SG11201604739RA - Method and apparatus for design of a metrology target - Google Patents
Method and apparatus for design of a metrology targetInfo
- Publication number
- SG11201604739RA SG11201604739RA SG11201604739RA SG11201604739RA SG11201604739RA SG 11201604739R A SG11201604739R A SG 11201604739RA SG 11201604739R A SG11201604739R A SG 11201604739RA SG 11201604739R A SG11201604739R A SG 11201604739RA SG 11201604739R A SG11201604739R A SG 11201604739RA
- Authority
- SG
- Singapore
- Prior art keywords
- design
- metrology target
- metrology
- target
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361921907P | 2013-12-30 | 2013-12-30 | |
| PCT/EP2014/076543 WO2015101459A1 (en) | 2013-12-30 | 2014-12-04 | Method and apparatus for design of a metrology target |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201604739RA true SG11201604739RA (en) | 2016-07-28 |
Family
ID=52016067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201604739RA SG11201604739RA (en) | 2013-12-30 | 2014-12-04 | Method and apparatus for design of a metrology target |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10296692B2 (en) |
| JP (1) | JP6291581B2 (en) |
| KR (1) | KR101860042B1 (en) |
| CN (1) | CN105874389B (en) |
| SG (1) | SG11201604739RA (en) |
| TW (1) | TWI567507B (en) |
| WO (1) | WO2015101459A1 (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10354886B2 (en) * | 2013-02-22 | 2019-07-16 | Synopsys, Inc. | Hybrid evolutionary algorithm for triple-patterning |
| CN112530828A (en) | 2014-06-10 | 2021-03-19 | Asml荷兰有限公司 | Computer readable medium |
| KR102021450B1 (en) | 2014-09-22 | 2019-11-04 | 에이에스엠엘 네델란즈 비.브이. | Process window identifier |
| WO2016078861A1 (en) | 2014-11-17 | 2016-05-26 | Asml Netherlands B.V. | Process based metrology target design |
| US10216096B2 (en) | 2015-08-14 | 2019-02-26 | Kla-Tencor Corporation | Process-sensitive metrology systems and methods |
| WO2017032534A2 (en) * | 2015-08-27 | 2017-03-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP6738415B2 (en) * | 2015-10-09 | 2020-08-12 | エーエスエムエル ネザーランズ ビー．ブイ． | Method and apparatus for inspection and metrology |
| KR102166317B1 (en) | 2015-12-24 | 2020-10-16 | 에이에스엠엘 네델란즈 비.브이. | Control method of patterning process, device manufacturing method, control system for lithographic apparatus and lithographic apparatus |
| WO2017153130A1 (en) * | 2016-03-07 | 2017-09-14 | Asml Netherlands B.V. | Illumination system and metrology system |
| KR102153482B1 (en) * | 2016-04-15 | 2020-09-09 | 에이에스엠엘 네델란즈 비.브이. | How to control the operation of a lithographic apparatus |
| KR102221760B1 (en) | 2016-07-15 | 2021-03-04 | 에이에스엠엘 네델란즈 비.브이. | Apparatus and method for design of metrology target field |
| EP3358413A1 (en) * | 2017-02-02 | 2018-08-08 | ASML Netherlands B.V. | Metrology method, apparatus and computer program |
| TWI750155B (en) * | 2017-03-03 | 2021-12-21 | 聯華電子股份有限公司 | System for automatically generating design rule check (drc) and method thereof |
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| US5629772A (en) * | 1994-12-20 | 1997-05-13 | International Business Machines Corporation | Monitoring of minimum features on a substrate |
| US7541201B2 (en) * | 2000-08-30 | 2009-06-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
| US6965895B2 (en) * | 2001-07-16 | 2005-11-15 | Applied Materials, Inc. | Method and apparatus for analyzing manufacturing data |
| DE10143723B4 (en) | 2001-08-31 | 2006-09-28 | Infineon Technologies Ag | A method for optimizing a layout for a mask for use in semiconductor fabrication |
| US7804994B2 (en) * | 2002-02-15 | 2010-09-28 | Kla-Tencor Technologies Corporation | Overlay metrology and control method |
| AU2003211559A1 (en) | 2002-03-01 | 2003-09-16 | Nikon Corporation | Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method, exposure device, program, and device manufacturing method |
| US6721691B2 (en) | 2002-03-26 | 2004-04-13 | Timbre Technologies, Inc. | Metrology hardware specification using a hardware simulator |
| JP4080813B2 (en) * | 2002-08-09 | 2008-04-23 | 株式会社東芝 | Mark design system, mark design method, mark design program, and semiconductor device manufacturing method using the mark design method |
| US7020535B1 (en) * | 2003-11-06 | 2006-03-28 | Advanced Micro Devices, Inc. | Method and apparatus for providing excitation for a process controller |
