JP5430826B2 - 窒化物半導体レーザ素子 - Google Patents

窒化物半導体レーザ素子 Download PDF

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Publication number
JP5430826B2
JP5430826B2 JP2007017547A JP2007017547A JP5430826B2 JP 5430826 B2 JP5430826 B2 JP 5430826B2 JP 2007017547 A JP2007017547 A JP 2007017547A JP 2007017547 A JP2007017547 A JP 2007017547A JP 5430826 B2 JP5430826 B2 JP 5430826B2
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Prior art keywords
film
nitride semiconductor
semiconductor laser
thickness
light emitting
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JP2007017547A
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Japanese (ja)
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JP2007273953A5 (enExample
JP2007273953A (ja
Inventor
佳伸 川口
剛 神川
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Sharp Corp
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Sharp Corp
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Priority to JP2007017547A priority Critical patent/JP5430826B2/ja
Priority to US11/713,760 priority patent/US7792169B2/en
Priority to CN200710085508.6A priority patent/CN101034727B/zh
Publication of JP2007273953A publication Critical patent/JP2007273953A/ja
Publication of JP2007273953A5 publication Critical patent/JP2007273953A5/ja
Priority to US12/805,644 priority patent/US9190806B2/en
Application granted granted Critical
Publication of JP5430826B2 publication Critical patent/JP5430826B2/ja
Priority to US14/881,523 priority patent/US9660413B2/en
Priority to US15/583,176 priority patent/US20170237230A1/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0021—Degradation or life time measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/221—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials containing aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP2007017547A 2006-03-08 2007-01-29 窒化物半導体レーザ素子 Active JP5430826B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2007017547A JP5430826B2 (ja) 2006-03-08 2007-01-29 窒化物半導体レーザ素子
US11/713,760 US7792169B2 (en) 2006-03-08 2007-03-05 Nitride semiconductor light emitting device
CN200710085508.6A CN101034727B (zh) 2006-03-08 2007-03-07 氮化物半导体发光器件
US12/805,644 US9190806B2 (en) 2006-03-08 2010-08-11 Nitride semiconductor light emitting device
US14/881,523 US9660413B2 (en) 2006-03-08 2015-10-13 Nitride semiconductor light emitting device
US15/583,176 US20170237230A1 (en) 2006-03-08 2017-05-01 Nitride semiconductor light emitting device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006062636 2006-03-08
JP2006062636 2006-03-08
JP2007017547A JP5430826B2 (ja) 2006-03-08 2007-01-29 窒化物半導体レーザ素子

Publications (3)

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JP2007273953A JP2007273953A (ja) 2007-10-18
JP2007273953A5 JP2007273953A5 (enExample) 2010-03-11
JP5430826B2 true JP5430826B2 (ja) 2014-03-05

