 description 38
- 230000008569 process Effects 0.000 description 19
- 230000000694 effects Effects 0.000 description 12
- 230000001105 regulatory effect Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 238000012937 correction Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- 238000007689 inspection Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 235000010384 tocopherol Nutrition 0.000 description 4
- 235000019731 tricalcium phosphate Nutrition 0.000 description 4
- 238000009966 trimming Methods 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 235000019557 luminance Nutrition 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000009191 jumping Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 230000002087 whitening effect Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
- G02F1/134354—Subdivided pixels, e.g. for grey scale or redundancy the sub-pixels being capacitively coupled
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
12 トランジスタ
15 データ信号線
16 走査信号線
17a〜17c 第1〜第3画素電極
18 保持容量配線
21 有機ゲート絶縁膜
22 無機ゲート絶縁膜
25 無機層間絶縁膜
26 有機層間絶縁膜
38 第1連結配線
39 第2連結配線
58 第3連結配線
59 第4連結配線
67x〜67z 第1〜第3容量電極
84 液晶表示ユニット
701 テレビジョン受像機
800 液晶表示装置
Claims (23)
- 走査信号線の延伸方向を行方向とした場合に、列方向に延伸するデータ信号線と、走査信号線およびデータ信号線に接続されたトランジスタと、保持容量配線とを備えたアクティブマトリクス基板であって、
1つの画素領域に、第1および第2画素電極と、データ信号線と同層に形成された第1および第2容量電極と、該第1容量電極に接続された第1連結配線と、該第2容量電極に接続された第2連結配線とが設けられ、
該第1および第2容量電極は、第1絶縁膜を介して保持容量配線と重なるように行方向に並べられるとともに、それぞれが第2絶縁膜を介して第2画素電極と重なり、
上記トランジスタの一方の導通電極と第1画素電極と第1連結配線と第2連結配線とが電気的に接続され、
上記第2画素電極が電気的にフローティングとされ、
上記第1画素電極と上記第2画素電極とが、上記第1および第2容量電極と上記第2画素電極との重なり部分に形成される結合容量を介して接続されており、
第1連結配線の少なくとも一部と第2連結配線の少なくとも一部とが、保持容量配線に重なっておらず、
上記画素領域に、第2画素電極に電気的に接続された第3容量電極が、保持容量配線と重なるように設けられ、
上記第1〜第3容量電極がこの順に行方向に並べられていることを特徴とするアクティブマトリクス基板。 - 上記トランジスタの一方の導通電極から引き出された引き出し配線を備え、
該引き出し配線と第1画素電極とがコンタクトホールを介して接続され、該引き出し配線が同層にて第1および第2連結配線に繋がるとともに、上記第3容量電極と第2画素電極とがコンタクトホールを介して接続されていることを特徴とする請求項1記載のアクティブマトリクス基板。 - 上記第1および第2連結配線の少なくとも一方が、第1および第2画素電極の間隙に重なっていることを特徴とする請求項1または2に記載のアクティブマトリクス基板。
- 第2絶縁膜はトランジスタのチャネルを覆う層間絶縁膜であることを特徴とする請求項1〜3のいずれか1項に記載のアクティブマトリクス基板。
- 上記層間絶縁膜は、第1容量電極および第2画素電極と重なる部分の少なくとも一部と、
第2容量電極および第2画素電極と重なる部分の少なくとも一部とが薄くなっていることを特徴とする請求項4記載のアクティブマトリクス基板。 - 上記層間絶縁膜は無機層間絶縁膜と有機層間絶縁膜とを含み、
第1容量電極および第2画素電極と重なる部分の少なくとも一部と、第2容量電極および第2画素電極と重なる部分の少なくとも一部とでは、有機層間絶縁膜が薄くなっているか、あるいは有機層間絶縁膜が除去されていることを特徴とする請求項5記載のアクティブマトリクス基板。 - 第1絶縁膜はゲート絶縁膜であることを特徴とする請求項1記載のアクティブマトリクス基板。
- 上記ゲート絶縁膜は、保持容量配線および第1容量電極と重なる部分の少なくとも一部と、保持容量配線および第2容量電極と重なる部分の少なくとも一部と、保持容量配線および第3容量電極と重なる部分の少なくとも一部とが薄くなっていることを特徴とする請求項7記載のアクティブマトリクス基板。
- 上記ゲート絶縁膜は有機ゲート絶縁膜と無機ゲート絶縁膜とを含み、
保持容量配線および第1容量電極と重なる部分の少なくとも一部と、保持容量配線および第2容量電極と重なる部分の少なくとも一部と、保持容量配線および第3容量電極と重なる部分の少なくとも一部とでは、有機ゲート絶縁膜が薄くなっているか、あるいは有機ゲート絶縁膜が除去されていることを特徴とする請求項8記載のアクティブマトリクス基板。 - 第1画素電極と走査信号線とが一部重なっていることを特徴とする請求項5または8記載のアクティブマトリクス基板。
- 保持容量延伸部を備え、
該保持容量延伸部は、平面的に視ると、保持容量配線からデータ信号線に沿って延伸し、第2画素電極のエッジと重なるか、あるいは該エッジの外側を通っていることを特徴とする請求項1〜10のいずれか1項に記載のアクティブマトリクス基板。 - 上記第1および第2画素電極の間隙が配向規制用構造物として機能することを特徴とする請求項1〜11のいずれか1項に記載のアクティブマトリクス基板。
