JP5414455B2 - リソグラフィモデル較正のためのパターン選択 - Google Patents
リソグラフィモデル較正のためのパターン選択 Download PDFInfo
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- JP5414455B2 JP5414455B2 JP2009245323A JP2009245323A JP5414455B2 JP 5414455 B2 JP5414455 B2 JP 5414455B2 JP 2009245323 A JP2009245323 A JP 2009245323A JP 2009245323 A JP2009245323 A JP 2009245323A JP 5414455 B2 JP5414455 B2 JP 5414455B2
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- 238000001459 lithography Methods 0.000 title claims description 42
- 238000012360 testing method Methods 0.000 claims description 100
- 238000000034 method Methods 0.000 claims description 71
- 230000035945 sensitivity Effects 0.000 claims description 68
- 239000011159 matrix material Substances 0.000 claims description 54
- 238000005259 measurement Methods 0.000 claims description 22
- 230000000694 effects Effects 0.000 claims description 12
- 238000003860 storage Methods 0.000 claims description 10
- 238000000513 principal component analysis Methods 0.000 claims description 9
- 238000004364 calculation method Methods 0.000 claims description 7
- 238000010187 selection method Methods 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 38
- 238000013461 design Methods 0.000 description 29
- 230000008569 process Effects 0.000 description 27
- 239000000758 substrate Substances 0.000 description 27
- 230000003287 optical effect Effects 0.000 description 25
- 238000004891 communication Methods 0.000 description 16
- 238000003384 imaging method Methods 0.000 description 14
- 230000015654 memory Effects 0.000 description 14
- 238000004088 simulation Methods 0.000 description 14
- 230000005855 radiation Effects 0.000 description 13
- 230000006870 function Effects 0.000 description 12
- 238000013459 approach Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000005286 illumination Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000012937 correction Methods 0.000 description 6
- 230000006399 behavior Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000004422 calculation algorithm Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000002925 chemical effect Effects 0.000 description 3
- 238000011960 computer-aided design Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 239000013598 vector Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012804 iterative process Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000009394 selective breeding Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/10—Complex mathematical operations
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
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- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Data Mining & Analysis (AREA)
- Evolutionary Computation (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Software Systems (AREA)
- Mathematical Optimization (AREA)
- Mathematical Analysis (AREA)
- Computational Mathematics (AREA)
- Databases & Information Systems (AREA)
- Algebra (AREA)
- Pure & Applied Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Architecture (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
−投影ビームPBの放射を供給するための放射システムEx、IL。この特定のケースでは放射システムは放射源LAも含む。
−マスクMA(例えば、レチクル)を保持するためのマスクホルダが設けられ、アイテムPLに対してマスクを正確に位置決めするための第1の位置決め手段に接続された第1のオブジェクトテーブル(マスクテーブル)MT
−基板W(例えば、レジストコーティングシリコンウェーハ)を保持するための基板ホルダが設けられ、アイテムPLに対して基板を正確に位置決めするための第2の位置決め手段に接続された第2のオブジェクトテーブル(基板テーブル)WT
−マスクMAの照射部分を基板Wのターゲット部分C(例えば、1つ又は複数のダイを含む)上に結像するための投影システム(「レンズ」)PL(例えば、屈折、反射、又は反射屈折光学システム)
−ステップモードでは、マスクテーブルMTは本質的に静止状態に保持され、マスクイメージ全体が一度に(すなわち、単一「フラッシュ」で)ターゲット部分Cに投影される。次に、異なるターゲット部分CをビームPBで照射できるように、基板テーブルWTがx方向及び/又はy方向にシフトする。
−スキャンモードでは、所与のターゲット部分Cが単一「フラッシュ」で露光されないことを除いて、本質的に同じシナリオが適用される。その代わりに、マスクテーブルMTは速度vで所与の方向(いわゆる「スキャン方向」、例えば、y方向)に移動可能であり、従って、投影ビームPBはマスクイメージの上をスキャンするようになり、同時に、基板テーブルWTは速度V=Mvで同じ方向又は反対方向に同時に移動し、MはレンズPLの倍率である(典型的に、M=1/4又は1/5)。このように、解像度について妥協する必要なしに、相対的に大きいターゲット部分Cを露光することができる。
Claims (7)
- コンピュータリソグラフィモデル較正のためのテストパターン選択の方法であって、
候補テストパターンのプールを識別するステップと、
一組のリソグラフィモデルパラメータを識別するステップと、
前記一組のリソグラフィモデルパラメータの最適値を求める際に最も効果的な一組のテストパターンを前記候補テストパターンのプールから自動的に選択する自動的選択ステップと、
を含み、
前記自動的選択ステップにおいては、前記候補テストパターンのプールにおける各テストパターンが、前記一組のリソグラフィモデルパラメータのうちの1つ又は複数の特定のリソグラフィモデルパラメータに対して敏感になるように、且つ、該特定のリソグラフィモデルパラメータの効果を明確に区別できるように、前記一組のテストパターンが選択され、
前記自動的選択ステップは、
前記候補テストパターンのプール及び前記一組のリソグラフィモデルパラメータに対応する感度行列を作成する感度行列作成ステップと、
前記感度行列を使用して計算を実行し、前記候補テストパターンのプールのうちのどのテストパターンが、前記一組のリソグラフィモデルパラメータに対する最大感度を有するかを判断する計算実行ステップと、
前記最大感度を有すると判断されたテストパターンを前記一組のテストパターンに追加する追加ステップと、
前記一組のリソグラフィモデルパラメータのすべてに対応する前記候補テストパターンのプールが前記一組のテストパターンに追加されるまで、前記計算実行ステップと前記追加ステップを繰り返す繰り返しステップと、
を含み、
前記計算実行ステップが、前記感度行列について主成分分析を実行することを含み、
前記感度行列作成ステップが、前記候補テストパターンのプールに対応するシミュレートされた空間像に基づいてウェーハ測定不確定性を推定するステップ、又は、前記候補テストパターンのプールを含むマスクに基づいて空間像をシミュレートするステップを含む、
方法。 - 前記感度行列作成ステップが、前記特定のモデルパラメータの公称値を使用するステップを含む、請求項1記載の方法。
- 前記自動的選択ステップが、前記コンピュータリソグラフィモデルの正確さに関連する費用関数を最小限にすることを含む、請求項1記載の方法。
- 前記費用関数が、フルチップパターンセットを含む前記候補テストパターンのプールにおける特定の候補テストパターンに関するCD予測誤差を表す、請求項3記載の方法。
- 前記一組のテストパターンが、前記コンピュータリソグラフィモデルの公式において既知の物理及び化学を励起するように選択される、請求項1記載の方法。
- 前記一組のテストパターンに対応する測定されたウェーハデータを使用して、前記コンピュータリソグラフィモデルの公式によって課せられる予測精度の上限を実現するように前記一組のリソグラフィモデルパラメータの最適値に応じたモデル較正を駆動する、請求項5記載の方法。
- コンピュータリソグラフィモデルを較正するためのテストパターンをコンピュータに選択させるためのコンピュータ実行可能命令を有する1つ又は複数のコンピュータ読み取り可能な記憶媒体であって、
候補テストパターンのプールを識別するステップと、
一組のリソグラフィモデルパラメータを識別するステップと、
前記一組のリソグラフィモデルパラメータの最適値を求める際に最も効果的な一組のテストパターンを前記候補テストパターンのプールから自動的に選択する自動的選択ステップと、
を含み、
前記自動的選択ステップにおいては、前記候補テストパターンのプールにおける各テストパターンが、前記一組のリソグラフィモデルパラメータのうちの1つ又は複数の特定のリソグラフィモデルパラメータに対して敏感になるように、且つ、該特定のリソグラフィモデルパラメータの効果を明確に区別できるように、前記一組のテストパターンが選択され、
前記自動的選択ステップは、
前記候補テストパターンのプール及び前記一組のリソグラフィモデルパラメータに対応する感度行列を作成する感度行列作成ステップと、
前記感度行列を使用して計算を実行し、前記候補テストパターンのプールのうちのどのテストパターンが、前記一組のリソグラフィモデルパラメータに対する最大感度を有するかを判断する計算実行ステップと、
前記最大感度を有すると判断されたテストパターンを前記一組のテストパターンに追加する追加ステップと、
前記一組のリソグラフィモデルパラメータのすべてに対応する前記候補テストパターンのプールが前記一組のテストパターンに追加されるまで、前記計算実行ステップと前記追加ステップを繰り返す繰り返しステップと、
を含み、
前記計算実行ステップが、前記感度行列について主成分分析を実行することを含み、
前記感度行列作成ステップが、前記候補テストパターンのプールに対応するシミュレートされた空間像に基づいてウェーハ測定不確定性を推定するステップ、又は、前記候補テストパターンのプールを含むマスクに基づいて空間像をシミュレートするステップを含む、
方法を前記命令により前記コンピュータに実行させる、
コンピュータ読み取り可能な記憶媒体。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11300408P | 2008-11-10 | 2008-11-10 | |
US61/113,004 | 2008-11-10 | ||
US14081208P | 2008-12-24 | 2008-12-24 | |
US61/140,812 | 2008-12-24 |
Publications (2)
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JP2010117716A JP2010117716A (ja) | 2010-05-27 |
JP5414455B2 true JP5414455B2 (ja) | 2014-02-12 |
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JP2009245323A Active JP5414455B2 (ja) | 2008-11-10 | 2009-10-26 | リソグラフィモデル較正のためのパターン選択 |
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Country | Link |
---|---|
US (5) | US8694928B2 (ja) |
JP (1) | JP5414455B2 (ja) |
CN (2) | CN101738871B (ja) |
NL (1) | NL2003702A (ja) |
WO (1) | WO2010054350A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019124768A (ja) * | 2018-01-12 | 2019-07-25 | Alitecs株式会社 | テストパターンの抽出方法及び抽出プログラム |
Families Citing this family (71)
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US8611637B2 (en) * | 2007-01-11 | 2013-12-17 | Kla-Tencor Corporation | Wafer plane detection of lithographically significant contamination photomask defects |
NL2003719A (en) | 2008-11-10 | 2010-05-11 | Brion Tech Inc | Delta tcc for fast sensitivity model computation. |
NL2003702A (en) | 2008-11-10 | 2010-05-11 | Brion Tech Inc | Pattern selection for lithographic model calibration. |
NL2005522A (en) * | 2009-10-28 | 2011-05-02 | Asml Netherlands Bv | Pattern selection for full-chip source and mask optimization. |
NL2007306A (en) | 2010-09-23 | 2012-03-26 | Asml Netherlands Bv | Source polarization optimization. |
NL2007577A (en) * | 2010-11-10 | 2012-05-14 | Asml Netherlands Bv | Optimization of source, mask and projection optics. |
NL2007579A (en) | 2010-11-10 | 2012-05-14 | Asml Netherlands Bv | Pattern-dependent proximity matching/tuning including light manipulation by projection optics. |
NL2007578A (en) | 2010-11-17 | 2012-05-22 | Asml Netherlands Bv | Pattern-independent and hybrid matching/tuning including light manipulation by projection optics. |
US8619236B2 (en) | 2010-11-24 | 2013-12-31 | International Business Machines Corporation | Determining lithographic set point using optical proximity correction verification simulation |
US9588439B1 (en) | 2010-12-21 | 2017-03-07 | Asml Netherlands B.V. | Information matrix creation and calibration test pattern selection based on computational lithography model parameters |
US8499260B2 (en) | 2011-01-26 | 2013-07-30 | International Business Machines Corporation | Optical proximity correction verification accounting for mask deviations |
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JP2019124768A (ja) * | 2018-01-12 | 2019-07-25 | Alitecs株式会社 | テストパターンの抽出方法及び抽出プログラム |
JP6996677B2 (ja) | 2018-01-12 | 2022-01-17 | Alitecs株式会社 | テストパターンの抽出方法及び抽出プログラム |
Also Published As
Publication number | Publication date |
---|---|
US10025885B2 (en) | 2018-07-17 |
CN101738871B (zh) | 2012-10-10 |
US8694928B2 (en) | 2014-04-08 |
JP2010117716A (ja) | 2010-05-27 |
NL2003702A (en) | 2010-05-11 |
CN101738871A (zh) | 2010-06-16 |
US20140208278A1 (en) | 2014-07-24 |
WO2010054350A1 (en) | 2010-05-14 |
US20180322224A1 (en) | 2018-11-08 |
US20110224956A1 (en) | 2011-09-15 |
US8930172B2 (en) | 2015-01-06 |
CN102209935A (zh) | 2011-10-05 |
CN102209935B (zh) | 2013-05-15 |
US20150186557A1 (en) | 2015-07-02 |
US10846442B2 (en) | 2020-11-24 |
US20100122225A1 (en) | 2010-05-13 |
US9672301B2 (en) | 2017-06-06 |
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