| US7791727B2 (en) | 2004-08-16 | 2010-09-07 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
| DE102005063460B4 (en) | 2005-02-28 | 2008-07-24 | Advanced Micro Devices, Inc., Sunnyvale | Method for process control |
| US7704605B2 (en) | 2006-03-28 | 2010-04-27 | Eastman Chemical Company | Thermoplastic articles comprising cyclobutanediol having a decorative material embedded therein |
| CN101305320B (en) | 2005-09-09 | 2012-07-04 | Asml荷兰有限公司 | System and method for mask verification using an individual mask error model |
| US7925486B2 (en) * | 2006-03-14 | 2011-04-12 | Kla-Tencor Technologies Corp. | Computer-implemented methods, carrier media, and systems for creating a metrology target structure design for a reticle layout |
| US7415319B2 (en) | 2006-04-04 | 2008-08-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| CN100456142C (en) * | 2006-10-18 | 2009-01-28 | 上海微电子装备有限公司 | Alignment mark and its producing method |
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| US7873504B1 (en) * | 2007-05-07 | 2011-01-18 | Kla-Tencor Technologies Corp. | Computer-implemented methods, carrier media, and systems for creating a metrology target structure design for a reticle layout |
| JP2008306030A (en) * | 2007-06-08 | 2008-12-18 | Canon Inc | Mark designing device and position detecting device |
| NL1036734A1 (en) | 2008-04-09 | 2009-10-12 | Asml Netherlands Bv | A method of assessing a model, an inspection apparatus and a lithographic apparatus. |
| NL1036750A1 (en) | 2008-04-14 | 2009-10-15 | Brion Tech Inc | A Method Of Performing Mask-Writer Tuning and Optimization. |
| JP4843649B2 (en) * | 2008-08-07 | 2011-12-21 | 株式会社東芝 | Evaluation pattern creation method, evaluation pattern creation program, and pattern verification method |
| NL2003702A (en) | 2008-11-10 | 2010-05-11 | Brion Tech Inc | Pattern selection for lithographic model calibration. |
| US8214771B2 (en) * | 2009-01-08 | 2012-07-03 | Kla-Tencor Corporation | Scatterometry metrology target design optimization |
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| NL2008957A (en) | 2011-07-08 | 2013-01-09 | Asml Netherlands Bv | Methods and systems for pattern design with tailored response to wavefront aberration. |
| US8468471B2 (en) | 2011-09-23 | 2013-06-18 | Kla-Tencor Corp. | Process aware metrology |
| WO2013079270A1 (en) | 2011-11-30 | 2013-06-06 | Asml Netherlands B.V. | Inspection method and apparatus, and corresponding lithographic apparatus |
| US10354929B2 (en) | 2012-05-08 | 2019-07-16 | Kla-Tencor Corporation | Measurement recipe optimization based on spectral sensitivity and process variation |
| NL2010717A (en) | 2012-05-21 | 2013-11-25 | Asml Netherlands Bv | Determining a structural parameter and correcting an asymmetry property. |
| US8612898B1 (en) * | 2012-08-14 | 2013-12-17 | Globalfoundries Inc. | Identification of illegal devices using contact mapping |
| KR102094652B1 (en) | 2013-03-04 | 2020-03-30 | 케이엘에이 코포레이션 | Metrology target identification, design and verification |
| US9857291B2 (en) * | 2013-05-16 | 2018-01-02 | Kla-Tencor Corporation | Metrology system calibration refinement |
| US10895810B2 (en) * | 2013-11-15 | 2021-01-19 | Kla Corporation | Automatic selection of sample values for optical metrology |
-
2014
- 2014-12-04 WO PCT/EP2014/076543 patent/WO2015101459A1/en active Application Filing
- 2014-12-04 SG SG11201604739RA patent/SG11201604739RA/en unknown
- 2014-12-04 KR KR1020167021018A patent/KR101860042B1/en active IP Right Grant
- 2014-12-04 JP JP2016539330A patent/JP6291581B2/en active Active
- 2014-12-04 CN CN201480071612.8A patent/CN105874389B/en active Active
- 2014-12-15 TW TW103143720A patent/TWI567507B/en active
- 2014-12-19 US US14/577,901 patent/US10296692B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015101459A1 (en) | 2015-07-09 |
| KR101860042B1 (en) | 2018-05-21 |
| TW201531812A (en) | 2015-08-16 |
| CN105874389A (en) | 2016-08-17 |
| US20150186582A1 (en) | 2015-07-02 |
| US10296692B2 (en) | 2019-05-21 |
| CN105874389B (en) | 2018-06-26 |
| TWI567507B (en) | 2017-01-21 |
| KR20160103133A (en) | 2016-08-31 |
| JP6291581B2 (en) | 2018-03-14 |
| JP2017502339A (en) | 2017-01-19 |
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