- 上記画素領域に第3画素電極を備え、該第3画素電極と第1画素電極とが電気的に接続されていることを特徴とする請求項1〜12のいずれか1項に記載のアクティブマトリクス基板。
- 第1〜第3画素電極がこの順に列方向に並べられていることを特徴とする請求項13に記載のアクティブマトリクス基板。
- 請求項5に記載のアクティブマトリクス基板とこれに対向する対向基板を備え、
上記対向基板の表面は、アクティブマトリクス基板の層間絶縁膜が薄くなっている領域に対応する部分が隆起していることを特徴とする液晶パネル。 - 請求項8に記載のアクティブマトリクス基板とこれに対向する対向基板を備え、
上記対向基板の表面は、アクティブマトリクス基板のゲート絶縁膜が薄くなっている領域に対応する部分が隆起していることを特徴とする液晶パネル。 - 上記保持容量配線は行方向に延伸し、
対向基板表面の隆起している部分を保持容量配線の形成層に投射した場合に、保持容量配線の行方向に沿う2つのエッジ間に収まることを特徴とする請求項15または16記載の液晶パネル。 - 対向基板は配向規制用のリブを備え、
対向基板の上記領域に対応する部分に、上記リブと同材料で形成された突起部材が設けられていることを特徴とする請求項15または16記載の液晶パネル。 - 対向基板はカラーフィルタ基板であり、
対向基板の上記領域に対応する部分に、着色層と同材料で形成された突起部材が設けられていることを特徴とする請求項15または16記載の液晶パネル。 - 請求項1〜14のいずれか1項に記載のアクティブマトリクス基板を備えた液晶パネル。
- 請求項15〜20のいずれか1項に記載の液晶パネルとドライバとを備えることを特徴とする液晶表示ユニット。
- 請求項21記載の液晶表示ユニットと光源装置とを備えることを特徴とする液晶表示装置。
- 請求項22記載の液晶表示装置と、テレビジョン放送を受信するチューナー部とを備えることを特徴とするテレビジョン受像機。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010526626A JP5431335B2 (ja) | 2008-08-27 | 2009-07-15 | アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法 |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008218840 | 2008-08-27 | ||
JP2008218840 | 2008-08-27 | ||
JP2008301293 | 2008-11-26 | ||
JP2008301293 | 2008-11-26 | ||
JP2010526626A JP5431335B2 (ja) | 2008-08-27 | 2009-07-15 | アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法 |
PCT/JP2009/062824 WO2010024058A1 (ja) | 2008-08-27 | 2009-07-15 | アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2010024058A1 JPWO2010024058A1 (ja) | 2012-01-26 |
JP5431335B2 true JP5431335B2 (ja) | 2014-03-05 |
Family
ID=41721232
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010526626A Expired - Fee Related JP5431335B2 (ja) | 2008-08-27 | 2009-07-15 | アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8411216B2 (ja) |
EP (1) | EP2328014A4 (ja) |
JP (1) | JP5431335B2 (ja) |
KR (1) | KR101247936B1 (ja) |
CN (1) | CN102132204B (ja) |
BR (1) | BRPI0917349A2 (ja) |
RU (1) | RU2469367C1 (ja) |
WO (1) | WO2010024058A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102132203B (zh) * | 2008-08-27 | 2014-05-07 | 夏普株式会社 | 有源矩阵基板、液晶面板、液晶显示单元、液晶显示装置、电视接收机、有源矩阵基板的制造方法 |
KR101247936B1 (ko) * | 2008-08-27 | 2013-03-26 | 샤프 가부시키가이샤 | 액티브 매트릭스 기판, 액정 패널, 액정 표시 유닛, 액정 표시 장치, 텔레비전 수상기, 액티브 매트릭스 기판의 제조 방법 |
US9224759B2 (en) | 2010-12-20 | 2015-12-29 | Japan Display Inc. | Pixel array substrate structure, method of manufacturing pixel array substrate structure, display device, and electronic apparatus |
US8830436B2 (en) * | 2010-12-24 | 2014-09-09 | Japan Display West Inc. | Pixel structure, display device, and electronic apparatus |
CN102959605B (zh) * | 2011-06-27 | 2015-11-25 | 株式会社日本有机雷特显示器 | 显示装置及其制造方法 |
KR101303476B1 (ko) * | 2012-03-08 | 2013-09-05 | 엘지디스플레이 주식회사 | 액정표시장치 어레이 기판 및 그 제조방법 |
JP2013186294A (ja) * | 2012-03-08 | 2013-09-19 | Japan Display West Co Ltd | 表示装置及び電子機器 |
