JP5413386B2 - 液体噴射ヘッド、及びこれを備えた記録装置 - Google Patents
液体噴射ヘッド、及びこれを備えた記録装置 Download PDFInfo
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- JP5413386B2 JP5413386B2 JP2011046022A JP2011046022A JP5413386B2 JP 5413386 B2 JP5413386 B2 JP 5413386B2 JP 2011046022 A JP2011046022 A JP 2011046022A JP 2011046022 A JP2011046022 A JP 2011046022A JP 5413386 B2 JP5413386 B2 JP 5413386B2
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- 239000007788 liquid Substances 0.000 title claims description 8
- 239000000203 mixture Substances 0.000 claims description 33
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 239000010410 layer Substances 0.000 description 243
- 239000000758 substrate Substances 0.000 description 69
- 239000011734 sodium Substances 0.000 description 37
- 239000000463 material Substances 0.000 description 35
- 239000000243 solution Substances 0.000 description 27
- 238000010897 surface acoustic wave method Methods 0.000 description 25
- 239000013078 crystal Substances 0.000 description 24
- 239000010409 thin film Substances 0.000 description 24
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 21
- 239000002243 precursor Substances 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- 239000012071 phase Substances 0.000 description 13
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 13
- 229910052700 potassium Inorganic materials 0.000 description 12
- 229910052708 sodium Inorganic materials 0.000 description 12
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 11
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 11
- 239000010955 niobium Substances 0.000 description 11
- 239000011591 potassium Substances 0.000 description 11
- 229910052697 platinum Inorganic materials 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 238000004151 rapid thermal annealing Methods 0.000 description 8
- 150000002902 organometallic compounds Chemical class 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 229910002367 SrTiO Inorganic materials 0.000 description 6
- 230000008878 coupling Effects 0.000 description 6
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- 238000010438 heat treatment Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000011247 coating layer Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
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- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 4
- ZTILUDNICMILKJ-UHFFFAOYSA-N niobium(v) ethoxide Chemical compound CCO[Nb](OCC)(OCC)(OCC)OCC ZTILUDNICMILKJ-UHFFFAOYSA-N 0.000 description 4
- RPDAUEIUDPHABB-UHFFFAOYSA-N potassium ethoxide Chemical compound [K+].CC[O-] RPDAUEIUDPHABB-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 3
- 150000004703 alkoxides Chemical class 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
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- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- QDRKDTQENPPHOJ-UHFFFAOYSA-N sodium ethoxide Chemical compound [Na+].CC[O-] QDRKDTQENPPHOJ-UHFFFAOYSA-N 0.000 description 3
- 239000003381 stabilizer Substances 0.000 description 3
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
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- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910000457 iridium oxide Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
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- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 238000000018 DNA microarray Methods 0.000 description 1
- 241000877463 Lanio Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- DOARWPHSJVUWFT-UHFFFAOYSA-N lanthanum nickel Chemical compound [Ni].[La] DOARWPHSJVUWFT-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- -1 organic acid salts Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Formation Of Insulating Films (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011046022A JP5413386B2 (ja) | 2005-12-06 | 2011-03-03 | 液体噴射ヘッド、及びこれを備えた記録装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005351955 | 2005-12-06 | ||
| JP2005351955 | 2005-12-06 | ||