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US (4) US7792169B2 (enExample)
JP (1) JP5430826B2 (enExample)
CN (1) CN101034727B (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103814A (ja) * 2005-10-07 2007-04-19 Sharp Corp 窒化物半導体発光素子およびその製造方法
JP5191650B2 (ja) * 2005-12-16 2013-05-08 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
KR100853241B1 (ko) * 2005-12-16 2008-08-20 샤프 가부시키가이샤 질화물 반도체 발광소자 및 질화물 반도체 레이저 소자의제조방법
JP5004597B2 (ja) * 2006-03-06 2012-08-22 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5430826B2 (ja) 2006-03-08 2014-03-05 シャープ株式会社 窒化物半導体レーザ素子
JP4444304B2 (ja) * 2006-04-24 2010-03-31 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
US7668218B2 (en) 2007-02-20 2010-02-23 Nichia Corporation Nitride semiconductor laser element
US7701995B2 (en) 2007-07-06 2010-04-20 Nichia Corporation Nitride semiconductor laser element
JP5014967B2 (ja) * 2007-12-06 2012-08-29 シャープ株式会社 発光素子及び発光素子の製造方法
JP5183516B2 (ja) * 2008-02-15 2013-04-17 三洋電機株式会社 半導体レーザ素子
JP5093686B2 (ja) 2008-08-27 2012-12-12 富士電機株式会社 磁気記録媒体用保護膜の形成方法
JP2010146683A (ja) * 2008-12-22 2010-07-01 Fuji Electric Device Technology Co Ltd 保護膜の形成方法、及び当該方法により得られた保護膜、並びに当該保護膜を含む磁気記録媒体
KR20100122998A (ko) * 2009-05-14 2010-11-24 엘지이노텍 주식회사 발광소자 및 그 제조방법
US9250044B1 (en) * 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
US9800017B1 (en) 2009-05-29 2017-10-24 Soraa Laser Diode, Inc. Laser device and method for a vehicle
JP4621791B2 (ja) * 2009-06-11 2011-01-26 シャープ株式会社 窒化物半導体レーザ素子
JP2011060932A (ja) * 2009-09-09 2011-03-24 Panasonic Corp 窒化物半導体発光装置
KR101221722B1 (ko) * 2011-03-04 2013-01-11 주식회사 엘지화학 전도성 구조체 및 이의 제조방법
CN102828149A (zh) * 2011-06-13 2012-12-19 鸿富锦精密工业（深圳）有限公司 镀膜件及其制造方法
US11437774B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. High-luminous flux laser-based white light source
DE102015116335B4 (de) * 2015-09-28 2024-10-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser
US10714900B2 (en) * 2018-06-04 2020-07-14 Ii-Vi Delaware, Inc. Ex-situ conditioning of laser facets and passivated devices formed using the same
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
US12000552B2 (en) 2019-01-18 2024-06-04 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system for a vehicle
US12152742B2 (en) 2019-01-18 2024-11-26 Kyocera Sld Laser, Inc. Laser-based light guide-coupled wide-spectrum light system
CN112151651A (zh) * 2020-08-21 2020-12-29 华灿光电(苏州）有限公司 紫外发光二极管外延片及其制备方法
CN116247512B (zh) * 2023-03-31 2025-08-29 中国科学院半导体研究所 光子晶体激光器