TWI486928B (zh) * | 2012-11-16 | 2015-06-01 | Au Optronics Corp | 顯示面板及其檢測方法 |
JP6093575B2 (ja) | 2013-01-15 | 2017-03-08 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
CN103969853B (zh) * | 2013-02-05 | 2016-06-01 | 北京京东方光电科技有限公司 | 阵列基板及其检测方法和检测装置 |
CN107808892B (zh) * | 2016-09-08 | 2020-06-26 | 群创光电股份有限公司 | 显示设备 |
US10847739B2 (en) | 2017-09-21 | 2020-11-24 | Sharp Kabushiki Kaisha | Display device having larger openings on inner sides of anode electrodes in display region than on inner sides of anode electrodes in peripheral display region |
JP2019184945A (ja) * | 2018-04-16 | 2019-10-24 | シャープ株式会社 | 配線基板及び表示装置 |
JP7396789B2 (ja) * | 2018-08-10 | 2023-12-12 | 日東電工株式会社 | 配線回路基板、その製造方法および配線回路基板集合体シート |
CN109272912B (zh) * | 2018-11-30 | 2020-05-19 | 惠科股份有限公司 | 错充检测方法及错充检测系统 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH117046A (ja) * | 1997-06-16 | 1999-01-12 | Sharp Corp | 液晶表示装置 |
JP2005242307A (ja) * | 2004-01-28 | 2005-09-08 | Sharp Corp | アクティブマトリクス基板及び表示装置 |
JP2005316489A (ja) * | 2004-04-29 | 2005-11-10 | Chi Mei Optoelectronics Corp | 表示装置とそれに生じる欠陥の修復方法 |
JP2006039290A (ja) * | 2004-07-28 | 2006-02-09 | Fujitsu Display Technologies Corp | 液晶表示装置及びその焼き付き防止方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100333273B1 (ko) * | 1999-08-02 | 2002-04-24 | 구본준, 론 위라하디락사 | 박막트랜지스터형 액정표시장치의 어레이기판과 그 제조방법 |
KR100348995B1 (ko) * | 1999-09-08 | 2002-08-17 | 엘지.필립스 엘시디 주식회사 | 4 마스크를 이용한 액정표시소자의 제조방법 및 그에 따른 액정표시소자 |
JP3645184B2 (ja) * | 2000-05-31 | 2005-05-11 | シャープ株式会社 | 液晶表示装置及びその欠陥修正方法 |
US20040160544A1 (en) | 2003-02-14 | 2004-08-19 | Yuan-Tung Dai | Multilayer storage capacitors for a liquid crystal display panel and the method for fabricating the same |
US7812893B2 (en) * | 2004-11-17 | 2010-10-12 | Sharp Kabushiki Kaisha | Active matrix substrate where a portion of the storage capacitor wiring or the scanning signal line overlaps with the drain lead-out wiring connected to the drain electrode of a thin film transistor and display device having such an active matrix substrate |
KR20070122317A (ko) * | 2006-06-26 | 2007-12-31 | 삼성전자주식회사 | 액정 모듈, 액정 모듈의 구동 방법 및 액정표시장치 |
JP2008112136A (ja) | 2006-10-04 | 2008-05-15 | Mitsubishi Electric Corp | 表示装置及びその製造方法 |
KR101299646B1 (ko) * | 2006-10-12 | 2013-08-26 | 삼성디스플레이 주식회사 | 표시패널 및 이의 제조방법 |
US7920219B2 (en) * | 2006-10-30 | 2011-04-05 | Samsung Electronics Co., Ltd. | Liquid crystal display device and method of manufacturing the same |
JP4285533B2 (ja) * | 2006-12-04 | 2009-06-24 | エプソンイメージングデバイス株式会社 | 液晶表示装置及びその製造方法 |
KR101247936B1 (ko) * | 2008-08-27 | 2013-03-26 | 샤프 가부시키가이샤 | 액티브 매트릭스 기판, 액정 패널, 액정 표시 유닛, 액정 표시 장치, 텔레비전 수상기, 액티브 매트릭스 기판의 제조 방법 |
-
2009
- 2009-07-15 KR KR1020117006702A patent/KR101247936B1/ko not_active IP Right Cessation
- 2009-07-15 WO PCT/JP2009/062824 patent/WO2010024058A1/ja active Application Filing
- 2009-07-15 BR BRPI0917349A patent/BRPI0917349A2/pt not_active IP Right Cessation
