CN102090153A - 微波等离子体处理装置 - Google Patents

微波等离子体处理装置 Download PDF

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Publication number
CN102090153A
CN102090153A CN2009801039491A CN200980103949A CN102090153A CN 102090153 A CN102090153 A CN 102090153A CN 2009801039491 A CN2009801039491 A CN 2009801039491A CN 200980103949 A CN200980103949 A CN 200980103949A CN 102090153 A CN102090153 A CN 102090153A
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CN
China
Prior art keywords
microwave
processing apparatus
plasma processing
chamber
penetrating plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2009801039491A
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English (en)
Chinese (zh)
Inventor
太田欣也
田才忠
小林浩
佐藤吉宏
盐泽俊彦
前川浩治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN102090153A publication Critical patent/CN102090153A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
CN2009801039491A 2008-01-31 2009-01-30 微波等离子体处理装置 Pending CN102090153A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008-021346 2008-01-31
JP2008021346 2008-01-31
PCT/JP2009/051563 WO2009096515A1 (ja) 2008-01-31 2009-01-30 マイクロ波プラズマ処理装置

Publications (1)

Publication Number Publication Date
CN102090153A true CN102090153A (zh) 2011-06-08

Family

ID=40912858

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801039491A Pending CN102090153A (zh) 2008-01-31 2009-01-30 微波等离子体处理装置

Country Status (5)

Country Link
US (1) US20100307685A1 (ko)
JP (1) JP5422396B2 (ko)
KR (1) KR20100106602A (ko)
CN (1) CN102090153A (ko)
WO (1) WO2009096515A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109477213A (zh) * 2016-07-28 2019-03-15 尼奥科特股份公司 制备合成材料的环状薄膜的方法及实施该方法的装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012109080A (ja) * 2010-11-16 2012-06-07 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法
JP2014112644A (ja) * 2012-11-06 2014-06-19 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP6134274B2 (ja) * 2014-02-17 2017-05-24 株式会社東芝 半導体製造装置および半導体装置の製造方法
JP2016086099A (ja) * 2014-10-27 2016-05-19 東京エレクトロン株式会社 プラズマ処理装置
JP7203950B2 (ja) * 2019-03-19 2023-01-13 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置及びプログラム

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234526A (en) * 1991-05-24 1993-08-10 Lam Research Corporation Window for microwave plasma processing device
JPH07122396A (ja) * 1993-10-28 1995-05-12 Kobe Steel Ltd プラズマ装置へのマイクロ波導入装置
JP2003142457A (ja) * 2001-10-31 2003-05-16 Toshiba Corp プラズマ処理装置
US20030168436A1 (en) * 2001-06-20 2003-09-11 Tadahiro Ohmi Microwave plasma processing device, plasma processing method, and microwave radiating member
EP1391911A1 (en) * 2001-03-15 2004-02-25 Mikuro Denshi Corporation Limited Microwave plasma generator
US6870123B2 (en) * 1998-10-29 2005-03-22 Canon Kabushiki Kaisha Microwave applicator, plasma processing apparatus having same, and plasma processing method
CN1846300A (zh) * 2003-09-04 2006-10-11 东京毅力科创株式会社 等离子处理装置
JP2007109670A (ja) * 2006-12-22 2007-04-26 Tokyo Electron Ltd プラズマ処理装置
TW200818309A (en) * 2006-05-22 2008-04-16 Tokyo Electron Ltd Planar antenna member and plasma processing apparatus employing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4522356B2 (ja) * 2000-03-30 2010-08-11 東京エレクトロン株式会社 プラズマ処理装置
JP4563729B2 (ja) * 2003-09-04 2010-10-13 東京エレクトロン株式会社 プラズマ処理装置
KR100872260B1 (ko) * 2004-02-16 2008-12-05 도쿄엘렉트론가부시키가이샤 플라즈마 처리장치 및 플라즈마 처리방법
JP4677918B2 (ja) * 2006-02-09 2011-04-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234526A (en) * 1991-05-24 1993-08-10 Lam Research Corporation Window for microwave plasma processing device
JPH07122396A (ja) * 1993-10-28 1995-05-12 Kobe Steel Ltd プラズマ装置へのマイクロ波導入装置
US6870123B2 (en) * 1998-10-29 2005-03-22 Canon Kabushiki Kaisha Microwave applicator, plasma processing apparatus having same, and plasma processing method
EP1391911A1 (en) * 2001-03-15 2004-02-25 Mikuro Denshi Corporation Limited Microwave plasma generator
US20030168436A1 (en) * 2001-06-20 2003-09-11 Tadahiro Ohmi Microwave plasma processing device, plasma processing method, and microwave radiating member
JP2003142457A (ja) * 2001-10-31 2003-05-16 Toshiba Corp プラズマ処理装置
CN1846300A (zh) * 2003-09-04 2006-10-11 东京毅力科创株式会社 等离子处理装置
TW200818309A (en) * 2006-05-22 2008-04-16 Tokyo Electron Ltd Planar antenna member and plasma processing apparatus employing the same
JP2007109670A (ja) * 2006-12-22 2007-04-26 Tokyo Electron Ltd プラズマ処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109477213A (zh) * 2016-07-28 2019-03-15 尼奥科特股份公司 制备合成材料的环状薄膜的方法及实施该方法的装置

Also Published As

Publication number Publication date
JPWO2009096515A1 (ja) 2011-05-26
JP5422396B2 (ja) 2014-02-19
KR20100106602A (ko) 2010-10-01
US20100307685A1 (en) 2010-12-09
WO2009096515A1 (ja) 2009-08-06

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Application publication date: 20110608