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US14323A (en) * 1856-02-26 Improved mode of constructing walls and floors of cellars
JP2884603B2 (ja) 1989-07-17 1999-04-19 住友電気工業株式会社 半導体レーザ素子
JPH03142892A (ja) 1989-10-27 1991-06-18 Sharp Corp 半導体レーザ素子
US5196958A (en) 1989-10-31 1993-03-23 U.S. Philips Corporation Optical amplifier having gain at two separated wavelengths
JP2743106B2 (ja) * 1990-01-12 1998-04-22 アルプス電気株式会社 半導体レーザ
US5231062A (en) 1990-08-09 1993-07-27 Minnesota Mining And Manufacturing Company Transparent aluminum oxynitride-based ceramic article
JPH06291422A (ja) * 1993-04-02 1994-10-18 Canon Inc 光半導体素子
JP3184031B2 (ja) 1993-08-25 2001-07-09 富士通株式会社 光半導体素子装置及び光半導体装置の製造方法
JPH07312459A (ja) 1994-05-16 1995-11-28 Canon Inc 光半導体素子
JP3209895B2 (ja) 1995-09-08 2001-09-17 新日本製鐵株式会社 大径回転体の気密装置
JPH09194204A (ja) 1995-11-16 1997-07-29 Matsushita Electric Ind Co Ltd 窒化アルミニウムの製造方法および半導体発光素子
JPH09162496A (ja) 1995-12-12 1997-06-20 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ及びその製造方法
JP3774503B2 (ja) * 1996-04-17 2006-05-17 日本オプネクスト株式会社 半導体レーザ素子およびその製造方法
US5741724A (en) 1996-12-27 1998-04-21 Motorola Method of growing gallium nitride on a spinel substrate
US6486068B2 (en) * 1998-01-08 2002-11-26 Toyoda Gosei Co., Ltd. Method for manufacturing group III nitride compound semiconductor laser diodes
JP2971435B2 (ja) 1998-03-30 1999-11-08 東芝電子エンジニアリング株式会社 半導体レーザおよびその製造方法
US6249534B1 (en) * 1998-04-06 2001-06-19 Matsushita Electronics Corporation Nitride semiconductor laser device
JP3430036B2 (ja) 1998-10-29 2003-07-28 松下電器産業株式会社 薄膜の形成方法及び半導体発光素子の製造方法
US6693935B2 (en) 2000-06-20 2004-02-17 Sony Corporation Semiconductor laser
JP4033644B2 (ja) 2000-07-18 2008-01-16 日亜化学工業株式会社 窒化ガリウム系発光素子
WO2002025746A1 (en) 2000-09-21 2002-03-28 Sharp Kabushiki Kaisha Nitride semiconductor light emitting element and optical device containing it
US7053413B2 (en) 2000-10-23 2006-05-30 General Electric Company Homoepitaxial gallium-nitride-based light emitting device and method for producing
JP2002237648A (ja) 2001-02-13 2002-08-23 Fuji Photo Film Co Ltd 半導体レーザ素子
JP4977931B2 (ja) 2001-03-06 2012-07-18 ソニー株式会社 ＧａＮ系半導体レーザの製造方法
JP3849758B2 (ja) * 2001-04-12 2006-11-22 ソニー株式会社 半導体レーザ素子
ATE487255T1 (de) 2001-05-31 2010-11-15 Nichia Corp Halbleiterlaserelement
JP2003017745A (ja) 2001-06-29 2003-01-17 Shiro Sakai 窒化ガリウム系発光素子
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
US7067849B2 (en) * 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US6812152B2 (en) 2001-08-09 2004-11-02 Comlase Ab Method to obtain contamination free laser mirrors and passivation of these
JP2003078199A (ja) 2001-09-03 2003-03-14 Fuji Photo Film Co Ltd 半導体レーザ装置
JP2003101126A (ja) * 2001-09-27 2003-04-04 Mitsubishi Electric Corp 半導体レーザ装置の製造方法及び半導体レーザ装置
PL374180A1 (en) 2001-10-26 2005-10-03 Ammono Sp.Z O.O. Nitride semiconductor laser element, and production method therefor
JP4236840B2 (ja) * 2001-12-25 2009-03-11 富士フイルム株式会社 半導体レーザ素子
JP2003332688A (ja) * 2002-03-08 2003-11-21 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体レーザ
JP3856300B2 (ja) 2002-03-11 2006-12-13 ソニー株式会社 半導体レーザ素子
US6744076B2 (en) * 2002-03-14 2004-06-01 The Circle For The Promotion Of Science And Engineering Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device
CN1287684C (zh) 2002-12-03 2006-12-06 黄德福 芝麻酱干
JP4097552B2 (ja) 2003-03-27 2008-06-11 三菱電機株式会社 半導体レーザ装置
JP2004327581A (ja) 2003-04-23 2004-11-18 Mitsubishi Electric Corp 半導体レーザ装置
JP2005079406A (ja) * 2003-09-01 2005-03-24 Matsushita Electric Ind Co Ltd 半導体レーザの製造方法
US7118813B2 (en) 2003-11-14 2006-10-10 Cree, Inc. Vicinal gallium nitride substrate for high quality homoepitaxy
JP2005175111A (ja) * 2003-12-10 2005-06-30 Hitachi Ltd 半導体レーザ及びその製造方法
US7356060B2 (en) 2004-03-15 2008-04-08 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
JP2005340625A (ja) 2004-05-28 2005-12-08 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2006128475A (ja) 2004-10-29 2006-05-18 Mitsubishi Electric Corp 半導体レーザ
JP4451371B2 (ja) 2004-12-20 2010-04-14 シャープ株式会社 窒化物半導体レーザ素子
JP5285835B2 (ja) 2005-07-13 2013-09-11 株式会社東芝 半導体素子およびその製造方法
JP2007095758A (ja) * 2005-09-27 2007-04-12 Matsushita Electric Ind Co Ltd 半導体レーザ
TW200717843A (en) * 2005-10-19 2007-05-01 Epistar Corp Light-emitting element with high-light-extracting-efficiency
JP4776514B2 (ja) * 2005-12-16 2011-09-21 シャープ株式会社 窒化物半導体レーザ素子
KR100853241B1 (ko) 2005-12-16 2008-08-20 샤프 가부시키가이샤 질화물 반도체 발광소자 및 질화물 반도체 레이저 소자의제조방법
JP2007201373A (ja) 2006-01-30 2007-08-09 Sharp Corp 半導体レーザ素子
JP5004597B2 (ja) 2006-03-06 2012-08-22 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5430826B2 (ja) * 2006-03-08 2014-03-05 シャープ株式会社 窒化物半導体レーザ素子
JP4444304B2 (ja) 2006-04-24 2010-03-31 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法

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