- 2009-07-15 CN CN2009801330241A patent/CN102132204B/zh not_active Expired - Fee Related
- 2009-07-15 EP EP09809713A patent/EP2328014A4/en not_active Withdrawn
- 2009-07-15 JP JP2010526626A patent/JP5431335B2/ja not_active Expired - Fee Related
- 2009-07-15 RU RU2011111264/28A patent/RU2469367C1/ru not_active IP Right Cessation
- 2009-07-15 US US13/060,494 patent/US8411216B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH117046A (ja) * | 1997-06-16 | 1999-01-12 | Sharp Corp | 液晶表示装置 |
JP2005242307A (ja) * | 2004-01-28 | 2005-09-08 | Sharp Corp | アクティブマトリクス基板及び表示装置 |
JP2005316489A (ja) * | 2004-04-29 | 2005-11-10 | Chi Mei Optoelectronics Corp | 表示装置とそれに生じる欠陥の修復方法 |
JP2006039290A (ja) * | 2004-07-28 | 2006-02-09 | Fujitsu Display Technologies Corp | 液晶表示装置及びその焼き付き防止方法 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2010024058A1 (ja) | 2012-01-26 |
KR20110050528A (ko) | 2011-05-13 |
RU2469367C1 (ru) | 2012-12-10 |
US8411216B2 (en) | 2013-04-02 |
CN102132204B (zh) | 2013-06-26 |
EP2328014A4 (en) | 2011-12-28 |
US20110141376A1 (en) | 2011-06-16 |
EP2328014A1 (en) | 2011-06-01 |
WO2010024058A1 (ja) | 2010-03-04 |
CN102132204A (zh) | 2011-07-20 |
RU2011111264A (ru) | 2012-09-27 |
BRPI0917349A2 (pt) | 2015-11-17 |
KR101247936B1 (ko) | 2013-03-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5431335B2 (ja) | アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法 | |
JP5220863B2 (ja) | アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機 | |
JP5107439B2 (ja) | アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機 | |
WO2010100788A1 (ja) | アクティブマトリクス基板、液晶パネル、液晶表示装置、液晶表示ユニット、テレビジョン受像機 | |
JP5323856B2 (ja) | アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機 | |
WO2010100789A1 (ja) | アクティブマトリクス基板、アクティブマトリクス基板の製造方法、液晶パネル、液晶パネルの製造方法、液晶表示装置、液晶表示ユニット、テレビジョン受像機 | |
WO2010100790A1 (ja) | アクティブマトリクス基板、アクティブマトリクス基板の製造方法、液晶パネル、液晶パネルの製造方法、液晶表示装置、液晶表示ユニット、テレビジョン受像機 | |
JP5107437B2 (ja) | アクティブマトリクス基板、アクティブマトリクス基板の製造方法、液晶パネル、液晶パネルの製造方法、液晶表示装置、液晶表示ユニット、テレビジョン受像機 | |
JP5143905B2 (ja) | アクティブマトリクス基板、液晶パネル、液晶表示装置、液晶表示ユニット、テレビジョン受像機 | |
JP5318888B2 (ja) | 液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機 | |
JP5301567B2 (ja) | アクティブマトリクス基板、アクティブマトリクス基板の製造方法、液晶パネル、液晶パネルの製造方法、液晶表示装置、液晶表示ユニット、テレビジョン受像機 | |
US8547492B2 (en) | Active matrix substrate, liquid crystal panel, liquid crystal display device, liquid crystal display unit and television receiver | |
WO2009144966A1 (ja) | アクティブマトリクス基板、アクティブマトリクス基板の製造方法、液晶パネル、液晶パネルの製造方法、液晶表示装置、液晶表示ユニット、テレビジョン受像機 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130129 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130326 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20131105 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131204 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5431335 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |