CN106298576B - Cmp全工艺过程金属膜厚数据的离线处理方法 - Google Patents
Cmp全工艺过程金属膜厚数据的离线处理方法 Download PDFInfo
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- CN106298576B CN106298576B CN201610874828.9A CN201610874828A CN106298576B CN 106298576 B CN106298576 B CN 106298576B CN 201610874828 A CN201610874828 A CN 201610874828A CN 106298576 B CN106298576 B CN 106298576B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
- G01B7/10—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610874828.9A CN106298576B (zh) | 2016-09-30 | 2016-09-30 | Cmp全工艺过程金属膜厚数据的离线处理方法 |
Applications Claiming Priority (1)
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CN201610874828.9A CN106298576B (zh) | 2016-09-30 | 2016-09-30 | Cmp全工艺过程金属膜厚数据的离线处理方法 |
Publications (2)
Publication Number | Publication Date |
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CN106298576A CN106298576A (zh) | 2017-01-04 |
CN106298576B true CN106298576B (zh) | 2019-07-02 |
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CN201610874828.9A Expired - Fee Related CN106298576B (zh) | 2016-09-30 | 2016-09-30 | Cmp全工艺过程金属膜厚数据的离线处理方法 |
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CN (1) | CN106298576B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107214610B (zh) * | 2017-05-05 | 2019-04-23 | 清华大学 | 铜cmp的在线平坦度控制系统 |
CN110046676B (zh) * | 2019-04-26 | 2021-08-03 | 厦门大学 | 一种基于声暴露级的海洋工程信号自动提取方法 |
CN110207584B (zh) * | 2019-04-30 | 2020-12-04 | 清华大学 | 一种膜厚测量方法、系统及化学机械抛光装置 |
CN113681457B (zh) * | 2021-09-16 | 2022-11-04 | 华海清科股份有限公司 | 一种膜厚测量方法和化学机械抛光设备 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1805825A (zh) * | 2003-06-18 | 2006-07-19 | 应用材料公司 | 用于监控化学机械抛光的数据处理 |
CN102445144A (zh) * | 2011-09-22 | 2012-05-09 | 清华大学 | 用于在线膜厚测量系统的标定方法及标定装置 |
CN103677832A (zh) * | 2013-12-13 | 2014-03-26 | 清华大学 | 晶圆铜膜厚度的绘图方法及系统 |
CN105428229A (zh) * | 2014-09-17 | 2016-03-23 | 株式会社荏原制作所 | 膜厚信号处理装置、研磨装置、膜厚信号处理方法、及研磨方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW541425B (en) * | 2000-10-20 | 2003-07-11 | Ebara Corp | Frequency measuring device, polishing device using the same and eddy current sensor |
JP2002148012A (ja) * | 2000-11-08 | 2002-05-22 | Ulvac Japan Ltd | 膜厚測定装置及び膜厚測定方法 |
DE10122136B4 (de) * | 2001-05-08 | 2006-09-28 | Advanced Micro Devices, Inc., Sunnyvale | Grenzflächenhohlraumüberwachung in einem Damaszener-Prozess |
DE10157452B4 (de) * | 2001-11-23 | 2006-08-24 | Infineon Technologies Ag | Verfahren zum chemisch-mechanischen Polieren von Wafern |
CN101530983B (zh) * | 2002-10-17 | 2011-03-16 | 株式会社荏原制作所 | 抛光状态监测装置和抛光装置以及方法 |
-
2016
- 2016-09-30 CN CN201610874828.9A patent/CN106298576B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1805825A (zh) * | 2003-06-18 | 2006-07-19 | 应用材料公司 | 用于监控化学机械抛光的数据处理 |
CN102445144A (zh) * | 2011-09-22 | 2012-05-09 | 清华大学 | 用于在线膜厚测量系统的标定方法及标定装置 |
CN103677832A (zh) * | 2013-12-13 | 2014-03-26 | 清华大学 | 晶圆铜膜厚度的绘图方法及系统 |
CN105428229A (zh) * | 2014-09-17 | 2016-03-23 | 株式会社荏原制作所 | 膜厚信号处理装置、研磨装置、膜厚信号处理方法、及研磨方法 |
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CN106298576A (zh) | 2017-01-04 |
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Effective date of registration: 20171018 Address after: 100084 Beijing City, Haidian District Tsinghua Yuan Applicant after: TSINGHUA University Applicant after: HWATSING TECHNOLOGY Co.,Ltd. Address before: 300350, Tianjin City, Jinnan District Science and Technology Park, Hai Hing Road, No. 9, building No. 8 Applicant before: HWATSING TECHNOLOGY Co.,Ltd. Applicant before: Tsinghua University |
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Address after: 100084 Beijing City, Haidian District Tsinghua Yuan Co-patentee after: Huahaiqingke Co.,Ltd. Patentee after: TSINGHUA University Address before: 100084 Beijing City, Haidian District Tsinghua Yuan Co-patentee before: HWATSING TECHNOLOGY Co.,Ltd. Patentee before: TSINGHUA University |
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