JP5423613B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5423613B2 JP5423613B2 JP2010182495A JP2010182495A JP5423613B2 JP 5423613 B2 JP5423613 B2 JP 5423613B2 JP 2010182495 A JP2010182495 A JP 2010182495A JP 2010182495 A JP2010182495 A JP 2010182495A JP 5423613 B2 JP5423613 B2 JP 5423613B2
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- Prior art keywords
- trench
- depth
- oxygen ions
- semiconductor device
- manufacturing
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims description 35
- 229910052760 oxygen Inorganic materials 0.000 claims description 29
- 239000001301 oxygen Substances 0.000 claims description 29
- -1 oxygen ions Chemical class 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 238000002513 implantation Methods 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Images
Landscapes
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
16 トレンチ(第1のトレンチ)
18 酸素イオン
20 Si3N4膜(窒化膜)
22 SiO2膜(酸化膜)
24 トレンチ(第2のトレンチ)
28 ゲート電極(電極)
36 キャパシタ
Claims (3)
- 所望の深さよりも浅い深さを持つ第1のトレンチを半導体基板の主面に形成する工程と、
前記第1のトレンチの深さを測定する工程と、
前記第1のトレンチの底面から前記半導体基板に酸素イオンを注入する工程と、
熱処理を行って前記酸素イオンを注入した位置に酸化膜を形成する工程と、
前記酸化膜をエッチングストッパとして用いて、前記第1のトレンチの前記底面から前記半導体基板を更にエッチングして第2のトレンチを形成する工程と、
前記第2のトレンチを形成した後に前記酸化膜を除去する工程とを備え、
前記酸素イオンを注入する際に、測定した前記第1のトレンチの深さと前記所望の深さの差に基づいて酸素イオンの注入エネルギーを調整して、前記半導体基板の前記所望の深さに前記酸素イオンが注入されるようにすることを特徴とする半導体装置の製造方法。 - 前記酸素イオンを注入した後、前記熱処理を行う前に、前記半導体基板の前記主面と前記第1のトレンチの前記底面及び内壁を覆うように窒化膜を形成する工程と、
前記熱処理を行った後、前記第2のトレンチを形成する前に、前記窒化膜を除去する工程とを更に備えることを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記酸化膜を除去した後に、前記第2のトレンチ内に電極又はキャパシタを形成する工程を更に備えることを特徴とする請求項1又は2に記載の半導体装置の製造方法。
Priority Applications (1)
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JP2010182495A JP5423613B2 (ja) | 2010-08-17 | 2010-08-17 | 半導体装置の製造方法 |
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JP2010182495A JP5423613B2 (ja) | 2010-08-17 | 2010-08-17 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2012043903A JP2012043903A (ja) | 2012-03-01 |
JP5423613B2 true JP5423613B2 (ja) | 2014-02-19 |
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JP2010182495A Active JP5423613B2 (ja) | 2010-08-17 | 2010-08-17 | 半導体装置の製造方法 |
Country Status (1)
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JP (1) | JP5423613B2 (ja) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001015489A (ja) * | 1999-06-29 | 2001-01-19 | New Japan Radio Co Ltd | ドライエッチング方法 |
JP2005191061A (ja) * | 2003-12-24 | 2005-07-14 | Seiko Epson Corp | 半導体装置の製造方法 |
JP5144964B2 (ja) * | 2007-06-05 | 2013-02-13 | スパンション エルエルシー | 半導体装置の製造方法 |
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JP2012043903A (ja) | 2012-03-01 |
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