| JP2011046022A JP5413386B2 (ja) | 2005-12-06 | 2011-03-03 | 液体噴射ヘッド、及びこれを備えた記録装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006113494A Division JP4735840B2 (ja) | 2005-12-06 | 2006-04-17 | 圧電体積層体、表面弾性波素子、薄膜圧電共振子および圧電アクチュエータ |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013187080A Division JP5716799B2 (ja) | 2005-12-06 | 2013-09-10 | 圧電体積層体、表面弾性波素子、薄膜圧電共振子および圧電アクチュエータ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011155272A JP2011155272A (ja) | 2011-08-11 |
| JP5413386B2 true JP5413386B2 (ja) | 2014-02-12 |
Family
ID=38130991
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011046022A Active JP5413386B2 (ja) | 2005-12-06 | 2011-03-03 | 液体噴射ヘッド、及びこれを備えた記録装置 |
| JP2013187080A Active JP5716799B2 (ja) | 2005-12-06 | 2013-09-10 | 圧電体積層体、表面弾性波素子、薄膜圧電共振子および圧電アクチュエータ |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013187080A Active JP5716799B2 (ja) | 2005-12-06 | 2013-09-10 | 圧電体積層体、表面弾性波素子、薄膜圧電共振子および圧電アクチュエータ |
Country Status (2)
| Country | Link |
|---|---|
| JP (2) | JP5413386B2 (zh) |
| CN (1) | CN100539228C (zh) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5391395B2 (ja) * | 2007-10-15 | 2014-01-15 | 日立金属株式会社 | 圧電薄膜付き基板及び圧電素子 |
| JP5515675B2 (ja) * | 2009-11-20 | 2014-06-11 | 日立金属株式会社 | 圧電薄膜素子及び圧電薄膜デバイス |
| JP5071503B2 (ja) * | 2010-03-25 | 2012-11-14 | 日立電線株式会社 | 圧電薄膜素子及び圧電薄膜デバイス |
| JP5056914B2 (ja) * | 2010-07-07 | 2012-10-24 | 日立電線株式会社 | 圧電薄膜素子および圧電薄膜デバイス |
| US9252685B2 (en) | 2011-10-20 | 2016-02-02 | Canon Kabushiki Kaisha | Dust removing device and imaging device |
| JP2015070203A (ja) * | 2013-09-30 | 2015-04-13 | ダイハツ工業株式会社 | 発電材料、発電素子および発電システム |
| EP3075536B1 (en) * | 2013-11-28 | 2019-04-03 | Kyocera Corporation | Piezoelectric element, and piezoelectric member, liquid discharge head, and recording device using piezoelectric element |
| WO2016121204A1 (ja) * | 2015-01-26 | 2016-08-04 | 株式会社ユーテック | 加圧式ランプアニール装置、強誘電体膜及びその製造方法 |
| JP6610856B2 (ja) * | 2015-03-20 | 2019-11-27 | セイコーエプソン株式会社 | 圧電素子及び圧電素子応用デバイス並びに圧電素子の製造方法 |
| US10355196B2 (en) | 2016-02-10 | 2019-07-16 | Seiko Epson Corporation | Piezoelectric element, piezoelectric element application device, and method of manufacturing piezoelectric element |
| JP7240083B2 (ja) | 2017-03-21 | 2023-03-15 | Ｋｙｂ株式会社 | サーボ弁制御装置 |
| JP6922326B2 (ja) | 2017-03-28 | 2021-08-18 | セイコーエプソン株式会社 | 圧電素子及び圧電素子応用デバイス |
| US20210234527A1 (en) * | 2017-09-22 | 2021-07-29 | Anhui Anuki Technologies Co., Ltd. | Manufacturing Method for Piezoelectric Resonator and Piezoelectric Resonator |
| JP6724266B2 (ja) | 2018-03-01 | 2020-07-15 | Ｊｘ金属株式会社 | ニオブ酸カリウムナトリウムスパッタリングターゲット及びその製造方法 |
| JP7196503B2 (ja) | 2018-09-27 | 2022-12-27 | セイコーエプソン株式会社 | 圧電素子およびその製造方法、液体吐出ヘッド、ならびにプリンター |
| JP7331424B2 (ja) | 2019-04-10 | 2023-08-23 | セイコーエプソン株式会社 | 圧電素子、液体吐出ヘッド、およびプリンター |
| JP6756886B1 (ja) | 2019-04-26 | 2020-09-16 | Ｊｘ金属株式会社 | ニオブ酸カリウムナトリウムスパッタリングターゲット |
| JP7423978B2 (ja) | 2019-10-28 | 2024-01-30 | セイコーエプソン株式会社 | 圧電素子、液体吐出ヘッド、およびプリンター |
| FR3135868A1 (fr) * | 2022-05-18 | 2023-11-24 | Soitec | Dispositif a ondes acoustiques de surface integrant une couche mince de materiau metallique |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2976246A (en) * | 1961-03-21 | composition | ||
| GB1355418A (en) * | 1971-05-24 | 1974-06-05 | Mullard Ltd | Acoustic surface wave devices |
| JP4186300B2 (ja) * | 1999-03-24 | 2008-11-26 | ヤマハ株式会社 | 弾性表面波素子 |
| JP4212289B2 (ja) * | 2002-04-04 | 2009-01-21 | Ｔｄｋ株式会社 | 圧電磁器の製造方法 |
| JP2004066600A (ja) * | 2002-08-05 | 2004-03-04 | Seiko Epson Corp | 液体噴射ヘッド及び液体噴射装置 |
| JP4480967B2 (ja) * | 2003-01-23 | 2010-06-16 | 株式会社デンソー | 圧電磁器組成物，圧電素子，及び誘電素子 |
| US7009328B2 (en) * | 2003-06-20 | 2006-03-07 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive device made of piezoelectric/electrostrictive film and manufacturing method |
| JP4450636B2 (ja) * | 2004-02-12 | 2010-04-14 | 株式会社豊田中央研究所 | 圧電セラミックスの製造方法 |
| JP4795748B2 (ja) * | 2004-09-13 | 2011-10-19 | 株式会社デンソー | 圧電アクチュエータ |
-
2006
- 2006-12-06 CN CNB2006101606936A patent/CN100539228C/zh active Active
-
2011
- 2011-03-03 JP JP2011046022A patent/JP5413386B2/ja active Active
-
2013
- 2013-09-10 JP JP2013187080A patent/JP5716799B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN100539228C (zh) | 2009-09-09 |
| JP5716799B2 (ja) | 2015-05-13 |
| CN1979908A (zh) | 2007-06-13 |
| JP2014033210A (ja) | 2014-02-20 |
| JP2011155272A (ja) | 2011-08-11 |
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