JP5422396B2 - マイクロ波プラズマ処理装置 - Google Patents

マイクロ波プラズマ処理装置 Download PDF

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Publication number
JP5422396B2
JP5422396B2 JP2009551593A JP2009551593A JP5422396B2 JP 5422396 B2 JP5422396 B2 JP 5422396B2 JP 2009551593 A JP2009551593 A JP 2009551593A JP 2009551593 A JP2009551593 A JP 2009551593A JP 5422396 B2 JP5422396 B2 JP 5422396B2
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JP
Japan
Prior art keywords
microwave
plasma processing
chamber
processing apparatus
microwave radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009551593A
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English (en)
Japanese (ja)
Other versions
JPWO2009096515A1 (ja
Inventor
欣也 太田
才忠 田
浩 小林
吉宏 佐藤
俊彦 塩澤
浩治 前川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2009551593A priority Critical patent/JP5422396B2/ja
Publication of JPWO2009096515A1 publication Critical patent/JPWO2009096515A1/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2009551593A 2008-01-31 2009-01-30 マイクロ波プラズマ処理装置 Expired - Fee Related JP5422396B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009551593A JP5422396B2 (ja) 2008-01-31 2009-01-30 マイクロ波プラズマ処理装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2008021346 2008-01-31
JP2008021346 2008-01-31
JP2009551593A JP5422396B2 (ja) 2008-01-31 2009-01-30 マイクロ波プラズマ処理装置
PCT/JP2009/051563 WO2009096515A1 (ja) 2008-01-31 2009-01-30 マイクロ波プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPWO2009096515A1 JPWO2009096515A1 (ja) 2011-05-26
JP5422396B2 true JP5422396B2 (ja) 2014-02-19

Family

ID=40912858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009551593A Expired - Fee Related JP5422396B2 (ja) 2008-01-31 2009-01-30 マイクロ波プラズマ処理装置

Country Status (5)

Country Link
US (1) US20100307685A1 (ko)
JP (1) JP5422396B2 (ko)
KR (1) KR20100106602A (ko)
CN (1) CN102090153A (ko)
WO (1) WO2009096515A1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012109080A (ja) * 2010-11-16 2012-06-07 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法
JP2014112644A (ja) * 2012-11-06 2014-06-19 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP6134274B2 (ja) * 2014-02-17 2017-05-24 株式会社東芝 半導体製造装置および半導体装置の製造方法
JP2016086099A (ja) * 2014-10-27 2016-05-19 東京エレクトロン株式会社 プラズマ処理装置
EP3276651A1 (en) * 2016-07-28 2018-01-31 NeoCoat SA Method for manufacturing an annular thin film of synthetic material and device for carrying out said method
JP7203950B2 (ja) * 2019-03-19 2023-01-13 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置及びプログラム

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07122396A (ja) * 1993-10-28 1995-05-12 Kobe Steel Ltd プラズマ装置へのマイクロ波導入装置
JP2002280196A (ja) * 2001-03-15 2002-09-27 Micro Denshi Kk マイクロ波を利用したプラズマ発生装置
JP2005100931A (ja) * 2003-09-04 2005-04-14 Tokyo Electron Ltd プラズマ処理装置
WO2005078782A1 (ja) * 2004-02-16 2005-08-25 Tokyo Electron Limited プラズマ処理装置及びプラズマ処理方法
JP2006179477A (ja) * 2000-03-30 2006-07-06 Tokyo Electron Ltd プラズマ処理装置
JP2007213994A (ja) * 2006-02-09 2007-08-23 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
WO2007136043A1 (ja) * 2006-05-22 2007-11-29 Tokyo Electron Limited 平面アンテナ部材及びこれを用いたプラズマ処理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234526A (en) * 1991-05-24 1993-08-10 Lam Research Corporation Window for microwave plasma processing device
US6870123B2 (en) * 1998-10-29 2005-03-22 Canon Kabushiki Kaisha Microwave applicator, plasma processing apparatus having same, and plasma processing method
JP3828539B2 (ja) * 2001-06-20 2006-10-04 忠弘 大見 マイクロ波プラズマ処理装置、プラズマ処理方法及びマイクロ波放射部材
JP3787297B2 (ja) * 2001-10-31 2006-06-21 株式会社東芝 プラズマ処理装置
CN100492591C (zh) * 2003-09-04 2009-05-27 东京毅力科创株式会社 等离子处理装置
JP2007109670A (ja) * 2006-12-22 2007-04-26 Tokyo Electron Ltd プラズマ処理装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07122396A (ja) * 1993-10-28 1995-05-12 Kobe Steel Ltd プラズマ装置へのマイクロ波導入装置
JP2006179477A (ja) * 2000-03-30 2006-07-06 Tokyo Electron Ltd プラズマ処理装置
JP2002280196A (ja) * 2001-03-15 2002-09-27 Micro Denshi Kk マイクロ波を利用したプラズマ発生装置
JP2005100931A (ja) * 2003-09-04 2005-04-14 Tokyo Electron Ltd プラズマ処理装置
WO2005078782A1 (ja) * 2004-02-16 2005-08-25 Tokyo Electron Limited プラズマ処理装置及びプラズマ処理方法
JP2007213994A (ja) * 2006-02-09 2007-08-23 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
WO2007136043A1 (ja) * 2006-05-22 2007-11-29 Tokyo Electron Limited 平面アンテナ部材及びこれを用いたプラズマ処理装置
JP2007311668A (ja) * 2006-05-22 2007-11-29 Tokyo Electron Ltd 平面アンテナ部材及びこれを用いたプラズマ処理装置

Also Published As

Publication number Publication date
JPWO2009096515A1 (ja) 2011-05-26
KR20100106602A (ko) 2010-10-01
WO2009096515A1 (ja) 2009-08-06
US20100307685A1 (en) 2010-12-09
CN102090153A (zh) 2011-06-08

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