JP5419846B2 - 化学的機械的研磨を監視するためのデータ処理 - Google Patents
化学的機械的研磨を監視するためのデータ処理 Download PDFInfo
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- JP5419846B2 JP5419846B2 JP2010243759A JP2010243759A JP5419846B2 JP 5419846 B2 JP5419846 B2 JP 5419846B2 JP 2010243759 A JP2010243759 A JP 2010243759A JP 2010243759 A JP2010243759 A JP 2010243759A JP 5419846 B2 JP5419846 B2 JP 5419846B2
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- 238000005498 polishing Methods 0.000 title claims description 105
- 239000000126 substance Substances 0.000 title claims description 6
- 238000012545 processing Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims description 150
- 238000005259 measurement Methods 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 25
- 238000012544 monitoring process Methods 0.000 claims description 22
- 238000011065 in-situ storage Methods 0.000 claims description 17
- 230000010363 phase shift Effects 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 description 40
- 239000002184 metal Substances 0.000 description 37
- 229910052751 metal Inorganic materials 0.000 description 37
- 238000005070 sampling Methods 0.000 description 17
- 230000008859 change Effects 0.000 description 16
- 239000002002 slurry Substances 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 6
- 238000010606 normalization Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
Claims (9)
- 基板上の基板層の処理を監視する方法において、
研磨するステップの前に、前記基板の面を横切るインシトゥ監視システムのセンサの走査に沿って前記基板層の厚さに応じた測定値の組を表す基準トレースを発生するステップと、
化学的機械的研磨システムで前記基板を研磨するステップと、
研磨中に、前記基板の面を横切って前記インシトゥ監視システムの前記センサを走査させることにより、前記基板層の厚さに応じた測定値の組を含む測定トレースを発生するステップと、
前記基準トレースを使用して前記測定トレースを変更するステップであって、前記測定トレースを前記基準トレースで除算して、前記基板層の厚さを表す変更された測定トレースを生成することを含む、ステップと、
前記変更された測定トレースから、研磨終了点に到達したか否かを決定するステップと、
を備えた方法。 - 前記インシトゥ監視システムが、渦電流検出器を備える、請求項1に記載の方法。
- 前記測定トレースが、前記渦電流検出器の増幅器から受け取られる信号の振幅を備える、請求項2に記載の方法。
- 前記測定トレースが、前記渦電流検出器の増幅器から受け取られる信号と前記渦電流検出器の発振器から受け取られる信号との間の位相シフトを備える、請求項2に記載の方法。
- 前記基準トレースを発生するステップが、前記センサの感知領域と前記基板との間の重畳を計算する段階を含む、請求項1に記載の方法。
- 前記測定トレースを変更するステップが、前記感知領域と前記基板との間の部分的重畳による信号ロスを補償する段階を含む、請求項5に記載の方法。
- 前記基準トレースを発生するステップが、前記研磨するステップの前に前記基板を走査する段階を含む、請求項1に記載の方法。
- 前記インシトゥ監視システムが、光学的監視システムを備える、請求項1に記載の方法。
- 基板層を有する基板を保持するためのキャリアと、
研磨表面と、
前記キャリア及び前記研磨表面の少なくとも一方に接続され、前記基板と前記研磨表面との間に相対的運動を発生させるモーターと、
前記基板が前記研磨表面に接触している間に前記基板の面を横切って走査させることにより、前記基板層の厚さに応じた測定値の組を含む測定トレースを発生するセンサを含む監視システムと、
コントローラであって、
研磨するステップの前に、前記基板の面を横切るインシトゥ監視システムのセンサの走査を表す基準トレースを発生し、
前記測定トレースを前記基準トレースで除算して、前記基板層の厚さを表す変更された測定トレースを生成することを含めて、前記基準トレースを使用して前記測定トレースを変更し、更に、
前記変更された測定トレースから、研磨終了点に到達したか否かを決定する、
というように構成されたコントローラと、
を備えた研磨装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/464,673 US7008296B2 (en) | 2003-06-18 | 2003-06-18 | Data processing for monitoring chemical mechanical polishing |
US10/464,673 | 2003-06-18 |
Related Parent Applications (1)
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JP2006517311A Division JP4750022B2 (ja) | 2003-06-18 | 2004-06-16 | 化学的機械的研磨を監視するためのデータ処理 |
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Publication Number | Publication Date |
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JP2011023752A JP2011023752A (ja) | 2011-02-03 |
JP5419846B2 true JP5419846B2 (ja) | 2014-02-19 |
Family
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JP2006517311A Active JP4750022B2 (ja) | 2003-06-18 | 2004-06-16 | 化学的機械的研磨を監視するためのデータ処理 |
JP2010243759A Active JP5419846B2 (ja) | 2003-06-18 | 2010-10-29 | 化学的機械的研磨を監視するためのデータ処理 |
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Country Status (6)
Country | Link |
---|---|
US (2) | US7008296B2 (ja) |
JP (2) | JP4750022B2 (ja) |
KR (1) | KR101097873B1 (ja) |
CN (1) | CN1805825B (ja) |
TW (1) | TWI283618B (ja) |
WO (1) | WO2004113021A1 (ja) |
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-
2003
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-
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- 2004-06-16 CN CN2004800169226A patent/CN1805825B/zh active Active
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- 2004-06-16 JP JP2006517311A patent/JP4750022B2/ja active Active
- 2004-06-18 TW TW093117789A patent/TWI283618B/zh active
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Also Published As
Publication number | Publication date |
---|---|
TW200513349A (en) | 2005-04-16 |
US7500901B2 (en) | 2009-03-10 |
TWI283618B (en) | 2007-07-11 |
JP2011023752A (ja) | 2011-02-03 |
KR20060055469A (ko) | 2006-05-23 |
JP4750022B2 (ja) | 2011-08-17 |
US20060009131A1 (en) | 2006-01-12 |
US20040259470A1 (en) | 2004-12-23 |
CN1805825A (zh) | 2006-07-19 |
JP2007523756A (ja) | 2007-08-23 |
WO2004113021A1 (en) | 2004-12-29 |
CN1805825B (zh) | 2011-08-17 |
KR101097873B1 (ko) | 2011-12-23 |
US7008296B2 (en) | 2006-03-07 |
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